Deconvoluting Thermomechanical Effects in X-ray Diffraction Data using Machine Learning
Authors:
Rachel E. Lim,
Shun-Li Shang,
Chihpin Chuang,
Thien Q. Phan,
Zi-Kui Liu,
Darren C. Pagan
Abstract:
X-ray diffraction is ideal for probing sub-surface state during complex or rapid thermomechanical loading of crystalline materials. However, challenges arise as the size of diffraction volumes increases due to spatial broadening and inability to deconvolute the effects of different lattice deformation mechanisms. Here, we present a novel approach to use combinations of physics-based modeling and m…
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X-ray diffraction is ideal for probing sub-surface state during complex or rapid thermomechanical loading of crystalline materials. However, challenges arise as the size of diffraction volumes increases due to spatial broadening and inability to deconvolute the effects of different lattice deformation mechanisms. Here, we present a novel approach to use combinations of physics-based modeling and machine learning to deconvolve thermal and mechanical elastic strains for diffraction data analysis. The method builds on a previous effort to extract thermal strain distribution information from diffraction data. The new approach is applied to extract the evolution of thermomechanical state during laser melting of an Inconel 625 wall specimen which produces significant residual stress upon cooling. A combination of heat transfer and fluid flow, elasto-plasticity, and X-ray diffraction simulations are used to generate training data for machine-learning (Gaussian Process Regression, GPR) models that map diffracted intensity distributions to underlying thermomechanical strain fields. First-principles density functional theory is used to determine accurate temperature-dependent thermal expansion and elastic stiffness used for elasto-plasticity modeling. The trained GPR models are found to be capable of deconvoluting the effects of thermal and mechanical strains, in addition to providing information about underlying strain distributions, even from complex diffraction patterns with irregularly shaped peaks.
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Submitted 8 January, 2025; v1 submitted 18 August, 2024;
originally announced August 2024.
Non-destructive Depth-Resolved Characterization of Residual Strain Fields in High Electron Mobility Transistors using Differential Aperture X-ray Microscopy
Authors:
Darren C. Pagan,
Md Abu Jafar Rasel,
Rachel E. Lim,
Dina Sheyfer,
Wenjun Liu,
Aman Haque
Abstract:
Localized residual stress and elastic strain concentrations in microelectronic devices often affect the electronic performance, resistance to thermomechanical damage, and, likely, radiation tolerance. A primary challenge for characterization of these concentrations is that they exist over sub-$μ$m length-scales, precluding their characterization by more traditional residual stress measurement tech…
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Localized residual stress and elastic strain concentrations in microelectronic devices often affect the electronic performance, resistance to thermomechanical damage, and, likely, radiation tolerance. A primary challenge for characterization of these concentrations is that they exist over sub-$μ$m length-scales, precluding their characterization by more traditional residual stress measurement techniques. Here we demonstrate the use of synchrotron X-ray -based differential aperture X-ray microscopy (DAXM) as a viable, non-destructive means to characterize these stress and strain concentrations in a depth-resolved manner. DAXM is used to map two-dimensional strain fields between source and drain in a gallium nitride (GaN) layer within high electron mobility transistors (HEMTs) with sub-$μ$m spatial resolution. Strain fields at various positions in both pristine and irradiated HEMT specimens are presented in addition to a preliminary stress analysis to estimate the distribution of various stress components within the GaN layer. $γ$-irradiation is found to significantly reduce the lattice plane spacing in the GaN along the sample normal direction which is attributed to radiation damage in transistor components bonded to the GaN during irradiation.
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Submitted 26 August, 2022; v1 submitted 12 July, 2022;
originally announced July 2022.
