Engineering quantum-coherent defects: the role of substrate miscut in chemical vapor deposition diamond growth
Authors:
Simon A. Meynell,
Claire A. McLellan,
Lillian B. Hughes,
Tom. E. Mates,
Kunal Mukherjee,
Ania C. Bleszynski Jayich
Abstract:
The engineering of defects in diamond, particularly nitrogen-vacancy (NV) centers, is important for many applications in quantum science. A materials science approach based on chemical vapor deposition (CVD) growth of diamond and in-situ nitrogen doping is a promising path toward tuning and optimizing the desired properties of the embedded defects. Herein, with the coherence of the embedded defect…
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The engineering of defects in diamond, particularly nitrogen-vacancy (NV) centers, is important for many applications in quantum science. A materials science approach based on chemical vapor deposition (CVD) growth of diamond and in-situ nitrogen doping is a promising path toward tuning and optimizing the desired properties of the embedded defects. Herein, with the coherence of the embedded defects in mind, we explore the effects of substrate miscut on the diamond growth rate, nitrogen density, and hillock defect density, and we report an optimal angle range between 0.66° < θ < 1.16° for the purposes of engineering coherent ensembles of NV centers in diamond. We provide a model that quantitatively describes hillock nucleation in the step-flow regime of CVD growth, shedding insight on the physics of hillock formation. We also report significantly enhanced incorporation of nitrogen at hillock defects, opening the possibility for templating hillock-defect-localized NV center ensembles for quantum applications.
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Submitted 12 May, 2020;
originally announced May 2020.
Deterministic coupling of delta-doped NV centers to a nanobeam photonic crystal cavity
Authors:
Jonathan C. Lee,
David O. Bracher,
Shanying Cui,
Kenichi Ohno,
Claire A. McLellan,
Xingyu Zhang,
Paolo Andrich,
Benjamin Aleman,
Kasey J. Russell,
Andrew P. Magyar,
Igor Aharonovich,
Ania Bleszynski Jayich,
David Awschalom,
Evelyn L. Hu
Abstract:
The negatively-charged nitrogen vacancy center (NV) in diamond has generated significant interest as a platform for quantum information processing and sensing in the solid state. For most applications, high quality optical cavities are required to enhance the NV zero-phonon line (ZPL) emission. An outstanding challenge in maximizing the degree of NV-cavity coupling is the deterministic placement o…
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The negatively-charged nitrogen vacancy center (NV) in diamond has generated significant interest as a platform for quantum information processing and sensing in the solid state. For most applications, high quality optical cavities are required to enhance the NV zero-phonon line (ZPL) emission. An outstanding challenge in maximizing the degree of NV-cavity coupling is the deterministic placement of NVs within the cavity. Here, we report photonic crystal nanobeam cavities coupled to NVs incorporated by a delta-doping technique that allows nanometer-scale vertical positioning of the emitters. We demonstrate cavities with Q up to ~24,000 and mode volume V ~ $0.47(λ/n)^{3}$ as well as resonant enhancement of the ZPL of an NV ensemble with Purcell factor of ~20. Our fabrication technique provides a first step towards deterministic NV-cavity coupling using spatial control of the emitters.
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Submitted 3 November, 2014;
originally announced November 2014.
