Analytical Modeling of $I-V$ characteristics using 2D Poisson Equations in AlN/$β$-Ga$_2$O$_3$ HEMT
Authors:
R. Singh,
T. R. Lenka,
D. K. Panda,
H. P. T. Nguyen,
N. El. I. Boukortt,
G. Crupi
Abstract:
In this paper, physics-based analytical models using two-dimensional (2D) Poisson equations for surface potential, channel potential, electric field, and drain current in AlN/$β$-Ga$_2$O$_3$ high electron mobility transistor (HEMT) is presented. The analytical expression of different quantities is achieved based on full depletion approximation of the AlN barrier layer and polarization charge induc…
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In this paper, physics-based analytical models using two-dimensional (2D) Poisson equations for surface potential, channel potential, electric field, and drain current in AlN/$β$-Ga$_2$O$_3$ high electron mobility transistor (HEMT) is presented. The analytical expression of different quantities is achieved based on full depletion approximation of the AlN barrier layer and polarization charge induced unified two-dimensional electron gas (2DEG) charge density model. For the validation of the developed model, results are compared with 2D numerical simulation results, and a good consistency is found between the two. The drain current model is also validated with experimental results of a similar dimension device. The developed model can be a good reference for different $β$-Ga$_2$O$_3$-based HEMTs.
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Submitted 8 August, 2021;
originally announced August 2021.
Design and characteristic study of electron blocking layer free AlInN nanowire deep ultraviolet light-emitting diodes
Authors:
Ravi Teja Velpula,
Barsha Jain,
Thang Ha Quoc Bui,
Tan Thi Pham,
Van Thang Le,
Hoang-Duy Nguyen,
Trupti Ranjan Lenka,
Hieu Pham Trung Nguyen
Abstract:
We report on the illustration of the first electron blocking layer (EBL) free AlInN nanowire light-emitting diodes (LEDs) operating in the deep ultraviolet (DUV) wavelength region (sub-250 nm). We have systematically analyzed the results using APSYS software and compared with simulated AlGaN nanowire DUV LEDs. From the simulation results, significant efficiency droop was observed in AlGaN based de…
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We report on the illustration of the first electron blocking layer (EBL) free AlInN nanowire light-emitting diodes (LEDs) operating in the deep ultraviolet (DUV) wavelength region (sub-250 nm). We have systematically analyzed the results using APSYS software and compared with simulated AlGaN nanowire DUV LEDs. From the simulation results, significant efficiency droop was observed in AlGaN based devices, attributed to the significant electron leakage. However, compared to AlGaN nanowire DUV LEDs at similar emission wavelength, the proposed single quantum well (SQW) AlInN based light-emitters offer higher internal quantum efficiency without droop up to current density of 1500 A/cm2 and high output optical power. Moreover, we find that transverse magnetic polarized emission is ~ 5 orders stronger than transverse electric polarized emission at 238 nm wavelength. Further research shows that the performance of the AlInN DUV nanowire LEDs decreases with multiple QWs in the active region due to the presence of the non-uniform carrier distribution in the active region. This study provides important insights on the design of new type of high performance AlInN nanowire DUV LEDs, by replacing currently used AlGaN semiconductors.
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Submitted 15 July, 2019;
originally announced July 2019.
