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Mathematical model of COVID-19 intervention scenarios for Sao Paulo- Brazil
Authors:
Osmar Pinto Neto,
Jose Clark Reis,
Ana Carolina Brisola Brizzi,
Gustavo Jose Zambrano,
Joabe Marcos de Souza,
Wellington Amorim Pedroso,
Rodrigo Cunha de Mello Pedreiro,
Bruno de Matos Brizzi,
Ellysson Oliveira Abinader,
Deanna M. Kennedy,
Renato Amaro Zangaro
Abstract:
An epidemiological compartmental model was used to simulate social distancing strategies to contain the COVID-19 pandemic and prevent a second wave in Sao Paulo, Brazil. Optimization using genetic algorithm was used to determine the optimal solutions. Our results suggest the best-case strategy for Sao Paulo is to maintain or increase the current magnitude of social distancing for at least 60 more…
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An epidemiological compartmental model was used to simulate social distancing strategies to contain the COVID-19 pandemic and prevent a second wave in Sao Paulo, Brazil. Optimization using genetic algorithm was used to determine the optimal solutions. Our results suggest the best-case strategy for Sao Paulo is to maintain or increase the current magnitude of social distancing for at least 60 more days and increase the current levels of personal protection behaviors by a minimum of 10% (e.g., wearing facemasks, proper hand hygiene and avoid agglomeration). Followed by a long-term oscillatory level of social distancing with a stepping-down approach every 80 days over a period of two years with continued protective behavior.
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Submitted 18 May, 2020;
originally announced May 2020.
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Defect filtering for thermal expansion induced dislocations in III-V lasers on silicon
Authors:
Jennifer Selvidge,
Justin Norman,
Eamonn T. Hughes,
Chen Shang,
Daehwan Jung,
Aidan A. Taylor,
MJ Kennedy,
Robert Herrick,
John E. Bowers,
Kunal Mukherjee
Abstract:
Epitaxially integrated III-V semiconductor lasers for silicon photonics have the potential to dramatically transform information networks, but currently, dislocations limit performance and reliability even in defect tolerant InAs quantum dot (QD) based lasers. Despite being below critical thickness, QD layers in these devices contain previously unexplained misfit dislocations, which facilitate non…
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Epitaxially integrated III-V semiconductor lasers for silicon photonics have the potential to dramatically transform information networks, but currently, dislocations limit performance and reliability even in defect tolerant InAs quantum dot (QD) based lasers. Despite being below critical thickness, QD layers in these devices contain previously unexplained misfit dislocations, which facilitate non-radiative recombination. We demonstrate here that these misfit dislocations form during post-growth cooldown due to the combined effects of (1) thermal-expansion mismatch between the III-V layers and silicon and (2) precipitate and alloy hardening in the active region. By incorporating an additional sub-critical thickness, indium-alloyed misfit dislocation trapping layer, we leverage these mechanical hardening effects to our advantage, successfully displacing 95% of misfit dislocations from the QD layer in model structures. Unlike conventional dislocation mitigation strategies, the trapping layer reduces neither the number of threading dislocations nor the number of misfit dislocations. It simply shifts the position of misfit dislocations away from the QD layer, reducing the defects' impact on luminescence. In full lasers, adding a misfit dislocation trapping layer both above and below the QD active region displaces misfit dislocations and substantially improves performance: we measure a twofold reduction in lasing threshold currents and a greater than threefold increase in output power. Our results suggest that devices employing both traditional threading dislocation reduction techniques and optimized misfit dislocation trapping layers may finally lead to fully integrated, commercially viable silicon-based photonic integrated circuits.
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Submitted 4 August, 2020; v1 submitted 12 May, 2020;
originally announced May 2020.
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A narrow-linewidth III-V/Si/Si3N4 laser using multilayer heterogeneous integration
Authors:
Chao Xiang,
Warren Jin,
Joel Guo,
Jonathan D. Peters,
MJ Kennedy,
Jennifer Selvidge,
Paul A. Morton,
John E. Bowers
Abstract:
Silicon nitride (Si3N4), as a complementary metal-oxide-semiconductor (CMOS) material, finds wide use in modern integrated circuit (IC) technology. The past decade has witnessed tremendous development of Si3N4 in photonic areas, with innovations in nonlinear photonics, optical sensing, etc. However, the lack of an integrated laser with high performance prohibits the large-scale integration of Si3N…
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Silicon nitride (Si3N4), as a complementary metal-oxide-semiconductor (CMOS) material, finds wide use in modern integrated circuit (IC) technology. The past decade has witnessed tremendous development of Si3N4 in photonic areas, with innovations in nonlinear photonics, optical sensing, etc. However, the lack of an integrated laser with high performance prohibits the large-scale integration of Si3N4 waveguides into complex photonic integrated circuits (PICs). Here, we demonstrate a novel III-V/Si/Si3N4 structure to enable efficient electrically pumped lasing in a Si3N4 based laser external cavity. The laser shows superior temperature stability and low phase noise compared with lasers purely dependent on semiconductors. Beyond this, the demonstrated multilayer heterogeneous integration provides a practical path to incorporate efficient optical gain with various low-refractive-index materials. Multilayer heterogeneous integration could extend the capabilities of semiconductor lasers to improve performance and enable a new class of devices such as integrated optical clocks and optical gyroscopes.
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Submitted 1 November, 2019;
originally announced November 2019.
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Crack initiation of printed lines predicted with digital image correlation
Authors:
C. Katsarelis,
O. Glushko,
C. Tonkin,
M. S. Kennedy,
M. J. Cordill
Abstract:
Printing of metallic films has been preferred for roll-to-roll processes over vacuum technologies due to faster processing times and lower processing costs. Films can be produced by depositing inks containing suspended metallic particles within a solvent and then heating the films to both remove the solvent and sinter the particles. The resulting printed structure, electrical and mechanical behavi…
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Printing of metallic films has been preferred for roll-to-roll processes over vacuum technologies due to faster processing times and lower processing costs. Films can be produced by depositing inks containing suspended metallic particles within a solvent and then heating the films to both remove the solvent and sinter the particles. The resulting printed structure, electrical and mechanical behavior of the printed films has been studied to better understand their electro-mechanical response to loading and eventual brittle fracture. This study evaluated the electro-mechanical behavior of 1.25 μm printed Ag films using in-situ resistance and in-situ imaging methods. Digital image correlation was utilized with confocal laser scanning microscope images to better visualize crack initiation during tensile straining. This technique showed that cracks initiated earlier in the thicker areas of the film (crests) than in lower areas (troughs) because of a higher density of printing defects and the increased thickness.
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Submitted 9 April, 2019;
originally announced July 2019.
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High-channel-count 20 GHz passively mode locked quantum dot laser directly grown on Si with 4.1 Tbit/s transmission capacity
Authors:
Songtao Liu,
Xinru Wu,
Daehwan Jung,
Justin C. Norman,
Mj Kennedy,
Hon K. Tsang,
Arthur C. Gossard,
John E. Bowers
Abstract:
Low cost, small footprint, highly efficient and mass producible on-chip wavelength-division-multiplexing (WDM) light sources are key components in future silicon electronic and photonic integrated circuits (EPICs) which can fulfill the rapidly increasing bandwidth and lower energy per bit requirements. We present here, for the first time, a low noise high-channel-count 20 GHz passively mode-locked…
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Low cost, small footprint, highly efficient and mass producible on-chip wavelength-division-multiplexing (WDM) light sources are key components in future silicon electronic and photonic integrated circuits (EPICs) which can fulfill the rapidly increasing bandwidth and lower energy per bit requirements. We present here, for the first time, a low noise high-channel-count 20 GHz passively mode-locked quantum dot laser grown on complementary metal-oxide-semiconductor compatible on-axis (001) silicon substrate. The laser demonstrates a wide mode-locking regime in the O-band. A record low timing jitter value of 82.7 fs (4 - 80 MHz) and a narrow RF 3-dB linewidth of 1.8 kHz are measured. The 3 dB optical bandwidth of the comb is 6.1 nm (containing 58 lines, with 80 lines within the 10 dB bandwidth). The integrated average relative intensity noise values of the whole spectrum and a single wavelength channel are - 152 dB/Hz and - 133 dB/Hz in the frequency range from 10 MHz to 10 GHz, respectively. Utilizing 64 channels, an aggregate total transmission capacity of 4.1 terabits per second is realized by employing a 32 Gbaud Nyquist four-level pulse amplitude modulation format. The demonstrated performance makes the laser a compelling on-chip WDM source for multi-terabit/s optical interconnects in future large-scale silicon EPICs.
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Submitted 11 December, 2018;
originally announced December 2018.
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Heterogeneously integrated GaAs waveguides on insulator for efficient frequency conversion
Authors:
Lin Chang,
Andreas Boes,
Xiaowen Guo,
Daryl T. Spencer,
MJ. Kennedy,
Jon D. Peters,
Nicolas Volet,
Jeff Chiles,
Abijith Kowligy,
Nima Nader,
Daniel D. Hickstein,
Eric J. Stanton,
Scott A. Diddams,
Scott B. Papp,
John E. Bowers
Abstract:
Tremendous scientific progress has been achieved through the development of nonlinear integrated photonics. Prominent examples are Kerr-frequency-comb generation in micro-resonators, and supercontinuum generation and frequency conversion in nonlinear photonic waveguides. High conversion efficiency is enabling for applications of nonlinear optics, including such broad directions as high-speed optic…
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Tremendous scientific progress has been achieved through the development of nonlinear integrated photonics. Prominent examples are Kerr-frequency-comb generation in micro-resonators, and supercontinuum generation and frequency conversion in nonlinear photonic waveguides. High conversion efficiency is enabling for applications of nonlinear optics, including such broad directions as high-speed optical signal processing, metrology, and quantum communication and computation. In this work, we demonstrate a gallium-arsenide-on-insulator (GaAs) platform for nonlinear photonics. GaAs has among the highest second- and third-order nonlinear optical coefficients, and use of a silica cladding results in waveguides with a large refractive index contrast and low propagation loss for expanded design of nonlinear processes. By harnessing these properties and developing nanofabrication with GaAs, we report a record normalized second-harmonic efficiency of 13,000% W-1cm-2 at a fundamental wavelength of 2 um. This work paves the way for high performance nonlinear photonic integrated circuits (PICs), which not only can transition advanced functionalities outside the lab through fundamentally reduced power consumption and footprint, but also enables future optical sources and detectors.
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Submitted 29 May, 2018; v1 submitted 23 May, 2018;
originally announced May 2018.
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Design, Modeling and Testing of the Askaryan Radio Array South Pole Autonomous Renewable Power Stations
Authors:
D. Z. Besson,
D. M. Kennedy,
K. Ratzlaff,
R. Young
Abstract:
We describe the design, construction and operation of the Askaryan Radio Array (ARA) Autonomous Renewable Power Stations, initially installed at the South Pole in December, 2010 with the goal of providing an independently operating 100 W power source capable of year-round operation in extreme environments. In addition to particle astrophysics applications at the South Pole, such a station can easi…
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We describe the design, construction and operation of the Askaryan Radio Array (ARA) Autonomous Renewable Power Stations, initially installed at the South Pole in December, 2010 with the goal of providing an independently operating 100 W power source capable of year-round operation in extreme environments. In addition to particle astrophysics applications at the South Pole, such a station can easily be, and has since been, extended to operation elsewhere, as described herein.
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Submitted 6 March, 2014;
originally announced March 2014.
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Tracer Applications of Noble Gas Radionuclides in the Geosciences
Authors:
Z. -T. Lu,
P. Schlosser,
W. M. Smethie Jr.,
N. C. Sturchio,
T. P. Fischer,
B. M. Kennedy,
R. Purtschert,
J. P. Severinghaus,
D. K. Solomon,
T. Tanhua,
R. Yokochi
Abstract:
The noble gas radionuclides, including 81Kr (half-life = 229,000 yr), 85Kr (11 yr), and 39Ar (269 yr), possess nearly ideal chemical and physical properties for studies of earth and environmental processes. Recent advances in Atom Trap Trace Analysis (ATTA), a laser-based atom counting method, have enabled routine measurements of the radiokrypton isotopes, as well as the demonstration of the abili…
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The noble gas radionuclides, including 81Kr (half-life = 229,000 yr), 85Kr (11 yr), and 39Ar (269 yr), possess nearly ideal chemical and physical properties for studies of earth and environmental processes. Recent advances in Atom Trap Trace Analysis (ATTA), a laser-based atom counting method, have enabled routine measurements of the radiokrypton isotopes, as well as the demonstration of the ability to measure 39Ar in environmental samples. Here we provide an overview of the ATTA technique, and a survey of recent progress made in several laboratories worldwide. We review the application of noble gas radionuclides in the geosciences and discuss how ATTA can help advance these fields, specifically determination of groundwater residence times using 81Kr, 85Kr, and 39Ar; dating old glacial ice using 81Kr; and an 39Ar survey of the main water masses of the oceans, to study circulation pathways and estimate mean residence times. Other scientific questions involving deeper circulation of fluids in the Earth's crust and mantle also are within the scope of future applications. We conclude that the geoscience community would greatly benefit from an ATTA facility dedicated to this field, with instrumentation for routine measurements, as well as for research on further development of ATTA methods.
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Submitted 22 August, 2013; v1 submitted 20 May, 2013;
originally announced May 2013.
