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Flying doughnut terahertz pulses generated from semiconductor currents
Authors:
Kamalesh Jana,
Yonghao Mi,
Søren H. Møller,
Dong Hyuk Ko,
Shima Gholam-Mirzaei,
Daryoush Abdollahpour,
Shawn Sederberg,
Paul B. Corkum
Abstract:
The ability to manipulate the space-time structure of light waves diversifies light-matter interaction and light-driven applications. Conventionally, metasurfaces are employed to locally control the amplitude and phase of light fields by the material response and structure of small meta-atoms. However, the fixed spatial structures of metasurfaces offer limited opportunities. Here, using quantum co…
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The ability to manipulate the space-time structure of light waves diversifies light-matter interaction and light-driven applications. Conventionally, metasurfaces are employed to locally control the amplitude and phase of light fields by the material response and structure of small meta-atoms. However, the fixed spatial structures of metasurfaces offer limited opportunities. Here, using quantum control we introduce a new approach that enables the amplitude, sign, and even configuration of the generated light fields to be manipulated in an all-optical manner. Following this approach, we demonstrate the generation of flying doughnut terahertz (THz) pulses. We show that the single-cycle THz pulse radiated from the dynamic semiconductor ring current has an electric field structure that is azimuthally polarized and that the space- and time-resolved magnetic field has a strong, isolated longitudinal component. As a first application, we detect absorption features from ambient water vapor on the spatiotemporal structure of the measured electric fields and the calculated magnetic fields. Quantum control is a powerful and flexible route to generating any structured light pulse in the THz range, while pulse compression of cylindrical vector beams is available for very high-power magnetic-pulse generation from the mid-infrared to near UV spectral region. Pulses such as these will serve as unique probes for spectroscopy, imaging, telecommunications, and magnetic materials.
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Submitted 9 October, 2023;
originally announced October 2023.
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Mapping the direction of electron ionization to phase delay between VUV and IR laser pulses
Authors:
M. Mountney,
G. P. Katsoulis,
S. H. Møller,
K. Jana,
P. Corkum,
A. Emmanouilidou
Abstract:
We theoretically demonstrate a one-to-one mapping between the direction of electron ionization and the phase delay between a linearly polarized VUV and a circular IR laser pulse. To achieve this, we use an ultrashort VUV pulse that defines the moment in time and space when an above threshold electron is released in the IR pulse. The electron can then be accelerated to high velocities escaping in a…
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We theoretically demonstrate a one-to-one mapping between the direction of electron ionization and the phase delay between a linearly polarized VUV and a circular IR laser pulse. To achieve this, we use an ultrashort VUV pulse that defines the moment in time and space when an above threshold electron is released in the IR pulse. The electron can then be accelerated to high velocities escaping in a direction completely determined by the phase delay between the two pulses. The dipole matrix element to transition from an initial bound state of the N$_2$ molecule, considered in this work, to the continuum is obtained using quantum mechanical techniques that involve computing accurate continuum molecular states. Following release of the electron in the IR pulse, we evolve classical trajectories, neglecting the Coulomb potential and accounting for quantum interference, to compute the distribution of the direction and magnitude of the final electron momentum. The concept we theoretically develop can be implemented to produce nanoscale ring currents that generate large magnetic fields.
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Submitted 25 October, 2022; v1 submitted 6 June, 2022;
originally announced June 2022.
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Strongly enhanced upconversion in trivalent erbium ions by tailored gold nanostructures: toward high-efficient silicon-based photovoltaics
Authors:
Jeppe Christiansen,
Joakim Vester-Petersen,
Søren Roesgaard,
Søren H. Møller,
Rasmus E. Christiansen,
Ole Sigmund,
Søren P. Madsen,
Peter Balling,
Brian Julsgaard
Abstract:
Upconversion of sub-band-gap photons constitutes a promising way for improving the efficiency of silicon-based solar cells beyond the Shockley-Queisser limit. 1500 to 980 nm upconversion by trivalent erbium ions is well-suited for this purpose, but the small absorption cross section hinders real-world applications. We employ tailored gold nanostructures to vastly improve the upconversion efficienc…
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Upconversion of sub-band-gap photons constitutes a promising way for improving the efficiency of silicon-based solar cells beyond the Shockley-Queisser limit. 1500 to 980 nm upconversion by trivalent erbium ions is well-suited for this purpose, but the small absorption cross section hinders real-world applications. We employ tailored gold nanostructures to vastly improve the upconversion efficiency in erbium-doped TiO$_2$ thin films. The nanostructures are found using topology optimization and parameter optimization and fabricated by electron beam lithography. In qualitative agreement with a theoretical model, the samples show substantial electric-field enhancements inside the upconverting films for excitation at 1500 nm for both s- and p-polarization under a wide range of incidence angles and excitation intensities. An unprecedented upconversion enhancement of 913(51) is observed at an excitation intensity of 1.7 Wcm$^{-2}$. We derive a semi-empirical expression for the photonically enhanced upconversion efficiency, valid for all excitation intensities. This allows us to determine the upconversion properties needed to achieve significant improvements in real-world solar-cell devices through photonic-enhanced upconversion.
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Submitted 17 November, 2019;
originally announced November 2019.
