-
External control of GaN band bending using phosphonate self-assembled monolayers
Authors:
T. Auzelle,
F. Ullrich,
S. Hietzschold,
C. Sinito,
S. Brackmann,
W. Kowalsky,
E. Mankel,
O. Brandt,
R. Lovrincic,
S. Fernández-Garrido
Abstract:
We report on the optoelectronic properties of GaN$(0001)$ and $(1\bar{1}00)$ surfaces after their functionalization with phosphonic acid derivatives. To analyze the possible correlation between the acid's electronegativity and the GaN surface band bending, two types of phosphonic acids, n-octylphosphonic acid (OPA) and 1H,1H,2H,2H-perfluorooctanephosphonic acid (PFOPA), are grafted on oxidized GaN…
▽ More
We report on the optoelectronic properties of GaN$(0001)$ and $(1\bar{1}00)$ surfaces after their functionalization with phosphonic acid derivatives. To analyze the possible correlation between the acid's electronegativity and the GaN surface band bending, two types of phosphonic acids, n-octylphosphonic acid (OPA) and 1H,1H,2H,2H-perfluorooctanephosphonic acid (PFOPA), are grafted on oxidized GaN$(0001)$ and GaN$(1\bar{1}00)$ layers as well as on GaN nanowires. The resulting hybrid inorganic/organic heterostructures are investigated by X-ray photoemission and photoluminescence spectroscopy. The GaN work function is changed significantly by the grafting of phosphonic acids, evidencing the formation of dense self-assembled monolayers. Regardless of the GaN surface orientation, both types of phosphonic acids significantly impact the GaN surface band bending. A dependence on the acids' electronegativity is, however, only observed for the oxidized GaN$(1\bar{1}00)$ surface, indicating a relatively low density of surface states and a favorable band alignment between the surface oxide and acids' electronic states. Regarding the optical properties, the covalent bonding of PFOPA and OPA on oxidized GaN layers and nanowires significantly affect their external quantum efficiency, especially in the nanowire case due to the large surface-to-volume ratio. The variation in the external quantum efficiency is related to the modication of both the internal electric fields and surface states. These results demonstrate the potential of phosphonate chemistry for the surface functionalization of GaN, which could be exploited for selective sensing applications.
△ Less
Submitted 25 September, 2020;
originally announced September 2020.
-
Towards Highly Efficient Polymer Fiber Laser Sources for Integrated Photonic Sensors
Authors:
Simon Spelthann,
Stefanie Unland,
Jonas Thiem,
Florian Jakobs,
Jana Kielhorn,
Pen Yiao Ang,
Hans-Hermann Johannes,
Dietmar Kracht,
Joerg Neumann,
Axel Ruehl,
Wolfgang Kowalsky,
Detlev Ristau
Abstract:
Lab-on-a-Chip (LoC) devices combining microfluidic analyte provision with integrated optical analysis are highly desirable for several applications in biological oder medical sciences. While the microfluidic approach is already broadly adressed, yet some work needs to be done regarding the integrated optics, especially provision of highly integrable laser sources. Polymer optical fiber (POF) laser…
▽ More
Lab-on-a-Chip (LoC) devices combining microfluidic analyte provision with integrated optical analysis are highly desirable for several applications in biological oder medical sciences. While the microfluidic approach is already broadly adressed, yet some work needs to be done regarding the integrated optics, especially provision of highly integrable laser sources. Polymer optical fiber (POF) lasers represent an alignment-free, rugged and flexible technology platform. Additionally, POFs are intrinsically compatible to polymer microfluidic devices. Home-made Rhodamine B (RB) doped POFs were characterized with experimental and numerical parameter studies on their lasing potential. High output energies of 1.65mJ, high slope efficiencies of 56% and 50%-lifetimes of < 900 k shots were extracted from RB:POFs. Furthermore, RB:POFs show broad spectral tunability over several tens of nanometers. A route to optimize polymer fiber lasers is revealed providing functionality for a broad range of LoC devices. Spectral tunability, high efficiencies and output energies enable a broad field of LoC applications.
△ Less
Submitted 18 June, 2020;
originally announced June 2020.
-
Electronic properties of air-exposed GaN$(1\bar{1}00)$ and $(0001)$ surfaces after several device processing compatible cleaning steps
Authors:
Thomas Auzelle,
Florian Ullrich,
Sebastian Hietzschold,
Stefan Brackmann,
Sabina Hillebrandt,
Wolfgang Kowalsky,
Eric Mankel,
Robert Lovrincic,
Sergio Fernández-Garrido
Abstract:
We report on the electronic properties of GaN$(1\bar{1}00)$ and $(0001)$ surfaces after three different and subsequent device processing compatible cleaning steps: HCl etching, annealing at $400$ $^\circ$C in N$_2$ atmosphere, and O$_2$ plasma exposure. The surface electronic properties are quantified, in the dark and under ultraviolet illumination, using X-ray photoelectron spectroscopy and a Kel…
▽ More
We report on the electronic properties of GaN$(1\bar{1}00)$ and $(0001)$ surfaces after three different and subsequent device processing compatible cleaning steps: HCl etching, annealing at $400$ $^\circ$C in N$_2$ atmosphere, and O$_2$ plasma exposure. The surface electronic properties are quantified, in the dark and under ultraviolet illumination, using X-ray photoelectron spectroscopy and a Kelvin probe. We find that the cleaning steps largely affect the work function and the band bending of both GaN orientations. These modifications are attributed to the presence of different surface states as well as to the formation of adsorbates building up distinct surface dipoles. Besides these results, we detect that under ultraviolet illumination the work function of the surfaces exposed to HCl decreases by at least $0.2$ eV without screening of the band bending. We thus attribute the observed surface photovoltage to a photo-induced modification of the surface dipole. Overall, these results emphasize the strong dependence of the electronic properties of air-exposed GaN surfaces on adsorbates. As a result, we advocate the use of the common cleaning steps analyzed here to re-initialize at will GaN$(1\bar{1}00)$ and $(0001)$ surfaces into pre-defined states.
△ Less
Submitted 9 August, 2019;
originally announced August 2019.
