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Exploring electrochemical methods for 2D precision stress control in nanoscale devices
Authors:
Di Chen,
Natasa Vasiljevic,
Andrei Sarua,
Martin Kuball,
Krishna C. Balram
Abstract:
Tuning the local film stress (and associated strain) provides a universal route towards exerting dynamic control on propagating fields in nanoscale geometries, and engineering controlled interactions between them. The majority of existing techniques are adapted for engineering either uniform stresses or fixed stress gradients, but there is a need to develop methods that can provide independent pre…
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Tuning the local film stress (and associated strain) provides a universal route towards exerting dynamic control on propagating fields in nanoscale geometries, and engineering controlled interactions between them. The majority of existing techniques are adapted for engineering either uniform stresses or fixed stress gradients, but there is a need to develop methods that can provide independent precision control over the local stress at the nanoscale in the 2D plane. Here, we explore electrochemical absorption of hydrogen in structured palladium thin-film electrodes, and the associated shape-dependent stress to engineer controlled, localized stresses in thin films. We discuss the prospects of this technique for precision dynamic tuning of nanoscale opto-electro-mechanical devices and the development of field-programmable non-volatile set-and-forget architectures. We also outline some of the key challenges that need to be addressed with a view towards incorporating electrochemical stress tuning methods for post-processing foundry devices.
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Submitted 23 May, 2025;
originally announced May 2025.
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Buffer-less Gallium Nitride High Electron Mobility Heterostructures on Silicon
Authors:
Saptarsi Ghosh,
Martin Frentrup,
Alexander M. Hinz,
James W. Pomeroy,
Daniel Field,
David J. Wallis,
Martin Kuball,
Rachel A. Oliver
Abstract:
Thick metamorphic buffers are perceived to be indispensable for the heteroepitaxial integration of III-V semiconductors on silicon substrates with large thermal expansion and lattice mismatches. However, III-nitride buffers in conventional GaN-on-Si high electron mobility transistor (HEMT) heterostructures impose a substantial thermal resistance, throttling heat extraction, which reduces device ef…
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Thick metamorphic buffers are perceived to be indispensable for the heteroepitaxial integration of III-V semiconductors on silicon substrates with large thermal expansion and lattice mismatches. However, III-nitride buffers in conventional GaN-on-Si high electron mobility transistor (HEMT) heterostructures impose a substantial thermal resistance, throttling heat extraction, which reduces device efficiency and lifetime. Herein, bypassing the buffer, we demonstrate the direct growth of GaN after the AlN nucleation layer on silicon by metal-organic vapor phase epitaxy (MOVPE). By varying reactor pressure, we modulate the growth stress in the submicron epilayers and realise threading dislocation densities similar to that in thick buffered structures. We achieve a GaN-to-substrate thermal resistance of (11(+/-)4) ((m^2)K(GW^-1)), an order of magnitude reduction over conventional designs on silicon and one of the lowest on any non-native substrate. AlGaN/AlN/GaN heterojunctions on this platform show a characteristic 2D electron gas (2DEG), the room-temperature Hall-effect mobility of which, at over 2000 (cm^2/(V-s)), rivals the best-reported values. The low-temperature magnetoresistance of this 2DEG shows clear Shubnikov-de-Haas oscillations, a quantum lifetime > 0.180 ps, and tell-tale signatures of spin-splitting. These results may establish a new paradigm for nitride HEMTs, potentially accelerating applications from energy-efficient transistors to fundamental investigations on electron dynamics in this 2D wide-bandgap system.
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Submitted 12 July, 2024;
originally announced July 2024.
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Tuning the Interlayer Microstructure and Residual Stress of Buffer-Free Direct Bonding GaN/Si Heterostructures
Authors:
Yan Zhou,
Shi Zhou,
Shun Wan,
Bo Zou,
Yuxia Feng,
Rui Mei,
Heng Wu,
Pingheng Tan,
Naoteru Shigekawa,
Jianbo Liang,
Martin Kuball
Abstract:
The direct integration of GaN with Si can boost great potential for low-cost, large-scale, and high-power device applications. However, it is still challengeable to directly grow GaN on Si without using thick strain relief buffer layers due to their large lattice and thermal-expansion-coefficient mismatches. In this work, a GaN/Si heterointerface without any buffer layer is successfully fabricated…
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The direct integration of GaN with Si can boost great potential for low-cost, large-scale, and high-power device applications. However, it is still challengeable to directly grow GaN on Si without using thick strain relief buffer layers due to their large lattice and thermal-expansion-coefficient mismatches. In this work, a GaN/Si heterointerface without any buffer layer is successfully fabricated at room temperature via surface activated bonding (SAB). The residual stress states and interfacial microstructures of GaN/Si heterostructures were systematically investigated through micro-Raman spectroscopy and transmission electron microscopy. Compared to the large compressive stress that existed in GaN layers grown-on-Si by MOCVD, a significantly relaxed and uniform small tensile stress was observed in GaN layers bonded-to-Si by SAB; this is mainly ascribed to the amorphous layer formed at the bonding interface. In addition, the interfacial microstructure and stress states of bonded GaN/Si heterointerfaces was found can be significantly tuned by appropriate thermal annealing. This work moves an important step forward directly integrating GaN to the present Si CMOS technology with high quality thin interfaces, and brings great promises for wafer-scale low-cost fabrication of GaN electronics.
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Submitted 2 February, 2023;
originally announced February 2023.
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Gallium nitride phononic integrated circuits for future RF front-ends
Authors:
Mahmut Bicer,
Stefano Valle,
Jacob Brown,
Martin Kuball,
Krishna C. Balram
Abstract:
Achieving monolithic integration of passive acoustic wave devices, in particular RF filters, with active devices such as RF amplifiers and switches, is the optimal solution to meet the challenging communication requirements of mobile devices, especially as we move towards the 6G era. This requires a significant ($\approx$100x) reduction in the size of the RF passives, from mm$^2$ footprints in cur…
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Achieving monolithic integration of passive acoustic wave devices, in particular RF filters, with active devices such as RF amplifiers and switches, is the optimal solution to meet the challenging communication requirements of mobile devices, especially as we move towards the 6G era. This requires a significant ($\approx$100x) reduction in the size of the RF passives, from mm$^2$ footprints in current devices to tens of $μm^2$ in future systems. Applying ideas from integrated photonics, we demonstrate that high frequency (>3 GHz) sound can be efficiently guided in $μ$m-scale gallium nitride(GaN) waveguides by exploiting the strong velocity contrast available in the GaN on silicon carbide (SiC) platform. Given the established use of GaN devices in RF amplifiers, our work opens up the possibility of building monolithically integrated RF front-ends in GaN-on-SiC.
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Submitted 16 December, 2021;
originally announced December 2021.
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Thermal stress modelling of diamond on GaN/III-Nitride membranes
Authors:
Jerome A. Cuenca,
Matthew D. Smith,
Daniel E. Field,
Fabien C-P. Massabuau,
Soumen Mandal,
James Pomeroy,
David J. Wallis,
Rachel A. Oliver,
Iain Thayne,
Martin Kuball,
Oliver A. Williams
Abstract:
Diamond heat-spreaders for gallium nitride (GaN) devices currently depend upon a robust wafer bonding process. Bonding-free membrane methods demonstrate potential, however, chemical vapour deposition (CVD) of diamond directly onto a III-nitride (III-N) heterostructure membrane induces significant thermal stresses. In this work, these thermal stresses are investigated using an analytical approach,…
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Diamond heat-spreaders for gallium nitride (GaN) devices currently depend upon a robust wafer bonding process. Bonding-free membrane methods demonstrate potential, however, chemical vapour deposition (CVD) of diamond directly onto a III-nitride (III-N) heterostructure membrane induces significant thermal stresses. In this work, these thermal stresses are investigated using an analytical approach, a numerical model and experimental validation. The thermal stresses are caused by the mismatch in the coefficient of thermal expansion (CTE) between the GaN/III-N stack, silicon (Si) and the diamond from room temperature to CVD growth temperatures. Simplified analytical wafer bow models underestimate the membrane bow for small sizes while numerical models replicate the stresses and bows with increased accuracy using temperature gradients. The largest tensile stress measured using Raman spectroscopy at room temperature was approximately 1.0 $\pm0.2$ GPa while surface profilometry shows membrane bows as large as \SI{58}{\micro\metre}. This large bow is caused by additional stresses from the Si frame in the initial heating phase which are held in place by the diamond and highlights challenges for any device fabrication using contact lithography. However, the bow can be reduced if the membrane is pre-stressed to become flat at CVD temperatures. In this way, a sufficient platform to grow diamond on GaN/III-N structures without wafer bonding can be realised.
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Submitted 18 February, 2021;
originally announced February 2021.
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High frequency guided mode resonances in mass-loaded, thin film gallium nitride surface acoustic wave devices
Authors:
Stefano Valle,
Manikant Singh,
Martin Cryan,
Martin Kuball,
Krishna C. Balram
Abstract:
We demonstrate high-frequency (> 3 GHz), high quality factor radio frequency (RF) resonators in unreleased thin film gallium nitride (GaN) on sapphire and silicon carbide substrates by exploiting acoustic guided mode (Lamb wave) resonances. The associated energy trapping, due to mass loading from the gold electrodes, allows us to efficiently excite these resonances from a 50 $Ω$ input. The higher…
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We demonstrate high-frequency (> 3 GHz), high quality factor radio frequency (RF) resonators in unreleased thin film gallium nitride (GaN) on sapphire and silicon carbide substrates by exploiting acoustic guided mode (Lamb wave) resonances. The associated energy trapping, due to mass loading from the gold electrodes, allows us to efficiently excite these resonances from a 50 $Ω$ input. The higher phase velocity, combined with lower electrode damping, enables high quality factors with moderate electrode pitch, and provides a viable route towards high-frequency piezoelectric devices. The GaN platform, with its ability to guide and localize high-frequency sound on the surface of a chip with access to high-performance active devices, will serve as a key building block for monolithically integrated RF front-ends.
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Submitted 17 October, 2019;
originally announced October 2019.
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Thick adherent diamond films on AlN with low thermal barrier resistance
Authors:
Soumen Mandal,
Jerome Cuenca,
Fabien Massabuau,
Chao Yuan,
Henry Bland,
James W. Pomeroy,
David Wallis,
Tim Batten,
David Morgan,
Rachel Oliver,
Martin Kuball,
Oliver A. Williams
Abstract:
Growth of $>$100 $μ$m thick diamond layer adherent on aluminium nitride is presented in this work. While thick films failed to adhere on untreated AlN films, hydrogen/nitrogen plasma treated AlN films retained the thick diamond layers. Clear differences in zeta potential measurement confirms the surface modification due to hydrogen/nitrogen plasma treatment. Areal Raman maps showed an increase in…
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Growth of $>$100 $μ$m thick diamond layer adherent on aluminium nitride is presented in this work. While thick films failed to adhere on untreated AlN films, hydrogen/nitrogen plasma treated AlN films retained the thick diamond layers. Clear differences in zeta potential measurement confirms the surface modification due to hydrogen/nitrogen plasma treatment. Areal Raman maps showed an increase in non-diamond carbon in the initial layers of diamond grown on pre-treated AlN. The presence of non-diamond carbon has minimal effect on the interface between diamond and AlN. The surfaces studied with x-ray photoelectron spectroscopy (XPS) revealed a clear distinction between pre-treated and untreated samples. The surface aluminium goes from nitrogen rich environment to an oxygen rich environment after pre-treatment. Cross section transmission electron microscopy shows a clean interface between diamond and AlN. Thermal barrier resistance between diamond and AlN was found to be in the range of 16 m$^2$K/GW which is a large improvement on the current state-of-the-art.
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Submitted 4 July, 2019;
originally announced July 2019.
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Quantifying Temperature-dependent Substrate Loss in GaN-on-Si RF Technology
Authors:
Hareesh Chandrasekar,
Michael J. Uren,
Michael A. Casbon,
Hassan Hirshy,
Abdalla Eblabla,
Khaled Elgaid,
James W. Pomeroy,
Paul J. Tasker,
Martin Kuball
Abstract:
Intrinsic limits to temperature-dependent substrate loss for GaN-on-Si technology, due to the change in resistivity of the substrate with temperature, are evaluated using an experimentally validated device simulation framework. Effect of room temperature substrate resistivity on temperature-dependent CPW line loss at various operating frequency bands are then presented. CPW lines for GaN-on-high r…
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Intrinsic limits to temperature-dependent substrate loss for GaN-on-Si technology, due to the change in resistivity of the substrate with temperature, are evaluated using an experimentally validated device simulation framework. Effect of room temperature substrate resistivity on temperature-dependent CPW line loss at various operating frequency bands are then presented. CPW lines for GaN-on-high resistivity Si are shown to have a pronounced temperature-dependence for temperatures above 150°C and have lower substrate losses for frequencies above the X-band. On the other hand, GaN-on-low resistivity Si is shown to be more temperature-insensitive and have lower substrate losses than even HR-Si for lower operating frequencies. The effect of various CPW geometries on substrate loss is also presented to generalize the discussion. These results are expected to act as a benchmark for temperature dependent substrate loss in GaN-on-Si RF technology.
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Submitted 28 January, 2019;
originally announced January 2019.
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Direct Measurement of the Radiation Pattern of a Nanoantenna Dipole Array
Authors:
J. Stokes,
P. Bassindale,
J. W. Munns,
Y. Yu,
G. S. Hilton,
J. R. Pugh,
A. Yang,
A. Collins,
P. J. Heard,
R. Oulton,
A. Sarua,
M. Kuball,
Z. H. Yuan,
A. J. Orr-Ewing,
M. J. Cryan
Abstract:
Scanning microphotoluminescence is used to characterise the fluorescence from a dye-loaded polymer deposited on a 5 x 5 nanoantenna dipole array. Vertical and horizontal scans show anisotropic emission patterns.
Scanning microphotoluminescence is used to characterise the fluorescence from a dye-loaded polymer deposited on a 5 x 5 nanoantenna dipole array. Vertical and horizontal scans show anisotropic emission patterns.
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Submitted 30 November, 2012;
originally announced November 2012.
