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About detecting very low mass black holes in LAr detectors
Authors:
Ionel Lazanu,
Sorina Lazanu,
Mihaela Pârvu
Abstract:
The nature of dark matter is still an open problem. The simplest assumption is that gravity is the only force coupled certainly to dark matter and thus the micro black holes could be a viable candidate. We investigated the possibility of direct detection of micro black holes with masses around and upward the Planck scale (10$^{-5}$ g), ensuring classical gravitational treatment of these objects in…
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The nature of dark matter is still an open problem. The simplest assumption is that gravity is the only force coupled certainly to dark matter and thus the micro black holes could be a viable candidate. We investigated the possibility of direct detection of micro black holes with masses around and upward the Planck scale (10$^{-5}$ g), ensuring classical gravitational treatment of these objects in the next generation of huge LAr detectors. We show that the signals (ionization and scintillation) produced in LAr enable the discrimination between micro black holes or other particles. It is expected that the trajectories of these micro black holes will appear as crossing the whole active medium, in any direction, producing uniform ionization and scintillation on all the path.
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Submitted 22 October, 2020; v1 submitted 12 June, 2020;
originally announced June 2020.
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Contribution of the electron-phonon interaction to Lindhard energy partition at low energy in Ge and Si detectors for astroparticle physics applications
Authors:
Ionel Lazanu,
Sorina Lazanu
Abstract:
The influence of the transient thermal effects on the partition of the energy of selfrecoils in germanium and silicon into energy eventually given to electrons and to atomic recoils respectively is studied. The transient effects are treated in the frame of the thermal spike model, which considers the electronic and atomic subsystems coupled through the electron - phonon interaction. For low energi…
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The influence of the transient thermal effects on the partition of the energy of selfrecoils in germanium and silicon into energy eventually given to electrons and to atomic recoils respectively is studied. The transient effects are treated in the frame of the thermal spike model, which considers the electronic and atomic subsystems coupled through the electron - phonon interaction. For low energies of selfrecoils, we show that the corrections to the energy partition curves due to the energy exchange during the transient processes modify the Lindhard predictions. These effects depend on the initial temperature of the target material, as the energies exchanged between electronic and lattice subsystems have different signs for temperatures lower and higher than about 15 K. Many of the experimental data reported in the literature support the model.
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Submitted 6 December, 2015; v1 submitted 23 May, 2015;
originally announced May 2015.
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Analysis of defect formation in semiconductor cryogenic bolometric detectors created by heavy dark matter
Authors:
Ionel Lazanu,
Magdalena Lidia Ciurea,
Sorina Lazanu
Abstract:
The cryogenic detectors in the form of bolometers are presently used for different applications, in particular for very rare or hypothetical events associated with new forms of matter, specifically related to the existence of Dark Matter. In the detection of particles with a semiconductor as target and detector, usually two signals are measured: ionization and heat. The amplification of the therma…
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The cryogenic detectors in the form of bolometers are presently used for different applications, in particular for very rare or hypothetical events associated with new forms of matter, specifically related to the existence of Dark Matter. In the detection of particles with a semiconductor as target and detector, usually two signals are measured: ionization and heat. The amplification of the thermal signal is obtained with the prescriptions from Luke-Neganov effect. The energy deposited in the semiconductor lattice as stable defects in the form of Frenkel pairs at cryogenic temperatures, following the interaction of a dark matter particle, is evaluated and consequences for measured quantities are discussed. This contribution is included in the energy balance of the Luke effect. Applying the present model to germanium and silicon, we found that for the same incident weakly interacting massive particle the energy deposited in defects in germanium is about twice the value for silicon.
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Submitted 9 January, 2013; v1 submitted 6 November, 2012;
originally announced November 2012.
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Transient thermal effects in solid noble gases as materials for the detection of Dark Matter
Authors:
Ionel Lazanu,
Sorina Lazanu
Abstract:
The transient phenomena produced in solid noble gases by the stopping of the recoils resulting from the elastic scattering processes of WIMPs from the galactic halo were modelled, as dependencies of the temperatures of lattice and electronic subsystems on the distance to the recoil's trajectory, and time from its passage. The peculiarities of these thermal transients produced in Ar, Kr and Xe were…
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The transient phenomena produced in solid noble gases by the stopping of the recoils resulting from the elastic scattering processes of WIMPs from the galactic halo were modelled, as dependencies of the temperatures of lattice and electronic subsystems on the distance to the recoil's trajectory, and time from its passage. The peculiarities of these thermal transients produced in Ar, Kr and Xe were analysed for different initial temperatures and WIMP energies, and were correlated with the characteristics of the targets and with the energy loss of the recoils. The results were compared with the thermal spikes produced by the same WIMPs in Si and Ge. In the range of the energy of interest, up to tens of keV for the self-recoil, local phase transitions solid - liquid and even liquid - gas were found possible, and the threshold parameters were established.
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Submitted 6 July, 2011; v1 submitted 9 March, 2011;
originally announced March 2011.
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Modelling the transient processes produced under heavy particle irradiation
Authors:
Sorina Lazanu,
Ionel Lazanu,
Gheorghe Ciobanu
Abstract:
A new model for the thermal spike produced by the nuclear energy loss, as source of transient processes, is derived analytically, for power law dependences of the diffusivity on temperature, as solution of the heat equation. The contribution of the ionizing energy loss to the spike is not included. The range of validity of the model is analysed, and the results are compared with numerical solution…
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A new model for the thermal spike produced by the nuclear energy loss, as source of transient processes, is derived analytically, for power law dependences of the diffusivity on temperature, as solution of the heat equation. The contribution of the ionizing energy loss to the spike is not included. The range of validity of the model is analysed, and the results are compared with numerical solutions obtained in the frame of the previous model of the authors, which takes into account both nuclear and ionization energy losses, as well as the coupling between the two subsystems in crystalline semiconductors. Particular solutions are discussed and the errors induced by these approximations are analysed.
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Submitted 30 November, 2010;
originally announced November 2010.
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Short remarks on possible production of defects in low temperature semiconductor detectors for dark matter physics experiments
Authors:
Ionel Lazanu,
Sorina Lazanu
Abstract:
The nature of dark matter is still an open problem, but there is evidence that a large part of the dark matter in the universe is non-baryonic, non-luminous and non-relativistic and hypothetical Weakly Interacting Massive Particles (WIMPs) are candidates that satisfy all of the above criteria. In order to minimize the ambiguities in the identification of WIMPs' interactions in their search, in m…
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The nature of dark matter is still an open problem, but there is evidence that a large part of the dark matter in the universe is non-baryonic, non-luminous and non-relativistic and hypothetical Weakly Interacting Massive Particles (WIMPs) are candidates that satisfy all of the above criteria. In order to minimize the ambiguities in the identification of WIMPs' interactions in their search, in more experiments, two distinct quantities are simultaneously measured: the ionization and phonon or light from scintillation signals. Silicon and germanium crystals are used in some experiments. In this paper we discuss the production of defects in semiconductors due to WIMP interactions and estimate their contribution in the energy balance. This phenomenon is present at all temperatures, is important in the range of keV energies, but is not taken into consideration in the usual analysis of experimental signals and could introduce errors in identification for WIMPs.
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Submitted 2 July, 2009;
originally announced July 2009.
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Modelling spatial distribution of defects and estimation of electrical degradation of silicon detectors in radiation fields at high luminosity
Authors:
Sorina Lazanu,
Ionel Lazanu
Abstract:
The irradiation represents a useful tool for determining the characteristics of defects in semiconductors as well as a method to evaluate their degradation, fact with important technological consequences. In this contribution, starting from available data on the degradation of silicon detector characteristics in radiation fields, these effects are explained in the frame of a model that supposes…
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The irradiation represents a useful tool for determining the characteristics of defects in semiconductors as well as a method to evaluate their degradation, fact with important technological consequences. In this contribution, starting from available data on the degradation of silicon detector characteristics in radiation fields, these effects are explained in the frame of a model that supposes also the production of the SiFFCD defect due to irradiation. The displacement threshold energies - different for different crystallographic axes, considered as parameters of the model, are established and the results obtained could contribute to clarify these controversial aspects. Predictions of the degradation of electrical parameters (leakage current, effective carrier concentration and effective trapping probabilities for electrons and holes) of DOFZ silicon detectors in the hadron background of the LHC accelerator, supposing operation at -10 grdC are done. The non uniformity of the rate of production of primary defects and of complexes, as a function of depth, for incident particles with low kinetic energy was obtained by simulations in some particular and very simplifying assumptions, suggesting the possible important contribution of the low energy component of the background spectra to detector degradation.
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Submitted 21 November, 2006;
originally announced November 2006.
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Correlation between radiation processes in silicon and long-time degradation of detectors for high energy physics experiments
Authors:
Sorina Lazanu,
Ionel Lazanu
Abstract:
In this contribution, the correlation between fundamental interaction processes induced by radiation in silicon and observable effects which limit the use of silicon detectors in high energy physics experiments is investigated in the frame of a phenomenological model which includes: generation of primary defects at irradiation starting from elementary interactions in silicon; kinetics of defects…
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In this contribution, the correlation between fundamental interaction processes induced by radiation in silicon and observable effects which limit the use of silicon detectors in high energy physics experiments is investigated in the frame of a phenomenological model which includes: generation of primary defects at irradiation starting from elementary interactions in silicon; kinetics of defects, effects at the p-n junction detector level. The effects due to irradiating particles (pions, protons, neutrons), to their flux, to the anisotropy of the threshold energy in silicon, to the impurity concentrations and resistivity of the starting material are investigated as time, fluence and temperature dependences of detector characteristics. The expected degradation of the electrical parameters of detectors in the complex hadron background fields at LHC & SLHC are predicted.
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Submitted 20 November, 2006;
originally announced November 2006.
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Silicon detectors: damage, modelling and expected long-time behaviour in physics experiments at ultra high energy
Authors:
Ionel Lazanu,
Sorina Lazanu
Abstract:
In this contribution, the structural modifications of the material and the degradation of devices is modelled and compared with experimental data for more resistivities, temperatures, crystal orientations and oxygen concentrations, considering the existence of the new primary fourfold coordinated defect, besides the vacancy and the interstitial. Some estimations of the behaviour of detectors in…
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In this contribution, the structural modifications of the material and the degradation of devices is modelled and compared with experimental data for more resistivities, temperatures, crystal orientations and oxygen concentrations, considering the existence of the new primary fourfold coordinated defect, besides the vacancy and the interstitial. Some estimations of the behaviour of detectors in concrete environments at the next generations of high energy physics experiments as LHC, SLHC, VLHC, or ULHC are done.
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Submitted 15 November, 2006;
originally announced November 2006.
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Time dependence of the behaviour of silicon detectors in intense radiation fields and the role of primary point defects
Authors:
Sorina Lazanu,
Ionel Lazanu
Abstract:
The bulk displacement damage in the detector, produces effects at the device level that limits the long time utilisation of detectors as position sensitive devices and thus the lifetime of detector systems. So, the prediction of time behaviour of detectors in hostile radiation environments represents a very useful tool. In this contribution we predict the time degradation of silicon detectors in…
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The bulk displacement damage in the detector, produces effects at the device level that limits the long time utilisation of detectors as position sensitive devices and thus the lifetime of detector systems. So, the prediction of time behaviour of detectors in hostile radiation environments represents a very useful tool. In this contribution we predict the time degradation of silicon detectors in the radiation environments expected in the LHC machine upgrade in luminosity and energy as SLHC, for detectors fabricated from silicon crystals obtained by different growth technologies, in the frame of the model developed by the authors, and which takes into account the contribution of primary defects.
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Submitted 8 November, 2006;
originally announced November 2006.
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An Analysis of the Expected Degradation of Silicon Detectors in the Future Ultra High Energy Facilities
Authors:
Ionel Lazanu,
Sorina Lazanu
Abstract:
In this contribution we discuss how to prepare some possible detectors - only silicon option being considered, for the new era of HEP challenges because the bulk displacement damage in the detector, consequence of irradiation, produces effects at the device level that limit their long time utilisation, increasing the leakage current and the depletion potential, eventually up to breakdown, and th…
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In this contribution we discuss how to prepare some possible detectors - only silicon option being considered, for the new era of HEP challenges because the bulk displacement damage in the detector, consequence of irradiation, produces effects at the device level that limit their long time utilisation, increasing the leakage current and the depletion potential, eventually up to breakdown, and thus affecting the lifetime of detector systems. Physical phenomena that conduce to the degradation of the detector are analysed both at the material and device levels, and some predictions of the time degradation of silicon detectors in the radiation environments expected in the LHC machine upgrade in luminosity and energy as SLHC or VLHC, or at ULHC are given. Possible effects at the detector level after high energy cosmic proton bombardment are investigated as well. Time dependences of these device parameters are studied in conditions of continuous irradiation and the technological options for detector materials are discussed, to obtain devices harder to radiation.
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Submitted 8 November, 2006;
originally announced November 2006.
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Silicon detectors for the next generation of high energy physics experiments: expected degradation
Authors:
I. Lazanu,
S. Lazanu
Abstract:
There exists an enormous interest for the study of very high energy domain in particle physics, both theoretically and experimentally, in the aim to construct a general theory of the fundamental constituents of matter and of their interactions. Until now, semiconductor detectors have widely been used in modern high energy physics experiments. They are elements of the high resolution vertex and t…
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There exists an enormous interest for the study of very high energy domain in particle physics, both theoretically and experimentally, in the aim to construct a general theory of the fundamental constituents of matter and of their interactions. Until now, semiconductor detectors have widely been used in modern high energy physics experiments. They are elements of the high resolution vertex and tracking system, as well as of calorimeters. The main motivation of this work is to discuss how to prepare some possible detectors - only silicon option being considered, for the new era of HEP challenges because the bulk displacement damage in the detector, consequence of irradiation, produces effects at the device level that limit their long time utilisation, increasing the leakage current and the depletion voltage, eventually up to breakdown, and thus affecting the lifetime of detector systems. In this paper, physical phenomena that conduce to the degradation of the detector are discussed and effects are analysed at the device level (leakage current and effective carrier concentration) in the radiation environments expected in the next generation of hadron colliders after LHC, at the next lepton and gamma-gamma colliders, as well as in astroparticle experiments, in conditions of long time continuum irradiations, for different technological options. The predicted results permit a better decision to obtain devices with harder parameters to radiation.
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Submitted 31 December, 2005;
originally announced December 2005.
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The role of primary point defects in the degradation of silicon detectors due to hadron and lepton irradiation
Authors:
I. Lazanu,
S. Lazanu
Abstract:
The principal obstacle to long-time operation of silicon detectors at the highest energies in the next generation of experiments arises from bulk displacement damage which causes significant degradation of their macroscopic properties. The analysis of the behaviour of silicon detectors after irradiation conduces to a good or reasonable agreement between theoretical calculations and experimental…
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The principal obstacle to long-time operation of silicon detectors at the highest energies in the next generation of experiments arises from bulk displacement damage which causes significant degradation of their macroscopic properties. The analysis of the behaviour of silicon detectors after irradiation conduces to a good or reasonable agreement between theoretical calculations and experimental data for the time evolution of the leakage current and effective carrier concentration after lepton and gamma irradiation and large discrepancies after hadron irradiation and this in conditions where a reasonable agreement is obtained between experimental and calculated concentrations of complex defects. In this contribution, we argue that the main discrepancies could be solved naturally considering as primary defects the self-interstitials, classical vacancies and the new predicted fourfold coordinated silicon pseudo-vacancy defects. This new defect is supposed to be introduced uniformly in the bulk during irradiation, has deep energy level(s) in the gap and it is stable in time. Considering the mechanisms of production of defects and their kinetics, it was possible to determine indirectly the characteristics of the SiFFCD defect: energy level in the band gap and cross section for minority carrier capture. In the frame of the model, the effects of primary defects on the degradation of silicon detectors are important in conditions of continuous long time irradiation and /or high fluences.
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Submitted 20 March, 2006; v1 submitted 7 July, 2005;
originally announced July 2005.
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Some possible explanations of the discrepancies in the results of modelling the leakage current of detectors after hadron irradiation
Authors:
S. Lazanu,
I. Lazanu
Abstract:
In this contribution we argue that the main discrepancies between model calculations and experimental data for leakage current after hadron irradiation could be explained considering the contributions of primary defects in silicon: vacancy, interstitial and Si_FFCD defect. The source of discrepancies between data and previous modelling was tentatively attributed to the Si_FFCD defect. Vacancies…
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In this contribution we argue that the main discrepancies between model calculations and experimental data for leakage current after hadron irradiation could be explained considering the contributions of primary defects in silicon: vacancy, interstitial and Si_FFCD defect. The source of discrepancies between data and previous modelling was tentatively attributed to the Si_FFCD defect. Vacancies and interstitials have a major contribution to the current short time after irradiation. If these hypotheses are correct, thus, in conditions of continuous long time irradiation, as e.g. LHC and its upgrades in energy and luminosity, S-LHC and V-LHC respectively, these contributions will represent a major problem.
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Submitted 12 October, 2004;
originally announced October 2004.
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Scenarios about the long-time damage of silicon as material and detectors operating beyond LHC collider conditions
Authors:
Ionel Lazanu,
Sorina Lazanu
Abstract:
For the new hadron collider LHC and some of its updates in luminosity and energy, as SLHC and VLHC, the silicon detectors could represent an important option, especially for the tracking system and calorimetry. The main goal of this paper is to analyse the expected long-time degradation in the bulk of the silicon as material and for silicon detectors, in continuous radiation field, in these host…
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For the new hadron collider LHC and some of its updates in luminosity and energy, as SLHC and VLHC, the silicon detectors could represent an important option, especially for the tracking system and calorimetry. The main goal of this paper is to analyse the expected long-time degradation in the bulk of the silicon as material and for silicon detectors, in continuous radiation field, in these hostile conditions. The behaviour of silicon in relation to various scenarios for upgrade in energy and luminosity is discussed in the frame a phenomenological model developed previously by the authors. Different silicon material parameters resulting from different technologies are considered to evaluate what materials are harder to radiation and consequently could minimise the degradation of device parameters in conditions of continuous long time operation.
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Submitted 23 February, 2004;
originally announced February 2004.
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Role of Oxygen and Carbon Impurities in the Radiation Resistance of Silicon Detectors
Authors:
Sorina Lazanu,
Ionel Lazanu
Abstract:
The influence of oxygen and carbon impurities on the concentrations of defects in silicon for detector uses, in complex fields of radiation (proton cosmic field at low orbits around the Earth, at Large Hadron Collider and at the next generation of accelerators as Super-LHC) is investigated in the frame of the quantitative model developed previously by the authors. The generation rate of primary…
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The influence of oxygen and carbon impurities on the concentrations of defects in silicon for detector uses, in complex fields of radiation (proton cosmic field at low orbits around the Earth, at Large Hadron Collider and at the next generation of accelerators as Super-LHC) is investigated in the frame of the quantitative model developed previously by the authors. The generation rate of primary defects is calculated starting from the projectile - silicon interaction and from recoil energy redistribution in the lattice. The mechanisms of formation of complex defects are explicitly analysed. Vacancy-interstitial annihilation, interstitial and vacancy migration to sinks, divacancy, vacancy and interstitial impurity complex formation and decomposition are considered. Oxygen and carbon impurities present in silicon could monitor the concentration of all stable defects, due to their interaction with vacancies and interstitials. Their role in the mechanisms of formation and decomposition of the following stable defects: VP, VO, V_2, V_2O, C_i, C_iO_i and C_iC_s is studied. The model predictions could be a useful clue in obtaining harder materials for detectors at the new generation of accelerators, for space missions or for industrial applications.
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Submitted 7 October, 2003;
originally announced October 2003.
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Microscopic modelling of defects production and their annealing after irradiation in silicon for HEP particle detectors
Authors:
S. Lazanu,
I. Lazanu,
M. Bruzzi
Abstract:
In this contribution, the production of defects in radiation fields and their evolution toward equilibrium in silicon for detector uses has been modelled. In the quantitative model developed, the generation rate of primary defects is calculated starting from the projectile - silicon interaction and from recoil energy redistribution in the lattice. Vacancy-interstitial annihilation, interstitial…
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In this contribution, the production of defects in radiation fields and their evolution toward equilibrium in silicon for detector uses has been modelled. In the quantitative model developed, the generation rate of primary defects is calculated starting from the projectile - silicon interaction and from recoil energy redistribution in the lattice. Vacancy-interstitial annihilation, interstitial migration to sinks, divacancy and vacancy-impurity complex (VP, VO, V2O, CiOi and CiCs) formation are considered. The results of the model support the experimental available data. The correlation between the initial material parameters, temperature, irradiation and annealing history is established. The model predictions could be a useful clue in obtaining harder materials for detectors at the new generation of accelerators or for space missions.
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Submitted 2 September, 2002;
originally announced September 2002.
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The influence of initial impurities and irradiation conditions on defect production and annealing in silicon for particle detectors
Authors:
Ionel Lazanu,
Sorina Lazanu
Abstract:
Silicon detectors in particle physics experiments at the new accelerators or in space missions for physics goals will be exposed to extreme radiation conditions. The principal obstacles to long-term operation in these environments are the changes in detector parameters, consequence of the modifications in material properties after irradiation. The phenomenological model developed in the present…
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Silicon detectors in particle physics experiments at the new accelerators or in space missions for physics goals will be exposed to extreme radiation conditions. The principal obstacles to long-term operation in these environments are the changes in detector parameters, consequence of the modifications in material properties after irradiation. The phenomenological model developed in the present paper is able to explain quantitatively, without free parameters, the production of primary defects in silicon after particle irradiation and their evolution toward equilibrium, for a large range of generation rates of primary defects. Vacancy-interstitial annihilation, interstitial migration to sinks, divacancy and vacancy-impurity complex (VP, VO, V2O, CiOi and CiCs) formation are taken into account. The effects of different initial impurity concentrations of phosphorus, oxygen and carbon, as well as of irradiation conditions are systematically studied. The correlation between the rate of defect production, the temperature and the time evolution of defect concentrations is also investigated.
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Submitted 7 August, 2002;
originally announced August 2002.
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Predictions about the behaviour of diamond, silicon, SiC and some AIIIBV semiconductor materials in hadron fields
Authors:
Ionel Lazanu,
Sorina Lazanu
Abstract:
The utilisation of crystalline semiconductor materials as detectors and devices operating in high radiation environments, at the future particle colliders, in space applications, in medicine and industry, makes necessary to obtain radiation harder materials. Diamond, SiC and different AIIIBV compounds (GaAs, GaP, InP, InAs, InSb) are possible competitors for silicon to different electronic devic…
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The utilisation of crystalline semiconductor materials as detectors and devices operating in high radiation environments, at the future particle colliders, in space applications, in medicine and industry, makes necessary to obtain radiation harder materials. Diamond, SiC and different AIIIBV compounds (GaAs, GaP, InP, InAs, InSb) are possible competitors for silicon to different electronic devices for the up-mentioned applications. The main goal of this paper is to give theoretical predictions about the behaviour of these semiconductors in hadron fields (pions, protons). The effects of the interaction between the incident particle and the semiconductor are characterised in the present paper both from the point of view of the projectile, the relevant quantity being the energy loss by nuclear interactions, and of the target, using the concentration of primary radiation induced defects on unit particle fluence. Some predictions about the damage induced by hadrons in these materials in possible applications in particle physics and space experiments are done.
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Submitted 23 August, 2000;
originally announced August 2000.
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Annealing of radiation induced defects in silicon in a simplified phenomenological model
Authors:
Sorina Lazanu,
Ionel Lazanu
Abstract:
The concentration of primary radiation induced defects has been previously estimated considering both the explicit mechanisms of the primary interaction between the incoming particle and the nuclei of the semiconductor lattice, and the recoil energy partition between ionisation and displacements, in the frame of the Lindhard theory. The primary displacement defects are vacancies and interstitial…
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The concentration of primary radiation induced defects has been previously estimated considering both the explicit mechanisms of the primary interaction between the incoming particle and the nuclei of the semiconductor lattice, and the recoil energy partition between ionisation and displacements, in the frame of the Lindhard theory. The primary displacement defects are vacancies and interstitials, that are essentially unstable in silicon. They interact via migration, recombination, annihilation or produce other defects. In the present work, the time evolution of the concentration of defects induced by pions in medium and high resistivity silicon for detectors is modelled, after irradiation. In some approximations, the differential equations representing the time evolution processes could be decoupled. The theoretical equations so obtained are solved analytically in some particular cases, with one free parameter, for a wide range of particle fluences and/or for a wide energy range of the incident particles, for different temperatures; the corresponding stationary solutions are also presented.
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Submitted 26 July, 2001; v1 submitted 16 August, 2000;
originally announced August 2000.
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Theoretical calculations of the primary defects induced by pions and protons in SiC
Authors:
Sorina Lazanu,
Ionel Lazanu,
Emilio Borchi,
Mara Bruzzi
Abstract:
In the present work, the bulk degradation of SiC in hadron (pion and proton) fields, in the energy range between 100 MeV and 10 GeV, is characterised theoretically by means of the concentration of primary defects per unit fluence. The results are compared to the similar ones corresponding to diamond, silicon and GaAs.
In the present work, the bulk degradation of SiC in hadron (pion and proton) fields, in the energy range between 100 MeV and 10 GeV, is characterised theoretically by means of the concentration of primary defects per unit fluence. The results are compared to the similar ones corresponding to diamond, silicon and GaAs.
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Submitted 28 March, 2002; v1 submitted 6 July, 2000;
originally announced July 2000.
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Expected behaviour of different semiconductor materials in hadron fields
Authors:
I. Lazanu,
S. Lazanu,
M. Bruzzi
Abstract:
The utilisation of semiconductor materials as detectors and devices operating in high radiation environments, at the future particle colliders, in space applications or in medicine and industry, necessitates to obtain radiation harder materials. A systematic theoretical study has been performed, investigating the interaction of charged hadrons with semiconductor materials and the mechanisms of d…
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The utilisation of semiconductor materials as detectors and devices operating in high radiation environments, at the future particle colliders, in space applications or in medicine and industry, necessitates to obtain radiation harder materials. A systematic theoretical study has been performed, investigating the interaction of charged hadrons with semiconductor materials and the mechanisms of defect creation by irradiation. The mechanisms of the primary interaction of the hadron with the nucleus of the semiconductor lattice have been explicitly modelled and the Lindhard theory of the partition between ionisation and displacements has been considered. The behaviour of silicon, diamond, and some AIIIBV compounds, as GaAs, GaP, InP, InAs, InSb has been investigated. The nuclear energy loss, and the concentration of primary defects induced in the material bulk by the unit hadron fluence have been calculated. The peculiarities of the proton and pion interactions as well as the specific properties of the semiconductor material have been put in evidence.
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Submitted 22 June, 2000;
originally announced June 2000.
