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High quality Al$_{0.37}$In$_{0.63}$N layers grown at low temperature (<300$^\circ$C) by radio-frequency sputtering
Authors:
A Núñez-Cascajero,
R. Blasco,
S Valdueza-Felip,
D. Montero,
J. Olea,
F. B. Naranjo
Abstract:
High-quality Al0.37In0.63N layers have been grown by reactive radio-frequency (RF) sputtering on sapphire, glass and Si (111) at low substrate temperature (from room temperature to 300°C). Their structural, chemical and optical properties are investigated as a function of the growth temperature and type of substrate. X-ray diffraction measurements reveal that all samples have a wurtzite crystallog…
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High-quality Al0.37In0.63N layers have been grown by reactive radio-frequency (RF) sputtering on sapphire, glass and Si (111) at low substrate temperature (from room temperature to 300°C). Their structural, chemical and optical properties are investigated as a function of the growth temperature and type of substrate. X-ray diffraction measurements reveal that all samples have a wurtzite crystallographic structure oriented with the c-axis perpendicular to the substrate surface, without parasitic orientations. The layers preserve their Al content at 37 % for the whole range of studied growth temperature. The samples grown at low temperatures (RT and 100°C) are almost fully relaxed, showing a closely-packed columnar-like morphology with an RMS surface roughness below 3 nm. The optical band gap energy estimated for layers grown at RT and 100°C on sapphire and glass substrates is of ~2.4 eV while it red shifts to ~2.03 eV at 300°C. The feasibility of growing high crystalline quality AlInN at low growth temperature even on amorphous substrates open new application fields for this material like surface plasmon resonance sensors developed directly on optical fibers and other applications where temperature is a handicap and the material cannot be heated.
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Submitted 26 September, 2019;
originally announced September 2019.
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Effect of different buffer layers on the quality of InGaN layers grown on Si
Authors:
V. J. Gómez,
J. Grandal,
A. Núñez-Cascajero,
F. B. Naranjo,
M. Varela,
M. A. Sánchez-García,
E. Calleja
Abstract:
This work studies the effect of four different types of buffer layers on the structural and optical properties of InGaN layers grown on Si(111) substrates and their correlation with electrical characteristics. The vertical electrical conduction of n-InGaN/buffer-layer/p-Si heterostructures, with In composition near 46%, which theoretically produces an alignment of the bands, is analyzed. Droplet e…
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This work studies the effect of four different types of buffer layers on the structural and optical properties of InGaN layers grown on Si(111) substrates and their correlation with electrical characteristics. The vertical electrical conduction of n-InGaN/buffer-layer/p-Si heterostructures, with In composition near 46%, which theoretically produces an alignment of the bands, is analyzed. Droplet elimination by radical-beam irradiation was successfully applied to grow high quality InGaN films on Si substrates for the first time. Among several buffer choices, an AlN buffer layer with a thickness above 24 nm improves the structural and optical quality of the InGaN epilayer while keeping a top to bottom ohmic behavior. These results will allow fabricating double-junction InGaN/Si solar cells without the need of tunnel junctions between the two sub-cells, therefore simplifying the device design.
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Submitted 29 August, 2019;
originally announced August 2019.
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Influence of the AlN interlayer thickness on the photovoltaic properties of In-rich AlInN on Si heterojunctions deposited by RF sputtering
Authors:
S. Valdueza-Felip,
A. Núñez-Cascajero,
R. Blasco,
D. Montero,
L. Grenet,
M. de la Mata,
S. Fernández,
L. Rodríguez-De Marcos,
S. I. Molina,
J. Olea,
F. B. Naranjo
Abstract:
We report the influence of the AlN interlayer thickness (0-15 nm) on the photovoltaic properties of Al0.37In0.63N on Si heterojunction solar cells deposited by radio frequency sputtering. The poor junction band alignment and the presence of a 2-3 nm thick amorphous layer at the interface mitigates the response in devices fabricated by direct deposition of n-AlInN on p-Si(111). Adding a 4-nm-thick…
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We report the influence of the AlN interlayer thickness (0-15 nm) on the photovoltaic properties of Al0.37In0.63N on Si heterojunction solar cells deposited by radio frequency sputtering. The poor junction band alignment and the presence of a 2-3 nm thick amorphous layer at the interface mitigates the response in devices fabricated by direct deposition of n-AlInN on p-Si(111). Adding a 4-nm-thick AlN buffer layer improves the AlInN crystalline quality and the interface alignment leading to devices with a conversion efficiency of 1.5% under 1-sun AM1.5G illumination. For thicker buffers the performance lessens due to inefficient tunnel transport through the AlN. These results demonstrate the feasibility of using In-rich AlInN alloys deposited by radio frequency sputtering as novel electron-selective contacts to Si-heterojunction solar cells.
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Submitted 3 August, 2018;
originally announced August 2018.
