Machine-learning based high-bandwidth magnetic sensing
Authors:
Galya Haim,
Stefano Martina,
John Howell,
Nir Bar-Gill,
Filippo Caruso
Abstract:
Recent years have seen significant growth of quantum technologies, and specifically quantum sensing, both in terms of the capabilities of advanced platforms and their applications. One of the leading platforms in this context is nitrogen-vacancy (NV) color centers in diamond, providing versatile, high-sensitivity, and high-resolution magnetic sensing. Nevertheless, current schemes for spin resonan…
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Recent years have seen significant growth of quantum technologies, and specifically quantum sensing, both in terms of the capabilities of advanced platforms and their applications. One of the leading platforms in this context is nitrogen-vacancy (NV) color centers in diamond, providing versatile, high-sensitivity, and high-resolution magnetic sensing. Nevertheless, current schemes for spin resonance magnetic sensing (as applied by NV quantum sensing) suffer from tradeoffs associated with sensitivity, dynamic range, and bandwidth. Here we address this issue, and implement machine learning tools to enhance NV magnetic sensing in terms of the sensitivity/bandwidth tradeoff in large dynamic range scenarios. We experimentally demonstrate this new approach, reaching an improvement in the relevant figure of merit by a factor of up to 5. Our results promote quantum machine learning protocols for sensing applications towards more feasible and efficient quantum technologies.
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Submitted 19 September, 2024;
originally announced September 2024.
Trapping in irradiated p-on-n silicon sensors at fluences anticipated at the HL-LHC outer tracker
Authors:
W. Adam,
T. Bergauer,
M. Dragicevic,
M. Friedl,
R. Fruehwirth,
M. Hoch,
J. Hrubec,
M. Krammer,
W. Treberspurg,
W. Waltenberger,
S. Alderweireldt,
W. Beaumont,
X. Janssen,
S. Luyckx,
P. Van Mechelen,
N. Van Remortel,
A. Van Spilbeeck,
P. Barria,
C. Caillol,
B. Clerbaux,
G. De Lentdecker,
D. Dobur,
L. Favart,
A. Grebenyuk,
Th. Lenzi
, et al. (663 additional authors not shown)
Abstract:
The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 $μ$m thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to $3 \cdot 10^{15}$ neq/cm$^2$. Pulsed red laser light with a wavelength of 672 nm is used to generate electron-hole pairs in the sensors. The induced signals are used to determi…
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The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 $μ$m thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to $3 \cdot 10^{15}$ neq/cm$^2$. Pulsed red laser light with a wavelength of 672 nm is used to generate electron-hole pairs in the sensors. The induced signals are used to determine the charge collection efficiencies separately for electrons and holes drifting through the sensor. The effective trapping rates are extracted by comparing the results to simulation. The electric field is simulated using Synopsys device simulation assuming two effective defects. The generation and drift of charge carriers are simulated in an independent simulation based on PixelAV. The effective trapping rates are determined from the measured charge collection efficiencies and the simulated and measured time-resolved current pulses are compared. The effective trapping rates determined for both electrons and holes are about 50% smaller than those obtained using standard extrapolations of studies at low fluences and suggests an improved tracker performance over initial expectations.
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Submitted 7 May, 2015;
originally announced May 2015.
