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An Algorithm for Subtraction of Doublet Emission Lines in Angle-Resolved Photoemission Spectroscopy
Authors:
Yaoju Tarn,
Mekhola Sinha,
Christopher Pasco,
Darrell G. Schlom,
Tyrel M. McQueen,
Kyle M. Shen,
Brendan D. Faeth
Abstract:
Plasma discharge lamps are widely utilized in the practice of angle-resolved photoemission spectroscopy (ARPES) experiments as narrow-linewidth ultraviolet photon sources. However, many emission lines such as Ar-I, Ne-I, and Ne-II have closely spaced doublet emission lines, which result in superimposed replica on the measured ARPES spectra. Here, we present a simple method for subtracting the cont…
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Plasma discharge lamps are widely utilized in the practice of angle-resolved photoemission spectroscopy (ARPES) experiments as narrow-linewidth ultraviolet photon sources. However, many emission lines such as Ar-I, Ne-I, and Ne-II have closely spaced doublet emission lines, which result in superimposed replica on the measured ARPES spectra. Here, we present a simple method for subtracting the contribution of these doublet emission lines from photoemission spectra. Benchmarking against ARPES spectra of well-characterized 2D materials, we demonstrate that this algorithm manages to subtract the doublet signal and reproduce the key features of the monochromated He-I$α$ spectra in a physically sound manner that reliably reproduces quantifiable dispersion relations and quasiparticle lifetimes.
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Submitted 13 March, 2023;
originally announced March 2023.
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Anomalous thickness-dependent electrical conductivity in van der Waals layered transition metal halide, Nb_3Cl_8
Authors:
Jiho Yoon,
Edouard Lesne,
Kornelia Sklarek,
John Sheckelton,
Chris Pasco,
Stuart S. P. Parkin,
Tyrel M. McQueen,
Mazhar N. Ali
Abstract:
Understanding the electronic transport properties of layered, van der Waals transition metal halides (TMHs) and chalcogenides is a highly active research topic today. Of particular interest is the evolution of those properties with changing thickness as the 2D limit is approached. Here, we present the electrical conductivity of exfoliated single crystals of the TMH, cluster magnet, Nb3Cl8, over a…
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Understanding the electronic transport properties of layered, van der Waals transition metal halides (TMHs) and chalcogenides is a highly active research topic today. Of particular interest is the evolution of those properties with changing thickness as the 2D limit is approached. Here, we present the electrical conductivity of exfoliated single crystals of the TMH, cluster magnet, Nb3Cl8, over a wide range of thicknesses both with and without hexagonal boron nitride (hBN) encapsulation. The conductivity is found to increase by more than three orders of magnitude when the thickness is decreased from 280 μm to 5 nm, at 300 K. At low temperatures and below ~50 nm, the conductance becomes thickness independent, implying surface conduction is dominating. Temperature dependent conductivity measurements indicate Nb3Cl8 is an insulator, however the effective activation energy decreases from a bulk value of 310 meV to 140 meV by 5nm. X-ray photoelectron spectroscopy (XPS) shows mild surface oxidation in devices without hBN capping, however, no significant difference in transport is observed when compared to the capped devices, implying the thickness dependent transport behavior is intrinsic to the material. A conduction mechanism comprised of a higher conductivity surface channel in parallel with a lower conductivity interlayer channel is discussed.
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Submitted 13 November, 2019;
originally announced November 2019.
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Image registration of low signal-to-noise cryo-STEM data
Authors:
Benjamin H. Savitzky,
Ismail El Baggari,
Colin Clement,
Emily Waite,
John P. Sheckelton,
Christopher Pasco,
Alemayehu S. Admasu,
Jaewook Kim,
Sang-Wook Cheong,
Tyrel M. McQueen,
Robert Hovden,
Lena F. Kourkoutis
Abstract:
Combining multiple fast image acquisitions to mitigate scan noise and drift artifacts has proven essential for picometer precision, quantitative analysis of atomic resolution scanning transmission electron microscopy (STEM) data. For very low signal-to-noise ratio (SNR) image stacks - frequently required for undistorted imaging at liquid nitrogen temperatures - image registration is particularly d…
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Combining multiple fast image acquisitions to mitigate scan noise and drift artifacts has proven essential for picometer precision, quantitative analysis of atomic resolution scanning transmission electron microscopy (STEM) data. For very low signal-to-noise ratio (SNR) image stacks - frequently required for undistorted imaging at liquid nitrogen temperatures - image registration is particularly delicate, and standard approaches may either fail, or produce subtly specious reconstructed lattice images. We present an approach which effectively registers and averages image stacks which are challenging due to their low-SNR and propensity for unit cell misalignments. Registering all possible image pairs in a multi-image stack leads to significant information surplus. In combination with a simple physical picture of stage drift, this enables identification of incorrect image registrations, and determination of the optimal image shifts from the complete set of relative shifts. We demonstrate the effectiveness of our approach on experimental, cryogenic STEM datasets, highlighting subtle artifacts endemic to low-SNR lattice images and how they can be avoided. High-SNR average images with information transfer out to 0.72 A are achieved at 300 kV and with the sample cooled to near liquid nitrogen temperature.
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Submitted 23 October, 2017;
originally announced October 2017.
