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On the crystalline environment of luminescent Tb$^{3+}$ ions embedded in indium tin oxide thin films: a DFT and Crystal field analysis assessment
Authors:
E. Serquen,
K. Lizárraga,
L. A. Enrique,
F. Bravo,
S. Mishra,
P. LLontop,
P. Venezuela,
L. R. Tessler,
J. A. Guerra
Abstract:
We assess the local symmetry and crystal environment of trivalent terbium ions embedded in an indium tin oxide (ITO) matrix with bixbyite structure. The \mbox{Tb$^{3+}$} ions tend to substitute \mbox{In$^{3+}$} ions in two different cationic sites ($b$ and $d$). Density Functional Theory (DFT) calculations suggest that the \mbox{Tb$^{3+}$} ions are mainly located at $C_2$ symmetry sites relaxing s…
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We assess the local symmetry and crystal environment of trivalent terbium ions embedded in an indium tin oxide (ITO) matrix with bixbyite structure. The \mbox{Tb$^{3+}$} ions tend to substitute \mbox{In$^{3+}$} ions in two different cationic sites ($b$ and $d$). Density Functional Theory (DFT) calculations suggest that the \mbox{Tb$^{3+}$} ions are mainly located at $C_2$ symmetry sites relaxing selection rules and enabling electric dipole transitions, with the $^5\text{D}_4\rightarrow\leftindex^7{\text{F}}_2$ transition being the most intense, providing a red color to the light emission. Photoluminescence emission spectra under UV excitation at \qty{83}{\kelvin} revealed 30 intra-4$f$ transitions, which were assigned to the $\leftindex^7{\text{F}}_J$ ground multiplet of the \mbox{Tb$^{3+}$} ion. Crystal-field analysis shows a strong alignment between calculated and observed energy levels, yielding a standard deviation of $σ=\qty{15.1}{\centi\per\metre}$. We believe these results can help to understand the activation mechanisms of \mbox{Tb$^{3+}$} luminescent centers in transparent conductive oxides, as well as the potential to modulate \mbox{Tb$^{3+}$} emission color through its crystalline environment.
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Submitted 12 February, 2025;
originally announced February 2025.
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Description of Excitonic Absorption Using the Sommerfeld Enhancement Factor and Band-Fluctuations
Authors:
K. Lizárraga,
P. Llontop,
L. A. Enrique-Morán,
M. Piñeiro,
E. Perez,
E. Serquen,
A. Tejada,
F. Ruske,
L. Korte,
J. A. Guerra
Abstract:
One of the challenges of excitonic materials is the accurate determination of the exciton binding energy and bandgap. The difficulty arises from the overlap of the discrete and continuous excitonic absorption at the band edge. Many researches have modeled the shape of the absorption edge of such materials on the Elliott model and its several modifications such as non-parabolic bands, magnetic pote…
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One of the challenges of excitonic materials is the accurate determination of the exciton binding energy and bandgap. The difficulty arises from the overlap of the discrete and continuous excitonic absorption at the band edge. Many researches have modeled the shape of the absorption edge of such materials on the Elliott model and its several modifications such as non-parabolic bands, magnetic potentials and electro-hole-polaron interactions. However, exciton binding energies obtained from measured data often vary strongly depending on the chosen model. Here, we propose an alternative and rather simple approach, which has previously been successful in the determination of the optical bandgap of amorphous, direct and indirect semiconductors, based on the bands-fluctuations (BF) model. In this model, the fluctuations due to disorder, temperature or lattice vibrations give rise to the well known exponential distribution of band tail states (Urbach tails). This analysis results in an analytic equation with 5 parameters only. The binding energies and optical bandgaps of GaAs and the family of tri-halide perovskites ($\textrm{MAPbX}_{3}$), $\textrm{X=Br,I,Cl}$, over a wide range of temperatures, are obtained with this model. The results for the bandgap, linewidth and exciton binding energy are in good agreement with previous reports. Moreover, due to the polar nature of perovskites, the obtained binding energies can be compared with the ones computed with a theoretical model for polar materials via a model proposed by Kane et al. In this model, the exciton is surrounded by a cloud of virtual phonons interacting via the Fr$\ddot{\textrm{o}}$lich interaction. As a consequence, the upper bound for the binding energy of the exciton-polaron system is calculated. Coincidentally, these results are in good agreement with the optical constants obtained with the EBF model.
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Submitted 29 June, 2023;
originally announced June 2023.
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New Optical Models for the Accurate Description of the Electrical Permittivity in Direct and Indirect Semiconductors
Authors:
K. Lizárraga,
L. A. Enrique-Morán,
A. Tejada,
M. Piñeiro,
P. Llontop,
E. Serquen,
E. Perez,
L. Korte,
J. A. Guerra
Abstract:
We propose new models to describe the imaginary part of the electrical permittivity of dielectric and semiconductor materials in the fundamental absorption region. We work out our procedure based on the well-known structure of the Tauc-Lorentz model and the band-fluctuations approach to derive a 5-parameter formula that describes the Urbach, Tauc and high-absorption regions of direct and indirect…
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We propose new models to describe the imaginary part of the electrical permittivity of dielectric and semiconductor materials in the fundamental absorption region. We work out our procedure based on the well-known structure of the Tauc-Lorentz model and the band-fluctuations approach to derive a 5-parameter formula that describes the Urbach, Tauc and high-absorption regions of direct and indirect semiconductors. Main features of the models are the self-consistent generation of the exponential Urbach tail below the bandgap and the incorporation of the Lorentz oscillator behaviour due to electronic transitions above the fundamental region. We apply and test our models on optical data of direct (MAPbI$_{3}$, GaAs and InP), indirect (GaP and c-Si), and amorphous (a-Si) semiconductors, accurately describing the spectra of the imaginary part of the electrical permittivity. Lastly, we compare our models with other similarly inspired models to assess the optical bandgap, Urbach tail and oscillator central resonance energy.
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Submitted 7 December, 2022;
originally announced December 2022.
