AC Current-Driven Magnetization Switching and Nonlinear Hall Rectification in a Magnetic Topological Insulator
Authors:
Yuto Kiyonaga,
Masataka Mogi,
Ryutaro Yoshimi,
Yukako Fujishiro,
Yuri Suzuki,
Max T. Birch,
Atsushi Tsukazaki,
Minoru Kawamura,
Masashi Kawasaki,
Yoshinori Tokura
Abstract:
Spin-orbit torque arising from the spin-orbit-coupled surface states of topological insulators enables current-induced control of magnetization with high efficiency. Here, alternating-current (AC) driven magnetization reversal is demonstrated in a semi-magnetic topological insulator (Cr,Bi,Sb)2Te3/(Bi,Sb)2Te3, facilitated by a low threshold current density of 1.5x10^9 A/m^2. Time-domain Hall volta…
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Spin-orbit torque arising from the spin-orbit-coupled surface states of topological insulators enables current-induced control of magnetization with high efficiency. Here, alternating-current (AC) driven magnetization reversal is demonstrated in a semi-magnetic topological insulator (Cr,Bi,Sb)2Te3/(Bi,Sb)2Te3, facilitated by a low threshold current density of 1.5x10^9 A/m^2. Time-domain Hall voltage measurements using an oscilloscope reveal a strongly nonlinear and nonreciprocal Hall response during the magnetization reversal process. Fourier analysis of the time-varying Hall voltage identifies higher-harmonic signals and a rectified direct-current (DC) component, highlighting the complex interplay among the applied current, external magnetic field, and magnetization dynamics. Furthermore, a hysteretic behavior in the current-voltage characteristics gives rise to frequency mixing under dual-frequency excitation. This effect, distinct from conventional polynomial-based nonlinearities, allows for selective extraction of specific frequency components. The results demonstrate that AC excitation can not only switch magnetization efficiently but also induce tunable nonlinear responses, offering a new pathway for multifunctional spintronic devices with potential applications in energy-efficient memory, signal processing, and frequency conversion.
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Submitted 14 April, 2025;
originally announced April 2025.
Discovery of transient topological crystalline order in optically driven SnSe
Authors:
Masataka Mogi,
Dongsung Choi,
Kyoung Hun Oh,
Diana Golovanova,
Yufei Zhao,
Yifan Su,
Zongqi Shen,
Doron Azoury,
Haoyu Xia,
Batyr Ilyas,
Tianchuang Luo,
Noriaki Kida,
Taito Osaka,
Tadashi Togashi,
Binghai Yan,
Nuh Gedik
Abstract:
Ultrafast optical excitation provides a powerful route for accessing emergent quantum phases far from equilibrium, enabling transient light-induced phenomena such as magnetism, ferroelectricity, and superconductivity. However, extending this approach to induce topological phases, especially in conventional semiconductors, remains challenging. Here, we report the observation of a thermally inaccess…
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Ultrafast optical excitation provides a powerful route for accessing emergent quantum phases far from equilibrium, enabling transient light-induced phenomena such as magnetism, ferroelectricity, and superconductivity. However, extending this approach to induce topological phases, especially in conventional semiconductors, remains challenging. Here, we report the observation of a thermally inaccessible, transient topological crystalline order in the layered semiconductor SnSe, a trivial insulator with a sizable (~ 0.8 eV) band gap, induced by femtosecond above-gap excitation. Time- and angle-resolved photoemission spectroscopy directly reveals the sub-picosecond emergence of Dirac-like linear dispersions within the band gap. Their features, including a high Fermi velocity (~ 2.5x10^5 m/s), multiple Dirac points away from high-symmetry momenta, and independence from probe photon energy, are consistent with mirror-symmetry-protected surface states of a topological crystalline insulator. The observed spectral dynamics, combined with density functional theory calculations, indicate that the femtosecond excitation transiently increases lattice symmetry, enabling topological crystalline order to emerge. Our discovery opens new avenues for ultrafast optical control of topological quantum phases in semiconductors, with potential applications in quantum and spintronic devices.
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Submitted 16 May, 2025; v1 submitted 20 February, 2025;
originally announced February 2025.
