Showing 1–3 of 3 results for author: Kelly, A E

Heterogeneous-free narrow linewidth semiconductor laser with optical injection locking

Authors: Xiao Sun, Zhibo Li, Yiming Sun, Yupei Wang, Jue Wang, John H. Marsh, Stephen. J. Sweeney, Anthony E. Kelly, Lianping Hou

Abstract: Narrow linewidth lasers are indispensable for coherent optical systems, including communications, metrology, and sensing. Although compact semiconductor lasers with narrow linewidths and low noise have been demonstrated, their spectral purity typically relies on hybrid or heterogeneous external cavity feedback. Here, we present a theoretical and experimental demonstration of a heterogeneous free o… ▽ More Narrow linewidth lasers are indispensable for coherent optical systems, including communications, metrology, and sensing. Although compact semiconductor lasers with narrow linewidths and low noise have been demonstrated, their spectral purity typically relies on hybrid or heterogeneous external cavity feedback. Here, we present a theoretical and experimental demonstration of a heterogeneous free optical injection locking (HF OIL) semiconductor laser. By integrating a topological interface state extended (TISE) laser with a micro ring resonator (MRR) on an AlGaInAs multiple quantum well platform,we achieve monolithic photon injection and phase locking, thereby reducing the optical linewidth. We fabricated and characterized a 1550 nm sidewall HF OIL laser, achieving stable single mode operation over a broad current range (65 to 300 mA) and a side mode suppression ratio (SMSR) over 50 dB. Under injection locking, the devices Voigt fitted linewidth narrowed from over 1.7 MHz (free running) to 4.2 kHz, representing a three order of magnitude improvement over conventional distributed feedback lasers. The intrinsic linewidth of 1.4 kHz is measured by correlated delayed self-heterodyne frequency noise power spectrum density (FN PSD) method. Moreover, the HF OIL laser demonstrated high phase stability and the ability to transition from a random phased to a phase locked state. These results underscore the potential of HF-OIL lasers in advancing coherent optical communications and phase encoders in quantum key distribution (QKD) systems. △ Less

Submitted 13 January, 2025; originally announced January 2025.

Multi-Wavelength DFB Laser Based on Sidewall Third Order Four Phase-Shifted Sampled Bragg Grating with Uniform Wavelength Spacing

Authors: Xiao Sun, Zhibo Li, Yizhe Fan, Mohanad Jamal Al-Rubaiee, John H. Marsh, Anthony E Kelly, Stephen. J. Sweeney, Lianping Hou

Abstract: We present the first demonstration of a 1550 nm multi-wavelength distributed feedback (MW-DFB) laser employing a third-order, four-phase-shifted sampled sidewall grating. By utilizing linearly chirped sampled gratings and incorporating multiple true π-phase shifts within the cavity, we achieved and experimentally validated a four-wavelength laser with a channel spacing of 0.4 nm. The device operat… ▽ More We present the first demonstration of a 1550 nm multi-wavelength distributed feedback (MW-DFB) laser employing a third-order, four-phase-shifted sampled sidewall grating. By utilizing linearly chirped sampled gratings and incorporating multiple true π-phase shifts within the cavity, we achieved and experimentally validated a four-wavelength laser with a channel spacing of 0.4 nm. The device operates stably and uniformly across a wide range of injection currents from 280 mA to 350 mA. The average wavelength spacing was measured at 0.401 nm with a standard deviation of 0.0081 nm. Additionally, we demonstrated a 0.3 nm MW-DFB laser with a seven-channel output, achieving a wavelength spacing of 0.274 nm and a standard deviation of 0.0055 nm. This MW-DFB laser features a ridge waveguide with sidewall gratings, requiring only one metalorganic vapor-phase epitaxy (MOVPE) step and a single III-V material etching process. This streamlined fabrication approach simplifies device manufacturing and is well-suited for dense wavelength division multiplexing (DWDM) systems. △ Less

Submitted 31 October, 2024; v1 submitted 26 September, 2024; originally announced September 2024.

Narrow Linewidth Laser Based on Extended Topological Interface States in One-Dimensional Photonic Crystals

Authors: Xiao Sun, Zhibo Li, Yiming Sun, Yupei Wang, Jue Wang, Huihua Cheng, Cong Fu, John H. Marsh, Anthony E. Kelly, Lianping Hou

Abstract: Recent advances in topological one-dimensional photonic crystal concepts have enabled the development of robust light-emitting devices by incorporating a topological interface state (TIS) at the cavity center. In this study, we theoretically and experimentally demonstrate a one-dimensional TIS-extended photonic crystal (1D-TISE-PC) structure. By integrating a linearly dispersive zero-index one-dim… ▽ More Recent advances in topological one-dimensional photonic crystal concepts have enabled the development of robust light-emitting devices by incorporating a topological interface state (TIS) at the cavity center. In this study, we theoretically and experimentally demonstrate a one-dimensional TIS-extended photonic crystal (1D-TISE-PC) structure. By integrating a linearly dispersive zero-index one-dimensional photonic crystal structure with a four-phase shift sampled grating, photons propagate along the cavity without phase differences, enhancing the robustness to material variations and extending the TIS. Our findings indicate that extending the TIS promotes a more uniform photon distribution along the laser cavity and mitigates the spatial hole burning (SHB) effect. We fabricated and characterized a 1550 nm sidewall 1D-TISE-PC semiconductor laser, achieving stable single-mode operation across a wide current range from 60 to 420 mA, with a side-mode suppression ratio of 50 dB. The 1D-TISE-PC structure exhibited a linewidth narrowing effect to approximately 150 kHz Lorentzian linewidth. Utilizing reconstruction equivalent-chirp technology for the 4PS sampled grating enabled precise wavelength control in 1D-TISE-PC laser arrays, achieving a wavelength spacing of 0.796 nm +- 0.003 nm. We show that the TIS still exists in the TISE cavity and topological protection is preserved. Its mode extension characteristics mitigate the SHB so narrows the linewidth. We argue that the design simplicity and improvement of the fabrication tolerance make this architecture suitable for high-power and narrow-linewidth semiconductor lasers development. △ Less

Submitted 10 July, 2024; originally announced July 2024.