-
Dielectrophoresis-Enhanced Graphene Field-Effect Transistors for Nano-Analyte Sensing
Authors:
Nezhueyotl Izquierdo,
Ruixue Li,
Peter R. Christenson,
Sang-Hyun Oh,
Steven J. Koester
Abstract:
Dielectrophoretic (DEP) sensing is an extremely important sensing modality that enables the rapid capture and detection of polarizable particles of nano-scale size. This makes it a versatile tool for applications in medical diagnostics, environmental monitoring, and materials science. Because DEP relies upon the creation of sharp electrode edges, its sensitivity is fundamentally limited by the ele…
▽ More
Dielectrophoretic (DEP) sensing is an extremely important sensing modality that enables the rapid capture and detection of polarizable particles of nano-scale size. This makes it a versatile tool for applications in medical diagnostics, environmental monitoring, and materials science. Because DEP relies upon the creation of sharp electrode edges, its sensitivity is fundamentally limited by the electrode thickness. Graphene, with its monolayer thickness, enables scaling of the DEP force, allowing trapping of particles at graphene edges at ultra-low voltages. However, to date, this enhanced trapping efficiency of graphene has not been translated into an effective sensing geometry. Here, we demonstrate the expansion of graphene DEP trapping capability into a graphene field effect transistor (GFET) geometry that allows the trapped particles to be electrically detected. This four-terminal multi-functional hybrid device structure operates in three distinct modes: DEP, GFET, and DEP-GFET. By segmenting the channel of the GFET into multiple parallel channels, greatly increased density of particle trapping is demonstrated using fluorescence microscopy analysis. We show further enhancement of the trapping efficiency using engineered "nano-sites," which are holes in the graphene with size on the order of 200-300 nm. Scanning electron microscope analysis of immobilized gold nanoparticles (AuNPs) shows trapping efficiency >90% for properly engineered nano-sites. Using nano-site trapping, we also demonstrate real-time, rapid electrical sensing of AuNPs, with >2% current change occurring in 4.1 seconds, as well as rapid sensing of a variety of biomolecule-coated nanoparticles. This work shows that graphene DEP is an effective platform for nanoparticle and bio-molecule sensing that overcomes diffusion-limited and Brownian motion-based interactions.
△ Less
Submitted 16 December, 2024;
originally announced December 2024.
-
Fast and Facile Synthesis Route to Epitaxial Oxide Membrane Using a Sacrificial Layer
Authors:
Shivasheesh Varshney,
Sooho Choo,
Liam Thompson,
Zhifei Yang,
Jay Shah,
Jiaxuan Wen,
Steven J. Koester,
K. Andre Mkhoyan,
Alexander McLeod,
Bharat Jalan
Abstract:
The advancement in thin-film exfoliation for synthesizing oxide membranes has opened up new possibilities for creating artificially-assembled heterostructures with structurally and chemically incompatible materials. The sacrificial layer method is a promising approach to exfoliate as-grown films from a compatible material system, allowing their integration with dissimilar materials. Nonetheless, t…
▽ More
The advancement in thin-film exfoliation for synthesizing oxide membranes has opened up new possibilities for creating artificially-assembled heterostructures with structurally and chemically incompatible materials. The sacrificial layer method is a promising approach to exfoliate as-grown films from a compatible material system, allowing their integration with dissimilar materials. Nonetheless, the conventional sacrificial layers often possess intricate stoichiometry, thereby constraining their practicality and adaptability, particularly when considering techniques like Molecular Beam Epitaxy (MBE). This is where easy-to-grow binary alkaline earth metal oxides with a rock salt crystal structure are useful. These oxides, which include (Mg, Ca, Sr, Ba)O, can be used as a sacrificial layer covering a much broader range of lattice parameters compared to conventional sacrificial layers and are easily dissolvable in deionized water. In this study, we show the epitaxial growth of single-crystalline perovskite SrTiO3 (STO) on sacrificial layers consisting of crystalline SrO, BaO, and Ba1-xCaxO films, employing a hybrid MBE method. Our results highlight the rapid (< 5 minutes) dissolution of the sacrificial layer when immersed in deionized water, facilitating the fabrication of millimeter-sized STO membranes. Using high-resolution x-ray diffraction, atomic-force microscopy, scanning transmission electron microscopy, impedance spectroscopy, and scattering-type near-field optical microscopy (SNOM), we demonstrate epitaxial STO membranes with bulk-like intrinsic dielectric properties. The employment of alkaline earth metal oxides as sacrificial layers is likely to simplify membrane synthesis, particularly with MBE, thus expanding research possibilities.
△ Less
Submitted 19 November, 2023;
originally announced November 2023.
-
Free-Standing Epitaxial SrTiO$_3$ Nanomembranes via Remote Epitaxy using Hybrid Molecular Beam Epitaxy
Authors:
Hyojin Yoon,
Tristan K. Truttmann,
Fengdeng Liu,
Bethany E. Matthews,
Sooho Choo,
Qun Su,
Vivek Saraswat,
Sebastian Manzo,
Michael S. Arnold,
Mark E. Bowden,
Jason K. Kawasaki,
Steven J. Koester,
Steven R. Spurgeon,
Scott A. Chambers,
Bharat Jalan
Abstract:
The epitaxial growth of functional materials using a substrate with a graphene layer is a highly desirable method for improving structural quality and obtaining free-standing epitaxial nano-membranes for scientific study, applications, and economical reuse of substrates. However, the aggressive oxidizing conditions typically employed to grow epitaxial perovskite oxides can damage graphene. Here, w…
▽ More
The epitaxial growth of functional materials using a substrate with a graphene layer is a highly desirable method for improving structural quality and obtaining free-standing epitaxial nano-membranes for scientific study, applications, and economical reuse of substrates. However, the aggressive oxidizing conditions typically employed to grow epitaxial perovskite oxides can damage graphene. Here, we demonstrate a technique based on hybrid molecular beam epitaxy that does not require an independent oxygen source to achieve epitaxial growth of complex oxides without damaging the underlying graphene. The technique produces films with self-regulating cation stoichiometry control and epitaxial orientation to the oxide substrate. Furthermore, the films can be exfoliated and transferred to foreign substrates while leaving the graphene on the original substrate. These results open the door to future studies of previously unattainable free-standing nano-membranes grown in an adsorption-controlled manner by hybrid molecular beam epitaxy, and has potentially important implications for the commercial application of perovskite oxides in flexible electronics.
△ Less
Submitted 17 June, 2022;
originally announced June 2022.
-
An analytic virtual-source-based current-voltage model for ultra-thin black phosphorus field-effect transistors
Authors:
Elahe Yarmoghaddam,
Nazila Haratipour,
Steven J. Koester,
Shaloo Rakheja
Abstract:
In this paper, we develop an analytic physics-based model to describe current conduction in ultra-thin black phosphorus (BP) field-effect transistors (FETs). The model extends the concept of virtual source charge calculation to capture the effect of both hole and electron charges for ambipolar transport characteristics. The model comprehends the in-plane band-structure anisotropy in BP, as well as…
▽ More
In this paper, we develop an analytic physics-based model to describe current conduction in ultra-thin black phosphorus (BP) field-effect transistors (FETs). The model extends the concept of virtual source charge calculation to capture the effect of both hole and electron charges for ambipolar transport characteristics. The model comprehends the in-plane band-structure anisotropy in BP, as well as the asymmetry in electron and hole current conduction characteristics. The model also includes the effect of Schottky-type source/drain contact resistances, which are voltage-dependent and can significantly limit current conduction in the on-state in BP FETs. Model parameters are extracted using measured data of back-gated BP transistors with gate lengths of 1000 nm and 300 nm with BP thickness of 7.3 nm and 8.1 nm, and for the temperature range of 180 K to 298 K. Compared to previous BP models that are validated only for room-temperature and near-equilibrium bias conditions (low drain-source voltage), we demonstrate excellent agreement between the data and model over a broad range of bias and temperature values. The model is also validated against numerical TCAD data of top-gated BP transistors with a channel length of 300 nm. The model is implemented in Verilog-A and the capability of the model to handle both dc and transient circuit simulations is demonstrated using SPECTRE. The model not only provides a physical insight into technology-device interaction in BP transistors, but can also be used to design and optimize BP-based circuits using a standard hierarchical circuit simulator.
△ Less
Submitted 13 November, 2018; v1 submitted 9 November, 2018;
originally announced November 2018.
-
Using Programmable Graphene Channels as Weights in Spin-Diffusive Neuromorphic Computing
Authors:
Jiaxi Hu,
Gordon Stecklein,
Yoska Anugrah,
Paul A. Crowell,
Steven J. Koester
Abstract:
A graphene-based spin-diffusive (GrSD) neural network is presented in this work that takes advantage of the locally tunable spin transport of graphene and the non-volatility of nanomagnets. By using electrostatically gated graphene as spintronic synapses, a weighted summation operation can be performed in the spin domain while the weights can be programmed using circuits in the charge domain. Four…
▽ More
A graphene-based spin-diffusive (GrSD) neural network is presented in this work that takes advantage of the locally tunable spin transport of graphene and the non-volatility of nanomagnets. By using electrostatically gated graphene as spintronic synapses, a weighted summation operation can be performed in the spin domain while the weights can be programmed using circuits in the charge domain. Four-component spin/charge circuit simulations coupled to magnetic dynamics are used to show the feasibility of the neuron-synapse functionality and quantify the analog weighting capability of the graphene under different spin relaxation mechanisms. By realizing transistor-free weight implementation, the graphene spin-diffusive neural network reduces the energy consumption to 0.08-0.32 fJ per cell-synapse and achieves significantly better scalability compared to its digital counterparts, particularly as the number and bit accuracy of the synapses increases.
△ Less
Submitted 1 December, 2017;
originally announced December 2017.
-
Band Alignment of 2D Semiconductors for Designing Heterostructures with Momentum Space Matching
Authors:
V. Ongun Özçelik,
Javad G. Azadani,
Ce Yang,
Steven J. Koester,
Tony Low
Abstract:
We present a comprehensive study of the band alignments of two-dimensional (2D) semiconducting materials and highlight the possibilities of forming momentum-matched type I, II and III heterojunctions; an enticing possibility being atomic heterostructures where the constituent monolayers have band edges at the zone center. Our study, which includes the Group IV and III-V compound monolayer material…
▽ More
We present a comprehensive study of the band alignments of two-dimensional (2D) semiconducting materials and highlight the possibilities of forming momentum-matched type I, II and III heterojunctions; an enticing possibility being atomic heterostructures where the constituent monolayers have band edges at the zone center. Our study, which includes the Group IV and III-V compound monolayer materials, Group V elemental monolayer materials, transition metal dichalcogenides (TMD) and transition metal trichalcogenides (TMT) reveals that almost half of these materials have conduction and/or valence band edges residing at the zone center. Using first-principles density functional calculations, we present the type of the heterojunction for 903 different possible combination of these 2D materials which establishes a periodic table of heterojunctions.
△ Less
Submitted 23 March, 2016; v1 submitted 8 March, 2016;
originally announced March 2016.
-
Waveguide-integrated black phosphorus photodetector with high responsivity and low dark current
Authors:
Nathan Youngblood,
Che Chen,
Steven J. Koester,
Mo Li
Abstract:
Layered two-dimensional materials have shown novel optoelectronic properties and are well suited to be integrated in planar photonic circuits. For example, graphene has been utilized for wideband photodetection. Because graphene lacks a band gap, however, graphene photodetectors suffer from very high dark current. In contrast, layered black phosphorous, the latest addition to the family of 2D mate…
▽ More
Layered two-dimensional materials have shown novel optoelectronic properties and are well suited to be integrated in planar photonic circuits. For example, graphene has been utilized for wideband photodetection. Because graphene lacks a band gap, however, graphene photodetectors suffer from very high dark current. In contrast, layered black phosphorous, the latest addition to the family of 2D materials, is well-suited for photodetector applications due to its narrow but finite band gap. Here, we demonstrate a gated multilayer black phosphorus photodetector integrated on a silicon photonic waveguide operating in the near-infrared telecom band. In a significant advantage over graphene devices, black phosphorus photodetectors can operate under a bias with very low dark current and attain intrinsic responsivity up to 135 mA/W and 657 mA/W in 11.5nm and 100 nm thick devices, respectively, at room temperature. The photocurrent is dominated by the photovoltaic effect with a high response bandwidth exceeding 3 GHz.
△ Less
Submitted 11 December, 2014; v1 submitted 23 September, 2014;
originally announced September 2014.
-
Multifunctional graphene optical modulator and photodetector integrated on silicon waveguides
Authors:
Nathan Youngblood,
Yoska Anugrah,
Rui Ma,
Steven J. Koester,
Mo Li
Abstract:
For optical communication, information is converted between optical and electrical signal domains at a high rate. The devices to achieve such a conversion are various types of electro-optical modulators and photodetectors. These two types of optoelectronic devices, equally important, require different materials and consequently it has been challenging to realize both using a single material combin…
▽ More
For optical communication, information is converted between optical and electrical signal domains at a high rate. The devices to achieve such a conversion are various types of electro-optical modulators and photodetectors. These two types of optoelectronic devices, equally important, require different materials and consequently it has been challenging to realize both using a single material combination, especially in a way that can be integrated on the ubiquitous silicon platform. Graphene, with its gapless band structure, stands out as a unique optoelectronic material that allows both photodetection and optical modulation. Here, we demonstrate a single graphene-based device that simultaneously provides both efficient optical modulation and photodetection. The graphene device is integrated on a silicon waveguide and is tunable with a gate made from another layer of graphene to achieve near-infrared photodetection responsivity of 57 mA/W and modulation depth of 64%. This novel multifunctional device may lead to many unprecedented optoelectronic applications.
△ Less
Submitted 27 February, 2014;
originally announced February 2014.
-
Optical absorption in graphene integrated on silicon waveguides
Authors:
Huan Li,
Yoska Anugrah,
Steven J. Koester,
Mo Li
Abstract:
To fully utilize graphene's remarkable optical properties for optoelectronic applications, it needs to be integrated in planar photonic systems. Here, we demonstrate integration of graphene on silicon photonic circuits and precise measurement of the optical absorption coefficient in a graphene/waveguide hybrid structure. A method based on Mach-Zehnder interferometry is employed to achieve high mea…
▽ More
To fully utilize graphene's remarkable optical properties for optoelectronic applications, it needs to be integrated in planar photonic systems. Here, we demonstrate integration of graphene on silicon photonic circuits and precise measurement of the optical absorption coefficient in a graphene/waveguide hybrid structure. A method based on Mach-Zehnder interferometry is employed to achieve high measurement precision and consistency, yielding a maximal value of absorption coefficient of 0.2 dB/μm when graphene is located directly on top of the waveguide. The results agree with theoretical model utilizing the universal ac conductivity in graphene. Our work provides an important guide for the design and optimization of integrated graphene optoelectronic devices.
△ Less
Submitted 17 May, 2012;
originally announced May 2012.
-
High-speed waveguide-coupled graphene-on-graphene optical modulators
Authors:
Steven J. Koester,
Mo Li
Abstract:
An electro-absorption optical modulator concept based upon a dual-graphene layer is presented. The device consists of a silicon-on-insulator waveguide upon which two graphene layers reside, separated by a thin insulating region. The lower graphene acts as a tunable absorber, while the upper layer functions as a transparent gate electrode. Calculations based upon realistic graphene material propert…
▽ More
An electro-absorption optical modulator concept based upon a dual-graphene layer is presented. The device consists of a silicon-on-insulator waveguide upon which two graphene layers reside, separated by a thin insulating region. The lower graphene acts as a tunable absorber, while the upper layer functions as a transparent gate electrode. Calculations based upon realistic graphene material properties show that 3-dB bandwidths over 100 GHz (30 GHz) are possible at near- (λ=1.55 μm) and mid- (λ=3.5μm) infrared bands. The effect of background doping and potential fluctuations on the bandwidth, modulation depth and insertion loss are also quantified.
△ Less
Submitted 21 February, 2012;
originally announced February 2012.
