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Nanoscale imaging of He-ion irradiation effects on amorphous TaO$_x$ toward electroforming-free neuromorphic functions
Authors:
Olha Popova,
Steven J. Randolph,
Sabine M. Neumayer,
Liangbo Liang,
Benjamin Lawrie,
Olga S. Ovchinnikova,
Robert J. Bondi,
Matthew J. Marinella,
Bobby G. Sumpter,
Petro Maksymovych
Abstract:
Resistive switching in thin films has been widely studied in a broad range of materials. Yet the mechanisms behind electroresistive switching have been persistently difficult to decipher and control, in part due to their non-equilibrium nature. Here, we demonstrate new experimental approaches that can probe resistive switching phenomena, utilizing amorphous TaO$_x$ as a model material system. Spec…
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Resistive switching in thin films has been widely studied in a broad range of materials. Yet the mechanisms behind electroresistive switching have been persistently difficult to decipher and control, in part due to their non-equilibrium nature. Here, we demonstrate new experimental approaches that can probe resistive switching phenomena, utilizing amorphous TaO$_x$ as a model material system. Specifically, we apply Scanning Microwave Impedance Microscopy (sMIM) and cathodoluminescence (CL) microscopy as direct probes of conductance and electronic structure, respectively. These methods provide direct evidence of the electronic state of TaO$_x$ despite its amorphous nature. For example CL identifies characteristic impurity levels in TaO$_x$, in agreement with first principles calculations. We applied these methods to investigate He-ion-beam irradiation as a path to activate conductivity of materials and enable electroforming-free control over resistive switching. However, we find that even though He-ions begin to modify the nature of bonds even at the lowest doses, the films conductive properties exhibit remarkable stability with large displacement damage and they are driven to metallic states only at the limit of structural decomposition. Finally, we show that electroforming in a nanoscale junction can be carried out with a dissipated power of < 20 nW, a much smaller value compared to earlier studies and one that minimizes irreversible structural modifications of the films. The multimodal approach described here provides a new framework toward the theory/experiment guided design and optimization of electroresistive materials.
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Submitted 20 July, 2023;
originally announced July 2023.
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Polarization-controlled volatile ferroelectric and capacitive switching in Sn$_2$P$_2$S$_6$
Authors:
Sabine M. Neumayer,
Anton V. Ievlev,
Alexander Tselev,
Sergey A. Basun,
Benjamin S. Conner,
Michael A. Susner,
Petro Maksymovych
Abstract:
Smart electronic circuits that support neuromorphic computing on the hardware level necessitate materials with memristive, memcapacitive, and neuromorphic-like functional properties; in short, the electronic response must depend on the voltage history, thus enabling learning algorithms. Here we demonstrate volatile ferroelectric switching of Sn$_2$P$_2$S$_6$ at room temperature and see that initia…
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Smart electronic circuits that support neuromorphic computing on the hardware level necessitate materials with memristive, memcapacitive, and neuromorphic-like functional properties; in short, the electronic response must depend on the voltage history, thus enabling learning algorithms. Here we demonstrate volatile ferroelectric switching of Sn$_2$P$_2$S$_6$ at room temperature and see that initial polarization orientation strongly determines the properties of polarization switching. In particular, polarization switching hysteresis is strongly imprinted by the original polarization state, shifting the regions of non-linearity toward zero-bias. As a corollary, polarization switching also enables effective capacitive switching, approaching the sought-after regime of memcapacitance. Landau-Ginzburg-Devonshire simulations demonstrate that one mechanism by which polarization can control the shape of the hysteresis loop is the existence of charged domain walls decorating the periphery of the repolarization nucleus. These walls oppose the growth of the switched domain and favor back-switching, thus creating a scenario of controlled volatile ferroelectric switching. Although the measurements were carried out with single crystals, prospectively volatile polarization switching can be tuned by tailoring sample thickness, domain wall mobility and electric fields, paving way to non-linear dielectric properties for smart electronic circuits.
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Submitted 26 August, 2022;
originally announced August 2022.
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Piezoresponse phase as variable in electromechanical characterization
Authors:
Sabine M. Neumayer,
Sahar Saremi,
Lane W. Martin,
Liam Collins,
Alexander Tselev,
Stephen Jesse,
Sergei V. Kalinin,
Nina Balke
Abstract:
Piezoresponse force microscopy (PFM) is a powerful characterization technique to readily image and manipulate ferroelectrics domains. PFM gives insight into the strength of local piezoelectric coupling as well as polarization direction through PFM amplitude and phase, respectively. Converting measured arbitrary units to physical material parameters, however, remains a challenge. While much effort…
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Piezoresponse force microscopy (PFM) is a powerful characterization technique to readily image and manipulate ferroelectrics domains. PFM gives insight into the strength of local piezoelectric coupling as well as polarization direction through PFM amplitude and phase, respectively. Converting measured arbitrary units to physical material parameters, however, remains a challenge. While much effort has been spent on quantifying the PFM amplitude signal, little attention has been given to the PFM phase and it is often arbitrarily adjusted to fit expectations or processed as recorded. This is problematic when investigating materials with unknown or potentially negative sign of the probed effective electrostrictive coefficient or strong frequency dispersion of electromechanical responses since assumptions about the phase cannot be reliably made. The PFM phase can, however, provide important information on the polarization orientation and the sign of the electrostrictive coefficient. Most notably, the orientation of the PFM hysteresis loop is determined by the PFM phase. Moreover, when presenting PFM data as a combined signal, the resulting response can be artificially lowered or asymmetric if the phase data has not been correctly processed. Here, we demonstrate a path to identify the phase offset required to extract correct meaning from PFM phase data. We explore different sources of phase offsets including the experimental setup, instrumental contributions, and data analysis. We discuss the physical working principles of PFM and develop a strategy to extract physical meaning from the PFM phase. The proposed procedures are verified on two materials with positive and negative piezoelectric coefficients.
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Submitted 6 December, 2019;
originally announced December 2019.
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Room Temperature Electrocaloric Effect in Layered Ferroelectric CuInP2S6 for Solid State Refrigeration
Authors:
Mengwei Si,
Atanu K. Saha,
Pai-Ying Liao,
Shengjie Gao,
Sabine M. Neumayer,
Jie Jian,
Jingkai Qin,
Nina Balke,
Haiyan Wang,
Petro Maksymovych,
Wenzhuo Wu,
Sumeet K. Gupta,
Peide D. Ye
Abstract:
A material with reversible temperature change capability under an external electric field, known as the electrocaloric effect (ECE), has long been considered as a promising solid-state cooling solution. However, electrocaloric (EC) performance of EC materials generally is not sufficiently high for real cooling applications. As a result, exploring EC materials with high performance is of great inte…
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A material with reversible temperature change capability under an external electric field, known as the electrocaloric effect (ECE), has long been considered as a promising solid-state cooling solution. However, electrocaloric (EC) performance of EC materials generally is not sufficiently high for real cooling applications. As a result, exploring EC materials with high performance is of great interest and importance. Here, we report on the ECE of ferroelectric materials with van der Waals layered structure (CuInP2S6 or CIPS in this work in particular). Over 60% polarization charge change is observed within a temperature change of only 10 K at Curie temperature. Large adiabatic temperature change (|ΔT|) of 3.3 K, isothermal entropy change (|ΔS|) of 5.8 J kg-1 K-1 at |ΔE|=142.0 kV cm-1 at 315 K (above and near room temperature) are achieved, with a large EC strength (|ΔT|/|ΔE|) of 29.5 mK cm kV-1. The ECE of CIPS is also investigated theoretically by numerical simulation and a further EC performance projection is provided.
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Submitted 13 September, 2019; v1 submitted 19 January, 2019;
originally announced January 2019.
