-
Thermal stress modelling of diamond on GaN/III-Nitride membranes
Authors:
Jerome A. Cuenca,
Matthew D. Smith,
Daniel E. Field,
Fabien C-P. Massabuau,
Soumen Mandal,
James Pomeroy,
David J. Wallis,
Rachel A. Oliver,
Iain Thayne,
Martin Kuball,
Oliver A. Williams
Abstract:
Diamond heat-spreaders for gallium nitride (GaN) devices currently depend upon a robust wafer bonding process. Bonding-free membrane methods demonstrate potential, however, chemical vapour deposition (CVD) of diamond directly onto a III-nitride (III-N) heterostructure membrane induces significant thermal stresses. In this work, these thermal stresses are investigated using an analytical approach,…
▽ More
Diamond heat-spreaders for gallium nitride (GaN) devices currently depend upon a robust wafer bonding process. Bonding-free membrane methods demonstrate potential, however, chemical vapour deposition (CVD) of diamond directly onto a III-nitride (III-N) heterostructure membrane induces significant thermal stresses. In this work, these thermal stresses are investigated using an analytical approach, a numerical model and experimental validation. The thermal stresses are caused by the mismatch in the coefficient of thermal expansion (CTE) between the GaN/III-N stack, silicon (Si) and the diamond from room temperature to CVD growth temperatures. Simplified analytical wafer bow models underestimate the membrane bow for small sizes while numerical models replicate the stresses and bows with increased accuracy using temperature gradients. The largest tensile stress measured using Raman spectroscopy at room temperature was approximately 1.0 $\pm0.2$ GPa while surface profilometry shows membrane bows as large as \SI{58}{\micro\metre}. This large bow is caused by additional stresses from the Si frame in the initial heating phase which are held in place by the diamond and highlights challenges for any device fabrication using contact lithography. However, the bow can be reduced if the membrane is pre-stressed to become flat at CVD temperatures. In this way, a sufficient platform to grow diamond on GaN/III-N structures without wafer bonding can be realised.
△ Less
Submitted 18 February, 2021;
originally announced February 2021.
-
Ti alloyed $α$-Ga$_2$O$_3$: route towards wide band gap engineering
Authors:
A. Barthel,
J. W. Roberts,
M. Napari,
T. N. Huq,
A. Kovács,
R. A. Oliver,
P. R. Chalker,
T. Sajavaara,
F. C-P. Massabuau
Abstract:
The suitability of Ti as a band gap modifier for $α$-Ga$_2$O$_3$ was investigated, taking advantage of the isostructural α-phases and high band gap difference between Ti$_2$O$_3$ and Ga$_2$O$_3$. Films of Ti:Ga$_2$O$_3$, with a range of Ti concentrations, synthesized by atomic layer deposition on sapphire substrates, were characterized to determine how crystallinity and band gap vary with composit…
▽ More
The suitability of Ti as a band gap modifier for $α$-Ga$_2$O$_3$ was investigated, taking advantage of the isostructural α-phases and high band gap difference between Ti$_2$O$_3$ and Ga$_2$O$_3$. Films of Ti:Ga$_2$O$_3$, with a range of Ti concentrations, synthesized by atomic layer deposition on sapphire substrates, were characterized to determine how crystallinity and band gap vary with composition for this alloy. The deposition of crystalline $α$-(Ti$_x$Ga$_{1-x}$)$_2$O$_3$ films with up to x~5.3%, was demonstrated. At greater Ti concentration, the films became amorphous. Modification of the band gap over a range of ~ 270 meV was achieved across the crystalline films and a maximum change in band gap from pure $α$-Ga$_2$O$_3$ of ~1.1 eV was observed for the films of greatest Ti fraction (61% Ti relative to Ga). The ability to maintain a crystalline phase at low fractions of Ti, accompanied by a significant modification in band gap shows promise for band gap engineering and the enhancement in versatility of application of $α$-Ga$_2$O$_3$ in optoelectronic devices.
△ Less
Submitted 2 June, 2020;
originally announced June 2020.
-
Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition
Authors:
J. W. Roberts,
P. R. Chalker,
B. Ding,
R. A. Oliver,
J. T. Gibbon,
L. A. H. Jones,
V. R. Dhanak,
L. J. Phillips,
J. D. Major,
F. C-P. Massabuau
Abstract:
Plasma enhanced atomic layer deposition was used to deposit thin films of Ga2O3 on to c-plane sapphire substrates using triethylgallium and O2 plasma. The influence of substrate temperature and plasma processing parameters on the resultant crystallinity and optical properties of the Ga2O3 films were investigated. The deposition temperature was found to have a significant effect on the film crystal…
▽ More
Plasma enhanced atomic layer deposition was used to deposit thin films of Ga2O3 on to c-plane sapphire substrates using triethylgallium and O2 plasma. The influence of substrate temperature and plasma processing parameters on the resultant crystallinity and optical properties of the Ga2O3 films were investigated. The deposition temperature was found to have a significant effect on the film crystallinity. At temperatures below 200°C amorphous Ga2O3 films were deposited. Between 250°C and 350°C the films became predominantly α-Ga2O3. Above 350°C the deposited films showed a mixture of α-Ga2O3 and ε-Ga2O3 phases. Plasma power and O2 flow rate were observed to have less influence over the resultant phases present in the films. However, both parameters could be tuned to alter the strain of the film. Ultraviolet transmittance measurements on the Ga2O3 films showed that the bandgaps ranges from 5.0 eV to 5.2 eV with the largest bandgap of 5.2 eV occurring for the α-Ga2O3 phase deposited at 250°C.
△ Less
Submitted 19 August, 2019;
originally announced August 2019.
