Polarization doping ab initio verification of the concept charge conservation and nonlocality
Authors:
Ashfaq Ahmad,
Pawel Strak,
Pawel Kempisty,
Konrad Sakowski,
Jacek Piechota,
Yoshihiro Kangawa,
Izabella Grzegory,
Michal Leszczynski,
Zbigniew R. Zytkiewicz,
Grzegorz Muziol,
Eva Monroy,
Stanislaw Krukowski,
Agata Kaminska
Abstract:
In this work, we study the emergence of polarization doping in AlxGa1-xN layers with graded composition from a theoretical viewpoint. We demonstrate that the charge conservation law applies for fixed and mobile charges separately, leading to nonlocal compensation phenomena involving bulk fixed and mobile charge and polarization sheet charge at the heterointerfaces. The magnitude of the effect allo…
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In this work, we study the emergence of polarization doping in AlxGa1-xN layers with graded composition from a theoretical viewpoint. We demonstrate that the charge conservation law applies for fixed and mobile charges separately, leading to nonlocal compensation phenomena involving bulk fixed and mobile charge and polarization sheet charge at the heterointerfaces. The magnitude of the effect allows obtaining technically viable mobile charge density for optoelectronic devices without impurity doping (donors or acceptors). Therefore, it provides an additional tool for the device designer, with the potential to attain high conductivities: high carrier concentrations can be obtained even in materials with high dopant ionization energies, and the mobility is not limited by scattering at ionized impurities.
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Submitted 22 March, 2022; v1 submitted 2 June, 2021;
originally announced June 2021.
Thermal Annealing Effect on Electrical and Structural Properties of Tungsten Carbide Schottky Contacts on AlGaN/GaN heterostructures
Authors:
Giuseppe Greco,
Salvatore Di Franco,
Corrado Bongiorno,
Ewa Grzanka,
Mike Leszczynski,
Filippo Giannazzo,
Fabrizio Roccaforte
Abstract:
Tungsten carbide (WC) contacts have been investigated as a novel gold-free Schottky metallization for AlGaN/GaN heterostructures. The evolution of the electrical and structural/compositional properties of the WC/AlGaN contact has been monitored as a function of the annealing temperature in the range from 400 to 800°C. The Schottky barrier height ($Φ$B) at WC/AlGaN interface, extracted from the for…
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Tungsten carbide (WC) contacts have been investigated as a novel gold-free Schottky metallization for AlGaN/GaN heterostructures. The evolution of the electrical and structural/compositional properties of the WC/AlGaN contact has been monitored as a function of the annealing temperature in the range from 400 to 800°C. The Schottky barrier height ($Φ$B) at WC/AlGaN interface, extracted from the forward current-voltage characteristics of the diode, decreased from 0.8 eV in the as-deposited and 400°C annealed sample, to 0.56 eV after annealing at 800 °C. This large reduction of $Φ$B was accompanied by a corresponding increase of the reverse bias leakage current. Transmission electron microscopy coupled to electron energy loss spectroscopy analyses revealed the presence of oxygen (O) uniformly distributed in the WC layer, both in the as-deposited and 400°C annealed sample. Conversely, oxygen accumulation in a 2-3 nm thin W-O-C layer at the interface with AlGaN was observed after the annealing at 800 °C, as well as the formation of W2C grains within the film (confirmed by X-ray diffraction analyses). The formation of this interfacial W-O-C layer is plausibly the main origin of the decreased $Φ$B and the increased leakage current in the 800°C annealed Schottky diode, whereas the decreased O content inside the WC film can explain the reduced resistivity of the metal layer. The results provide an assessment of the processing conditions for the application of WC as Schottky contact for AlGaN/GaN heterostructures.
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Submitted 20 July, 2020;
originally announced July 2020.
