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Change in Magnetic Order in NiPS3 Single Crystals Induced by a Molecular Intercalation
Authors:
Nirman Chakraborty,
Adi Harchol,
Azhar Abu-Hariri,
Rajesh Kumar Yadav,
Muhamed Dawod,
Diksha Prabhu Gaonkar,
Kusha Sharma,
Anna Eyal,
Yaron Amouyal,
Doron Naveh,
Efrat Lifshitz
Abstract:
Intercalation is a robust method for tuning the physical properties of a vast number of van der Waals (vdW) materials. However, the prospects of using intercalation to modify magnetism in vdWs systems and the associated mechanisms have not been investigated adequately. In this work, we modulate magnetic order in an XY antiferromagnet NiPS3 single crystals by introducing pyridine molecules into the…
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Intercalation is a robust method for tuning the physical properties of a vast number of van der Waals (vdW) materials. However, the prospects of using intercalation to modify magnetism in vdWs systems and the associated mechanisms have not been investigated adequately. In this work, we modulate magnetic order in an XY antiferromagnet NiPS3 single crystals by introducing pyridine molecules into the vdWs gap under different thermal conditions. X-ray diffraction measurements indicated pronounced changes in the lattice parameter beta, while magnetization measurements at in-plane and out-of-plane configurations exposed reversal trends in the crystals Neel temperatures through intercalation-de-intercalation processes. The changes in magnetic ordering were also supported by three-dimensional thermal diffusivity experiments. The preferred orientation of the pyridine dipoles within vdW gaps was deciphered via polarized Raman spectroscopy. The results highlight the relation between the preferential alignment of the intercalants, thermal transport, and crystallographic disorder along with the modulation of anisotropy in the magnetic order. The theoretical concept of double-exchange interaction in NiPS3 was employed to explain the intercalation-induced magnetic ordering. The study uncovers the merit of intercalation as a foundation for spin switches and spin transistors in advanced quantum devices.
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Submitted 15 October, 2024;
originally announced October 2024.
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Nonlinear Self-Calibrated Spectrometer with Single GeSe-InSe Heterojunction Device
Authors:
Rana Darweesh,
Rajesh Kumar Yadav,
Elior Adler,
Michal Poplinger,
Adi Levi,
Jea-Jung Lee,
Amir Leshem,
Ashwin Ramasubramaniam,
Fengnian Xia,
Doron Naveh
Abstract:
Optical spectroscopy the measurement of electromagnetic spectra is fundamental to various scientific domains and serves as the building block of numerous technologies. Computational spectrometry is an emerging field that employs an array of photodetectors with different spectral responses or a single photodetector device with tunable spectral response, in conjunction with numerical algorithms, for…
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Optical spectroscopy the measurement of electromagnetic spectra is fundamental to various scientific domains and serves as the building block of numerous technologies. Computational spectrometry is an emerging field that employs an array of photodetectors with different spectral responses or a single photodetector device with tunable spectral response, in conjunction with numerical algorithms, for spectroscopic measurements. Compact single photodetectors made from layered materials are particularly attractive, since they eliminate the need for bulky mechanical and optical components used in traditional spectrometers and can easily be engineered as heterostructures to optimize device performance. However, compact tunable photodetectors are typically nonlinear devices and this adds complexity to extracting optical spectra from the device response. Here, we report on the training of an artificial neural network (ANN) to recover the full nonlinear spectral photoresponse of a nonlinear problem of high dimensionality of a single GeSe-InSe p-n heterojunction device. We demonstrate the functionality of a calibrated spectrometer in the spectral range of 400-1100 nm, with a small device footprint of ~25X25 micrometers, and we achieve a mean reconstruction error of 0.0002 for the power-spectrum at a spectral resolution of 0.35 nm. Using our device, we demonstrate a solution to metamerism, an apparent matching of colors with different power spectral distributions, which is a fundamental problem in optical imaging.
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Submitted 21 November, 2023;
originally announced November 2023.
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High-Index Topological Insulator Resonant Nanostructures from Bismuth Selenide
Authors:
Sukanta Nandi,
Shany Z. Cohen,
Danveer Singh,
Michal Poplinger,
Pilkhaz Nanikashvili,
Doron Naveh,
Tomer Lewi
Abstract:
Topological insulators (TIs) are a class of materials characterized by an insulting bulk and high mobility topologically protected surface states, making them promising candidates for future optoelectronic and quantum devices. Although their electronic and transport properties have been extensively studied, their optical properties and prospective photonic capabilities have not been fully uncovere…
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Topological insulators (TIs) are a class of materials characterized by an insulting bulk and high mobility topologically protected surface states, making them promising candidates for future optoelectronic and quantum devices. Although their electronic and transport properties have been extensively studied, their optical properties and prospective photonic capabilities have not been fully uncovered. Here, we use a combination of far-field and near-field nanoscale imaging and spectroscopy, to study CVD grown Bi2Se3 nanobeams (NBs). We first extract the mid-infrared (MIR) optical constants of Bi2Se3, revealing refractive index values as high as n ~6.4, and demonstrate that the NBs support Mie-resonances across the MIR. Local near-field reflection phase mapping reveals domains of various phase shifts, providing information on the local optical properties of the NBs. We experimentally measure up to 2π phase-shift across the resonance, in excellent agreement with FDTD simulations. This work highlights the potential of TI Bi2Se3 for quantum circuitry, non-linear generation, high-Q metaphotonics, and IR photodetection.
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Submitted 18 August, 2023;
originally announced August 2023.
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Amorphous Selenium Mie Resonators for Infrared Meta-Optics
Authors:
Danveer Singh,
Michal Poplinger,
Avraham Twitto,
Rafi Snitkoff,
Pilkhaz Nanikashvili,
Ori Azolay,
Adi Levi,
Chen Stern,
Gili Cohen Taguri,
Asaf Albo,
Doron Naveh,
Tomer Lewi
Abstract:
Applying direct growth and deposition of optical surfaces holds great promise for the advancement of future nanophotonic technologies. Here, we report on a chemical vapor deposition (CVD) technique for depositing amorphous selenium (a-Se) spheres by desorption of selenium from Bi2Se3 and re-adsorption on the substrate. We utilize this process to grow scalable, large area Se spheres on several subs…
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Applying direct growth and deposition of optical surfaces holds great promise for the advancement of future nanophotonic technologies. Here, we report on a chemical vapor deposition (CVD) technique for depositing amorphous selenium (a-Se) spheres by desorption of selenium from Bi2Se3 and re-adsorption on the substrate. We utilize this process to grow scalable, large area Se spheres on several substrates and characterize their Mie-resonant response in the mid-infrared (MIR) spectral range. We demonstrate size-tunable Mie resonances spanning the 2-16 um spectral range, for single isolated resonators and large area ensembles, respectively. We further demonstrate strong absorption dips of up to 90% in ensembles of particles in a broad MIR range. Finally, we show that ultra-high-Q resonances arise in the case where Se Mie-resonators are coupled to low-loss epsilon-near-zero (ENZ) substrates. These findings demonstrate the enabling potential of amorphous Selenium as a versatile and tunable nanophotonic material that may open up avenues for on-chip MIR spectroscopy, chemical sensing, spectral imaging and large area metasurface fabrication.
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Submitted 30 December, 2021;
originally announced December 2021.
