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Enhancing Radiation Hardness and Granularity in HV-CMOS: The RD50-MPW4 Sensor
Authors:
B. Pilsl,
T. Bergauer,
R. Casanova,
H. Handerkas,
C. Irmler,
U. Kraemer,
R. Marco-Hernandez,
J. Mazorra de Cos,
F. R. Palomo,
S. Portschy,
S. Powell,
P. Sieberer,
J. Sonneveld,
H. Steininger,
E. Vilella,
B. Wade,
C. Zhang,
S. Zhang
Abstract:
The latest HV-CMOS pixel sensor developed by the former CERN-RD50-CMOS group, known as the \mpw, demonstrates competitive radiation tolerance, spatial granularity, and timing resolution -- key requirements for future high-energy physics experiments such as the HL-LHC and FCC. Fabricated using a \SI{150}{nm} CMOS process by \emph{LFoundry}, it introduces several improvements over its predecessor, t…
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The latest HV-CMOS pixel sensor developed by the former CERN-RD50-CMOS group, known as the \mpw, demonstrates competitive radiation tolerance, spatial granularity, and timing resolution -- key requirements for future high-energy physics experiments such as the HL-LHC and FCC. Fabricated using a \SI{150}{nm} CMOS process by \emph{LFoundry}, it introduces several improvements over its predecessor, the \emph{RD50-MPW3}, including separated power domains for reduced noise, a new backside biasing scheme, and an enhanced guard ring structure, enabling operation at bias voltages up to \SI{800}{V}.
Tests with non-irradiated samples achieved hit detection efficiencies exceeding \SI{99.9}{\%} and a spatial resolution around \SI{16}{μm}. Neutron-irradiated sensors were characterized using IV measurements and test-beam campaigns, confirming the sensor's robustness in high-radiation environments. The results highlight the ability of HV-CMOS technology to restore hit detection efficiency post-irradiation by increasing the applied bias voltage. Details of these measurements and timing performance are presented in this paper.
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Submitted 22 April, 2025;
originally announced April 2025.
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Characterization of the RD50-MPW4 HV-CMOS pixel sensor
Authors:
B. Pilsl,
T. Bergauer,
R. Casanova,
H. Handerkas,
C. Irmler,
U. Kraemer,
R. Marco-Hernandez,
J. Mazorra de Cos,
F. R. Palomo,
S. Powell,
P. Sieberer,
J. Sonneveld,
H. Steininger,
E. Vilella,
B. Wade,
C. Zhang,
S. Zhang
Abstract:
The RD50-MPW4 is the latest HV-CMOS pixel sensor from the CERN-RD50-CMOS working group, designed to evaluate the HV-CMOS technology in terms of spatial resolution, radiation hardness and timing performance. Fabricated by LFoundry using a 150nm process, it features an improved architecture to mitigate crosstalk, which has been an issue with the predecessor RD50-MPW3, allowing more sensitive thresho…
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The RD50-MPW4 is the latest HV-CMOS pixel sensor from the CERN-RD50-CMOS working group, designed to evaluate the HV-CMOS technology in terms of spatial resolution, radiation hardness and timing performance. Fabricated by LFoundry using a 150nm process, it features an improved architecture to mitigate crosstalk, which has been an issue with the predecessor RD50-MPW3, allowing more sensitive threshold settings and full matrix operation. Enhancements include separated power domains for peripheral and in-pixel digital readout, a new backside-biasing step, and an improved guard ring structure supporting biasing up to 500V, significantly boosting radiation hardness. Laboratory measurements and test beam results presented in this paper show significant improvements over its predecessor regarding noise behavior, spatial resolution, and efficiency.
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Submitted 16 September, 2024; v1 submitted 31 July, 2024;
originally announced July 2024.
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Measurements of time resolution of the RD50-MPW2 DMAPS prototype using TCT and $^{90}\mathrm{Sr}$
Authors:
J. Debevc,
M. Franks,
B. Hiti,
U. Kraemer,
G. Kramberger,
I. Mandić,
R. Marco-Hernández,
D. J. L. Nobels,
S. Powell,
J. Sonneveld,
H. Steininger,
C. Tsolanta,
E. Vilella,
C. Zhang
Abstract:
Results in this paper present an in-depth study of time resolution for active pixels of the RD50-MPW2 prototype CMOS particle detector. Measurement techniques employed include Backside- and Edge-TCT configurations, in addition to electrons from a $^{90}\mathrm{Sr}$ source. A sample irradiated to $5\cdot 10^{14}\,\mathrm{n}_\mathrm{eq}/\mathrm{cm}^2$ was used to study the effect of radiation damage…
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Results in this paper present an in-depth study of time resolution for active pixels of the RD50-MPW2 prototype CMOS particle detector. Measurement techniques employed include Backside- and Edge-TCT configurations, in addition to electrons from a $^{90}\mathrm{Sr}$ source. A sample irradiated to $5\cdot 10^{14}\,\mathrm{n}_\mathrm{eq}/\mathrm{cm}^2$ was used to study the effect of radiation damage. Timing performance was evaluated for the entire pixel matrix and with positional sensitivity within individual pixels as a function of the deposited charge. Time resolution obtained with TCT is seen to be uniform throughout the pixel's central region with approx. $220\,\mathrm{ps}$ at $12\,\mathrm{ke}^-$ of deposited charge, degrading at the edges and lower values of deposited charge. $^{90}\mathrm{Sr}$ measurements show a slightly worse time resolution as a result of delayed events coming from the peripheral areas of the pixel.
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Submitted 25 January, 2024; v1 submitted 4 December, 2023;
originally announced December 2023.
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Study of neutron irradiation effects in Depleted CMOS detector structures
Authors:
I. Mandić,
V. Cindro,
J. Debevc,
A. Gorišek,
B. Hiti,
G. Kramberger,
P. Skomina,
M. Zavrtanik,
M. Mikuž,
E. Vilella,
C. Zhang,
S. Powell,
M. Franks,
R. Marco-Hernandez,
H. Steininger
Abstract:
In this paper results of Edge-TCT and I-V measurements with passive test structures made in LFoundry 150 nm HV-CMOS process on p-type substrates with different initial resistivities ranging from 0.5 to 3 k$Ω$cm are presented. Samples were irradiated with reactor neutrons up to a fluence of 2$\cdot$10$^{15}$ n$_{\mathrm{eq}}$/cm$^2$. Depletion depth was measured with Edge-TCT. Effective space charg…
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In this paper results of Edge-TCT and I-V measurements with passive test structures made in LFoundry 150 nm HV-CMOS process on p-type substrates with different initial resistivities ranging from 0.5 to 3 k$Ω$cm are presented. Samples were irradiated with reactor neutrons up to a fluence of 2$\cdot$10$^{15}$ n$_{\mathrm{eq}}$/cm$^2$. Depletion depth was measured with Edge-TCT. Effective space charge concentration $N_{\mathrm{eff}}$ was estimated from the dependence of depletion depth on bias voltage and studied as a function of neutron fluence. Dependence of $N_{\mathrm{eff}}$ on fluence changes with initial acceptor concentration in agreement with other measurements with p-type silicon. Long term accelerated annealing study of $N_{\mathrm{eff}}$ and detector current up to 1280 minutes at 60$^\circ$C was made. It was found that $N_{\mathrm{eff}}$ and current in reverse biased detector behaves as expected for irradiated silicon.
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Submitted 15 February, 2022; v1 submitted 20 December, 2021;
originally announced December 2021.
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Characterisation of analogue front end and time walk in CMOS active pixel sensor
Authors:
B. Hiti,
V. Cindro,
A. Gorišek,
M. Franks,
R. Marco-Hernández,
G. Kramberger,
I. Mandić,
M. Mikuž,
S. Powell,
H. Steininger,
E. Vilella,
M. Zavrtanik,
C. Zhang
Abstract:
In this work we investigated a method to determine time walk in an active silicon pixel sensor prototype using Edge-TCT with infrared laser charge injection. Samples were investigated before and after neutron irradiation to 5e14 neq/cm2. Threshold, noise and calibration of the analogue front end were determined with external charge injection. A spatially sensitive measurement of collected charge a…
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In this work we investigated a method to determine time walk in an active silicon pixel sensor prototype using Edge-TCT with infrared laser charge injection. Samples were investigated before and after neutron irradiation to 5e14 neq/cm2. Threshold, noise and calibration of the analogue front end were determined with external charge injection. A spatially sensitive measurement of collected charge and time walk was carried out with Edge-TCT, showing a uniform charge collection and output delay in pixel centre. On pixel edges charge sharing was observed due to finite beam width resulting in smaller signals and larger output delay. Time walk below 25 ns was observed for charge above 2000 electrons at a threshold above the noise level. Time walk measurement with external charge injection yielded identical results.
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Submitted 23 November, 2021; v1 submitted 11 October, 2021;
originally announced October 2021.
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Prototyping of petalets for the Phase-II Upgrade of the silicon strip tracking detector of the ATLAS Experiment
Authors:
S. Kuehn,
V. Benítez,
J. Fernández-Tejero,
C. Fleta,
M. Lozano,
M. Ullán,
H. Lacker,
L. Rehnisch,
D. Sperlich,
D. Ariza,
I. Bloch,
S. Díez,
I. Gregor,
J. Keller,
K. Lohwasser,
L. Poley,
V. Prahl,
N. Zakharchuk,
M. Hauser,
K. Jakobs,
K. Mahboubi,
R. Mori,
U. Parzefall,
J. Bernabéu,
C. Lacasta
, et al. (9 additional authors not shown)
Abstract:
In the high luminosity era of the Large Hadron Collider, the HL-LHC, the instantaneous luminosity is expected to reach unprecedented values, resulting in about 200 proton-proton interactions in a typical bunch crossing. To cope with the resultant increase in occupancy, bandwidth and radiation damage, the ATLAS Inner Detector will be replaced by an all-silicon system, the Inner Tracker (ITk). The I…
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In the high luminosity era of the Large Hadron Collider, the HL-LHC, the instantaneous luminosity is expected to reach unprecedented values, resulting in about 200 proton-proton interactions in a typical bunch crossing. To cope with the resultant increase in occupancy, bandwidth and radiation damage, the ATLAS Inner Detector will be replaced by an all-silicon system, the Inner Tracker (ITk). The ITk consists of a silicon pixel and a strip detector and exploits the concept of modularity. Prototyping and testing of various strip detector components has been carried out. This paper presents the developments and results obtained with reduced-size structures equivalent to those foreseen to be used in the forward region of the silicon strip detector. Referred to as petalets, these structures are built around a composite sandwich with embedded cooling pipes and electrical tapes for routing the signals and power. Detector modules built using electronic flex boards and silicon strip sensors are glued on both the front and back side surfaces of the carbon structure. Details are given on the assembly, testing and evaluation of several petalets. Measurement results of both mechanical and electrical quantities are shown. Moreover, an outlook is given for improved prototyping plans for large structures.
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Submitted 5 November, 2017;
originally announced November 2017.
