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Characterization of external cross-talk from silicon photomultipliers in a liquid xenon detector
Authors:
D Gallacher,
A. de St. Croix,
S. Bron,
B. M. Rebeiro,
T. McElroy,
S. Al Kharusi,
T. Brunner,
C. Chambers,
B. Chana,
Z. Charlesworth,
E. Egan,
M. Francesconi,
L. Galli,
P. Giampa,
D. Goeldi,
S. Lavoie,
J. Lefebvre,
X. Li,
C. Malbrunot,
P. Margetak,
N. Massacret,
S. C. Nowicki,
H. Rasiwala,
K. Raymond,
F. Retière
, et al. (6 additional authors not shown)
Abstract:
The Light-only Liquid Xenon experiment (LoLX) employs a small-scale detector equipped with 96 Hamamatsu VUV4 silicon photomultipliers (SiPMs) submerged in 5 kg of liquid xenon (LXe) to perform characterization measurements of light production, transport and detection in xenon. In this work, we perform a novel measurement of the "external cross-talk" (ExCT) of SiPMs, where photons produced in the a…
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The Light-only Liquid Xenon experiment (LoLX) employs a small-scale detector equipped with 96 Hamamatsu VUV4 silicon photomultipliers (SiPMs) submerged in 5 kg of liquid xenon (LXe) to perform characterization measurements of light production, transport and detection in xenon. In this work, we perform a novel measurement of the "external cross-talk" (ExCT) of SiPMs, where photons produced in the avalanche process escape the device and produce correlated signals on other SiPMs. SiPMs are the photodetector technology of choice for next generation rare-event search experiments; understanding the sources and effects of correlated noise in SiPMs is critical for producing accurate estimates of detector performance and sensitivity projections. We measure the probability to observe ExCT through timing correlation of detected photons in low-light conditions within LoLX. Measurements of SiPM ExCT are highly detector dependent; thus the ExCT process is simulated and modelled using the Geant4 framework. Using the simulation, we determine the average transport and detection efficiency for ExCT photons within LoLX, a necessary input to extract the expected ExCT probability from the data. For an applied overvoltage of 4 V and 5 V, we measure a mean number of photons emitted into the LXe per avalanche of $0.5^{+0.3}_{-0.2}$ and $0.6^{+0.3}_{-0.2}$, respectively. Using an optical model to describe photon transmission through the SiPM surface, this corresponds to an estimated photon yield inside the bulk silicon of $20^{+11}_{-9}$ and $25^{+12}_{-9}$ photons per avalanche. The relative increase in intensity of SiPM ExCT emission between 4 V and 5 V is consistent with expectation for the linear increase of gain with respect to overvoltage.
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Submitted 21 February, 2025;
originally announced February 2025.
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Stimulated Secondary Emission of Single Photon Avalanche Diodes
Authors:
Kurtis Raymond,
Fabrice Retière,
Harry Lewis,
Andrea Capra,
Duncan McCarthy,
Austin de St Croix,
Giacomo Gallina,
Joe McLaughlin,
Juliette Martin,
Nicolas Massacret,
Paolo Agnes,
Ryan Underwood,
Seraphim Koulosousas,
Peter Margetak
Abstract:
Large-area next-generation physics experiments rely on using Silicon Photo-Multiplier (SiPM) devices to detect single photons, which trigger charge avalanches. The noise mechanism of external cross-talk occurs when secondary photons produced during a charge avalanche escape from an SiPM and trigger other devices within a detector system. This work presents measured spectra of the secondary photons…
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Large-area next-generation physics experiments rely on using Silicon Photo-Multiplier (SiPM) devices to detect single photons, which trigger charge avalanches. The noise mechanism of external cross-talk occurs when secondary photons produced during a charge avalanche escape from an SiPM and trigger other devices within a detector system. This work presents measured spectra of the secondary photons emitted from the Hamamatsu VUV4 and Fondazione Bruno Kessler VUV-HD3 SiPMs stimulated by laser light, near operational voltages. The work describes the Microscope for the Injection and Emission of Light (MIEL) setup, which is an experimental apparatus constructed for this purpose. Measurements have been performed at a range of over-voltage values and temperatures from 86~K to 293~K. The number of photons produced per avalanche at the source are calculated from the measured spectra and determined to be 40$\pm$9 and 61$\pm$11 photons produced per avalanche for the VUV4 and VUV-HD3 respectively at 4 volts over-voltage. No significant temperature dependence is observed within the measurement uncertainties. The overall number of photons emitted per avalanche from each SiPM device are also reported.
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Submitted 25 September, 2024; v1 submitted 14 February, 2024;
originally announced February 2024.
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Simulation Study of Photon-to-Digital Converter (PDC) Timing Specifications for LoLX Experiment
Authors:
Nguyen V. H. Viet,
Alaa Al Masri,
Masaharu Nomachi,
Marc-Andre Tétrault,
Soud Al Kharusi,
Thomas Brunner,
Christopher Chambers,
Bindiya Chana,
Austin de St. Croix,
Eamon Egan,
Marco Francesconi,
David Gallacher,
Luca Galli,
Pietro Giampa,
Damian Goeldi,
Jessee Lefebvre,
Chloe Malbrunot,
Peter Margetak,
Juliette Martin,
Thomas McElroy,
Mayur Patel,
Bernadette Rebeiro,
Fabrice Retiere,
El Mehdi Rtimi,
Lisa Rudolph
, et al. (2 additional authors not shown)
Abstract:
The Light only Liquid Xenon (LoLX) experiment is a prototype detector aimed to study liquid xenon (LXe) light properties and various photodetection technologies. LoLX is also aimed to quantify LXe's time resolution as a potential scintillator for 10~ps time-of-flight (TOF) PET. Another key goal of LoLX is to perform a time-based separation of Cerenkov and scintillation photons for new background r…
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The Light only Liquid Xenon (LoLX) experiment is a prototype detector aimed to study liquid xenon (LXe) light properties and various photodetection technologies. LoLX is also aimed to quantify LXe's time resolution as a potential scintillator for 10~ps time-of-flight (TOF) PET. Another key goal of LoLX is to perform a time-based separation of Cerenkov and scintillation photons for new background rejection methods in LXe experiments. To achieve this separation, LoLX is set to be equipped with photon-to-digital converters (PDCs), a photosensor type that provides a timestamp for each observed photon. To guide the PDC design, we explore requirements for time-based Cerenkov separation. We use a PDC simulator, whose input is the light information from the Geant4-based LoLX simulation model, and evaluate the separation quality against time-to-digital converter (TDC) parameters. Simulation results with TDC parameters offer possible configurations supporting a good separation. Compared with the current filter-based approach, simulations show Cerenkov separation level increases from 54% to 71% when using PDC and time-based separation. With the current photon time profile of LoLX simulation, the results also show 71% separation is achievable with just 4 TDCs per PDC. These simulation results will lead to a specification guide for the PDC as well as expected results to compare against future PDC-based experimental measurements. In the longer term, the overall LoLX results will assist large LXe-based experiments and motivate the assembly of a LXe-based TOF-PET demonstrator system.
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Submitted 27 February, 2025; v1 submitted 28 October, 2023;
originally announced October 2023.
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Performance of novel VUV-sensitive Silicon Photo-Multipliers for nEXO
Authors:
G. Gallina,
Y. Guan,
F. Retiere,
G. Cao,
A. Bolotnikov,
I. Kotov,
S. Rescia,
A. K. Soma,
T. Tsang,
L. Darroch,
T. Brunner,
J. Bolster,
J. R. Cohen,
T. Pinto Franco,
W. C. Gillis,
H. Peltz Smalley,
S. Thibado,
A. Pocar,
A. Bhat,
A. Jamil,
D. C. Moore,
G. Adhikari,
S. Al Kharusi,
E. Angelico,
I. J. Arnquist
, et al. (140 additional authors not shown)
Abstract:
Liquid xenon time projection chambers are promising detectors to search for neutrinoless double beta decay (0$νββ$), due to their response uniformity, monolithic sensitive volume, scalability to large target masses, and suitability for extremely low background operations. The nEXO collaboration has designed a tonne-scale time projection chamber that aims to search for 0$νββ$ of \ce{^{136}Xe} with…
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Liquid xenon time projection chambers are promising detectors to search for neutrinoless double beta decay (0$νββ$), due to their response uniformity, monolithic sensitive volume, scalability to large target masses, and suitability for extremely low background operations. The nEXO collaboration has designed a tonne-scale time projection chamber that aims to search for 0$νββ$ of \ce{^{136}Xe} with projected half-life sensitivity of $1.35\times 10^{28}$~yr. To reach this sensitivity, the design goal for nEXO is $\leq$1\% energy resolution at the decay $Q$-value ($2458.07\pm 0.31$~keV). Reaching this resolution requires the efficient collection of both the ionization and scintillation produced in the detector. The nEXO design employs Silicon Photo-Multipliers (SiPMs) to detect the vacuum ultra-violet, 175 nm scintillation light of liquid xenon. This paper reports on the characterization of the newest vacuum ultra-violet sensitive Fondazione Bruno Kessler VUVHD3 SiPMs specifically designed for nEXO, as well as new measurements on new test samples of previously characterised Hamamatsu VUV4 Multi Pixel Photon Counters (MPPCs). Various SiPM and MPPC parameters, such as dark noise, gain, direct crosstalk, correlated avalanches and photon detection efficiency were measured as a function of the applied over voltage and wavelength at liquid xenon temperature (163~K). The results from this study are used to provide updated estimates of the achievable energy resolution at the decay $Q$-value for the nEXO design.
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Submitted 25 November, 2022; v1 submitted 16 September, 2022;
originally announced September 2022.
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Characterisation of SiPM Photon Emission in the Dark
Authors:
J. B. McLaughlin,
G. Gallina,
F. Retière,
A. De St. Croix,
P. Giampa,
M. Mahtab,
P. Margetak,
L. Martin,
N. Massacret,
J. Monroe,
M. Patel,
K. Raymond,
J. Roiseux,
L. Xie,
G. Zhang
Abstract:
In this paper, we report on the photon emission of Silicon Photomultipliers (SiPMs) from avalanche pulses generated in dark condition, with the main objective of better understanding the associated systematics for next-generation, large area, SiPM-based physics experiments. A new apparatus for spectral and imaging analysis was developed at TRIUMF and used to measure the light emitted by the two Si…
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In this paper, we report on the photon emission of Silicon Photomultipliers (SiPMs) from avalanche pulses generated in dark condition, with the main objective of better understanding the associated systematics for next-generation, large area, SiPM-based physics experiments. A new apparatus for spectral and imaging analysis was developed at TRIUMF and used to measure the light emitted by the two SiPMs considered as photo-sensor candidates for the nEXO neutrinoless double-beta decay experiment: one Fondazione Bruno Kessler (FBK) VUV-HD Low Field (LF) Low After Pulse (Low AP) (VUV-HD3) SiPM, and one Hamamatsu Photonics K.K. (HPK) VUV4 Multi-Pixel Photon Counter (MPPC). Spectral measurements of their light emission were taken with varying over-voltage in the wavelength range of 450--1020\,nm. For the FBK VUV-HD3, at an over-voltage of $12.1\pm1.0$\,V, we measure a secondary photon yield (number of photons ($γ$) emitted per charge carrier ($e^{-}$)) of $(4.04\pm0.02)\times 10^{-6}$ $γ/e^{-}$. The emission spectrum of the FBK VUV-HD3 contains an interference pattern consistent with thin-film interference. Additionally, emission microscopy images (EMMIs) of the FBK VUV-HD3 show a small number of highly localized regions with increased light intensity (hotspots) randomly distributed over the SiPM surface area. For the HPK VUV4 MPPC, at an over-voltage of $10.7\pm1.0$\,V, we measure a secondary photon yield of $(8.71\pm0.04)\times 10^{-6}$ $γ/e^{-}$. In contrast to the FBK VUV-HD3, the emission spectra of the HPK VUV4 don't show an interference pattern -- most likely due to a thinner surface coating. EMMIs of the HPK VUV4 also reveal a larger number of hotspots compared to the FBK VUV-HD3, especially in one of the corners of the device.
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Submitted 16 August, 2021; v1 submitted 29 July, 2021;
originally announced July 2021.
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Mechanical Ventilator Milano (MVM): A Novel Mechanical Ventilator Designed for Mass Scale Production in Response to the COVID-19 Pandemic
Authors:
C. Galbiati,
A. Abba,
P. Agnes,
P. Amaudruz,
M. Arba,
F. Ardellier-Desages,
C. Badia,
G. Batignani,
G. Bellani,
G. Bianchi,
D. Bishop,
V. Bocci,
W. Bonivento,
B. Bottino,
M. Bouchard,
S. Brice,
G. Buccino,
S. Bussino,
A. Caminata,
A. Capra,
M. Caravati,
M. Carlini,
L. Carrozzi,
J. M. Cela,
B. Celano
, et al. (123 additional authors not shown)
Abstract:
Presented here is the design of the Mechanical Ventilator Milano (MVM), a novel mechanical ventilator designed for rapid mass production in response to the COVID-19 pandemic to address the urgent shortage of intensive therapy ventilators in many countries, and the growing difficulty in procuring these devices through normal supply chains across borders. This ventilator is an electro-mechanical equ…
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Presented here is the design of the Mechanical Ventilator Milano (MVM), a novel mechanical ventilator designed for rapid mass production in response to the COVID-19 pandemic to address the urgent shortage of intensive therapy ventilators in many countries, and the growing difficulty in procuring these devices through normal supply chains across borders. This ventilator is an electro-mechanical equivalent of the old and reliable Manley Ventilator, and is able to operate in both pressure-controlled and pressure-supported ventilation modes. MVM is optimized for the COVID-19 emergency, thanks to the collaboration with medical doctors in the front line. MVM is designed for large-scale production in a short amount of time and at a limited cost, as it relays on off-the-shelf components, readily available worldwide. Operation of the MVM requires only a source of compressed oxygen (or compressed medical air) and electrical power. Initial tests of a prototype device with a breathing simulator are also presented. Further tests and developments are underway. At this stage the MVM is not yet a certified medical device but certification is in progress.
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Submitted 10 April, 2020; v1 submitted 23 March, 2020;
originally announced March 2020.
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Characterization of SiPM Avalanche Triggering Probabilities
Authors:
G. Gallina,
F. Retiere,
P. Giampa,
J. Kroeger,
P. Margetak,
S. Byrne Mamahit,
A. De St. Croix,
F. Edaltafar,
N. Massacret,
M. Ward,
G. Zhang
Abstract:
Silicon Photo-Multipliers (SiPMs) are detectors sensitive to single photons that are used to detect scintillation and Cherenkov light in a variety of physics and medical-imaging applications. SiPMs measure single photons by amplifying the photo-generated carriers (electrons or holes) via a Geiger-mode avalanche. The Photon Detection Efficiency (PDE) is the combined probability that a photon is abs…
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Silicon Photo-Multipliers (SiPMs) are detectors sensitive to single photons that are used to detect scintillation and Cherenkov light in a variety of physics and medical-imaging applications. SiPMs measure single photons by amplifying the photo-generated carriers (electrons or holes) via a Geiger-mode avalanche. The Photon Detection Efficiency (PDE) is the combined probability that a photon is absorbed in the active volume of the device with a subsequently triggered avalanche. Absorption and avalanche triggering probabilities are correlated since the latter probability depends on where the photon is absorbed. In this paper, we introduce a physics motivated parameterization of the avalanche triggering probability that describes the PDE of a SiPM as a function of its reverse bias voltage, at different wavelengths. This parameterization is based on the fact that in p-on-n SiPMs the induced avalanches are electron-driven in the ultra-violet and near-ultra-violet ranges, while they become increasingly hole-driven towards the near-infra-red range. The model has been successfully applied to characterize two Hamamatsu MPPCs and one FBK SiPM, and it can be extended to other SiPMs. Furthermore, this model provides key insight on the electric field structure within SiPMs, which can explain the limitation of existing devices and be used to optimize the performance of future SiPMs.
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Submitted 11 April, 2019;
originally announced April 2019.
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Characterization of the Hamamatsu VUV4 MPPCs for nEXO
Authors:
G. Gallina,
P. Giampa,
F. Retiere,
J. Kroeger,
G. Zhang,
M. Ward,
P. Margetak,
G. Lic,
T. Tsang,
L. Doria,
S. Al Kharusi,
M. Alfaris,
G. Anton,
I. J. Arnquist,
I. Badhrees,
P. S. Barbeau,
D. Beck,
V. Belov,
T. Bhatta,
J. Blatchford,
J. P. Brodsky,
E. Brown,
T. Brunner,
G. F. Cao,
L. Cao
, et al. (126 additional authors not shown)
Abstract:
In this paper we report on the characterization of the Hamamatsu VUV4 (S/N: S13370-6152) Vacuum Ultra-Violet (VUV) sensitive Silicon Photo-Multipliers (SiPMs) as part of the development of a solution for the detection of liquid xenon scintillation light for the nEXO experiment. Various SiPM features, such as: dark noise, gain, correlated avalanches, direct crosstalk and Photon Detection Efficiency…
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In this paper we report on the characterization of the Hamamatsu VUV4 (S/N: S13370-6152) Vacuum Ultra-Violet (VUV) sensitive Silicon Photo-Multipliers (SiPMs) as part of the development of a solution for the detection of liquid xenon scintillation light for the nEXO experiment. Various SiPM features, such as: dark noise, gain, correlated avalanches, direct crosstalk and Photon Detection Efficiency (PDE) were measured in a dedicated setup at TRIUMF. SiPMs were characterized in the range $163 \text{ } \text{K} \leq \text{T}\leq 233 \text{ } \text{K}$. At an over voltage of $3.1\pm0.2$ V and at $\text{T}=163 \text{ }\text{K}$ we report a number of Correlated Avalanches (CAs) per pulse in the $1 \upmu\text{s}$ interval following the trigger pulse of $0.161\pm0.005$. At the same settings the Dark-Noise (DN) rate is $0.137\pm0.002 \text{ Hz/mm}^{2}$. Both the number of CAs and the DN rate are within nEXO specifications. The PDE of the Hamamatsu VUV4 was measured for two different devices at $\text{T}=233 \text{ }\text{K}$ for a mean wavelength of $189\pm7\text{ nm}$. At $3.6\pm0.2$ V and $3.5\pm0.2$ V of over voltage we report a PDE of $13.4\pm2.6\text{ }\%$ and $11\pm2\%$, corresponding to a saturation PDE of $14.8\pm2.8\text{ }\%$ and $12.2\pm2.3\%$, respectively. Both values are well below the $24\text{ }\%$ saturation PDE advertised by Hamamatsu. More generally, the second device tested at $3.5\pm0.2$ V of over voltage is below the nEXO PDE requirement. The first one instead yields a PDE that is marginally close to meeting the nEXO specifications. This suggests that with modest improvements the Hamamatsu VUV4 MPPCs could be considered as an alternative to the FBK-LF SiPMs for the final design of the nEXO detector.
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Submitted 7 June, 2019; v1 submitted 8 March, 2019;
originally announced March 2019.
