Symmetry Enhanced Unconventional Spin Current Anisotropy in a Collinear Antiferromagnet
Authors:
Pankhuri Gupta,
Kacho Imtiyaz Ali Khan,
Akash Kumar,
Rekha Agarwal,
Nidhi Kandwal,
Ram Singh Yadav,
Johan Åkerman,
Pranaba Kishor Muduli
Abstract:
Spin-orbit torque (SOT) presents a promising avenue for energy-efficient spintronics devices, surpassing the limitations of spin transfer torque. While extensively studied in heavy metals, SOT in antiferromagnetic quantum materials remains largely unexplored. Here, we investigate SOT in epitaxial FeSn, a collinear antiferromagnet with a kagome lattice. FeSn exhibits intriguing topological quantum…
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Spin-orbit torque (SOT) presents a promising avenue for energy-efficient spintronics devices, surpassing the limitations of spin transfer torque. While extensively studied in heavy metals, SOT in antiferromagnetic quantum materials remains largely unexplored. Here, we investigate SOT in epitaxial FeSn, a collinear antiferromagnet with a kagome lattice. FeSn exhibits intriguing topological quantum features, including two-dimensional flat bands and Dirac-like surface states, making it an ideal platform for investigating emergent SOT properties. Using spin-torque ferromagnetic resonance, we uncover a six-fold symmetric damping-like SOT in epitaxial-FeSn/Py heterostructures, reflecting the six-fold symmetry of the epitaxial [0001]-oriented FeSn films. Additionally, we observe a substantial unconventional field-like torque, originating from spin currents with out-of-plane spin polarization. This torque exhibits a unique angular dependence-a superposition of six-fold crystalline symmetry and uniaxial symmetry associated with the antiferromagnetic spin Hall effect. Notably, the unconventional field-like torque is enhanced when the RF current flows along the Neel vector in FeSn. Our findings reveal an unconventional spin current anisotropy tunable by crystalline and magnetic symmetry, offering a novel approach for controlling SOT in antiferromagnetic spintronics.
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Submitted 31 March, 2025; v1 submitted 26 March, 2025;
originally announced March 2025.
Large spin Hall conductivity in epitaxial thin films of kagome antiferromagnet Mn$_3$Sn at room temperature
Authors:
Himanshu Bangar,
Kacho Imtiyaz Ali Khan,
Akash Kumar,
Niru Chowdhury,
Prasanta Kumar Muduli,
Pranaba Kishor Muduli
Abstract:
Mn$_3$Sn is a non-collinear antiferromagnetic quantum material that exhibits a magnetic Weyl semimetallic state and has great potential for efficient memory devices. High-quality epitaxial $c$-plane Mn$_3$Sn thin films have been grown on a sapphire substrate using a Ru seed layer. Using spin pumping induced inverse spin Hall effect measurements on $c$-plane epitaxial Mn$_3$Sn/Ni$_{80}$Fe$_{20}$, w…
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Mn$_3$Sn is a non-collinear antiferromagnetic quantum material that exhibits a magnetic Weyl semimetallic state and has great potential for efficient memory devices. High-quality epitaxial $c$-plane Mn$_3$Sn thin films have been grown on a sapphire substrate using a Ru seed layer. Using spin pumping induced inverse spin Hall effect measurements on $c$-plane epitaxial Mn$_3$Sn/Ni$_{80}$Fe$_{20}$, we measure spin-diffusion length ($λ_{\rm Mn_3Sn}$), and spin Hall conductivity ($σ_{\rm{SH}}$) of Mn$_3$Sn thin films: $λ_{\rm Mn_3Sn}=0.42\pm 0.04$ nm and $σ_{\rm{SH}}=-702~\hbar/ e~Ω^{-1}$cm$^{-1}$. While $λ_{\rm Mn_3Sn}$ is consistent with earlier studies, $σ_{\rm{SH}}$ is an order of magnitude higher and of the opposite sign. The behavior is explained on the basis of excess Mn, which shifts the Fermi level in our films, leading to the observed behavior. Our findings demonstrate a technique for engineering $σ_{\rm{SH}}$ of Mn$_3$Sn films by employing Mn composition for functional spintronic devices.
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Submitted 6 September, 2022;
originally announced September 2022.
