-
Limited Diffusion of Silicon in GaN: A DFT Study Supported by Experimental Evidence
Authors:
Karol Kawka,
Pawel Kempisty,
Akira Kusaba,
Krzysztof Golyga,
Karol Pozyczka,
Michal Fijalkowski,
Michal Bockowski
Abstract:
Silicon (Si) is the primary donor dopant in gallium nitride (GaN), introduced through epitaxial growth or ion implantation. However, precise control over Si diffusion remains a critical challenge for high-performance device applications. This study investigates Si diffusion mechanisms in bulk GaN using first-principles density functional theory (DFT) calculations, supported by ultra-high-pressure…
▽ More
Silicon (Si) is the primary donor dopant in gallium nitride (GaN), introduced through epitaxial growth or ion implantation. However, precise control over Si diffusion remains a critical challenge for high-performance device applications. This study investigates Si diffusion mechanisms in bulk GaN using first-principles density functional theory (DFT) calculations, supported by ultra-high-pressure annealing (UHPA) experiments. Vacancy-mediated diffusion pathways were analyzed using the SIESTA code, with minimum energy paths (MEPs) and activation barriers determined via the nudged elastic band (NEB) method. The results indicate that Si diffusion barriers vary with crystallographic direction, with the lowest barrier of 3.2 eV along [11-20] and the highest barrier of ~9.9 eV along [1-100], rendering diffusion in this direction highly improbable. Alternative diffusion mechanisms, including direct exchange and ring-like migration, exhibit prohibitively high barriers ($>$12 eV). Phonon calculations confirm that temperature-induced reductions in effective diffusion barriers are minimal. Experimental validation using SIMS analysis on Si-implanted GaN samples subjected to UHPA (1450°C, 1 GPa) confirms negligible Si diffusion under these extreme conditions. These findings resolve inconsistencies in prior reports and establish that Si-doped GaN remains highly stable, ensuring reliable doping profiles for advanced electronic and optoelectronic applications.
△ Less
Submitted 27 March, 2025;
originally announced March 2025.
-
Polarization doping ab initio verification of the concept charge conservation and nonlocality
Authors:
Ashfaq Ahmad,
Pawel Strak,
Pawel Kempisty,
Konrad Sakowski,
Jacek Piechota,
Yoshihiro Kangawa,
Izabella Grzegory,
Michal Leszczynski,
Zbigniew R. Zytkiewicz,
Grzegorz Muziol,
Eva Monroy,
Stanislaw Krukowski,
Agata Kaminska
Abstract:
In this work, we study the emergence of polarization doping in AlxGa1-xN layers with graded composition from a theoretical viewpoint. We demonstrate that the charge conservation law applies for fixed and mobile charges separately, leading to nonlocal compensation phenomena involving bulk fixed and mobile charge and polarization sheet charge at the heterointerfaces. The magnitude of the effect allo…
▽ More
In this work, we study the emergence of polarization doping in AlxGa1-xN layers with graded composition from a theoretical viewpoint. We demonstrate that the charge conservation law applies for fixed and mobile charges separately, leading to nonlocal compensation phenomena involving bulk fixed and mobile charge and polarization sheet charge at the heterointerfaces. The magnitude of the effect allows obtaining technically viable mobile charge density for optoelectronic devices without impurity doping (donors or acceptors). Therefore, it provides an additional tool for the device designer, with the potential to attain high conductivities: high carrier concentrations can be obtained even in materials with high dopant ionization energies, and the mobility is not limited by scattering at ionized impurities.
△ Less
Submitted 22 March, 2022; v1 submitted 2 June, 2021;
originally announced June 2021.
-
Phase-amplitude functional theory -- new ab initio calculation method for large size systems
Authors:
Pawel Strak,
Konrad Sakowski,
Pawel Kempisty,
Stanislaw Krukowski
Abstract:
New method for ab initio calculations of the properties of large size system based on phase-amplitude functional is presented. It is shown that Schrodinger equation for many electrons complex system including large size molecules, or clusters and also periodic systems could be translated into functional of two variables, attributed to many electron wavefunctions: phase and the amplitude (i.e. squa…
▽ More
New method for ab initio calculations of the properties of large size system based on phase-amplitude functional is presented. It is shown that Schrodinger equation for many electrons complex system including large size molecules, or clusters and also periodic systems could be translated into functional of two variables, attributed to many electron wavefunctions: phase and the amplitude (i.e. square root of total electron density). The equations for the phase and the amplitude are derived. The kinetic and Coulomb interaction energy are expressed in function of these variables. The equations for one-electron wavefunctions, necessary for the energy spectrum are derived using these two variables.
△ Less
Submitted 9 October, 2019;
originally announced October 2019.
-
High efficiency UV emitters - theoretical investigation of GaN/AlN heterostructures
Authors:
Pawel Strak,
Pawel Kempisty,
Stanislaw Krukowski
Abstract:
Density functional theory simulations were used to obtain physical properties of GaN/AlN system. Combination of these two compounds into multiquantum well (MQW) structure will induce strong electrostatic effect leading to emergence of high magnitude dipole layers at the AlN/GaN interfaces, which were first postulated by {Tersoff Phys. Rev. B 30(8) pp.4874 (1984)} and already identified in GaN/InN…
▽ More
Density functional theory simulations were used to obtain physical properties of GaN/AlN system. Combination of these two compounds into multiquantum well (MQW) structure will induce strong electrostatic effect leading to emergence of high magnitude dipole layers at the AlN/GaN interfaces, which were first postulated by {Tersoff Phys. Rev. B 30(8) pp.4874 (1984)} and already identified in GaN/InN by {Romanowski et al. J. Phys. Chem C 114. 14410 (2010)}. When combining GaN and AlN in to a heterostructure a spatial projection of wavefunctions indicate that valence band offset between states becomes of order of 0.85 V. Systematic analysis of influence of number of Ga atomic layers on the properties of wells have shown that for thickness up to 4 Ga layers, GaN behave as carriers locating potential minimum rather, while for larger thickness it is a standard quantum well. In all cases wells has strongly localized quantum states close to valance band maxima (VBM) and conduction band minimum (CBM). The calculated oscillator strength values rapidly decreases for the well thickness in excess of 8 Ga layers (~21 Å) which indicates that wells for UV emitters should be much thinner than these based on InGaN/GaN systems. The Quantum Confined Stark Effect (QCSE) related changes of the transition energy in function of the geometric arrangement were also obtained.
△ Less
Submitted 7 November, 2012; v1 submitted 29 August, 2012;
originally announced August 2012.
-
Polarization and polarization induced electric field in nitrides - critical evaluation based on DFT studies
Authors:
Pawel Strak,
Pawel Kempisty,
Konrad Sakowski,
Stanislaw Krukowski
Abstract:
Density Functional Theory (DFT) calculations were used to evaluate polarity of group III nitrides, such as aluminum nitride (AlN), gallium nitride (GaN) and indium nitride (InN) providing physically sound quantitative measure of polarity of these materials. Two different approaches to polarization of nitride semiconductors were assessed and the conclusions have been used to develop models. It was…
▽ More
Density Functional Theory (DFT) calculations were used to evaluate polarity of group III nitrides, such as aluminum nitride (AlN), gallium nitride (GaN) and indium nitride (InN) providing physically sound quantitative measure of polarity of these materials. Two different approaches to polarization of nitride semiconductors were assessed and the conclusions have been used to develop models. It was shown that Berry phase formulation of the electron related polarization component provides a number of various solutions, different for various selection of the simulated volume. The electronic part gives saw-like pattern for polarization. A total number of these solutions, related to well known scaling of the geometric phase, is equal to the number of valence electrons in the system. Summation with similar pattern for ionic part provides several polarization values. Standard dipole density formulation depends on the selection of the simulation volume in periodic continuous way. Using a condition of continuous embedding into the infinite medium, and simultaneously, the zero surface charge representation at crystal boundary provides to physically sound solution. This solution is corresponding to maximal and minimal polarization values and also corresponds to different physical termination of the crystal surfaces, either bare or covered by complementary atoms. This change leads to polarization and electric field reversal. The polarization and related fields in finite size systems were obtained.
△ Less
Submitted 16 November, 2011; v1 submitted 20 October, 2011;
originally announced October 2011.
