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Enhanced Tunnelling in a Hybrid of Single-Walled Carbon Nanotubes and Graphene
Authors:
Yongping Liao,
Kimmo Mustonen,
Semir Tulic,
Viera Skakalova,
Sabbir A. Khan,
Patrik Laiho,
Qiang Zhang,
Changfeng Li,
Mohammad R. A. Monazam,
Jani Kotakoski,
Harri Lipsanen,
Esko I. Kauppinen
Abstract:
Transparent and conductive films (TCFs) are of great technological importance. The high transmittance, electrical conductivity and mechanical strength make single-walled carbon nanotubes (SWCNTs) a good candidate for their raw material. Despite the ballistic transport in individual SWCNTs, however, the electrical conductivity of their networks is limited by low efficiency of charge tunneling betwe…
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Transparent and conductive films (TCFs) are of great technological importance. The high transmittance, electrical conductivity and mechanical strength make single-walled carbon nanotubes (SWCNTs) a good candidate for their raw material. Despite the ballistic transport in individual SWCNTs, however, the electrical conductivity of their networks is limited by low efficiency of charge tunneling between the tube elements. Here, we demonstrate that the nanotube network sheet resistance at high optical transmittance is decreased by more than 50% when fabricated on graphene and thus provides a comparable improvement as widely adopted gold chloride ($\mathrm{AuCl_3}$) doping. However, while Raman spectroscopy reveals substantial changes in spectral features of doped nanotubes, no similar effect is observed in presence of graphene. Instead, temperature dependent transport measurements indicate that graphene substrate reduces the tunneling barrier heights while its parallel conductivity contribution is almost negligible. Finally, we show that combining the graphene substrate and $\mathrm{AuCl_3}$ doping, the SWCNT thin films can exhibit sheet resistance as low as 36 $Ω$/sq. at 90% transmittance.
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Submitted 15 March, 2019;
originally announced March 2019.
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Direct visualization of the 3D structure of silicon impurities in graphene
Authors:
Christoph Hofer,
Viera Skakalova,
Mohammad Reza Ahmadpour Monazam,
Clemens Mangler,
Jani Kotakoski,
Toma Susi,
Jannik C. Meyer
Abstract:
We directly visualize the three-dimensional (3D) geometry and dynamics of silicon impurities in graphene as well as their dynamics by aberration-corrected scanning transmission electron microscopy. By acquiring images when the sample is tilted, we show that an asymmetry of the atomic position of the heteroatom in the projection reveals the non-planarity of the structure. From a sequence of images,…
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We directly visualize the three-dimensional (3D) geometry and dynamics of silicon impurities in graphene as well as their dynamics by aberration-corrected scanning transmission electron microscopy. By acquiring images when the sample is tilted, we show that an asymmetry of the atomic position of the heteroatom in the projection reveals the non-planarity of the structure. From a sequence of images, we further demonstrate that the Si atom switches between up- and down- configurations with respect to the graphene plane, with an asymmetric cross-section. We further analyze the 3D structure and dynamics of a silicon tetramer in graphene. Our results clarify the out-of-plane structure of impurities in graphene by direct experimental observation and open a new route to study their dynamics in three dimensions.
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Submitted 24 September, 2018;
originally announced September 2018.
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Revealing the 3D Structure of Graphene Defects
Authors:
Christoph Hofer,
Christian Kramberger,
Mohammad Reza Ahmadpour Monazam,
Clemens Mangler,
Andreas Mittelberger,
Giacomo Argentero,
Jani Kotakoski,
Jannik C. Meyer
Abstract:
We demonstrate insights into the three-dimensional structure of defects in graphene, in particular grain boundaries, obtained via a new approach from two transmission electron microscopy images recorded at different angles. The structure is obtained through an optimization process where both the atomic positions as well as the simulated imaging parameters are iteratively changed until the best pos…
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We demonstrate insights into the three-dimensional structure of defects in graphene, in particular grain boundaries, obtained via a new approach from two transmission electron microscopy images recorded at different angles. The structure is obtained through an optimization process where both the atomic positions as well as the simulated imaging parameters are iteratively changed until the best possible match to the experimental images is found. We first demonstrate that this method works using an embedded defect in graphene that allows direct comparison to the computationally predicted three-dimensional shape. We then applied the method to a set of grain boundary structures with misorientation angles nearly spanning the whole available range (2.6-29.8°). The measured height variations at the boundaries reveal a strong correlation with the misorientation angle with lower angles resulting in stronger corrugation and larger kink angles. Our results allow for the first time a direct comparison with theoretical predictions for the corrugation at grain boundaries and we show that the measured kink angles are significantly smaller than the largest predicted ones.
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Submitted 2 July, 2018;
originally announced July 2018.
