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Unraveling the Origin of Mysterious Luminescence peak at 3.45 eV in GaN Nanowires
Authors:
Swagata Bhunia,
Soumyadip Chatterjee,
Ritam Sarkar,
Dhiman Nag,
Suddhasatta Mahapatra,
Apurba Laha
Abstract:
The demand for GaN Nanowires (NWs)-based optoelectronic devices has rapidly increased over the past few years due to its superior crystalline quality compare to their planar counterparts. However, NWs-based devices face significant challenges because of number of surface states, basal plane stacking faults and coalescence related defect states. While the origins of most of the defect states have b…
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The demand for GaN Nanowires (NWs)-based optoelectronic devices has rapidly increased over the past few years due to its superior crystalline quality compare to their planar counterparts. However, NWs-based devices face significant challenges because of number of surface states, basal plane stacking faults and coalescence related defect states. While the origins of most of the defect states have been identified and mitigated using well-established methods, the origins of few defect states remain unknown, and thus their suppression methods have yet to be explored. One such defect state is the 3.45 eV luminescence peak, known as the UX-band. In this report, we have investigated the origin of this peak in NWs grown on a sapphire substrate by using Plasma Assisted Molecular Beam Epitaxy (PAMBE) tool. We have found that the defect states, generated due to oxygen incorporation, especially when the oxygen atoms substitute the Ga atoms, are the primary cause of this band. Actually the excitons are localized at this defect center and the radiative recombination of localized excitons gives the characteristic UX-band. By protecting the NWs from oxygen incorporation through AlN encapsulation process, we have completely suppressed the 3.45 eV peak and proved further that the peak is caused by oxygen induced defect states. Thus we have addressed an issue that persisted over the last three decades, potentially paving the way for efficiency improvements in optoelectronic devices.
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Submitted 30 October, 2024;
originally announced October 2024.
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Ultrafast Green Single Photon Emission from an InGaN Quantum Dot-in-a-GaN Nanowire at Room Temperature
Authors:
Swagata Bhunia,
Ayan Majumder,
Soumyadip Chatterjee,
Ritam Sarkar,
Dhiman Nag,
Kasturi Saha,
Suddhasatta Mahapatra,
Apurba Laha
Abstract:
In recent years, there has been a growing demand for room-temperature visible single-photon emission from InGaN nanowire-quantum-dots (NWQDs) due to its potential in developing quantum computing, sensing, and communication technologies. Despite various approaches explored for growing InGaN quantum dots on top of nanowires (NWs), achieving the emission of a single photon at room temperature with se…
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In recent years, there has been a growing demand for room-temperature visible single-photon emission from InGaN nanowire-quantum-dots (NWQDs) due to its potential in developing quantum computing, sensing, and communication technologies. Despite various approaches explored for growing InGaN quantum dots on top of nanowires (NWs), achieving the emission of a single photon at room temperature with sensible efficiency remains a challenge. This challenge is primarily attributed to difficulties in accomplishing the radial confinement limit and the inherent giant built-in potential of the NWQD. In this report, we have employed a novel Plasma Assisted Molecular Beam Epitaxy (PAMBE) growth approach to reduce the diameter of the QD to the excitonic Bohr radius of InGaN, thereby achieving strong lateral confinement. Additionally, we have successfully suppressed the strong built-in potential by reducing the QD diameter. Toward the end of the report, we have demonstrated single-photon emission ($λ$ = 561 nm) at room-temperature from the NWQD and measured the second-order correlation function $g^{2}(0)$ as 0.11, which is notably low compared to other reported findings. Furthermore, the lifetime of carriers in the QD is determined to be 775 ps, inferring a high operational speed of the devices.
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Submitted 24 November, 2023;
originally announced November 2023.
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Optimization of Balanced Detector for Coherent Receiver on Generic InP Platform by PSO
Authors:
Dhiman Nag,
Weiming Yao,
Jos J. G. M. van der Tol
Abstract:
Balanced photodetector (BPD) is an important component for high-speed coherent receiver. Optimization strategy of waveguide-based multi-quantum well (MQW) BPDs, operating at 1550 nm is demonstrated on generic InP platform. Design parameters of BPD are optimized towards achieving the highest bandwidth for a responsivity through an algorithm based on Particle Swarm Optimization (PSO). We do so by es…
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Balanced photodetector (BPD) is an important component for high-speed coherent receiver. Optimization strategy of waveguide-based multi-quantum well (MQW) BPDs, operating at 1550 nm is demonstrated on generic InP platform. Design parameters of BPD are optimized towards achieving the highest bandwidth for a responsivity through an algorithm based on Particle Swarm Optimization (PSO). We do so by establishing an equivalent circuit model of BPD and analyzing its opto-electronic transfer function through numerical modelling. We address the major bottlenecks of high-speed BPDs: transit time of generated carriers and RC loading in our model. The algorithm is able to provide multiple combinations of design parameters with the same output characteristics. Design methodology to integrate laser with optimized BPD is presented to successfully implement coherent receiver.
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Submitted 19 September, 2023;
originally announced September 2023.
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Scaling nanowire-supported GaN quantum dots to the sub-10-nm limit, yielding complete suppression of the giant built-in potential
Authors:
Swagata Bhunia,
Ritam Sarkar,
Dhiman Nag,
Dipankar Jana,
Suddhasatta Mahapatra,
Apurba Laha
Abstract:
The nanowire-supported quantum dot (NWQD) of GaN is an unconventional nanostructure, which is extremely promising for realization of UV photonics in general, and room-temperature single photon generation, in particular. While GaN-NWQDs have several promising attributes, the crucial challenge in exploiting their full potential, is to reduce the lateral dimensions of the QDs, to the order of the exc…
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The nanowire-supported quantum dot (NWQD) of GaN is an unconventional nanostructure, which is extremely promising for realization of UV photonics in general, and room-temperature single photon generation, in particular. While GaN-NWQDs have several promising attributes, the crucial challenge in exploiting their full potential, is to reduce the lateral dimensions of the QDs, to the order of the exciton Bohr-radius in GaN. Also critical is to suppress the built-in electric field due to spontaneous and piezoelectric polarization, which adversely affects the radiative recombination lifetime. We report here the innovation of a simple yet powerful single-step epitaxial growth technique, to achieve both of these targets. By combining controlled and on-demand thermal decomposition of GaN nanowires, with our previously-developed strategy of inhibiting the same via AlN-capping, we demonstrate that the NWQD-diameter can indeed be reduced to the truly strong-quantum-confinement limit. In these ultra-scaled GaN QDs, we show that the built-in electric fields are almost completely suppressed. The NWQD fabrication-strategy developed in this work may pave the way for fabrication of highly efficient classical and quantum UV-emitters based on GaN.
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Submitted 18 August, 2022;
originally announced August 2022.
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Building of a 4-channel TTL scaler for counting detector signals
Authors:
S. Sahu,
R. P. Adak,
S. Biswas,
T. Mishra,
D. Nag,
R. N. Patra,
S. Rudra,
P. K. Sahu,
S. Swain
Abstract:
A scaler has been fabricated to count the signals from any radiation de- tector. It can count signals of frequency up to 140 kHz. Transistor Transistor Logic (TTL) is used in this scaler. In this article the details of the design, fabrication and operation processes of the scaler is presented.
A scaler has been fabricated to count the signals from any radiation de- tector. It can count signals of frequency up to 140 kHz. Transistor Transistor Logic (TTL) is used in this scaler. In this article the details of the design, fabrication and operation processes of the scaler is presented.
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Submitted 30 July, 2016;
originally announced August 2016.
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Long-term stability test of a triple GEM detector
Authors:
R. P. Adak,
S. Biswas,
S. Das,
D. Ghosal,
S. K. Ghosh,
A. Mondal,
D. Nag,
T. K. Nayak,
R. N. Patra,
S. K Prasad,
S. Raha,
P. K. Sahu,
S. Sahu,
S. Swain
Abstract:
The main aim of the study is to perform the long-term stability test of gain of the single mask triple GEM detector. A simple method is used for this long- term stability test using a radioactive X-ray source with high activity. The test is continued till accumulation of charge per unit area > 12.0 mC/mm2. The details of the chamber fabrication, the test set-up, the method of measurement and the t…
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The main aim of the study is to perform the long-term stability test of gain of the single mask triple GEM detector. A simple method is used for this long- term stability test using a radioactive X-ray source with high activity. The test is continued till accumulation of charge per unit area > 12.0 mC/mm2. The details of the chamber fabrication, the test set-up, the method of measurement and the test results are presented in this paper.
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Submitted 30 July, 2016;
originally announced August 2016.
