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Weak transcription factor clustering at binding sites can facilitate information transfer from molecular signals
Authors:
Tamara Mijatović,
Aimée R. Kok,
Jos W. Zwanikken,
Marianne Bauer
Abstract:
Transcription factor concentrations provide signals to cells that allow them to regulate gene expression to make correct cell fate decisions. Calculations for noise bounds in gene regulation suggest that clustering or cooperative binding of transcription factors decreases signal-to-noise ratios at binding sites. However, clustering of transcription factor molecules around binding sites is frequent…
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Transcription factor concentrations provide signals to cells that allow them to regulate gene expression to make correct cell fate decisions. Calculations for noise bounds in gene regulation suggest that clustering or cooperative binding of transcription factors decreases signal-to-noise ratios at binding sites. However, clustering of transcription factor molecules around binding sites is frequently observed. We develop two complementary models for clustering transcription factors at binding site sensors that allow us to study information transfer from a signal to a variable relevant to development, namely future cell fates, on the example of the signal morphogen Bicoid in early fly development. We find that weak cooperativity or clustering can allow for maximal information transfer, especially about the relevant variable. Why clustering is beneficial for transfer depends on how long the binding site sensor measures the signal before affecting downstream gene expression: for short measurements, clustering allows for the implementation of a switch, while for long measurements, weak clustering allows the sensor to access maximal developmental information provided in a nonlinear signal. Finally, we find that clustering can facilitate binding site sensors to achieve an optimal bound to molecular sensing, the information bottleneck (IB) bound. This IB optimality appears consistent with a biologically intuitive optimization.
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Submitted 12 May, 2025;
originally announced May 2025.
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Radiation Hard 3D Silicon Pixel Sensors for use in the ATLAS Detector at the HL-LHC
Authors:
Andreas Løkken Heggelund,
Simon Huiberts,
Ole Dorholt,
Alexander Lincoln Read,
Ole Røhne,
Heidi Sandaker,
Magne Lauritzen,
Bjarne Stugu,
Angela Kok,
Ozhan Koybasi,
Marco Povoli,
Marco Bomben,
Jörn Lange,
Andre Rummler
Abstract:
The High Luminosity LHC (HL-LHC) upgrade requires the planned Inner Tracker (ITk) of the ATLAS detector to tolerate extremely high radiation doses. Specifically, the innermost parts of the pixel system will have to withstand radiation fluences above $1\times10^{16}$ $n_{eq}cm^{-2}$. Novel 3D silicon pixel sensors offer a superior radiation tolerance compared to conventional planar pixel sensors, a…
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The High Luminosity LHC (HL-LHC) upgrade requires the planned Inner Tracker (ITk) of the ATLAS detector to tolerate extremely high radiation doses. Specifically, the innermost parts of the pixel system will have to withstand radiation fluences above $1\times10^{16}$ $n_{eq}cm^{-2}$. Novel 3D silicon pixel sensors offer a superior radiation tolerance compared to conventional planar pixel sensors, and are thus excellent candidates for the innermost parts of the ITk. This paper presents studies of 3D pixel sensors with pixel size $50 \times 50$ $μm^2$ mounted on the RD53A prototype readout chip. Following a description of the design and fabrication steps, Test Beam results are presented for unirradiated as well as heavily irradiated sensors. For particles passing at perpendicular incidence, it is shown that average efficiencies above 96% are reached for sensors exposed to fluences of $1\times10^{16}$ $n_{eq}cm^{-2}$ when biased to 80 $V$.
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Submitted 21 February, 2022;
originally announced February 2022.
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Beam tests of silicon pixel 3D-sensors developed at SINTEF
Authors:
Ole Dorholt,
Thor-Erik Hansen,
Andreas Heggelund,
Angela Kok,
Nicola Pacifico,
Ole Rohne,
Heidi Sandaker,
Bjarne Stugu,
Zongchang Yang,
Marco Bomben,
Andre Rummler,
Jens Weingarten
Abstract:
For the purpose of withstanding very high radiation doses, silicon pixel sensors with a 3D electrode geometry are being developed. Detectors of this kind are highly interesting for harch radiation environments such as expected in the High Luminosity LHC, but also for space physics and medical applications. In this paper, prototype sensors developed at SINTEF are presented and results from tests in…
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For the purpose of withstanding very high radiation doses, silicon pixel sensors with a 3D electrode geometry are being developed. Detectors of this kind are highly interesting for harch radiation environments such as expected in the High Luminosity LHC, but also for space physics and medical applications. In this paper, prototype sensors developed at SINTEF are presented and results from tests in a pion beam at CERN are given. These tests shows that these 3D sensors perform as expected with full efficiency at bias voltages between 5 and 15V.
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Submitted 5 August, 2018; v1 submitted 21 June, 2018;
originally announced June 2018.
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Thin silicon strip detectors for beam monitoring in Micro-beam Radiation Therapy
Authors:
Marco Povoli,
Enver Alagoz,
Alberto Bravin,
Iwan Cornelius,
Elke Bräuer-Krisch,
Pauline Fournier,
Thor-Erik Hansen,
Angela Kok,
Michael Lerch,
Edouard Monakhov,
John Morse,
Marco Petasecca,
Herwig Requardt,
Anatoly Rosenfeld,
Dieter Röhrich,
Heidi Sandaker,
Murielle Salomé,
Bjarne Stugu
Abstract:
Microbeam Radiation Therapy (MRT) is an emerging cancer treatment that is currently being developed at the European Synchrotron Radiation Facility (ESRF) in Grenoble, France. This technique uses a highly collimated and fractionated X-ray beam array with extremely high dose rate and very small divergence, to benefit from the dose-volume effect, thus sparing healthy tissue. In case of any beam anoma…
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Microbeam Radiation Therapy (MRT) is an emerging cancer treatment that is currently being developed at the European Synchrotron Radiation Facility (ESRF) in Grenoble, France. This technique uses a highly collimated and fractionated X-ray beam array with extremely high dose rate and very small divergence, to benefit from the dose-volume effect, thus sparing healthy tissue. In case of any beam anomalies and system malfunctions, special safety measures must be installed, such as an emergency safety shutter that requires continuous monitoring of the beam intensity profile. Within the 3DMiMic project, a novel silicon strip detector that can tackle the special features of MRT, such as the extremely high spatial resolution and dose rate, has been developed to be part of the safety shutter system. The first prototypes have been successfully fabricated, and experiments aimed to demonstrate their suitability for this unique application have been performed. Design, fabrication and the experimental results as well as any identified inadequacies for future optimisation are reported and discussed in this paper.
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Submitted 29 September, 2015;
originally announced September 2015.
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Testbeam and Laboratory Characterization of CMS 3D Pixel Sensors
Authors:
M. Bubna,
E. Alagoz,
A. Krzywda,
O. Koybasi,
K. Arndt,
D. Bortoletto,
I. Shipsey,
G. Bolla,
A. Kok,
T. -E. Hansen,
T. A. Hansen,
G. U. Jensen,
J. M. Brom,
M. Boscardin,
J. Chramowicz,
J. Cumalat,
G. F. Dalla Betta,
M. Dinardo,
A. Godshalk,
M. Jones,
M. D. Krohn,
A. Kumar,
C. M. Lei,
L. Moroni,
L. Perera
, et al. (10 additional authors not shown)
Abstract:
The pixel detector is the innermost tracking device in CMS, reconstructing interaction vertices and charged particle trajectories. The sensors located in the innermost layers of the pixel detector must be upgraded for the ten-fold increase in luminosity expected with the High- Luminosity LHC (HL-LHC) phase. As a possible replacement for planar sensors, 3D silicon technology is under consideration…
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The pixel detector is the innermost tracking device in CMS, reconstructing interaction vertices and charged particle trajectories. The sensors located in the innermost layers of the pixel detector must be upgraded for the ten-fold increase in luminosity expected with the High- Luminosity LHC (HL-LHC) phase. As a possible replacement for planar sensors, 3D silicon technology is under consideration due to its good performance after high radiation fluence. In this paper, we report on pre- and post- irradiation measurements for CMS 3D pixel sensors with different electrode configurations. The effects of irradiation on electrical properties, charge collection efficiency, and position resolution of 3D sensors are discussed. Measurements of various test structures for monitoring the fabrication process and studying the bulk and surface properties, such as MOS capacitors, planar and gate-controlled diodes are also presented.
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Submitted 30 April, 2014; v1 submitted 25 February, 2014;
originally announced February 2014.
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Test Beam Results of 3D Silicon Pixel Sensors for the ATLAS upgrade
Authors:
ATLAS 3D Collaboration,
P. Grenier,
G. Alimonti,
M. Barbero,
R. Bates,
E. Bolle,
M. Borri,
M. Boscardin,
C. Buttar,
M. Capua,
M. Cavalli-Sforza,
M. Cobal,
A. Cristofoli,
G-F. Dalla Betta,
G. Darbo,
C. Da Vià,
E. Devetak,
B. DeWilde,
B. Di Girolamo,
D. Dobos,
K. Einsweiler,
D. Esseni,
S. Fazio,
C. Fleta,
J. Freestone
, et al. (68 additional authors not shown)
Abstract:
Results on beam tests of 3D silicon pixel sensors aimed at the ATLAS Insertable-B-Layer and High Luminosity LHC (HL-LHC)) upgrades are presented. Measurements include charge collection, tracking efficiency and charge sharing between pixel cells, as a function of track incident angle, and were performed with and without a 1.6 T magnetic field oriented as the ATLAS Inner Detector solenoid field. Sen…
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Results on beam tests of 3D silicon pixel sensors aimed at the ATLAS Insertable-B-Layer and High Luminosity LHC (HL-LHC)) upgrades are presented. Measurements include charge collection, tracking efficiency and charge sharing between pixel cells, as a function of track incident angle, and were performed with and without a 1.6 T magnetic field oriented as the ATLAS Inner Detector solenoid field. Sensors were bump bonded to the front-end chip currently used in the ATLAS pixel detector. Full 3D sensors, with electrodes penetrating through the entire wafer thickness and active edge, and double-sided 3D sensors with partially overlapping bias and read-out electrodes were tested and showed comparable performance.
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Submitted 21 January, 2011;
originally announced January 2011.