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Manipulating chiral-spin transport with ferroelectric polarization
Authors:
Xiaoxi Huang,
Xianzhe Chen,
Yuhang Li,
John Mangeri,
Hongrui Zhang,
Maya Ramesh,
Hossein Taghinejad,
Peter Meisenheimer,
Lucas Caretta,
Sandhya Susarla,
Rakshit Jain,
Christoph Klewe,
Tianye Wang,
Rui Chen,
Cheng-Hsiang Hsu,
Hao Pan,
Jia Yin,
Padraic Shafer,
Ziqiang Qiu,
Davi R. Rodrigues,
Olle Heinonen,
Dilip Vasudevan,
Jorge Iniguez,
Darrell G. Schlom,
Sayeef Salahuddin
, et al. (6 additional authors not shown)
Abstract:
A collective excitation of the spin structure in a magnetic insulator can transmit spin-angular momentum with negligible dissipation. This quantum of a spin wave, introduced more than nine decades ago, has always been manipulated through magnetic dipoles, (i.e., timereversal symmetry). Here, we report the experimental observation of chiral-spin transport in multiferroic BiFeO3, where the spin tran…
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A collective excitation of the spin structure in a magnetic insulator can transmit spin-angular momentum with negligible dissipation. This quantum of a spin wave, introduced more than nine decades ago, has always been manipulated through magnetic dipoles, (i.e., timereversal symmetry). Here, we report the experimental observation of chiral-spin transport in multiferroic BiFeO3, where the spin transport is controlled by reversing the ferroelectric polarization (i.e., spatial inversion symmetry). The ferroelectrically controlled magnons produce an unprecedented ratio of up to 18% rectification at room temperature. The spin torque that the magnons in BiFeO3 carry can be used to efficiently switch the magnetization of adja-cent magnets, with a spin-torque efficiency being comparable to the spin Hall effect in heavy metals. Utilizing such a controllable magnon generation and transmission in BiFeO3, an alloxide, energy-scalable logic is demonstrated composed of spin-orbit injection, detection, and magnetoelectric control. This observation opens a new chapter of multiferroic magnons and paves an alternative pathway towards low-dissipation nanoelectronics.
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Submitted 3 June, 2023;
originally announced June 2023.
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Coherent transfer of spin angular momentum by evanescent spin waves within antiferromagnetic NiO
Authors:
Maciej Dabrowski,
Takafumi Nakano,
David M. Burn,
Andreas Frisk,
David G. Newman,
Christoph Klewe,
Qian Li,
Mengmeng Yang,
Padraic Shafer,
Elke Arenholz,
Thorsten Hesjedal,
Gerrit van der Laan,
Zi Q. Qiu,
Robert J. Hicken
Abstract:
Insulating antiferromagnets are efficient and robust conductors of spin current. To realise the full potential of these materials within spintronics, the outstanding challenges are to demonstrate scalability down to nanometric lengthscales and the transmission of coherent spin currents. Here, we report the coherent transfer of spin angular momentum by excitation of evanescent spin waves of GHz fre…
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Insulating antiferromagnets are efficient and robust conductors of spin current. To realise the full potential of these materials within spintronics, the outstanding challenges are to demonstrate scalability down to nanometric lengthscales and the transmission of coherent spin currents. Here, we report the coherent transfer of spin angular momentum by excitation of evanescent spin waves of GHz frequency within antiferromagnetic NiO at room temperature. Using element-specific and phase-resolved x-ray ferromagnetic resonance, we probe the injection and transmission of ac spin current, and demonstrate that insertion of a few nanometre thick epitaxial NiO(001) layer between a ferromagnet and non-magnet can even enhance the flow of spin current. Our results pave the way towards coherent control of the phase and amplitude of spin currents at the nanoscale, and enable the realization of spin-logic devices and spin current amplifiers that operate at GHz and THz frequencies.
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Submitted 11 December, 2019;
originally announced December 2019.
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Coherent ac spin current transmission across an antiferromagnetic CoO insulator
Authors:
Q. Li,
M. Yang,
C. Klewe,
P. Shafer,
A. T. N'Diaye,
D. Hou,
T. Y. Wang,
N. Gao,
E. Saitoh,
C. Hwang,
R. J. Hicken,
J. Li,
E. Arenholz,
Z. Q. Qiu
Abstract:
The recent discovery of spin-current transmission through antiferromagnetic (AFM) insulating materials opens up unprecedented opportunities for fundamental physics and spintronics applications. The great mystery currently surrounding this topic is: how could THz AFM magnons mediate a GHz spin current? This mis-match of frequencies becomes particularly critical for the case of coherent ac spin-curr…
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The recent discovery of spin-current transmission through antiferromagnetic (AFM) insulating materials opens up unprecedented opportunities for fundamental physics and spintronics applications. The great mystery currently surrounding this topic is: how could THz AFM magnons mediate a GHz spin current? This mis-match of frequencies becomes particularly critical for the case of coherent ac spin-current, raising the fundamental question of whether a GHz ac spin-current can ever keep its coherence inside an AFM insulator and so drive the spin precession of another FM layer coherently? Utilizing element- and time-resolved x-ray pump-probe measurements on Py/Ag/CoO/Ag/Fe75Co25/MgO(001) heterostructures, we demonstrate that a coherent GHz ac spin current pumped by the permalloy (Py) ferromagnetic resonance (FMR) can transmit coherently across an antiferromagnetic CoO insulating layer to drive a coherent spin precession of the FM Fe75Co25 layer. Further measurement results favor thermal magnons rather than evanescent spin waves as the mediator of the coherent ac spin current in CoO.
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Submitted 1 June, 2019;
originally announced June 2019.
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Electrical transport and optical band gap of NiFe$_\textrm{2}$O$_\textrm{x}$ thin films
Authors:
Panagiota Bougiatioti,
Orestis Manos,
Christoph Klewe,
Daniel Meier,
Niclas Teichert,
Jan-Michael Schmalhorst,
Timo Kuschel,
Günter Reiss
Abstract:
We fabricated NiFe$_\textrm{2}$O$_\textrm{x}$ thin films on MgAl$_2$O$_4$(001) substrates by reactive dc magnetron co-sputtering varying the oxygen partial pressure during deposition. The fabrication of a variable material with oxygen deficiency leads to controllable electrical and optical properties which would be beneficial for the investigations of the transport phenomena and would, therefore,…
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We fabricated NiFe$_\textrm{2}$O$_\textrm{x}$ thin films on MgAl$_2$O$_4$(001) substrates by reactive dc magnetron co-sputtering varying the oxygen partial pressure during deposition. The fabrication of a variable material with oxygen deficiency leads to controllable electrical and optical properties which would be beneficial for the investigations of the transport phenomena and would, therefore, promote the use of such materials in spintronic and spin caloritronic applications. We used several characterization techniques in order to investigate the film properties, focusing on their structural, magnetic, electrical, and optical properties. From the electrical resistivity measurements we obtained the conduction mechanisms that govern the systems in high and low temperature regimes, extracting low thermal activation energies which unveil extrinsic transport mechanisms. The thermal activation energy decreases in the less oxidized samples revealing the pronounced contribution of a large amount of electronic states localized in the band gap to the electrical conductivity. Hall effect measurements showed the mixed-type semiconducting character of our films. The optical band gaps were determined via ultraviolet-visible spectroscopy. They follow a similar trend as the thermal activation energy, with lower band gap values in the less oxidized samples.
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Submitted 6 August, 2017;
originally announced August 2017.
