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Raman Forbidden Layer-Breathing Modes in Layered Semiconductor Materials Activated by Phonon and Optical Cavity Effects
Authors:
Miao-Ling Lin,
Jiang-Bin Wu,
Xue-Lu Liu,
Tao Liu,
Rui Mei,
Heng Wu,
Shan Guan,
Jia-Liang Xie,
Jun-Wei Luo,
Lin-Wang Wang,
Andrea C. Ferrari,
Ping-Heng Tan
Abstract:
We report Raman forbidden layer-breathing modes (LBMs) in layered semiconductor materials (LSMs). The intensity distribution of all observed LBMs depends on layer number, incident light wavelength and refractive index mismatch between LSM and underlying substrate. These results are understood by a Raman scattering theory via the proposed spatial interference model, where the naturally occurring op…
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We report Raman forbidden layer-breathing modes (LBMs) in layered semiconductor materials (LSMs). The intensity distribution of all observed LBMs depends on layer number, incident light wavelength and refractive index mismatch between LSM and underlying substrate. These results are understood by a Raman scattering theory via the proposed spatial interference model, where the naturally occurring optical and phonon cavities in LSMs enable spatially coherent photon-phonon coupling mediated by the corresponding one-dimensional periodic electronic states. Our work reveals the spatial coherence of photon and phonon fields on the phonon excitation via photon/phonon cavity engineering.
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Submitted 7 March, 2025;
originally announced March 2025.
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Tuning the Interlayer Microstructure and Residual Stress of Buffer-Free Direct Bonding GaN/Si Heterostructures
Authors:
Yan Zhou,
Shi Zhou,
Shun Wan,
Bo Zou,
Yuxia Feng,
Rui Mei,
Heng Wu,
Pingheng Tan,
Naoteru Shigekawa,
Jianbo Liang,
Martin Kuball
Abstract:
The direct integration of GaN with Si can boost great potential for low-cost, large-scale, and high-power device applications. However, it is still challengeable to directly grow GaN on Si without using thick strain relief buffer layers due to their large lattice and thermal-expansion-coefficient mismatches. In this work, a GaN/Si heterointerface without any buffer layer is successfully fabricated…
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The direct integration of GaN with Si can boost great potential for low-cost, large-scale, and high-power device applications. However, it is still challengeable to directly grow GaN on Si without using thick strain relief buffer layers due to their large lattice and thermal-expansion-coefficient mismatches. In this work, a GaN/Si heterointerface without any buffer layer is successfully fabricated at room temperature via surface activated bonding (SAB). The residual stress states and interfacial microstructures of GaN/Si heterostructures were systematically investigated through micro-Raman spectroscopy and transmission electron microscopy. Compared to the large compressive stress that existed in GaN layers grown-on-Si by MOCVD, a significantly relaxed and uniform small tensile stress was observed in GaN layers bonded-to-Si by SAB; this is mainly ascribed to the amorphous layer formed at the bonding interface. In addition, the interfacial microstructure and stress states of bonded GaN/Si heterointerfaces was found can be significantly tuned by appropriate thermal annealing. This work moves an important step forward directly integrating GaN to the present Si CMOS technology with high quality thin interfaces, and brings great promises for wafer-scale low-cost fabrication of GaN electronics.
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Submitted 2 February, 2023;
originally announced February 2023.
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Monte Carlo Study of Temperature-dependent Non-diffusive Thermal Transport in Si Nanowires
Authors:
Lei Ma,
Riguo Mei,
Mengmeng Liu,
Xuxin Zhao,
Qixing Wu,
Hongyuan Sun
Abstract:
Non-diffusive thermal transport has gained extensive research interest recently due to its important implications on fundamental understanding of material phonon mean free path distributions and many nanoscale energy applications. In this work, we systematically investigate the role of boundary scattering and nanowire length on the nondiffusive thermal transport in thin silicon nanowires by rigoro…
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Non-diffusive thermal transport has gained extensive research interest recently due to its important implications on fundamental understanding of material phonon mean free path distributions and many nanoscale energy applications. In this work, we systematically investigate the role of boundary scattering and nanowire length on the nondiffusive thermal transport in thin silicon nanowires by rigorously solving the phonon Boltzmann transport equation using a variance reduced Monte Carlo technique across a range of temperatures. The simulations use the complete phonon dispersion and spectral lifetime data obtained from first-principle density function theory calculations as input without any adjustable parameters. Our BTE simulation results show that the nanowire length plays an important role in determining the thermal conductivity of silicon nanowires. In addition, our simulation results suggest significant phonon confinement effect for the previously measured silicon nanowires. These findings are important for a comprehensive understanding of microscopic non-diffusive thermal transport in silicon nanowires.
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Submitted 1 January, 2017; v1 submitted 17 September, 2016;
originally announced September 2016.
