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Enhanced Strain Transfer and Optoelectronic Performance in MoS2 Devices via Formvar Encapsulation
Authors:
Simeon N. Vladimirov,
Onur Cakiroglu,
Carmen Munuera,
Andres Castellanos-Gomez,
Thiago L. Vasconcelos
Abstract:
We systematically investigate the influence of polyvinyl formal (PVFM), commonly known as Formvar, in comparison to polycarbonate (PC) and polymethyl methacrylate (PMMA), as encapsulation materials on the strain performance of MoS2 monolayer and bilayer flakes on flexible polypropylene (PP) substrates. Notably, optical differential reflectance measurements reveal that PVFM and PMMA encapsulation s…
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We systematically investigate the influence of polyvinyl formal (PVFM), commonly known as Formvar, in comparison to polycarbonate (PC) and polymethyl methacrylate (PMMA), as encapsulation materials on the strain performance of MoS2 monolayer and bilayer flakes on flexible polypropylene (PP) substrates. Notably, optical differential reflectance measurements reveal that PVFM and PMMA encapsulation significantly enhances the mechanical and thermal strain gauge factors by approximately 2-fold (up to ~-50 meV/%) and 6-fold (up to ~-1.5 meV/°C), respectively, while PC shows a slightly lower enhancement. Moreover, all three polymers increase the maximum achievable strain from approximately 1.4% to 2.3%. Furthermore, devices fabricated on PP substrates exhibit improved optoelectronic performance when encapsulated with PVFM, including increased and faster photocurrent response and extended device lifetime.
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Submitted 9 June, 2025;
originally announced June 2025.
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Natural layered phlogopite dielectric for ultrathin two-dimensional optoelectronics
Authors:
Thomas Pucher,
Julia Hernandez-Ruiz,
Guillermo Tajuelo-Castilla,
José Ángel Martín-Gago,
Carmen Munuera,
Andres Castellanos-Gomez
Abstract:
The integration of high-dielectric-constant (high-$κ$) materials with two-dimensional (2D) semiconductors is promising to overcome performance limitations and reach their full theoretical potential. Here we show that naturally occurring phlogopite mica, exfoliated into ultrathin flakes, can serve as a robust high-$κ$ dielectric layer for transition metal dichalcogenide-based 2D electronics and opt…
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The integration of high-dielectric-constant (high-$κ$) materials with two-dimensional (2D) semiconductors is promising to overcome performance limitations and reach their full theoretical potential. Here we show that naturally occurring phlogopite mica, exfoliated into ultrathin flakes, can serve as a robust high-$κ$ dielectric layer for transition metal dichalcogenide-based 2D electronics and optoelectronics. Phlogopite's wide bandgap (~4.8 eV), high dielectric constant (~11), and large breakdown field (10 MVcm$^{-1}$) enable transistors with subthreshold swings down to 100 mVdec$^{-1}$, minimal hysteresis (30-60 mV) and interface trap densities comparable to state-of-the-art oxide dielectrics. Moreover, phototransistors built upon monolayer molybdenum disulfide (MoS$_2$) and phlogopite exhibit responsivities up to 3.3x10$^{4}$ AW$^{-1}$ and detectivities near 10$^{10}$ Jones, surpassing devices based on conventional gate insulators. We further demonstrate the versatility of this natural dielectric by integrating phlogopite/MoS$_2$ heterostructures into NMOS inverters, showcasing robust voltage gains and low-voltage operation. Our findings establish phlogopite as a promising, earth-abundant dielectric for next-generation 2D transistor technologies and high-performance photodetection.
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Submitted 14 May, 2025;
originally announced May 2025.
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In-plane anisotropic optical and mechanical properties of two-dimensional MoO$_3$
Authors:
Sergio Puebla,
Roberto D'Agosta,
Gabriel Sanchez-Santolino,
Riccardo Frisenda,
Carmen Munuera,
Andres Castellanos-Gomez
Abstract:
Molybdenum trioxide (MoO$_3$) in-plane anisotropy has increasingly attracted the attention of the scientific community in the last few years. Many of the observed in-plane anisotropic properties stem from the anisotropic refractive index and elastic constants of the material but a comprehensive analysis of these fundamental properties is still lacking. Here we employ Raman and micro-reflectance me…
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Molybdenum trioxide (MoO$_3$) in-plane anisotropy has increasingly attracted the attention of the scientific community in the last few years. Many of the observed in-plane anisotropic properties stem from the anisotropic refractive index and elastic constants of the material but a comprehensive analysis of these fundamental properties is still lacking. Here we employ Raman and micro-reflectance measurements, using polarized light, to determine the angular dependence of the refractive index of thin MoO$_3$ flakes and we study the directional dependence of the MoO$_3$ Young's modulus using the buckling metrology method. We found that MoO$_3$ displays one of the largest in-plane anisotropic mechanical properties reported for 2D materials so far.
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Submitted 7 May, 2021;
originally announced May 2021.
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Integrating van der Waals materials on paper substrates for electrical and optical applications
Authors:
Wenliang Zhang,
Qinghua Zhao,
Carmen Munuera,
Martin Lee,
Eduardo Flores,
João E. F. Rodrigues,
Jose R. Ares,
Carlos Sanchez,
Javier Gainza,
Herre S. J. van der Zant,
José A. Alonso,
Isabel J. Ferrer,
Tao Wang,
Riccardo Frisenda,
Andres Castellanos-Gomez
Abstract:
Paper holds the promise to replace silicon substrates in applications like internet of things or disposable electronics that require ultra-low-cost electronic components and an environmentally friendly electronic waste management. In the last years, spurred by the abovementioned properties of paper as a substrate and the exceptional electronic, mechanical and optical properties of van der Waals (v…
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Paper holds the promise to replace silicon substrates in applications like internet of things or disposable electronics that require ultra-low-cost electronic components and an environmentally friendly electronic waste management. In the last years, spurred by the abovementioned properties of paper as a substrate and the exceptional electronic, mechanical and optical properties of van der Waals (vdW) materials, many research groups have worked towards the integration of vdW materials-based devices on paper. Recently, a method to deposit a continuous film of densely packed interconnects of vdW materials on paper by simply rubbing the vdW crystals against the rough surface of paper has been presented. This method utilizes the weak interlayer vdW interactions and allows cleaving of the crystals into micro platelets through the abrasion against the paper. Here, we aim to illustrate the general character and the potential of this technique by fabricating films of 39 different vdW materials (including superconductors, semi-metals, semiconductors, and insulators) on standard copier paper. We have thoroughly characterized their optical properties showing their high optical quality: one can easily resolve the absorption band edge of semiconducting vdW materials and even the excitonic features present in some vdW materials with high exciton binding energy. We also measured the electrical resistivity for several vdW materials films on paper finding exceptionally low values, which are in some cases, orders of magnitude lower than those reported for analogous films produced by inkjet printing. We finally demonstrate the fabrication of field-effect devices with vdW materials on paper using the paper substrate as an ionic gate.
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Submitted 7 May, 2021;
originally announced May 2021.
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Optical-based thickness measurement of MoO$_3$ nanosheets
Authors:
Sergio Puebla,
Antonio Mariscal-Jiménez,
Rosalía Serna Galán,
Carmen Munuera,
Andres Castellanos-Gomez
Abstract:
Considering that two-dimensional (2D) molybdenum trioxide has acquired more attention in the last few years, it is relevant to speed up thickness identification of this material. We provide two fast and non-destructive methods to evaluate the thickness of MoO$_3$ flakes on SiO$_2$/Si substrates. First, by means of quantitative analysis of the apparent color of the flakes in optical microscopy imag…
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Considering that two-dimensional (2D) molybdenum trioxide has acquired more attention in the last few years, it is relevant to speed up thickness identification of this material. We provide two fast and non-destructive methods to evaluate the thickness of MoO$_3$ flakes on SiO$_2$/Si substrates. First, by means of quantitative analysis of the apparent color of the flakes in optical microscopy images, one can make a first approximation of the thickness with an uncertainty of $\pm3$ nm. The second method is based on the fit of optical contrast spectra, acquired with micro-reflectance measurements, to a Fresnel law-based model that provides an accurate measurement of the flake thickness with $\pm2$ nm of uncertainty.
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Submitted 22 September, 2020;
originally announced September 2020.
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Tailored Graphenic Structures Directly Grown on Titanium Oxide Boost the Interfacial Charge Transfer
Authors:
Roberto Munoz,
Carlos Sanchez-Sanchez,
Pablo Merino,
Elena Lopez-Elvira,
Carmen Munuera,
Patricia Gant,
Maria F. Lopez,
Andres Castellanos-Gomez,
Jose Angel Martin-Gago,
Mar Garcia-Hernandez
Abstract:
The successful application of titanium oxide-graphene hybrids in the fields of photocatalysis, photovoltaics and photodetection strongly depends on the interfacial contact between both materials. The need to provide a good coupling between the enabling conductor and the photoactive phase prompted us to directly grow conducting graphenic structures on TiO2 crystals. We here report on the direct syn…
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The successful application of titanium oxide-graphene hybrids in the fields of photocatalysis, photovoltaics and photodetection strongly depends on the interfacial contact between both materials. The need to provide a good coupling between the enabling conductor and the photoactive phase prompted us to directly grow conducting graphenic structures on TiO2 crystals. We here report on the direct synthesis of tailored graphenic structures by using Plasma Assisted Chemical Vapour Deposition that present a clean junction with the prototypical titanium oxide (110) surface. Chemical analysis of the interface indicates chemical bonding between both materials. Photocurrent measurements under UV light illumination manifest that the charge transfer across the interface is efficient. Moreover, the influence of the synthesis atmosphere, gas precursor (C2H2) and diluents (Ar, O2), on the interface and on the structure of the as-grown graphenic material is assessed. The inclusion of O2 promotes vertical growth of partially oxidized carbon nanodots/rods with controllable height and density. The deposition with Ar results in continuous graphenic films with low resistivity (6.8x10-6 ohm x m). The synthesis protocols developed here are suitable to produce tailored carbon-semiconductor structures on a variety of practical substrates as thin films, pillars or nanoparticles.
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Submitted 28 October, 2019;
originally announced October 2019.
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Optical contrast and refractive index of natural van der Waals heterostructure nanosheets of franckeite
Authors:
Patricia Gant,
Foad Ghasemi,
David Maeso,
Carmen Munuera,
Elena López-Elvira,
Riccardo Frisenda,
David Pérez De Lara,
Gabino Rubio-Bollinger,
Mar Garcia-Hernandez,
Andres Castellanos-Gomez
Abstract:
We study mechanically exfoliated nanosheets of franckeite by quantitative optical microscopy. The analysis of transmission mode and epi-illumination mode optical microscopy images provides a rapid method to estimate the thickness of the exfoliated flakes at first glance. A quantitative analysis of the optical contrast spectra by means of micro-reflectance allows one to determine the refractive ind…
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We study mechanically exfoliated nanosheets of franckeite by quantitative optical microscopy. The analysis of transmission mode and epi-illumination mode optical microscopy images provides a rapid method to estimate the thickness of the exfoliated flakes at first glance. A quantitative analysis of the optical contrast spectra by means of micro-reflectance allows one to determine the refractive index of franckeite in a broad range of the visible spectrum through a fit of the acquired spectra to a Fresnel law based model.
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Submitted 11 October, 2018;
originally announced October 2018.
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Lithography-free electrical transport measurements on 2D materials by direct microprobing
Authors:
Patricia Gant,
Yue Niu,
Simon A. Svatek,
Nicolás Agraït,
Carmen Munuera,
Mar García- Hernández,
Riccardo Frisenda,
David Perez de Lara,
Andres Castellanos-Gomez
Abstract:
We present a method to carry out electrical and opto-electronic measurements on 2D materials using carbon fiber microprobes to directly make electrical contacts to the 2D materials without damaging them. The working principle of this microprobing method is illustrated by measuring transport in MoS2 flakes in vertical (transport in the out-of-plane direction) and lateral (transport within the cryst…
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We present a method to carry out electrical and opto-electronic measurements on 2D materials using carbon fiber microprobes to directly make electrical contacts to the 2D materials without damaging them. The working principle of this microprobing method is illustrated by measuring transport in MoS2 flakes in vertical (transport in the out-of-plane direction) and lateral (transport within the crystal plane) configurations, finding performances comparable to those reported for MoS2 devices fabricated by conventional lithographic process. We also show that this method can be used with other 2D materials.
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Submitted 20 May, 2017;
originally announced May 2017.
