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Quantum Emitters in Hexagonal Boron Nitride: Principles, Engineering and Applications
Authors:
Thi Ngoc Anh Mai,
Md Shakhawath Hossain,
Nhat Minh Nguyen,
Yongliang Chen,
Chaohao Chen,
Xiaoxue Xu,
Quang Thang Trinh,
Toan Dinh,
Toan Trong Tran
Abstract:
Solid-state quantum emitters, molecular-sized complexes releasing a single photon at a time, have garnered much attention owing to their use as a key building block in various quantum technologies. Among these, quantum emitters in hexagonal boron nitride (hBN) have emerged as front runners with superior attributes compared to other competing platforms. These attributes are attainable thanks to the…
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Solid-state quantum emitters, molecular-sized complexes releasing a single photon at a time, have garnered much attention owing to their use as a key building block in various quantum technologies. Among these, quantum emitters in hexagonal boron nitride (hBN) have emerged as front runners with superior attributes compared to other competing platforms. These attributes are attainable thanks to the robust, two-dimensional lattice of the material formed by the extremely strong B-N bonds. This review discusses the fundamental properties of quantum emitters in hBN and highlights recent progress in the field. The focus is on the fabrication and engineering of these quantum emitters facilitated by state-of-the-art equipment. Strategies to integrate the quantum emitters with dielectric and plasmonic cavities to enhance their optical properties are summarized. The latest developments in new classes of spin-active defects, their predicted structural configurations, and the proposed suitable quantum applications are examined. Despite the current challenges, quantum emitters in hBN have steadily become a promising platform for applications in quantum information science.
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Submitted 22 January, 2025;
originally announced January 2025.
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Fiber-based Ratiometric Optical Thermometry with Silicon-Vacancy in Microdiamonds
Authors:
Md Shakhawath Hossain,
Miguel Bacaoco,
Thi Ngoc Anh Mai,
Guillaume Ponchon,
Chaohao Chen,
Lei Ding,
Yongliang Chen,
Evgeny Ekimov,
Helen Xu,
Alexander S. Solntsev,
Toan Trong Tran
Abstract:
Fiber optic all-optical thermometry is a promising technology to track temperature at a micro-scale while designing efficient and reliable microelectronic devices and components. In this work, we demonstrate a novel real-time ratiometric fiber optic thermometry technique based on silicon-vacancy (SiV) diamond that shows the highest temperature resolution (22.91 KHz^(-1/2) Wcm^(-2)) and spatial res…
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Fiber optic all-optical thermometry is a promising technology to track temperature at a micro-scale while designing efficient and reliable microelectronic devices and components. In this work, we demonstrate a novel real-time ratiometric fiber optic thermometry technique based on silicon-vacancy (SiV) diamond that shows the highest temperature resolution (22.91 KHz^(-1/2) Wcm^(-2)) and spatial resolution (~7.5 um) among all-optical fiber-based thermosensors reported to date. Instead of analyzing the spectral features of temperature-dependent SiV signal, coming from SiV micro-diamond fixed on the fiber tip, an alternative parallel detection method based on filtering optics and photon counters is proposed to read out the sample temperature in real-time. The signal collection efficiency of the fiber is also investigated numerically with semi-analytic ray-optical analysis and then compared with our experimental study. We finally demonstrate the performance of the thermosensor by monitoring the temperature at distinct locations in a lab-built graphite-based microheater device. Our work introduces a reconfigurable method for temperature monitoring in microelectronic, microfluidic devices, or biological environments and unlocks a new direction for fiber-based all-optical thermometry research.
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Submitted 29 November, 2023;
originally announced November 2023.
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Cryogenic Thermal Shock Effects on Optical Properties of Quantum Emitters in Hexagonal Boron Nitride
Authors:
Thi Ngoc Anh Mai,
Sajid Ali,
Md Shakhawath Hossain,
Chaohao Chen,
Lei Ding,
Yongliang Chen,
Alexander S. Solntsev,
Hongwei Mou,
Xiaoxue Xu,
Nikhil Medhekar,
Toan Trong Tran
Abstract:
Solid-state quantum emitters are vital building blocks for quantum information science and quantum technology. Among various types of solid-state emitters discovered to date, color centers in hexagonal boron nitride have garnered tremendous traction in recent years thanks to their environmental robustness, high brightness and room-temperature operation. Most recently, these quantum emitters have b…
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Solid-state quantum emitters are vital building blocks for quantum information science and quantum technology. Among various types of solid-state emitters discovered to date, color centers in hexagonal boron nitride have garnered tremendous traction in recent years thanks to their environmental robustness, high brightness and room-temperature operation. Most recently, these quantum emitters have been employed for satellite-based quantum key distribution. One of the most important requirements to qualify these emitters for space-based applications is their optical stability against cryogenic thermal shock. Such understanding has, however, remained elusive to date. Here, we report on the effects caused by such thermal shock which induces random, irreversible changes in the spectral characteristics of the quantum emitters. By employing a combination of structural characterizations and density functional calculations, we attribute the observed changes to lattice strains caused by the cryogenic temperature shock. Our study shed light on the stability of the quantum emitters under extreme conditions, similar to those countered in outer space.
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Submitted 28 November, 2023;
originally announced November 2023.
