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Spatially Resolved High Voltage Kelvin Probe Force Microcopy: A Novel Avenue for Examining Electrical Phenomena at Nanoscale
Authors:
Conor J. McCluskey,
Niyorjyoti Sharma,
Jesi R. Maguire,
Serene Pauly,
Andrew Rogers,
TJ Lindsay,
Kristina M. Holsgrove,
Brian J. Rodriguez,
Navneet Soin,
John Marty Gregg,
Raymond G. P. McQuaid,
Amit Kumar
Abstract:
Kelvin probe microscopy (KPFM) is a well-established scanning probe technique, used to measure surface potential accurately; it has found extensive use in the study of a range of materials phenomena. In its conventional form, KPFM frustratingly precludes imaging samples or scenarios where large surface potential exists or large surface potential gradients are created outside the typical +/-10V win…
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Kelvin probe microscopy (KPFM) is a well-established scanning probe technique, used to measure surface potential accurately; it has found extensive use in the study of a range of materials phenomena. In its conventional form, KPFM frustratingly precludes imaging samples or scenarios where large surface potential exists or large surface potential gradients are created outside the typical +/-10V window. If the potential regime measurable via KPFM could be expanded, to enable precise and reliable metrology, through a high voltage KPFM (HV-KPFM) adaptation, it could open up pathways towards a range of novel experiments, where the detection limit of regular KPFM has so far prevented the use of the technique. In this work, HV-KPFM has been realised and shown to be capable of measuring large surface potential and potential gradients with accuracy and precision. The technique has been employed to study a range of materials (positive temperature coefficient of resistivity ceramics, charge storage fluoropolymers and pyroelectrics) where accurate spatially resolved mapping of surface potential within high voltage regime facilitates novel physical insight. The results demonstrate that HV-KPFM can be used as an effective tool to fill in existing gaps in surface potential measurements while also opening routes for novel studies in materials physics.
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Submitted 25 January, 2024;
originally announced January 2024.
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R2D2 -- An equivalent-circuit model that quantitatively describes domain wall conductivity in ferroelectric LiNbO$_3$
Authors:
Manuel Zahn,
Elke Beyreuther,
Iuliia Kiseleva,
Ahmed Samir Lotfy,
Conor J. McCluskey,
Jesi R. Maguire,
Ahmet Suna,
Michael Rüsing,
J. Marty Gregg,
Lukas M. Eng
Abstract:
Ferroelectric domain wall (DW) conductivity (DWC) can be attributed to two separate mechanisms: (a) the injection/ejection of charge carriers across the Schottky barrier formed at the (metal-) electrode-DW junction and (b) the transport of those charge carriers along the DW. Current-voltage (IU) characteristics, recorded at variable temperatures from LiNbO$_3$ (LNO) DWs, are clearly able to differ…
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Ferroelectric domain wall (DW) conductivity (DWC) can be attributed to two separate mechanisms: (a) the injection/ejection of charge carriers across the Schottky barrier formed at the (metal-) electrode-DW junction and (b) the transport of those charge carriers along the DW. Current-voltage (IU) characteristics, recorded at variable temperatures from LiNbO$_3$ (LNO) DWs, are clearly able to differentiate between these two contributions. Practically, they allow us here to directly quantify the physical parameters relevant for the two mechanisms (a) and (b) mentioned above. These are, e.g., the resistance of the DW, the saturation current, the ideality factor, and the Schottky barrier height of the electrode/DW junction. Furthermore, the activation energies needed to initiate the thermally-activated electronic transport along the DWs, can be extracted. In addition, we show that electronic transport along LiNbO$_3$ DWs can be elegantly viewed and interpreted in an adapted semiconductor picture based on a double-diode/double-resistor equivalent circuit model, the R2D2 model. Finally, our R2D2 model was checked for its universality by fitting the DWC data not only to z-cut LNO bulk DWs, but equally to z-cut thin-film LNO DWs, and DWC from x-cut DWs as reported in literature.
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Submitted 19 November, 2023; v1 submitted 19 July, 2023;
originally announced July 2023.
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Ferroelectric Domain Wall Logic Gates
Authors:
Ahmet Suna,
Conor J. McCluskey,
Jesi R. Maguire,
Amit Kumar,
Raymond G. P. McQuaid,
J. Marty Gregg
Abstract:
Fundamentally, lithium niobate is an extremely good electrical insulator. However, this can change dramatically when 180° domain walls are present, as they are often found to be strongly conducting. Absolute conductivities depend on the inclination angles of the walls with respect to the [001] polarisation axis and so, if these inclination angles can be altered, then electrical conductivities can…
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Fundamentally, lithium niobate is an extremely good electrical insulator. However, this can change dramatically when 180° domain walls are present, as they are often found to be strongly conducting. Absolute conductivities depend on the inclination angles of the walls with respect to the [001] polarisation axis and so, if these inclination angles can be altered, then electrical conductivities can be tuned, or even toggled on and off. In 500nm thick z-cut ion-sliced thin films, localised wall angle variations can be controlled by both the sense and magnitude of applied electrical bias. We show that this results in a diode-like charge transport response which is effective for half-wave rectification, albeit only at relatively low ac frequencies. Most importantly, however, we also demonstrate that such domain wall diodes can be used to construct "AND" and inclusive "OR" logic gates, where "0" and "1" output states are clearly distinguishable. Realistic device modelling allows an extrapolation of results for the operation of these domain wall diodes in more complex arrangements and, although non-ideal, output states can still be distinguished even in two-level cascade logic. Although conceptually simple, we believe that our experimental demonstration of operational domain wall-enabled logic gates represents a significant step towards the future broader realisation of "domain wall nanoelectronics".
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Submitted 16 September, 2022;
originally announced September 2022.
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Non-invasive characterisation of a laser-driven positron beam
Authors:
Aaron Alejo,
Guillermo Marrero Samarin,
Richard Warwick,
Connor McCluskey,
Giada Cantono,
Tiberio Ceccotti,
Sandrine Dosbosz Dufrenoy,
Pascal Monot,
Gianluca Sarri
Abstract:
We report on an indirect and non-invasive method to simultaneously characterise the energy-dependent emittance and source size of ultra-relativistic positron beams generated during the propagation of a laser-wakefield accelerated electron beam through a high-Z converter target. The strong correlation of the geometrical emittance of the positrons with that of the scattered electrons allows the form…
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We report on an indirect and non-invasive method to simultaneously characterise the energy-dependent emittance and source size of ultra-relativistic positron beams generated during the propagation of a laser-wakefield accelerated electron beam through a high-Z converter target. The strong correlation of the geometrical emittance of the positrons with that of the scattered electrons allows the former to be inferred, with high accuracy, from monitoring the latter. The technique has been tested in a proof-of-principle experiment where, for 100 MeV positrons, we infer geometrical emittances and source sizes of the order of $ε_{e^+} \approx$ 3 $μ$m and $D_{e^+} \approx$ 150 $μ$m, respectively. This is consistent with the numerically predicted possibility of achieving sub-$μ$m geometrical emittances and micron-scale source sizes at the GeV level.
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Submitted 23 February, 2020;
originally announced February 2020.
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A bare-bones mathematical model of radicalization
Authors:
Connell McCluskey,
Manuele Santoprete
Abstract:
Radicalization is the process by which people come to adopt increasingly extreme political or religious ideologies. While radical thinking is by no means problematic in itself, it becomes a threat to national security when it leads to violence. We introduce a simple compartmental model (similar to epidemiology models) to describe the radicalization process. We then extend the model to allow for mu…
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Radicalization is the process by which people come to adopt increasingly extreme political or religious ideologies. While radical thinking is by no means problematic in itself, it becomes a threat to national security when it leads to violence. We introduce a simple compartmental model (similar to epidemiology models) to describe the radicalization process. We then extend the model to allow for multiple ideologies. Our approach is similar to the one used in the study of multi-strain diseases. Based on our models, we assess several strategies to counter violent extremism.
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Submitted 8 November, 2017;
originally announced November 2017.
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Raman observations of quantum interference in the $ν_1 / 2ν_2$ Fermi dyad region of carbon dioxide
Authors:
Craig W. McCluskey,
David S. Stoker
Abstract:
Coherent anti-Stokes Raman spectra (CARS) were obtained for CO$_2$ in a positive column discharge. The intensities of the Raman transitions to the $ν_1 / 2ν_2$ Fermi dyad decrease significantly when the discharge is turned on because of equalization of the lower and upper state populations by electron impact excitation, in a manner similar to saturation. The strength of the 1285 cm$^{-1}$ transi…
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Coherent anti-Stokes Raman spectra (CARS) were obtained for CO$_2$ in a positive column discharge. The intensities of the Raman transitions to the $ν_1 / 2ν_2$ Fermi dyad decrease significantly when the discharge is turned on because of equalization of the lower and upper state populations by electron impact excitation, in a manner similar to saturation. The strength of the 1285 cm$^{-1}$ transition is observed to decrease by a factor of 20 greater than the 1388 cm$^{-1}$ line due to a quantum interference decreasing the vibrational relaxation rate of the upper state of the 1285 cm$^{-1}$ transition. This interference is verified by measurements of the decay rates from the state. Experiments ruling out Stark effects and polarization effects are described. Supporting the observed rapid vibrational excitation by electrons, a strong hot band transition $20^00 \leftarrow 02^20$ at 1425.61 cm$^{-1}$ was observed. These observations are compared with recent measurements of the Raman spectra of CO$_2$ heated in a flame.
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Submitted 24 January, 2006;
originally announced January 2006.
