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Spectral-temporal processing using integrated recursive electro-optic circuit
Authors:
Xudong Li,
Yaowen Hu,
Tong Ge,
Andrea Cordaro,
Yunxiang Song,
Xinrui Zhu,
Shengyuan Lu,
Keith Powell,
Letícia Magalhães,
Urban Senica,
Neil Sinclair,
Marko Lončar
Abstract:
Advances in integrated photonics have enabled unprecedented level of control of light, powering a wide range of photonic technologies from communications and computing to precision metrology and quantum information. However, the conventional on-chip optical signal processing approaches based on optical waveguides and cavities suffer from their large physical footprint and narrow operating bandwidt…
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Advances in integrated photonics have enabled unprecedented level of control of light, powering a wide range of photonic technologies from communications and computing to precision metrology and quantum information. However, the conventional on-chip optical signal processing approaches based on optical waveguides and cavities suffer from their large physical footprint and narrow operating bandwidth, respectively. To address this, we propose and experimentally demonstrate, using the thin film lithium niobate (TFLN) photonics, a modular, recursive optical signal processing framework. In our approach, fast electro-optic (EO) switch is used to either keep an optical packet inside the loop, with the processing element embedded within, or to release it from the loop and direct it towards the output waveguide. By configuring the switch on a timescale shorter than a time the photon spends traversing the loop, this architecture can achieve different optical pathlengths in a compact footprint without sacrificing optical bandwidth. As an example, we embed a phase-modulator (PM) inside the loop and demonstrate a frequency shift of optical packets up to 420 GHz, using only a 3 GHz sinusoidal microwave signal. By replacing the PM with chirped Bragg gratings (CBG), we demonstrate recursive delay line featuring large group delays of 28 ps/nm over a 30 nm optical bandwidth. Finally, by introducing asymmetric Mach-Zehnder interferometer (AMZI) inside the loop, we demonstrate a reconfigurable differentiation of the optical packet in time, up to an unprecedented fifth-order. Our results establish a powerful and scalable platform for multifunctional photonic processing, setting the stage for next-generation integrated systems with ultrahigh reconfigurability and spectral-temporal versatility.
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Submitted 29 September, 2025;
originally announced September 2025.
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Universal dynamics and microwave control of programmable cavity electro-optic frequency combs
Authors:
Yunxiang Song,
Tianqi Lei,
Yanyun Xue,
Andrea Cordaro,
Michael Haas,
Guanhao Huang,
Xudong Li,
Shengyuan Lu,
Leticia Magalhaes,
Jiayu Yang,
Matthew Yeh,
Xinrui Zhu,
Neil Sinclair,
Qihuang Gong,
Yaowen Hu,
Marko Loncar
Abstract:
Electro-optic (EO) frequency combs are foundational for metrology and spectroscopy. Specifically, microresonator-based cavity EO combs are distinguished by efficient sideband generation, precisely controlled by microwave signals, enabling high-performance integrated frequency references and pulse sources. However, the apparent simplicity of these devices, often described by the EO modulation-induc…
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Electro-optic (EO) frequency combs are foundational for metrology and spectroscopy. Specifically, microresonator-based cavity EO combs are distinguished by efficient sideband generation, precisely controlled by microwave signals, enabling high-performance integrated frequency references and pulse sources. However, the apparent simplicity of these devices, often described by the EO modulation-induced coupling of nearest-neighbor cavity modes, has limited investigations of their fundamental physics, thereby restricting their full potential. Here, we uncover the universal dynamics and complete frequency lattice connectivity underpinning cavity EO microcombs, as well as characterize the full space of nonlinear optical states, controlled by modulation depth and optical detuning, using the thin-film lithium niobate photonic platform. Leveraging this understanding, we design complex long-range couplings between cavity modes to realize programmable spectro-temporal shaping of the generated combs and pulses. We achieve three technological advances, including repetition-rate flexibility, substantial comb bandwidth extension beyond traditional scaling laws, and resonantly-enhanced flat-top spectrum. Our results provide physical insights for synchronously driven cavity-based EO systems, broadly defined, paving the way for electrically controlled and electrically enhanced comb generators for next-generation photonic applications.
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Submitted 31 August, 2025; v1 submitted 29 July, 2025;
originally announced July 2025.
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Wireless millimeterwave electro-optics on thin film lithium niobate
Authors:
A. Gaier,
K. Mamian,
S. Rajabali,
Y. Lampert,
J. Liu,
L. Magalhaes,
A. Shams-Ansari,
M. Loncar,
I. -C. Benea-Chelmus
Abstract:
The rapid growth of global data traffic is accelerating the need for ultra-broadband communication technologies, particularly in cloud infrastructure and emerging 6G wireless systems. Optical computing and quantum information processing also demand fast, scalable ways to interface optical and electronic signals. Integrated electro-optic modulators provide a compact and efficient solution, but exte…
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The rapid growth of global data traffic is accelerating the need for ultra-broadband communication technologies, particularly in cloud infrastructure and emerging 6G wireless systems. Optical computing and quantum information processing also demand fast, scalable ways to interface optical and electronic signals. Integrated electro-optic modulators provide a compact and efficient solution, but extending their operation into the millimeterwave (mmWave) range with wide bandwidth and compatibility with wireless signals remains a significant challenge. Bulky electrical packaging and high mmWave losses remain primary barriers to scalability. Here, we demonstrate a wireless and wideband electro-optic modulation architecture that directly interfaces mmWaves with optical signals, eliminating the need for impedance-matched mmWave probes and cables. By integrating an on-chip antenna with a co-designed transmission line on thin-film lithium niobate platform, we achieve wideband modulation across the WR9.0 (82-125 GHz) and WR2.8 (240-380 GHz) bands. The wideband nature of our modulator enables the device to function as a high-speed detector of mmWave carriers modulated up to 6~GHz and achieves a flat and wide response, a key requirement for 6G and high-speed mmWave sensing. By configuring the antenna-coupled transmission line to operate as a cavity, our wireless platform enables triply resonant electro-optic frequency comb generation with mode spacing of 123.2 GHz and 307.9 GHz. Extracted single-photon electro-optic coupling rates of $g_{0} =2π\times 4.98$ kHz and $2π\times 9.93$ kHz, at 123.2 and 307.9 GHz, respectively, demonstrate favorable scaling with mmWave frequency. These results introduce a new class of wireless electro-optic devices for high-speed modulation, detection, and frequency comb generation, with impactful applications in communications, sensing, and quantum technologies.
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Submitted 30 June, 2025; v1 submitted 7 May, 2025;
originally announced May 2025.
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Integrated electro-optic digital-to-analog link for efficient computing and arbitrary waveform generation
Authors:
Yunxiang Song,
Yaowen Hu,
Xinrui Zhu,
Keith Powell,
Letícia Magalhães,
Fan Ye,
Hana Warner,
Shengyuan Lu,
Xudong Li,
Dylan Renaud,
Norman Lippok,
Di Zhu,
Benjamin Vakoc,
Mian Zhang,
Neil Sinclair,
Marko Lončar
Abstract:
The rapid growth in artificial intelligence and modern communication systems demands innovative solutions for increased computational power and advanced signaling capabilities. Integrated photonics, leveraging the analog nature of electromagnetic waves at the chip scale, offers a promising complement to approaches based on digital electronics. To fully unlock their potential as analog processors,…
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The rapid growth in artificial intelligence and modern communication systems demands innovative solutions for increased computational power and advanced signaling capabilities. Integrated photonics, leveraging the analog nature of electromagnetic waves at the chip scale, offers a promising complement to approaches based on digital electronics. To fully unlock their potential as analog processors, establishing a common technological base between conventional digital electronic systems and analog photonics is imperative to building next-generation computing and communications hardware. However, the absence of an efficient interface has critically challenged comprehensive demonstrations of analog advantage thus far, with the scalability, speed, and energy consumption as primary bottlenecks. Here, we address this challenge and demonstrate a general electro-optic digital-to-analog link (EO-DiAL) enabled by foundry-based lithium niobate nanophotonics. Using purely digital inputs, we achieve on-demand generation of (i) optical and (ii) electronic waveforms at information rates up to 186 Gbit/s. The former addresses the digital-to-analog electro-optic conversion challenge in photonic computing, showcasing high-fidelity MNIST encoding while consuming 0.058 pJ/bit. The latter enables a pulse-shaping-free microwave arbitrary waveform generation method with ultrabroadband tunable delay and gain. Our results pave the way for efficient and compact digital-to-analog conversion paradigms enabled by integrated photonics and underscore the transformative impact analog photonic hardware may have on various applications, such as computing, optical interconnects, and high-speed ranging.
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Submitted 6 November, 2024;
originally announced November 2024.
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Integrated lithium niobate photonic computing circuit based on efficient and high-speed electro-optic conversion
Authors:
Yaowen Hu,
Yunxiang Song,
Xinrui Zhu,
Xiangwen Guo,
Shengyuan Lu,
Qihang Zhang,
Lingyan He,
C. A. A. Franken,
Keith Powell,
Hana Warner,
Daniel Assumpcao,
Dylan Renaud,
Ying Wang,
Letícia Magalhães,
Victoria Rosborough,
Amirhassan Shams-Ansari,
Xudong Li,
Rebecca Cheng,
Kevin Luke,
Kiyoul Yang,
George Barbastathis,
Mian Zhang,
Di Zhu,
Leif Johansson,
Andreas Beling
, et al. (2 additional authors not shown)
Abstract:
Here we show a photonic computing accelerator utilizing a system-level thin-film lithium niobate circuit which overcomes this limitation. Leveraging the strong electro-optic (Pockels) effect and the scalability of this platform, we demonstrate photonic computation at speeds up to 1.36 TOPS while consuming 0.057 pJ/OP. Our system features more than 100 thin-film lithium niobate high-performance com…
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Here we show a photonic computing accelerator utilizing a system-level thin-film lithium niobate circuit which overcomes this limitation. Leveraging the strong electro-optic (Pockels) effect and the scalability of this platform, we demonstrate photonic computation at speeds up to 1.36 TOPS while consuming 0.057 pJ/OP. Our system features more than 100 thin-film lithium niobate high-performance components working synergistically, surpassing state-of-the-art systems on this platform. We further demonstrate binary-classification, handwritten-digit classification, and image classification with remarkable accuracy, showcasing our system's capability of executing real algorithms. Finally, we investigate the opportunities offered by combining our system with a hybrid-integrated distributed feedback laser source and a heterogeneous-integrated modified uni-traveling carrier photodiode. Our results illustrate the promise of thin-film lithium niobate as a computational platform, addressing current bottlenecks in both electronic and photonic computation. Its unique properties of high-performance electro-optic weight encoding and conversion, wafer-scale scalability, and compatibility with integrated lasers and detectors, position thin-film lithium niobate photonics as a valuable complement to silicon photonics, with extensions to applications in ultrafast and power-efficient signal processing and ranging.
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Submitted 4 November, 2024;
originally announced November 2024.
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Photonics-integrated terahertz transmission lines
Authors:
Y. Lampert,
A. Shams-Ansari,
A. Gaier,
A. Tomasino,
S. Rajabali,
L. Magalhaes,
M. Lončar,
I. -C. Benea-Chelmus
Abstract:
Modern communication and sensing technologies rely on connecting the optical domain with the microwave domain. Terahertz technologies, spanning increased frequencies from 100 GHz to 10 THz, are critical for providing larger bandwidths and faster switching capabilities. Despite progress in high-frequency electronic sources and detectors, these technologies lack a direct link to the optical domain,…
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Modern communication and sensing technologies rely on connecting the optical domain with the microwave domain. Terahertz technologies, spanning increased frequencies from 100 GHz to 10 THz, are critical for providing larger bandwidths and faster switching capabilities. Despite progress in high-frequency electronic sources and detectors, these technologies lack a direct link to the optical domain, and face challenges with increasing frequencies (> 1 THz). Nonlinear processes, such as optical rectification, offer potential solutions for terahertz generation but are currently limited to discrete components based on bulk nonlinear crystals, missing out miniaturisation opportunities from integration of optical circuits with terahertz ones. We address this challenge by integrating phase-matched terahertz transmission lines with photonic circuits in a single hybrid architecture on the thin-film lithium niobate~(TFLN) platform. This design demonstrates phase-matched, broadband terahertz emission spanning four octaves (200 GHz to 3.5 THz) through broadband down-conversion of optical signals at telecommunication wavelengths. The micron-sized transmission lines provide terahertz field confinement with minimal radiative loss, enabling compact THz cavities embedded in integrated photonic circuits. This integration is crucial for leveraging photonics' advantages in low-noise, low-loss, and high-speed operations for terahertz generation. Our platform can readily be integrated with other mature photonics components, such as electro-optic modulators, frequency comb sources, or femtosecond sources to pave the way for compact, power-efficient, and frequency-agile broadband sources with applications in telecommunications, spectroscopy, quantum electrodynamics and optical computing.
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Submitted 21 June, 2024;
originally announced June 2024.
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Stable electro-optic modulators using thin-film lithium tantalate
Authors:
Keith Powell,
Xudong Li,
Daniel Assumpcao,
Letícia Magalhães,
Neil Sinclair,
Marko Lončar
Abstract:
We demonstrate electro-optic modulators realized in low-loss thin-film lithium tantalate with superior DC-stability (<1 dB power fluctuation from quadrature with 12.1 dBm input) compared to equivalent thin-film lithium niobate modulators (5 dB fluctuation) over 46 hours.
We demonstrate electro-optic modulators realized in low-loss thin-film lithium tantalate with superior DC-stability (<1 dB power fluctuation from quadrature with 12.1 dBm input) compared to equivalent thin-film lithium niobate modulators (5 dB fluctuation) over 46 hours.
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Submitted 8 May, 2024;
originally announced May 2024.
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Wavelength-accurate and wafer-scale process for nonlinear frequency mixers in thin-film lithium niobate
Authors:
C. J. Xin,
Shengyuan Lu,
Jiayu Yang,
Amirhassan Shams-Ansari,
Boris Desiatov,
Letícia S. Magalhães,
Soumya S. Ghosh,
Erin McGee,
Dylan Renaud,
Nicholas Achuthan,
Arseniy Zvyagintsev,
David Barton III,
Neil Sinclair,
Marko Lončar
Abstract:
Recent advancements in thin-film lithium niobate (TFLN) photonics have led to a new generation of high-performance electro-optic devices, including modulators, frequency combs, and microwave-to-optical transducers. However, the broader adoption of TFLN-based devices that rely on all-optical nonlinearities have been limited by the sensitivity of quasi-phase matching (QPM), realized via ferroelectri…
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Recent advancements in thin-film lithium niobate (TFLN) photonics have led to a new generation of high-performance electro-optic devices, including modulators, frequency combs, and microwave-to-optical transducers. However, the broader adoption of TFLN-based devices that rely on all-optical nonlinearities have been limited by the sensitivity of quasi-phase matching (QPM), realized via ferroelectric poling, to fabrication tolerances. Here, we propose a scalable fabrication process aimed at improving the wavelength-accuracy of optical frequency mixers in TFLN. In contrast to the conventional pole-before-etch approach, we first define the waveguide in TFLN and then perform ferroelectric poling. This sequence allows for precise metrology before and after waveguide definition to fully capture the geometry imperfections. Systematic errors can also be calibrated by measuring a subset of devices to fine-tune the QPM design for remaining devices on the wafer. Using this method, we fabricated a large number of second harmonic generation devices aimed at generating 737 nm light, with 73% operating within 5 nm of the target wavelength. Furthermore, we also demonstrate thermo-optic tuning and trimming of the devices via cladding deposition, with the former bringing ~96% of tested devices to the target wavelength. Our technique enables the rapid growth of integrated quantum frequency converters, photon pair sources, and optical parametric amplifiers, thus facilitating the integration of TFLN-based nonlinear frequency mixers into more complex and functional photonic systems.
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Submitted 18 April, 2024;
originally announced April 2024.
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Twenty-nine million Intrinsic Q-factor Monolithic Microresonators on Thin Film Lithium Niobate
Authors:
Xinrui Zhu,
Yaowen Hu,
Shengyuan Lu,
Hana K. Warner,
Xudong Li,
Yunxiang Song,
Leticia Magalhaes,
Amirhassan Shams-Ansari,
Neil Sinclair,
Marko Loncar
Abstract:
The recent emergence of thin-film lithium niobate (TFLN) has extended the landscape of integrated photonics. This has been enabled by the commercialization of TFLN wafers and advanced nanofabrication of TFLN such as high-quality dry etching. However, fabrication imperfections still limit the propagation loss to a few dB/m, restricting the impact of this platform. Here, we demonstrate TFLN microres…
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The recent emergence of thin-film lithium niobate (TFLN) has extended the landscape of integrated photonics. This has been enabled by the commercialization of TFLN wafers and advanced nanofabrication of TFLN such as high-quality dry etching. However, fabrication imperfections still limit the propagation loss to a few dB/m, restricting the impact of this platform. Here, we demonstrate TFLN microresonators with a record-high intrinsic quality (Q) factor of twenty-nine million, corresponding to an ultra-low propagation loss of 1.3 dB/m. We present spectral analysis and the statistical distribution of Q factors across different resonator geometries. Our work pushes the fabrication limits of TFLN photonics to achieve a Q factor within one order of magnitude of the material limit.
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Submitted 25 February, 2024;
originally announced February 2024.
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Cross-Polarized Stimulated Brillouin Scattering in Lithium Niobate Waveguides
Authors:
Caique C. Rodrigues,
Nick J. Schilder,
Roberto O. Zurita,
Letícia S. Magalhães,
Amirhassan Shams-Ansari,
Felipe J. L. dos Santos,
Otávio M. Paiano,
Thiago P. M. Alegre,
Marko Lončar,
Gustavo S. Wiederhecker
Abstract:
We report on the experimental demonstration of cross-polarization backward stimulated Brillouin scattering (BSBS) in lithium niobate on insulator (LNOI) waveguides. Performing polarization-sensitive pump and probe measurements, we captured both intra- and intermodal scattering between counterpropagating fundamental optical modes. Remarkably, cross-polarization scattering achieved SBS gains that ex…
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We report on the experimental demonstration of cross-polarization backward stimulated Brillouin scattering (BSBS) in lithium niobate on insulator (LNOI) waveguides. Performing polarization-sensitive pump and probe measurements, we captured both intra- and intermodal scattering between counterpropagating fundamental optical modes. Remarkably, cross-polarization scattering achieved SBS gains that exceeded $G_{B}=$80m$^{-1}$W$^{-1}$. This substantial gain not only broadens the utility of polarization in SBS but also paves the way for high-performance devices, including ultranarrowband lasers, robust broadband nonreciprocal devices, RF filters, and microwave-to-optical converters.
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Submitted 6 March, 2025; v1 submitted 29 November, 2023;
originally announced November 2023.