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Silicon nitride on-chip C-band spontaneous emission generation based on lanthanide doped microparticles
Authors:
Dmitry V. Obydennov,
Ilya M. Asharchuk,
Alexander M. Mumlyakov,
Maxim V. Shibalov,
Nikolay A. Vovk,
Ivan A. Filippov,
Lidiya S. Volkova,
Michael A. Tarkhov
Abstract:
The integration of active light-emitting elements into planar photonic circuits on a silicon nitride platform remains challenging due to material incompatibilities and high-temperature processing. Proposed hybrid method embeds monodisperse luminescent particles into lithographically defined wells above a 200 nm-thick silicon nitride taper coupler. A fabrication process involving wells etching, par…
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The integration of active light-emitting elements into planar photonic circuits on a silicon nitride platform remains challenging due to material incompatibilities and high-temperature processing. Proposed hybrid method embeds monodisperse luminescent particles into lithographically defined wells above a 200 nm-thick silicon nitride taper coupler. A fabrication process involving wells etching, particle deposition, and planarization enables precise integration while maintaining waveguide integrity. When pumped at 950 nm with a diode laser, the device emits broadband radiation in the 1500-1600 nm range, covering the optical telecommunication C-band. Numerical simulations yield an average coupling efficiency of 0.25% into the fundamental waveguide mode, suggesting significant potential for further device optimization. The approach provides a scalable route for integrating broadband telecommunications emitters on a silicon nitride platform.
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Submitted 15 July, 2025;
originally announced July 2025.
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Response of a Cold-Electron Bolometer in a coplanar antenna system
Authors:
D. A. Pimanov,
A. L. Pankratov,
A. V. Gordeeva,
A. V. Chiginev,
A. V. Blagodatkin,
L. S. Revin,
S. A. Razov,
V. Yu. Safonova,
I. A. Fedotov,
E. V. Skorokhodov,
A. N. Orlova,
D. A. Tatarsky,
N. S. Gusev,
I. V. Trofimov,
A. M. Mumlyakov,
M. A. Tarkhov
Abstract:
Cold electron bolometers have shown their suitability for use in modern fundamental physical experiments. Fabrication and measurements of the samples with cold-electron bolometers integrated into coplanar antennas are performed in this study. The bolometric layer was made using combined aluminum-hafnium technology to improve quality of aluminum oxide layer and decrease the leakage current. The sam…
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Cold electron bolometers have shown their suitability for use in modern fundamental physical experiments. Fabrication and measurements of the samples with cold-electron bolometers integrated into coplanar antennas are performed in this study. The bolometric layer was made using combined aluminum-hafnium technology to improve quality of aluminum oxide layer and decrease the leakage current. The samples of two types were measured in a dilution cryostat at various temperatures from 20 to 300 mK. The first sample with Ti/Au/Pd antenna shows response in the two frequency bands, at 7--9 GHz with bandwidth of about 20%, and also at 14 GHz with 10% bandwidth. The NEP below 10 aW/Hz^1/2 is reached at 300 mK for 7.7 GHz signal. The second sample with aluminum made antenna shows response in the frequency range 0.5--3 GHz due to the effect of kinetic inductance of superconducting aluminum.
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Submitted 10 December, 2024;
originally announced December 2024.
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Enchanced reflectance SiN$_x$ / SiO$_x$ DBR mirror based on TEOS precursor fabricated by PECVD method
Authors:
I. M. Asharchuk,
M. V. Shibalov,
A. M. Mumlyakov,
P. A. Nekludova,
G. D. Diudbin,
E. V. Zenova,
N. V. Minaev,
A. A. Pavlov,
M. A. Tarkhov
Abstract:
In this study, we investigated the influence of silicon oxide roughness produced from the gas precursor monosilane (SiH$_4$) and the silicon-organic precursor tetraethoxysilane (TEOS) on the optical qualities of a distributed Bragg reflector (DBR). A significant influence of the precursors from which SiOx is deposited on the optical qualities of DBR mirrors is demonstrated in this study. It has be…
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In this study, we investigated the influence of silicon oxide roughness produced from the gas precursor monosilane (SiH$_4$) and the silicon-organic precursor tetraethoxysilane (TEOS) on the optical qualities of a distributed Bragg reflector (DBR). A significant influence of the precursors from which SiOx is deposited on the optical qualities of DBR mirrors is demonstrated in this study. It has been shown experimentally that a mirror produced from the TEOS precursor is endowed with better qualities than a mirror produced using SiH4, that is, the reflectivity increased by 20% and optical losses decreased by half. The roughness average (Ra) of the SiN$_x$/SiO$_x$ / (TEOS) mirror surface decreased by a factor of five compared to that of the SiN$_x$/SiO$_x$ / (SiH4) mirror
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Submitted 22 December, 2021;
originally announced December 2021.
