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Turbulence modeling over riblets via domain transformation
Authors:
Mohammadamin Naseri,
Armin Zare
Abstract:
Numerical and experimental studies have demonstrated the drag-reducing potential of carefully designed streamwise-elongated riblets in lowering skin-friction drag. To support the systematic design of such surface corrugations, recent efforts have integrated simplified versions of the governing equations with innovative methods for representing the effects of rough boundaries on flow dynamics. Nota…
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Numerical and experimental studies have demonstrated the drag-reducing potential of carefully designed streamwise-elongated riblets in lowering skin-friction drag. To support the systematic design of such surface corrugations, recent efforts have integrated simplified versions of the governing equations with innovative methods for representing the effects of rough boundaries on flow dynamics. Notably, the statistical response of the eddy-viscosity-enhanced linearized Navier-Stokes equations has been shown to effectively capture the ability of riblets in suppressing turbulence, quantify the influence of background turbulence on the mean velocity, and reproduce established drag-reduction trends. In this paper, we enhance the flexibility and computational efficiency of this simulation-free approach by implementing a domain transformation for surface representation, along with a perturbation analysis on a small geometric parameter of the riblets. While domain transformation complicates the differential equations, it provides accurate boundary representations and facilitates the analysis of complex riblet shapes at high Reynolds numbers by enabling perturbation analysis to simplify the dimensional complexity of the governing equations. Our method successfully predicts drag reduction trends for triangular and scalloped riblets, consistent with existing literature. We further utilize our framework to investigate flow mechanisms influenced by riblets and extend our study to channel flows with friction Reynolds numbers up to 2003. Our findings reveal the emergence of K-H rollers over large and sharp scalloped riblets, contributing to the degradation of drag reduction in these geometries. Additionally, we examine the impact of riblets on near-wall flow structures, focusing on their suppression of streamwise-elongated structures in flows over large riblets.
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Submitted 6 June, 2025; v1 submitted 7 January, 2025;
originally announced January 2025.
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Exploring Quantum Active Learning for Materials Design and Discovery
Authors:
Maicon Pierre Lourenço,
Hadi Zadeh-Haghighi,
Jiří Hostaš,
Mosayeb Naseri,
Daya Gaur,
Christoph Simon,
Dennis R. Salahub
Abstract:
The meeting of artificial intelligence (AI) and quantum computing is already a reality; quantum machine learning (QML) promises the design of better regression models. In this work, we extend our previous studies of materials discovery using classical active learning (AL), which showed remarkable economy of data, to explore the use of quantum algorithms within the AL framework (QAL) as implemented…
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The meeting of artificial intelligence (AI) and quantum computing is already a reality; quantum machine learning (QML) promises the design of better regression models. In this work, we extend our previous studies of materials discovery using classical active learning (AL), which showed remarkable economy of data, to explore the use of quantum algorithms within the AL framework (QAL) as implemented in the MLChem4D and QMLMaterials codes. The proposed QAL uses quantum support vector regressor (QSVR) or a quantum Gaussian process regressor (QGPR) with various quantum kernels and different feature maps. Data sets include perovskite properties (piezoelectric coefficient, band gap, energy storage) and the structure optimization of a doped nanoparticle (3Al@Si11) chosen to compare with classical AL results. Our results revealed that the QAL method improved the searches in most cases, but not all, seemingly correlated with the roughness of the data. QAL has the potential of finding optimum solutions, within chemical space, in materials science and elsewhere in chemistry.
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Submitted 26 July, 2024;
originally announced July 2024.
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Response to "Comment on 'A novel two-dimensional boron-carbon-nitride (BCN) monolayer: A first-principles insight [J. Appl. Phys. 2021, 130, 114301]'"
Authors:
Asadollah Bafekry,
Mosayeb Naseri,
Mohamed M. Fadlallah,
Ismaeil Abdolhosseini Sarsari,
Mehrdad faraji,
Abbas bagheri khatibani,
Mitra Ghergherehchi,
Daniela Gogova
Abstract:
Recently, reported a comments on the our paper [JAP21-AR-03574R].. For clarification, we applied the fingerprint theory to examine the similarity between the distinct structures. The fingerprint function is a crystal structure descriptor, an 1D-function related to the pair correlation function and diffraction patterns. It does not depend on absolute atomic coordinates, but only on interatomic dist…
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Recently, reported a comments on the our paper [JAP21-AR-03574R].. For clarification, we applied the fingerprint theory to examine the similarity between the distinct structures. The fingerprint function is a crystal structure descriptor, an 1D-function related to the pair correlation function and diffraction patterns. It does not depend on absolute atomic coordinates, but only on interatomic distances. Small deviations in atomic positions will influence the fingerprints only slightly [1-3]. Fingerprint theory allows quantification of the degree of order and complexity of a crystal structure.
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Submitted 14 August, 2023; v1 submitted 7 May, 2022;
originally announced May 2022.
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Trapping in irradiated p-on-n silicon sensors at fluences anticipated at the HL-LHC outer tracker
Authors:
W. Adam,
T. Bergauer,
M. Dragicevic,
M. Friedl,
R. Fruehwirth,
M. Hoch,
J. Hrubec,
M. Krammer,
W. Treberspurg,
W. Waltenberger,
S. Alderweireldt,
W. Beaumont,
X. Janssen,
S. Luyckx,
P. Van Mechelen,
N. Van Remortel,
A. Van Spilbeeck,
P. Barria,
C. Caillol,
B. Clerbaux,
G. De Lentdecker,
D. Dobur,
L. Favart,
A. Grebenyuk,
Th. Lenzi
, et al. (663 additional authors not shown)
Abstract:
The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 $μ$m thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to $3 \cdot 10^{15}$ neq/cm$^2$. Pulsed red laser light with a wavelength of 672 nm is used to generate electron-hole pairs in the sensors. The induced signals are used to determi…
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The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 $μ$m thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to $3 \cdot 10^{15}$ neq/cm$^2$. Pulsed red laser light with a wavelength of 672 nm is used to generate electron-hole pairs in the sensors. The induced signals are used to determine the charge collection efficiencies separately for electrons and holes drifting through the sensor. The effective trapping rates are extracted by comparing the results to simulation. The electric field is simulated using Synopsys device simulation assuming two effective defects. The generation and drift of charge carriers are simulated in an independent simulation based on PixelAV. The effective trapping rates are determined from the measured charge collection efficiencies and the simulated and measured time-resolved current pulses are compared. The effective trapping rates determined for both electrons and holes are about 50% smaller than those obtained using standard extrapolations of studies at low fluences and suggests an improved tracker performance over initial expectations.
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Submitted 7 May, 2015;
originally announced May 2015.
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Design, fabrication and characterization of the first AC-coupled silicon microstrip sensors in India
Authors:
T. Aziz,
S. R. Chendvankar,
G. B. Mohanty,
M. R. Patil,
K. K. Rao,
Y. R. Rani,
Y. P. P. Rao,
H. Behnamian,
S. Mersi,
M. Naseri
Abstract:
This paper reports the design, fabrication and characterization of single-sided silicon microstrip sensors with integrated biasing resistors and coupling capacitors, produced for the first time in India. We have first developed a prototype sensor on a four-inch wafer. After finding suitable test procedures for characterizing these AC coupled sensors, we have fine-tuned various process parameters i…
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This paper reports the design, fabrication and characterization of single-sided silicon microstrip sensors with integrated biasing resistors and coupling capacitors, produced for the first time in India. We have first developed a prototype sensor on a four-inch wafer. After finding suitable test procedures for characterizing these AC coupled sensors, we have fine-tuned various process parameters in order to produce sensors with the desired specifications.
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Submitted 8 May, 2014; v1 submitted 11 February, 2014;
originally announced February 2014.
