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Intrinsic Limits of Charge Carrier Mobilities in Layered Halide Perovskites
Authors:
Bruno Cucco,
Joshua Leveillee,
Viet-Anh Ha,
Jacky Even,
Mikaël Kepenekian,
Feliciano Giustino,
George Volonakis
Abstract:
Layered halide perovskites have emerged as potential alternatives to three-dimensional halide perovskites due to their improved stability and larger material phase space, allowing fine-tuning of structural, electronic, and optical properties. However, their charge carrier mobilities are significantly smaller than that of three-dimensional halide perovskites, which has a considerable impact on thei…
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Layered halide perovskites have emerged as potential alternatives to three-dimensional halide perovskites due to their improved stability and larger material phase space, allowing fine-tuning of structural, electronic, and optical properties. However, their charge carrier mobilities are significantly smaller than that of three-dimensional halide perovskites, which has a considerable impact on their application in optoelectronic devices. Here, we employ state-of-the-art ab initio approaches to unveil the electron-phonon mechanisms responsible for the diminished transport properties of layered halide perovskites. Starting from a prototypical ABX$_{3}$ halide perovskite, we model the case of $n=1$ and $n=2$ layered structures and compare their electronic and transport properties to the three-dimensional reference. The electronic and phononic properties are investigated within density functional theory (DFT) and density functional perturbation theory (DFPT), while transport properties are obtained via the ab initio Boltzmann transport equation. The vibrational modes contributing to charge carrier scattering are investigated and associated with polar-phonon scattering mechanisms arising from the long-range Fröhlich coupling and deformation potential scattering processes. Our investigation reveals that the lower mobilities in layered systems primarily originates from the increased electronic density of states at the vicinity of the band edges, while the electron-phonon coupling strength remains similar. Such increase is caused by the dimensionality reduction and the break in octahedra connectivity along the stacking direction. Our findings provide a fundamental understanding of the electron-phonon coupling mechanisms in layered perovskites and highlight the intrinsic limitations of the charge carrier transport in these materials.
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Submitted 28 June, 2024; v1 submitted 19 April, 2024;
originally announced April 2024.
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Unusual thickness dependence of exciton characteristics in 2D perovskite quantum wells
Authors:
J. -C. Blancon,
A. V. Stier,
H. Tsai,
W. Nie,
C. C. Stoumpos,
B. Traoré,
L. Pedesseau,
M. Kepenekian,
S. Tretiak,
S. A. Crooker,
C. Katan,
M. G. Kanatzidis,
J. J. Crochet,
J. Even,
A. D. Mohite
Abstract:
Understanding the nature and energy distribution of optical resonances is of central importance in low-dimensional materials$^{1-4}$ and its knowledge is critical for designing efficient optoelectronic devices. Ruddlesden-Popper halide perovskites are 2D solution-processed quantum wells with a general formula A$_2$A'$_{n-1}$M$_n$X$_{3n+1}$, where optoelectronic properties can be tuned by varying t…
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Understanding the nature and energy distribution of optical resonances is of central importance in low-dimensional materials$^{1-4}$ and its knowledge is critical for designing efficient optoelectronic devices. Ruddlesden-Popper halide perovskites are 2D solution-processed quantum wells with a general formula A$_2$A'$_{n-1}$M$_n$X$_{3n+1}$, where optoelectronic properties can be tuned by varying the perovskite layer thickness (n value), and have recently emerged as efficient semiconductors with technologically relevant stability. However, fundamental questions concerning the nature of optical resonances (excitons or free-carriers) and the exciton reduced mass, and their scaling with quantum well thickness remains unresolved. Here, using optical spectroscopy and 60-Tesla magneto-absorption supported by modelling, we unambiguously demonstrate that the optical resonances arise from tightly bound excitons with unexpectedly high exciton reduced mass (0.20 m0) and binding energies varying from 470 meV to 125 meV with increasing thickness from n=1 to 5. Our work demonstrates the dominant role of Coulomb interactions in 2D solution-processed quantum wells and presents unique opportunities for next-generation optoelectronic and photonic devices.
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Submitted 23 December, 2017; v1 submitted 20 October, 2017;
originally announced October 2017.
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Computational design of high performance hybrid perovskite on silicon tandem solar cells
Authors:
A. Rolland,
L. Pedesseau,
A. Beck,
M. Kepenekian,
C. Katan,
Y. Huang,
S. Wang,
C. Cornet,
O. Durand,
J. Even
Abstract:
In this study, the optoelectronic properties of a monolithically integrated series-connected tandem solar cell are simulated. Following the large success of hybrid organic-inorganic perovskites, which have recently demonstrated large efficiencies with low production costs, we examine the possibility of using the same perovskites as absorbers in a tandem solar cell. The cell consists in a methylamm…
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In this study, the optoelectronic properties of a monolithically integrated series-connected tandem solar cell are simulated. Following the large success of hybrid organic-inorganic perovskites, which have recently demonstrated large efficiencies with low production costs, we examine the possibility of using the same perovskites as absorbers in a tandem solar cell. The cell consists in a methylammonium mixed bromide-iodide lead perovskite, CH3NH3PbI3(1-x)Br3x (0 < x < 1), top sub-cell and a single-crystalline silicon bottom sub-cell. A Si-based tunnel junction connects the two sub-cells. Numerical simulations are based on a one-dimensional numerical drift-diffusion model. It is shown that a top cell absorbing material with 20% of bromide and a thickness in the 300-400 nm range affords current matching with the silicon bottom cell. Good interconnection between single cells is ensured by standard n and p doping of the silicon at 5.10^19cm-3 in the tunnel junction. A maximum efficiency of 27% is predicted for the tandem cell, exceeding the efficiencies of stand-alone silicon (17.3%) and perovskite cells (17.9%) taken for our simulations, and more importantly, that of the record crystalline Si cells.
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Submitted 4 September, 2015;
originally announced September 2015.
