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High-performance Hybrid Lithium Niobate Electro-optic Modulators Integrated with Low-loss Silicon Nitride Waveguides on a Wafer-scale Silicon Photonics Platform
Authors:
Md Arifur Rahman,
Forrest Valdez,
Viphretuo Mere,
Camiel Op de Beeck,
Pieter Wuytens,
Shayan Mookherjea
Abstract:
Heterogeneously-integrated electro-optic modulators (EOM) are demonstrated using the hybrid-mode concept, incorporating thin-film lithium niobate (LN) by bonding with silicon nitride (SiN) passive photonics. At wavelengths near 1550 nm, these EOMs demonstrated greater than 30 dB extinction ratio, 3.8 dB on-chip insertion loss, a low-frequency half-wave voltage-length product ($V_πL$) of 3.8…
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Heterogeneously-integrated electro-optic modulators (EOM) are demonstrated using the hybrid-mode concept, incorporating thin-film lithium niobate (LN) by bonding with silicon nitride (SiN) passive photonics. At wavelengths near 1550 nm, these EOMs demonstrated greater than 30 dB extinction ratio, 3.8 dB on-chip insertion loss, a low-frequency half-wave voltage-length product ($V_πL$) of 3.8 $V.{}cm$, and a 3-dB EO modulation bandwidth exceeding 110 GHz. This work demonstrates the combination of multi-layer low-loss SiN waveguides with high-performance LN EOMs made in a scalable fabrication process using conventional low-resistivity silicon (Si) wafers.
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Submitted 1 April, 2025; v1 submitted 31 March, 2025;
originally announced April 2025.
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100 GHz Bandwidth, 1 Volt Near-infrared Electro-optic Mach-Zehnder Modulator
Authors:
Forrest Valdez,
Viphretuo Mere,
Shayan Mookherjea
Abstract:
An integrated hybrid thin-film lithium niobate (TFLN) electro-optic Mach-Zehnder modulator (MZM) is shown at near-infrared wavelengths. The design uses TFLN bonded to planarized silicon nitride waveguide circuits, and does not require etching or patterning of TFLN. The push-pull MZM achieves a half-wave voltage length product ($V_πL$) of 0.8 V$.$cm at 784 nm. MZM devices with 0.4 cm and 0.8 cm mod…
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An integrated hybrid thin-film lithium niobate (TFLN) electro-optic Mach-Zehnder modulator (MZM) is shown at near-infrared wavelengths. The design uses TFLN bonded to planarized silicon nitride waveguide circuits, and does not require etching or patterning of TFLN. The push-pull MZM achieves a half-wave voltage length product ($V_πL$) of 0.8 V$.$cm at 784 nm. MZM devices with 0.4 cm and 0.8 cm modulation length show a broadband electro-optic response with a 3 dB bandwidth beyond 100 GHz, with the latter showing a bandwidth to half-wave voltage ratio of 100 GHz/V.
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Submitted 23 November, 2022;
originally announced November 2022.
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Integrated O- and C-band Silicon-Lithium Niobate Mach-Zehnder Modulators with 100 GHz Bandwidth, Low Voltage, and Low Loss
Authors:
Forrest Valdez,
Viphretuo Mere,
Xiaoxi Wang,
Shayan Mookherjea
Abstract:
Broadband integrated thin-film lithium niobate (TFLN) electro-optic modulators (EOM) are desirable for optical communications and signal processing in both the O-band (1310 nm) and C-band (1550 nm). To address these needs, we design and demonstrate Mach-Zehnder (MZ) EOM devices in a hybrid platform based on TFLN bonded to foundry-fabricated silicon photonic waveguides. Using a single silicon litho…
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Broadband integrated thin-film lithium niobate (TFLN) electro-optic modulators (EOM) are desirable for optical communications and signal processing in both the O-band (1310 nm) and C-band (1550 nm). To address these needs, we design and demonstrate Mach-Zehnder (MZ) EOM devices in a hybrid platform based on TFLN bonded to foundry-fabricated silicon photonic waveguides. Using a single silicon lithography step and a single bonding step, we realize MZ EOM devices which cover both wavelength ranges on the same chip. The EOM devices achieve 100 GHz EO bandwidth (referenced to 1 GHz) and about 2-3 V$.$cm figure-of-merit ($V_πL$) with low on-chip optical loss in both the O-band and C-band.
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Submitted 25 January, 2023; v1 submitted 9 November, 2022;
originally announced November 2022.
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110 GHz, 110 mW Hybrid Silicon-Lithium Niobate Mach-Zehnder Modulator
Authors:
Forrest Valdez,
Viphretuo Mere,
Xiaoxi Wang,
Nicholas Boynton,
Thomas A. Friedmann,
Shawn Arterburn,
Christina Dallo,
Andrew T. Pomerene,
Andrew L. Starbuck,
Douglas C. Trotter,
Anthony L. Lentine,
Shayan Mookherjea
Abstract:
High bandwidth, low voltage electro-optic modulators with high optical power handling capability are important for improving the performance of analog optical communications and RF photonic links. Here we designed and fabricated a thin-film lithium niobate (LN) Mach-Zehnder modulator (MZM) which can handle high optical power of 110 mW, while having 3-dB bandwidth greater than 110 GHz at 1550 nm. T…
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High bandwidth, low voltage electro-optic modulators with high optical power handling capability are important for improving the performance of analog optical communications and RF photonic links. Here we designed and fabricated a thin-film lithium niobate (LN) Mach-Zehnder modulator (MZM) which can handle high optical power of 110 mW, while having 3-dB bandwidth greater than 110 GHz at 1550 nm. The design does not require etching of thin-film LN, and uses hybrid optical modes formed by bonding LN to planarized silicon photonic waveguide circuits. A high optical power handling capability in the MZM was achieved by carefully tapering the underlying Si waveguide to reduce the impact of optically-generated carriers, while retaining a high modulation efficiency. The MZM has a $V_πL$ product of 3.1 V$.$cm and an on-chip optical insertion loss of 1.8 dB.
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Submitted 26 October, 2022;
originally announced October 2022.
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Second harmonic microscopy of poled x-cut thin film lithium niobate: Understanding the contrast mechanism
Authors:
Michael Ruesing,
Jie Zhao,
Shayan Mookherjea
Abstract:
Thin film lithium niobate is of great recent interest and an understanding of periodically poled thin-films is crucial for both fundamental physics and device developments. Second-harmonic (SH) microscopy allows for the non-invasive visualization and analysis of ferroelectric domain structures and walls. While the technique is well understood in bulk lithium niobate, SH microscopy in thin films is…
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Thin film lithium niobate is of great recent interest and an understanding of periodically poled thin-films is crucial for both fundamental physics and device developments. Second-harmonic (SH) microscopy allows for the non-invasive visualization and analysis of ferroelectric domain structures and walls. While the technique is well understood in bulk lithium niobate, SH microscopy in thin films is largely influenced by interfacial reflections and resonant enhancements, which depend on film thicknesses and the substrate materials. We present a comprehensive analysis of SH microscopy in x-cut lithium niobate thin films, based on a full three dimensional focus calculations, and accounting for interface reflections. We show that the dominant signal in back-reflection originates from a co-propagating phase-matched process observed through reflections, rather than direct detection of the counter-propagating signal as in bulk samples. We can explain the observation of domain structures in the thin film geometry, and in particular, we show that the SH signal from thin poled films allows to unambiguously distinguish areas, which are completely or only partly inverted in depth.
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Submitted 7 June, 2019;
originally announced June 2019.
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Hybrid Silicon Photonic-Lithium Niobate Electro-Optic Mach-Zehnder Modulator Beyond 100 GHz Bandwidth
Authors:
Peter O. Weigel,
Jie Zhao,
Kelvin Fang,
Hasan Al-Rubaye,
Douglas Trotter,
Dana Hood,
John Mudrick,
Christina Dallo,
Andrew T. Pomerene,
Andrew L. Starbuck,
Christopher T. DeRose,
Anthony L. Lentine,
Gabriel Rebeiz,
Shayan Mookherjea
Abstract:
Electro-optic modulation, the imprinting of a radio-frequency (RF) waveform on an optical carrier, is one of the most important photonics functions, being crucial for high-bandwidth signal generation, optical switching, waveform shaping, data communications, ultrafast measurements, sampling, timing and ranging, and RF photonics. Although silicon (Si) photonic electro-optic modulators (EOMs) can be…
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Electro-optic modulation, the imprinting of a radio-frequency (RF) waveform on an optical carrier, is one of the most important photonics functions, being crucial for high-bandwidth signal generation, optical switching, waveform shaping, data communications, ultrafast measurements, sampling, timing and ranging, and RF photonics. Although silicon (Si) photonic electro-optic modulators (EOMs) can be fabricated using wafer-scale technology compatible with the semiconductor industry, such devices do not exceed an electrical 3-dB bandwidth of about 50 GHz, whereas many applications require higher RF frequencies. Bulk Lithium Niobate (LN) and etched LN modulators can scale to higher bandwidths, but are not integrated with the Si photonics fabrication process adopted widely over the last decade. As an alternative, an ultra-high-bandwidth Mach-Zehnder EOM based on Si photonics is shown, made using conventional lithography and wafer-scale fabrication, bonded to an unpatterned LN thin film. This hybrid LN-Si MZM achieves beyond 100 GHz 3-dB electrical bandwidth. Our design integrates silicon photonics light input/output and optical components, including directional couplers, low-radius bends, and path-length difference segments, realized in a foundry Si photonics process. The use of a simple low-temperature (200C) back-end integration process to bond a postage-stamp-sized piece of LN where desired, and achieving light routing into and out of LN to harness its electro-optic property without any etching or patterning of the LN film, may be broadly-useful strategies for advanced integrated opto-electronic microchips.
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Submitted 23 May, 2018; v1 submitted 27 March, 2018;
originally announced March 2018.
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Silicon Photonic Entangled Photon-Pair and Heralded Single Photon Generation with CAR $>$ 12,000 and $g^{(2)}(0)<$ 0.006
Authors:
Chaoxuan Ma,
Xiaoxi Wang,
Vikas Anant,
Andrew D. Beyer,
Matthew D. Shaw,
Shayan Mookherjea
Abstract:
We report measurements of time-frequency entangled photon pairs and heralded single photons at 1550~nm wavelengths generated using a microring resonator pumped optically by a diode laser. Along with a high spectral brightness of pair generation, the conventional metrics used to describe performance, such as Coincidences-to-Accidentals Ratio (CAR), conditional self-correlation [$g^{(2)}(0)$], two-p…
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We report measurements of time-frequency entangled photon pairs and heralded single photons at 1550~nm wavelengths generated using a microring resonator pumped optically by a diode laser. Along with a high spectral brightness of pair generation, the conventional metrics used to describe performance, such as Coincidences-to-Accidentals Ratio (CAR), conditional self-correlation [$g^{(2)}(0)$], two-photon energy-time {F}ranson interferometric visibility etc. are shown to reach a high-performance regime not yet achieved by silicon photonics, and attained previously only by crystal, glass and fiber-based pair-generation devices.
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Submitted 5 October, 2017; v1 submitted 3 October, 2017;
originally announced October 2017.
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Generating photon pairs from a silicon microring resonator using an electronic step recovery diode for pump pulse generation
Authors:
Marc Savanier,
Shayan Mookherjea
Abstract:
Generation of photon pairs from compact, manufacturable and inexpensive silicon (Si) photonic devices at room temperature may help develop practical applications of quantum photonics. An important characteristic of photon-pair generation is the two-photon joint spectral intensity (JSI), which describes the frequency correlations of the photon pair. In particular, heralded single-photon generation…
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Generation of photon pairs from compact, manufacturable and inexpensive silicon (Si) photonic devices at room temperature may help develop practical applications of quantum photonics. An important characteristic of photon-pair generation is the two-photon joint spectral intensity (JSI), which describes the frequency correlations of the photon pair. In particular, heralded single-photon generation requires uncorrelated photons, rather than the highly anti-correlated photons conventionally obtained under continuous-wave (CW) pumping. Recent attempts to achieve such a factorizable JSI have used short optical pulses from mode-locked lasers, which are much more expensive and bigger table-top or rack-sized instruments compared to the Si microchip pair generator, dominate the cost and inhibit the miniaturization of the source. Here, we generate photon pairs from a Si microring resonator by using an electronic step-recovery diode to drive an electro-optic modulator which carves the pump light from a CW optical diode into pulses of the appropriate width, thus potentially eliminating the need for optical mode-locked lasers.
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Submitted 1 April, 2016;
originally announced April 2016.
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Photon pair generation from compact silicon microring resonators using microwatt-level pump powers
Authors:
Marc Savanier,
Ranjeet Kumar,
Shayan Mookherjea
Abstract:
Microring resonators made from silicon are becoming a popular microscale device format for generating photon pairs at telecommunications wavelengths at room temperature. In compact devices with a footprint less than $5\times 10^{-4}$ mm$^2$, we demonstrate pair generation using only a few microwatts of average pump power. We discuss the role played by important parameters such as the loss, group-v…
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Microring resonators made from silicon are becoming a popular microscale device format for generating photon pairs at telecommunications wavelengths at room temperature. In compact devices with a footprint less than $5\times 10^{-4}$ mm$^2$, we demonstrate pair generation using only a few microwatts of average pump power. We discuss the role played by important parameters such as the loss, group-velocity dispersion and the ring-waveguide coupling coefficient in finding the optimum operating point for silicon microring pair generation. Silicon photonics can be fabricated using deep ultraviolet lithography wafer-scale fabrication processes, which is scalable and cost-effective. Such small devices and low pump power requirements, and the side-coupled waveguide geometry which uses an integrated waveguide, could be beneficial for future scaled-up architectures where many pair-generation devices are required on the same chip.
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Submitted 12 February, 2016; v1 submitted 10 November, 2015;
originally announced November 2015.
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Hybrid Lithium Niobate and Silicon Photonic Waveguides
Authors:
Peter O. Weigel,
Marc Savanier,
Christopher DeRose,
Andrew T. Pomerene,
Andrew L. Starbuck,
Anthony L. Lentine,
Vincent Stenger,
Shayan Mookherjea
Abstract:
We describe a hybrid lithium niobate (LN) / silicon (Si) optical waveguiding platform at near infrared wavelengths. Various optical circuit elements, such as waveguides, bends, and couplers are demonstrated in two hybrid cross sections, A and B, with different LN confinement factors (32% and 90%, respectively) of the fundamental quasi TE mode. Such a large LN confinement factor is achieved with ad…
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We describe a hybrid lithium niobate (LN) / silicon (Si) optical waveguiding platform at near infrared wavelengths. Various optical circuit elements, such as waveguides, bends, and couplers are demonstrated in two hybrid cross sections, A and B, with different LN confinement factors (32% and 90%, respectively) of the fundamental quasi TE mode. Such a large LN confinement factor is achieved with adiabatic tapers that preserve the symmetry of the fundamental quasi TE mode and prevent mode rotation. We find the average propagation loss in cross section B to be 4.3 dB/cm with a standard deviation of 2.1 dB/cm, comparable with a 3 um SiO2 clad (in place of LN) Si waveguide whose average propagation loss was 3.1 dB/cm with a standard deviation of 2.1 dB/cm.
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Submitted 6 October, 2015;
originally announced October 2015.
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Wide-span and tunable-wavelength photon pairs around 1.55 μm from a silicon nanophotonic chip
Authors:
Ranjeet Kumar,
Jun Rong Ong,
John Recchio,
Kartik Srinivasan,
Shayan Mookherjea
Abstract:
Using a compact optically-pumped silicon nanophotonic chip consisting of coupled silicon microrings, we generate photon pairs in multiple pairs of wavelengths around 1.55 μm. The wavelengths are tunable over several nanometers, demonstrating the capability to generate wavelength division multiplexed photon pairs at freely-chosen telecommunications-band wavelengths.
Using a compact optically-pumped silicon nanophotonic chip consisting of coupled silicon microrings, we generate photon pairs in multiple pairs of wavelengths around 1.55 μm. The wavelengths are tunable over several nanometers, demonstrating the capability to generate wavelength division multiplexed photon pairs at freely-chosen telecommunications-band wavelengths.
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Submitted 17 April, 2013;
originally announced April 2013.
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Quantum light generation on a silicon chip using waveguides and resonators
Authors:
Jun Rong Ong,
Shayan Mookherjea
Abstract:
Integrated optical devices may replace bulk crystal or fiber based assemblies with a more compact and controllable photon pair and heralded single photon source and generate quantum light at telecommunications wavelengths. Here, we propose that a periodic waveguide consisting of a sequence of optical resonators may outperform conventional waveguides or single resonators and generate more than 1 Gi…
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Integrated optical devices may replace bulk crystal or fiber based assemblies with a more compact and controllable photon pair and heralded single photon source and generate quantum light at telecommunications wavelengths. Here, we propose that a periodic waveguide consisting of a sequence of optical resonators may outperform conventional waveguides or single resonators and generate more than 1 Giga-pairs per second from a sub-millimeter-long room-temperature silicon device, pumped with only about 10 milliwatts of optical power. Furthermore, the spectral properties of such devices provide novel opportunities of wavelength-division multiplexed chip-scale quantum light sources.
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Submitted 4 October, 2012;
originally announced October 2012.
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Telecommunications-band heralded single photons from a silicon nanophotonic chip
Authors:
Marcelo Davanco,
Jun Rong Ong,
Andrea Bahgat Shehata,
Alberto Tosi,
Imad Agha,
Solomon Assefa,
Fengnian Xia,
William M. J. Green,
Shayan Mookherjea,
Kartik Srinivasan
Abstract:
We demonstrate heralded single photon generation in a CMOS-compatible silicon nanophotonic device. The strong modal confinement and slow group velocity provided by a coupled resonator optical waveguide (CROW) produced a large four-wave-mixing nonlinearity coefficient gamma_eff ~4100 W^-1 m^-1 at telecommunications wavelengths. Spontaneous four-wave-mixing using a degenerate pump beam at 1549.6 nm…
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We demonstrate heralded single photon generation in a CMOS-compatible silicon nanophotonic device. The strong modal confinement and slow group velocity provided by a coupled resonator optical waveguide (CROW) produced a large four-wave-mixing nonlinearity coefficient gamma_eff ~4100 W^-1 m^-1 at telecommunications wavelengths. Spontaneous four-wave-mixing using a degenerate pump beam at 1549.6 nm created photon pairs at 1529.5 nm and 1570.5 nm with a coincidence-to-accidental ratio exceeding 20. A photon correlation measurement of the signal (1529.5 nm) photons heralded by the detection of the idler (1570.5 nm) photons showed antibunching with g^(2)(0) = 0.19 \pm 0.03. The demonstration of a single photon source within a silicon platform holds promise for future integrated quantum photonic circuits.
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Submitted 12 January, 2012;
originally announced January 2012.
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Analysis of Optical Pulse Propagation with ABCD Matrices
Authors:
Shayan Mookherjea,
Amnon Yariv
Abstract:
We review and extend the analogies between Gaussian pulse propagation and Gaussian beam diffraction. In addition to the well-known parallels between pulse dispersion in optical fiber and CW beam diffraction in free space, we review temporal lenses as a way to describe nonlinearities in the propagation equations, and then introduce further concepts that permit the description of pulse evolution i…
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We review and extend the analogies between Gaussian pulse propagation and Gaussian beam diffraction. In addition to the well-known parallels between pulse dispersion in optical fiber and CW beam diffraction in free space, we review temporal lenses as a way to describe nonlinearities in the propagation equations, and then introduce further concepts that permit the description of pulse evolution in more complicated systems. These include the temporal equivalent of a spherical dielectric interface, which is used by way of example to derive design parameters used in a recent dispersion-mapped soliton transmission experiment. Our formalism offers a quick, concise and powerful approach to analyzing a variety of linear and nonlinear pulse propagation phenomena in optical fibers.
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Submitted 3 March, 2001;
originally announced March 2001.
