Showing 1–4 of 4 results for author: Moodera, J S

Magnetically Modulated Electrical Switching in an Antiferromagnetic Transistor

Authors: Chung-Tao Chou, Eugene Park, Josep Ingla-Aynes, Julian Klein, Kseniia Mosina, Jagadeesh S. Moodera, Zdenek Sofer, Frances M. Ross, Luqiao Liu

Abstract: A spin version of transistor, where magnetism is used to influence electrical behaviors of the semiconductor, has been a long-pursued device concept in spintronics. In this work, we experimentally study a field-effect transistor with CrSBr, a van der Waals (vdW) antiferromagnetic semiconductor, as the channel material. Unlike the weak magnetic tunability of in-plane currents previously reported in… ▽ More A spin version of transistor, where magnetism is used to influence electrical behaviors of the semiconductor, has been a long-pursued device concept in spintronics. In this work, we experimentally study a field-effect transistor with CrSBr, a van der Waals (vdW) antiferromagnetic semiconductor, as the channel material. Unlike the weak magnetic tunability of in-plane currents previously reported in vdW magnets, the channel current of our transistor is efficiently tuned by both gate voltage and magnetic transitions, achieving a magnetoresistance ratio as high as 1500%. Combining measurement and theoretical modeling, we reveal magnetically modulated carrier concentration as the origin of the large magnetoresistance. The strategy of using both magnetic ordering and electric field in the same device to control ON/OFF states of a transistor opens a new avenue of energy-efficient spintronics for memory, logic and magnetic sensing applications. △ Less

Submitted 13 May, 2025; originally announced May 2025.

Magnon-mediated spin currents in Tm3Fe5O12/Pt with perpendicular magnetic anisotropy

Authors: G. L. S. Vilela, J. E. Abrao, E. Santos, Y. Yao, J. B. S. Mendes, R. L. Rodriguez-Suarez, S. M. Rezende, W. Han, A. Azevedo, J. S. Moodera

Abstract: The control of pure spin currents carried by magnons in magnetic insulator (MI) garnet films with a robust perpendicular magnetic anisotropy (PMA) is of great interest to spintronic technology as they can be used to carry, transport and process information. Garnet films with PMA present labyrinth domain magnetic structures that enrich the magnetization dynamics, and could be employed in more effic… ▽ More The control of pure spin currents carried by magnons in magnetic insulator (MI) garnet films with a robust perpendicular magnetic anisotropy (PMA) is of great interest to spintronic technology as they can be used to carry, transport and process information. Garnet films with PMA present labyrinth domain magnetic structures that enrich the magnetization dynamics, and could be employed in more efficient wave-based logic and memory computing devices. In MI/NM bilayers, where NM being a normal metal providing a strong spin-orbit coupling, the PMA benefits the spin-orbit torque (SOT) driven magnetization's switching by lowering the needed current and rendering the process faster, crucial for developing magnetic random-access memories (SOT-MRAM). In this work, we investigated the magnetic anisotropies in thulium iron garnet (TIG) films with PMA via ferromagnetic resonance measurements, followed by the excitation and detection of magnon-mediated pure spin currents in TIG/Pt driven by microwaves and heat currents. TIG films presented a Gilbert damping constant α~0.01, with resonance fields above 3.5 kOe and half linewidths broader than 60 Oe, at 300 K and 9.5 GHz. The spin-to-charge current conversion through TIG/Pt was observed as a micro-voltage generated at the edges of the Pt film. The obtained spin Seebeck coefficient was 0.54 μV/K, confirming also the high interfacial spin transparency. △ Less

Submitted 21 September, 2020; originally announced September 2020.

Large Enhancement of Critical Current in Superconducting Devices by Gate Voltage

Authors: Mirko Rocci, Dhavala Suri, Akashdeep Kamra, Gilvania Vilela, Norbert Nemes, Jose Luis Martinez, Mar Garcia Hernandez, Jagadeesh S. Moodera

Abstract: The gate-voltage-induced suppression of critical currents in metallic superconductors observed recently [De Simoni et al., Nat. Nanotechnol. 13, 802 (2018)] has raised crucial questions regarding the nature and mechanism of the electric field effect in these systems. Here, we demonstrate an enhancement of up to 30 % in critical current in the type II superconductor NbN, micro- and nano superconduc… ▽ More The gate-voltage-induced suppression of critical currents in metallic superconductors observed recently [De Simoni et al., Nat. Nanotechnol. 13, 802 (2018)] has raised crucial questions regarding the nature and mechanism of the electric field effect in these systems. Here, we demonstrate an enhancement of up to 30 % in critical current in the type II superconductor NbN, micro- and nano superconducting bridges, tunable via a back-gate voltage. Our suggested plausible mechanism of this enhancement in critical current based on surface nucleation and pinning of Abrikosov vortices is consistent with expectations and observations for type-II superconductor films with thicknesses comparable to their coherence length. Furthermore we demonstrate infinite electroresistance and a hysteretic resistance dependence on the applied electric field which could lead to logic and memory applications in a superconductors-based low-dissipation digital computing paradigm. Our work thus provides the first demonstration of an electric field enhancement in the superconducting property in metallic superconductors, constituting a crucial step towards understanding of electric field-effects on the fundamental properties of a superconductor and its exploitation for future technologies. △ Less

Submitted 28 January, 2021; v1 submitted 20 February, 2020; originally announced February 2020.

Modified electrical transport probe design for standard magnetometer

Authors: Badih A. Assaf, Thomas Cardinal, Peng Wei, Ferhat Katmis, Jagadeesh S. Moodera, Don Heiman

Abstract: Making electrical transport measurements on a material is often a time consuming process that involves testing a large number of samples. It is thus inconvenient to wire up and rewire samples on to a sample probe. We therefore present a method of modifying Quantum Design's MPMS SQUID magnetometer transport probe that simplifies the process of sample mounting. One of the difficulties to overcome is… ▽ More Making electrical transport measurements on a material is often a time consuming process that involves testing a large number of samples. It is thus inconvenient to wire up and rewire samples on to a sample probe. We therefore present a method of modifying Quantum Design's MPMS SQUID magnetometer transport probe that simplifies the process of sample mounting. One of the difficulties to overcome is the small diameter of the sample space. A small socket is designed and mounted on the probe so that various samples mounted on individual headers can be readily exchanged in the socket. We also present some test results on the topological insulator Bi2Te2Se using the modified probe. △ Less

Submitted 3 March, 2012; originally announced March 2012.