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Coarse-graining bistability with the Martini force field
Authors:
Alexander D. Muratov,
Vladik A. Avetisov
Abstract:
An increasing interest in molecular structures whose long term dynamics resemble those of bistable mechanical systems promotes the search of possible candidates that may operate as two-state switching units. Of particular interest are the systems that are capable to exhibit such bistable effects as spontaneous vibrations, stochastic resonance and spontaneous synchronization. Previously, in all-ato…
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An increasing interest in molecular structures whose long term dynamics resemble those of bistable mechanical systems promotes the search of possible candidates that may operate as two-state switching units. Of particular interest are the systems that are capable to exhibit such bistable effects as spontaneous vibrations, stochastic resonance and spontaneous synchronization. Previously, in all-atom molecular dynamics simulations it has been demonstrated that short pyridine-furan springs show these bistable phenomena. In this article we introduce a coarse-grained model of such springs and investigate the possibility to observe the bistability effects, such as spontaneous vibrations. Our findings allow the studies of short pyridine-furan springs at large time and length scales and open field for further computational research of large bistable systems.
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Submitted 17 December, 2024; v1 submitted 19 July, 2024;
originally announced July 2024.
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Improvement of the perovskite photodiodes performance via advanced interface engineering with polymer dielectric
Authors:
A. P. Morozov,
L. O. Luchnikov,
S. Yu. Yurchuk,
A. R. Ishteev,
P. A. Gostishchev,
S. I. Didenko,
N. S. Saratovsky,
S. S. Kozlov,
D. S. Muratov,
Yu. N. Luponosov,
D. S. Saranin
Abstract:
Halide perovskite-based photodiodes are promising for efficient detection across a broad spectral range. Perovskite absorber thin-films have a microcrystalline morphology, characterized by a high density of surface states and defects at inter-grain interfaces. In this work, we used dielectric-ferroelectric poly(vinylidene-fluoride-trifluoroethylene-P(VDF-TrFE) to modify the bulk interfaces and ele…
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Halide perovskite-based photodiodes are promising for efficient detection across a broad spectral range. Perovskite absorber thin-films have a microcrystalline morphology, characterized by a high density of surface states and defects at inter-grain interfaces. In this work, we used dielectric-ferroelectric poly(vinylidene-fluoride-trifluoroethylene-P(VDF-TrFE) to modify the bulk interfaces and electron transport junction in p-i-n perovskite photodiodes. Our complex work demonstrates that interface engineering with P(VDF-TrFE) induces significant Fermi level pinning, reducing from 4.85 eV for intrinsic perovskite to 4.28 eV for the configuration with dielectric interlayers. The integration of P(VDF-TrFE) into the perovskite film did not affect the morphology and crystal structure, but significantly changed the charge transport and device performance. IV curve analysis and 2-diode model calculations showed enhanced shunt properties, a decreased non-ideality factor, and reduced saturation dark current. We have shown that the complex introduction of P(VDF-TrFE) into the absorbers bulk and on its surface is essential to reduce the impact of the trapping processes. For P(VDF-TrFE) containing devices, we increased the specific detectivity from 10^11 to 10^12 Jones, expanded the linear dynamic range up to 100 dB, and reduced the equivalent noise power to 10^-13 W*Hz^-0.5. Reducing non-radiative recombination contributions significantly enhanced device performance, improving rise/fall times from 6.3/10.9 us to 4.6/6.5 us. The cut-off frequency (3dB) increased from 64.8 kHz to 74.8 kHz following the introduction of the dielectric. These results provide new insights into the use of organic dielectrics and an improved understanding of trap-states and ion defect compensation for detectors based on perovskite heterostructures.
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Submitted 3 July, 2024;
originally announced July 2024.
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Tailoring wetting properties of organic hole-transport interlayers for slot-die coated perovskite solar modules
Authors:
T. S. Le,
I. A. Chuykoa,
L. O. Luchnikova,
K. A. Ilicheva,
P. O. Sukhorukova,
D. O. Balakirev,
N. S. Saratovsky,
A. O. Alekseev,
S. S. Kozlov,
D. S. Muratov,
V. V. Voronov,
P. A. Gostishchev,
D. A. Kiselev,
T. S. Ilina,
A. A. Vasilev,
A. Y. Polyakov,
E. A. Svidchenko,
O. A. Maloshitskaya,
Yu. N. Luponosov,
D. S. Saranin
Abstract:
The use of self-assembled monolayers (SAMs) with anchoring groups was considered as an effective approach for interface engineering in perovskite solar cells with metal oxide charge transporting layers. However, the coating of SAM layers in PSMs by means of a slot-die is a challenging process due to the low viscosity of the solutions and the low wettability of the films. In this study, we integrat…
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The use of self-assembled monolayers (SAMs) with anchoring groups was considered as an effective approach for interface engineering in perovskite solar cells with metal oxide charge transporting layers. However, the coating of SAM layers in PSMs by means of a slot-die is a challenging process due to the low viscosity of the solutions and the low wettability of the films. In this study, we integrate a triphenylamine-based polymer, pTPA-TDP, blended with SAM based on 5-[4-[4-(diphenylamino) phenyl] thiophene-2-carboxylic acid (TPATC), to address the challenges of uniform slot-die coating and interface passivation in large-area modules. We fabricated p-i-n oriented PSMs on 50x50 mm2 substrates (12-sub-cells) with NiO hole transport layer (HTL) and organic interlayers for surface modification. Wetting angle mapping demonstrated that ununiform regions of the slot-die coated SAM have hydrophobicity with contact angle values up to 90°, causing fluctuations in absorber thickness and the presence of macro-defects at buried interfaces. The incorporation of the blended interlayer to NiO/perovskite junction homogenized the surface wettability (contact angle=40°) and mitigated lattice strain in the absorber. This enabled the effective use of SAM properties on a large-area surface, improving energy level alignment and enhancing the power conversion efficiency (PCE) of the modules from 13.98% to 15.83% and stability (ISOS-L-2, T80 period) from 500-1000 hours to 1630 hours. Investigation of PSMs upon cooling till -5 °C showed that the PCE increased by +0.19%/°C for samples with NiO HTL, while using SAM and blended interlayers raised the coefficient to ~0.40%/°C due to changes in activation energy and trap contributions to device performance across a wide temperature range.
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Submitted 12 June, 2024;
originally announced June 2024.
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Stabilization of lead-free bulk CsSnI$_3$ perovskite thermoelectrics via incorporating of TiS$_3$ nanoribbon clusters
Authors:
Alexandra Ivanova,
Lev Luchnikov,
Margarita Golikova,
Dmitry S. Muratov,
Danila Saranin,
Aleksandra Khanina,
Pavel Gostishchev,
Vladimir Khovaylo
Abstract:
The intense research for efficient low-temperature thermoelectric materials motivates the exploration of innovative compounds and composite systems. This study examines the effects of integrating low-dimensional titanium trisulfide (TiS$_3$) into bulk tin-based halide perovskites (CsSnI$_3$) for use in thermoelectric applications. The addition of small amounts of two-dimensional titanium trisulfid…
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The intense research for efficient low-temperature thermoelectric materials motivates the exploration of innovative compounds and composite systems. This study examines the effects of integrating low-dimensional titanium trisulfide (TiS$_3$) into bulk tin-based halide perovskites (CsSnI$_3$) for use in thermoelectric applications. The addition of small amounts of two-dimensional titanium trisulfide (TiS$_3$) to bulk tin-based halide perovskites (CsSnI$_3$) significantly enhanced the structural stability of the composite material and suppressed oxidation processes. The CsSnI$_3$-TiS$_3$ composites demonstrated stabilization of temperature-dependent electrical properties (conductivity and Seebeck coefficient). This study provides valuable insights into the promising approach of using low-dimensional TiS3 as an additive to stabilize the thermoelectric performance of CsSnI$_3$.
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Submitted 14 May, 2024;
originally announced May 2024.
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Ion-beam sputtering of NiO hole transporting layers for p-i-n halide perovskite solar cells
Authors:
P. Gostishchev,
L. O. Luchnikov,
O. Bronnikov,
V. Kurichenko,
D. S. Muratov,
A. A. Aleksandrov,
A. R. Tameev,
M. P. Tyukhova,
S. Le Badurin. I. V.,
Ryabtseva M. V.,
D. Saranin,
A. Di Carlo
Abstract:
Ion-beam sputtering offers significant benefits in terms of deposition uniformity and pinhole-free thin-films without limiting the scalability of the process. In this work, the reactive ion-beam sputtering of nickel oxide has been developed for the hole transporting layer of a p-i-n perovskite solar cells (PCSs). The process is carried out by oxidation of the scattered Ni particles with additional…
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Ion-beam sputtering offers significant benefits in terms of deposition uniformity and pinhole-free thin-films without limiting the scalability of the process. In this work, the reactive ion-beam sputtering of nickel oxide has been developed for the hole transporting layer of a p-i-n perovskite solar cells (PCSs). The process is carried out by oxidation of the scattered Ni particles with additional post-treatment annealing regimes. Using deposition rate of 1.2 nm/min allowed growth of very uniform NiO coating with the roughness below 0.5 nm on polished Si wafer (15x15 cm2). We performed a complex investigation of structural, optical, surface and electrical properties of the NiO thin-films. The post-treatment annealing (150-300C) was considered as an essential process for improvement of the optical transparency, decrease of defects concentration and gain of the charge carrier mobility. As result, the annealed ion-beam sputtered NiO films delivered a power conversion efficiency (PCE) up to 20.14%, while device without post-treatment reached the value of 11.84%. The improvement of the output performance originated from an increase of the short-circuit current density (Jsc), open circuit voltage (Voc), shunt and contact properties in the devices. We also demonstrate that the ion-beam sputtering of NiO can be successfully implemented for the fabrication of large area modules (54.5 cm2) and PSCs on a flexible plastic substrate (125 microns).
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Submitted 29 June, 2023;
originally announced June 2023.
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Ionically gated perovskite solar cell with tunable carbon nanotube interface at thick fullerene electron transporting layer: comparison to gated OPV
Authors:
D. S. Saranin,
D. S. Muratov,
R. Haroldson,
A. G. Nasibulin,
A. R. Ishteev,
D. V. Kuznetsov,
M. N. Orlova,
S. I. Didenko,
A. A. Zakhidov
Abstract:
We demonstrate an ionically gated planar PS-PV solar cell with ultra-thick fullerene ETL with a porous CNT electron collector on top of it. Perovskite photovoltaic devices usually have undoped electron transport layers, usually thin like C60 due to its high resistance. Metallic low work function cathodes are extremely unstable in PS-PV due to reaction with halogens I-/Br-, and it would be desirabl…
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We demonstrate an ionically gated planar PS-PV solar cell with ultra-thick fullerene ETL with a porous CNT electron collector on top of it. Perovskite photovoltaic devices usually have undoped electron transport layers, usually thin like C60 due to its high resistance. Metallic low work function cathodes are extremely unstable in PS-PV due to reaction with halogens I-/Br-, and it would be desirable to have stable carbon cathodes on top of thick low resistance ETL for enhancing the stability of PS-PVs. We show that gating such top CNT cathode in ionic liquid, as part of a supercapacitor charged by Vg tunes the Fermi level of CNT by EDL charging, and causes lowering of a barrier at of C60/C70 ETL. Moreover, at higher gating voltage ions further propagates into fullerene by electrochemical n-doping, which increases dramatically PV performance by raising mostly two parameters: Isc and FF, resulting in PCE efficiency raised from 3 % to 11 %. N-doping of ETL strongly enhances charge collection by ETL and CNT raising Isc and lowering series resistance and thus increasing strongly PCE. Surprisingly Voc is not sensitive in PS-PV to external Vg gating, on the contrary, to strongly enhanced Voc in ionically gated organic PV, where it is the main gating effect. This insensitivity of Voc to lowering of the work function of Vg gated CNT electrode is a clear indication that Voc in PS-PV is determined by inner p-i-n junction formation in PS itself, via accumulation of its intrinsic mobile ionic species halogens and cations and their vacancies.
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Submitted 6 November, 2019;
originally announced November 2019.
