High Breakdown Electric Field (> 5 MV/cm) in UWBG AlGaN Transistors
Authors:
Seungheon Shin,
Hridibrata Pal,
Jon Pratt,
John Niroula,
Yinxuan Zhu,
Chandan Joishi,
Brianna A. Klein,
Andrew Armstrong,
Andrew A. Allerman,
Tomás Palacios,
Siddharth Rajan
Abstract:
We report on the design and demonstration of ultra-wide bandgap (UWBG) AlGaN-channel metal-insulator heterostructure field effect transistors (HEFTs) for high-power, high-frequency applications. We find that the integration of gate dielectrics and field plates greatly improves the breakdown field in these devices, with state-of-art average breakdown field of 5.3 MV/cm (breakdown voltage > 260 V) w…
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We report on the design and demonstration of ultra-wide bandgap (UWBG) AlGaN-channel metal-insulator heterostructure field effect transistors (HEFTs) for high-power, high-frequency applications. We find that the integration of gate dielectrics and field plates greatly improves the breakdown field in these devices, with state-of-art average breakdown field of 5.3 MV/cm (breakdown voltage > 260 V) with an associated maximum current density of 342 mA/mm, and cut-off frequency of 9.1 GHz. Furthermore, low trap-related impact was observed from minimal gate and drain lag estimated from pulsed I-V characteristics. The reported results provide the potential of UWBG AlGaN HEFTs for the next generation high-power radio frequency applications.
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Submitted 17 April, 2025; v1 submitted 17 April, 2025;
originally announced April 2025.
Energy Bands and Breakdown Characteristics in Al2O3/UWBG AlGaN Heterostructures
Authors:
Seungheon Shin,
Kyle Liddy,
Yinxuan Zhu,
Chandan Joishi,
Brianna A. Klein,
Andrew Armstrong,
Andrew A. Allerman,
Siddharth Rajan
Abstract:
We report on energy bands and breakdown characteristics of Al2O3 dielectrics on ultra-wide bandgap (UWBG) AlGaN heterostructures. Metal-dielectric-semiconductor structures are important to sustain high fields needed for future high-performance UWBG transistors. Using systematic experiments, we determined the fixed charge density (> 1013 cm-2), the dielectric/interface, and electric fields in the o…
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We report on energy bands and breakdown characteristics of Al2O3 dielectrics on ultra-wide bandgap (UWBG) AlGaN heterostructures. Metal-dielectric-semiconductor structures are important to sustain high fields needed for future high-performance UWBG transistors. Using systematic experiments, we determined the fixed charge density (> 1013 cm-2), the dielectric/interface, and electric fields in the oxide of under flat-band conditions in the semiconductor. Low gate-to-drain leakage current of up to 5 x 10-7 A/cm2 were obtained in the metal-oxide-semiconductor structures. In lateral metal-semiconductor-insulator test structures, breakdown voltage exceeding 1 kV was obtained with a channel sheet charge density of 1.27 x 1013 cm-2. The effective peak electric field and average breakdown field were estimated to be > 4.27 MV/cm and 1.99 MV/cm, respectively. These findings demonstrate the potential of Al2O2 integration for enhancing the breakdown performance of UWBG AlGaN HEMTs.
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Submitted 17 April, 2025; v1 submitted 1 April, 2025;
originally announced April 2025.
