Showing 1–6 of 6 results for author: Muduli, P K

Symmetry Enhanced Unconventional Spin Current Anisotropy in a Collinear Antiferromagnet

Authors: Pankhuri Gupta, Kacho Imtiyaz Ali Khan, Akash Kumar, Rekha Agarwal, Nidhi Kandwal, Ram Singh Yadav, Johan Åkerman, Pranaba Kishor Muduli

Abstract: Spin-orbit torque (SOT) presents a promising avenue for energy-efficient spintronics devices, surpassing the limitations of spin transfer torque. While extensively studied in heavy metals, SOT in antiferromagnetic quantum materials remains largely unexplored. Here, we investigate SOT in epitaxial FeSn, a collinear antiferromagnet with a kagome lattice. FeSn exhibits intriguing topological quantum… ▽ More Spin-orbit torque (SOT) presents a promising avenue for energy-efficient spintronics devices, surpassing the limitations of spin transfer torque. While extensively studied in heavy metals, SOT in antiferromagnetic quantum materials remains largely unexplored. Here, we investigate SOT in epitaxial FeSn, a collinear antiferromagnet with a kagome lattice. FeSn exhibits intriguing topological quantum features, including two-dimensional flat bands and Dirac-like surface states, making it an ideal platform for investigating emergent SOT properties. Using spin-torque ferromagnetic resonance, we uncover a six-fold symmetric damping-like SOT in epitaxial-FeSn/Py heterostructures, reflecting the six-fold symmetry of the epitaxial [0001]-oriented FeSn films. Additionally, we observe a substantial unconventional field-like torque, originating from spin currents with out-of-plane spin polarization. This torque exhibits a unique angular dependence-a superposition of six-fold crystalline symmetry and uniaxial symmetry associated with the antiferromagnetic spin Hall effect. Notably, the unconventional field-like torque is enhanced when the RF current flows along the Neel vector in FeSn. Our findings reveal an unconventional spin current anisotropy tunable by crystalline and magnetic symmetry, offering a novel approach for controlling SOT in antiferromagnetic spintronics. △ Less

Submitted 31 March, 2025; v1 submitted 26 March, 2025; originally announced March 2025.

Ultra-fast spin Hall nano-oscillator based microwave spectral analysis

Authors: Pankhuri Gupta, Artem Litvinenko, Akash Kumar, Pranaba Kishor Muduli, Johan Åkerman

Abstract: Ultra-fast spectrum analysis concept based on rapidly tuned spintronic nano-oscillators has been under development for the last few years and has already demonstrated promising results. Here, we demonstrate an ultra-fast microwave spectrum analyzer based on a chain of five mutually synchronized nano-constriction spin Hall nano-oscillators (SHNOs). As mutual synchronization affords the chain a much… ▽ More Ultra-fast spectrum analysis concept based on rapidly tuned spintronic nano-oscillators has been under development for the last few years and has already demonstrated promising results. Here, we demonstrate an ultra-fast microwave spectrum analyzer based on a chain of five mutually synchronized nano-constriction spin Hall nano-oscillators (SHNOs). As mutual synchronization affords the chain a much improved signal quality, with linewidths well below 1 MHz at close to a 10 GHz operating frequency, we observe an order of magnitude better frequency resolution bandwidth compared to previously reported spectral analysis based on single magnetic tunnel junction based spin torque nano-oscillators. The high-frequency operation and ability to synchronize long SHNO chains and large arrays make SHNOs ideal candidates for ultra-fast microwave spectral analysis. △ Less

Submitted 6 November, 2024; originally announced November 2024.

Comments: 5 Figures

Phase-Binarized Spintronic Oscillators for Combinatorial Optimization, and Comparison with Alternative Classical and Quantum Methods

Authors: Neha Garg, Sanyam Singhal, Nakul Aggarwal, Aniket Sadashiva, Pranaba K. Muduli, Debanjan Bhowmik

Abstract: Solving combinatorial optimization problems efficiently through emerging hardware by converting the problem to its equivalent Ising model and obtaining its ground state is known as Ising computing. Phase-binarized oscillators (PBO), modeled through the Kuramoto model, have been proposed for Ising computing, and various device technologies have been used to experimentally implement such PBOs. In th… ▽ More Solving combinatorial optimization problems efficiently through emerging hardware by converting the problem to its equivalent Ising model and obtaining its ground state is known as Ising computing. Phase-binarized oscillators (PBO), modeled through the Kuramoto model, have been proposed for Ising computing, and various device technologies have been used to experimentally implement such PBOs. In this paper, we show that an array of four dipole-coupled uniform-mode spin Hall nano oscillators (SHNOs) can be used to implement such PBOs and solve the NP-Hard combinatorial problem MaxCut on 4-node complete weighted graphs. We model the spintronic oscillators through two techniques: an approximate model for coupled magnetization dynamics of spin oscillators, and Landau Lifshitz Gilbert Slonckzweski (LLGS) equation-based more accurate magnetization dynamics modeling of such oscillators. Next, we compare the performance of these room-temperature-operating spin oscillators, as well as generalized PBOs, with two other alternative methods that solve the same MaxCut problem: a classical approximation algorithm, known as Goemans-Williamson's (GW) algorithm, and a Noisy Intermediate Scale Quantum (NISQ) algorithm, known as Quantum Approximation Optimization Algorithm (QAOA). For four types of graphs, with graph size up to twenty nodes, we show that approximation ratio (AR) and success probability (SP) obtained for generalized PBOs (Kuramoto model), as well as spin oscillators, are comparable to that for GW and much higher than that of QAOA for almost all graph instances. Moreover, unlike GW, the time to solution (TTS) for generalized PBOs and spin oscillators does not grow with graph size for the instances we have explored. This can be a major advantage for PBOs in general and spin oscillators specifically for solving these types of problems, along with the accuracy of solutions they deliver. △ Less

Submitted 6 November, 2023; v1 submitted 26 June, 2023; originally announced June 2023.

Comments: 29 pages, 15 figures

Large spin Hall conductivity in epitaxial thin films of kagome antiferromagnet Mn$_3$Sn at room temperature

Authors: Himanshu Bangar, Kacho Imtiyaz Ali Khan, Akash Kumar, Niru Chowdhury, Prasanta Kumar Muduli, Pranaba Kishor Muduli

Abstract: Mn$_3$Sn is a non-collinear antiferromagnetic quantum material that exhibits a magnetic Weyl semimetallic state and has great potential for efficient memory devices. High-quality epitaxial $c$-plane Mn$_3$Sn thin films have been grown on a sapphire substrate using a Ru seed layer. Using spin pumping induced inverse spin Hall effect measurements on $c$-plane epitaxial Mn$_3$Sn/Ni$_{80}$Fe$_{20}$, w… ▽ More Mn$_3$Sn is a non-collinear antiferromagnetic quantum material that exhibits a magnetic Weyl semimetallic state and has great potential for efficient memory devices. High-quality epitaxial $c$-plane Mn$_3$Sn thin films have been grown on a sapphire substrate using a Ru seed layer. Using spin pumping induced inverse spin Hall effect measurements on $c$-plane epitaxial Mn$_3$Sn/Ni$_{80}$Fe$_{20}$, we measure spin-diffusion length ($λ_{\rm Mn_3Sn}$), and spin Hall conductivity ($σ_{\rm{SH}}$) of Mn$_3$Sn thin films: $λ_{\rm Mn_3Sn}=0.42\pm 0.04$ nm and $σ_{\rm{SH}}=-702~\hbar/ e~Ω^{-1}$cm$^{-1}$. While $λ_{\rm Mn_3Sn}$ is consistent with earlier studies, $σ_{\rm{SH}}$ is an order of magnitude higher and of the opposite sign. The behavior is explained on the basis of excess Mn, which shifts the Fermi level in our films, leading to the observed behavior. Our findings demonstrate a technique for engineering $σ_{\rm{SH}}$ of Mn$_3$Sn films by employing Mn composition for functional spintronic devices. △ Less

Submitted 6 September, 2022; originally announced September 2022.

Comments: 5 pages, 2 figures

Large spin-to-charge conversion at the two-dimensional interface of transition metal dichalcogenides and permalloy

Authors: Himanshu Bangar, Akash Kumar, Niru Chowdhury, Richa Mudgal, Pankhuri Gupta, Ram Singh Yadav, Samaresh Das, P. K. Muduli

Abstract: Spin-to-charge conversion is an essential requirement for the implementation of spintronic devices. Recently, monolayers of semiconducting transition metal dichalcogenides (TMDs) have attracted considerable interest for spin-to-charge conversion due to their high spin-orbit coupling and lack of inversion symmetry in their crystal structure. However, reports of direct measurement of spin-to-charge… ▽ More Spin-to-charge conversion is an essential requirement for the implementation of spintronic devices. Recently, monolayers of semiconducting transition metal dichalcogenides (TMDs) have attracted considerable interest for spin-to-charge conversion due to their high spin-orbit coupling and lack of inversion symmetry in their crystal structure. However, reports of direct measurement of spin-to-charge conversion at TMD-based interfaces are very much limited. Here, we report on the room temperature observation of a large spin-to-charge conversion arising from the interface of Ni$_{80}$Fe$_{20}$ (Py) and four distinct large area ($\sim 5\times2$~mm$^2$) monolayer (ML) TMDs namely, MoS$_2$, MoSe$_2$, WS$_2$, and WSe$_2$. We show that both spin mixing conductance and the Rashba efficiency parameter ($λ_{IREE}$) scales with the spin-orbit coupling strength of the ML TMD layers. The $λ_{IREE}$ parameter is found to range between $-0.54$ and $-0.76$ nm for the four monolayer TMDs, demonstrating a large spin-to-charge conversion. Our findings reveal that TMD/ferromagnet interface can be used for efficient generation and detection of spin current, opening new opportunities for novel spintronic devices. △ Less

Submitted 1 September, 2022; originally announced September 2022.

Comments: This document is the unedited Author's version of a Submitted Work that was subsequently accepted for publication in ACS Appl. Mater. Interfaces [copyright ACS Publishing] after peer review

Journal ref: ACS Appl. Mater. Interfaces (2022)

Direct measurement of interfacial Dzyaloshinskii-Moriya interaction at the MoS$_{\rm 2}$/Ni$_{80}$Fe$_{20}$ interface

Authors: Akash Kumar, Avinash Kumar Chaurasiya, Niru Chowdhury, Amrit Kumar Mondal, Rajni Bansal, Arun Barvat, Suraj P Khanna, Prabir Pal, Sujeet Chaudhary, Anjan Barman, P. K. Muduli

Abstract: We report on a direct measurement of sizable interfacial Dzyaloshinskii-Moriya interaction (iDMI) at the interface of two-dimensional transition metal dichalcogenide (2D-TMD), MoS$_{\rm 2}$ and Ni$_{80}$Fe$_{20}$ (Py) using Brillouin light scattering spectroscopy. A clear asymmetry in spin-wave dispersion is measured in MoS$_{\rm 2}$/Py/Ta, while no such asymmetry is detected in the reference Py/T… ▽ More We report on a direct measurement of sizable interfacial Dzyaloshinskii-Moriya interaction (iDMI) at the interface of two-dimensional transition metal dichalcogenide (2D-TMD), MoS$_{\rm 2}$ and Ni$_{80}$Fe$_{20}$ (Py) using Brillouin light scattering spectroscopy. A clear asymmetry in spin-wave dispersion is measured in MoS$_{\rm 2}$/Py/Ta, while no such asymmetry is detected in the reference Py/Ta system. A linear scaling of the DMI constant with the inverse of Py thickness indicates the interfacial origin of the observed DMI. We further observe an enhancement of DMI constant in three to four layer MoS$_{\rm 2}$/Py system (by 56$\%$) as compared to 2 layer MoS$_{\rm 2}$/Py which is caused by a higher density of MoO$_{\rm 3}$ defect species in the case of three to four layer MoS$_{\rm 2}$. The results open possibilities of spin-orbitronic applications utilizing the 2D-TMD based heterostructures. △ Less

Submitted 15 June, 2020; v1 submitted 14 April, 2020; originally announced April 2020.

Journal ref: Appl. Phys. Lett. 116, 232405 (2020)