Substrate-induced spin-torque-like signal in spin-torque ferromagnetic resonance measurement
Authors:
Dingsong Jiang,
Hetian Chen,
Guiping Ji,
Yahong Chai,
Chenye Zhang,
Yuhan Liang,
Jingchun Liu,
Witold Skowroński,
Pu Yu,
Di Yi,
Tianxiang Nan
Abstract:
Oxide thin films and interfaces with strong spin-orbit coupling have recently shown exceptionally high charge-to-spin conversion, making them potential spin-source materials for spintronics. Epitaxial strain engineering using oxide substrates with different lattice constants and symmetries has emerged as a mean to further enhance charge-to-spin conversion. However, high relative permittivity and d…
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Oxide thin films and interfaces with strong spin-orbit coupling have recently shown exceptionally high charge-to-spin conversion, making them potential spin-source materials for spintronics. Epitaxial strain engineering using oxide substrates with different lattice constants and symmetries has emerged as a mean to further enhance charge-to-spin conversion. However, high relative permittivity and dielectric loss of commonly used oxide substrates, such as SrTiO3, can cause significant current shunting in substrates at high frequency, which may strongly affect spin-torque measurement and potentially result in an inaccurate estimation of charge-to-spin conversion efficiency. In this study, we systematically evaluate the influence of various oxide substrates for the widely-used spin-torque ferromagnetic resonance (ST-FMR) measurement. Surprisingly, we observed substantial spin-torque signals in samples comprising only ferromagnetic metal on oxide substrates with high relative permittivity (e.g., SrTiO3 and KTaO3), where negligible signal should be initially expected. Notably, this unexpected signal shows a strong correlation with the capacitive reactance of oxide substrates and the leakage radio frequency (RF) current within the substrate. By revising the conventional ST-FMR analysis model, we attribute this phenomenon to a 90-degree phase difference between the RF current flowing in the metal layer and in the substrate. We suggest that extra attention should be paid during the ST-FMR measurements, as this artifact could dominate over the real spin-orbit torque signal from high-resistivity spin-source materials grown on substrate with high relative permittivity.
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Submitted 20 August, 2024;
originally announced August 2024.
Multiferroic Magnon Spin-Torque Based Reconfigurable Logic-In-Memory
Authors:
Yahong Chai,
Yuhan Liang,
Cancheng Xiao,
Yue Wang,
Bo Li,
Dingsong Jiang,
Pratap Pal,
Yongjian Tang,
Hetian Chen,
Yuejie Zhang,
Witold Skowroński,
Qinghua Zhang,
Lin Gu,
Jing Ma,
Pu Yu,
Jianshi Tang,
Yuan-Hua Lin,
Di Yi,
Daniel C. Ralph,
Chang-Beom Eom,
Huaqiang Wu,
Tianxiang Nan
Abstract:
Magnons, bosonic quasiparticles carrying angular momentum, can flow through insulators for information transmission with minimal power dissipation. However, it remains challenging to develop a magnon-based logic due to the lack of efficient electrical manipulation of magnon transport. Here we present a magnon logic-in-memory device in a spin-source/multiferroic/ferromagnet structure, where multife…
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Magnons, bosonic quasiparticles carrying angular momentum, can flow through insulators for information transmission with minimal power dissipation. However, it remains challenging to develop a magnon-based logic due to the lack of efficient electrical manipulation of magnon transport. Here we present a magnon logic-in-memory device in a spin-source/multiferroic/ferromagnet structure, where multiferroic magnon modes can be electrically excited and controlled. In this device, magnon information is encoded to ferromagnetic bits by the magnon-mediated spin torque. We show that the ferroelectric polarization can electrically modulate the magnon spin-torque by controlling the non-collinear antiferromagnetic structure in multiferroic bismuth ferrite thin films with coupled antiferromagnetic and ferroelectric orders. By manipulating the two coupled non-volatile state variables (ferroelectric polarization and magnetization), we further demonstrate reconfigurable logic-in-memory operations in a single device. Our findings highlight the potential of multiferroics for controlling magnon information transport and offer a pathway towards room-temperature voltage-controlled, low-power, scalable magnonics for in-memory computing.
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Submitted 25 September, 2023;
originally announced September 2023.
