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Highly tunable layered exciton in bilayer WS$_2$: linear quantum confined Stark effect versus electrostatic doping
Authors:
Sarthak Das,
Medha Dandu,
Garima Gupta,
Krishna Murali,
Nithin Abraham,
Sangeeth Kallatt,
Kenji Watanabe,
Takashi Taniguchi,
Kausik Majumdar
Abstract:
In 1H monolayer transition metal dichalcogenide, the inversion symmetry is broken, while the reflection symmetry is maintained. On the contrary, in the bilayer, the inversion symmetry is restored, but the reflection symmetry is broken. As a consequence of these contrasting symmetries, here we show that bilayer WS$_2$ exhibits a quantum confined Stark effect (QCSE) that is linear with the applied o…
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In 1H monolayer transition metal dichalcogenide, the inversion symmetry is broken, while the reflection symmetry is maintained. On the contrary, in the bilayer, the inversion symmetry is restored, but the reflection symmetry is broken. As a consequence of these contrasting symmetries, here we show that bilayer WS$_2$ exhibits a quantum confined Stark effect (QCSE) that is linear with the applied out-of-plane electric field, in contrary to a quadratic one for a monolayer. The interplay between the unique layer degree of freedom in the bilayer and the field driven partial inter-conversion between intra-layer and inter-layer excitons generates a giant tunability of the exciton oscillator strength. This makes bilayer WS$_2$ a promising candidate for an atomically thin, tunable electro-absorption modulator at the exciton resonance, particularly when stacked on top of a graphene layer that provides an ultra-fast non-radiative relaxation channel. By tweaking the biasing configuration, we further show that the excitonic response can be largely tuned through electrostatic doping, by efficiently transferring the oscillator strength from neutral to charged exciton. The findings are prospective towards highly tunable, atomically thin, compact and light, on chip, reconfigurable components for next generation optoelectronics.
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Submitted 13 November, 2020;
originally announced November 2020.
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Gate-tunable trion switch for excitonic device applications
Authors:
Sarthak Das,
Sangeeth Kallatt,
Nithin Abraham,
Kausik Majumdar
Abstract:
Trions are excitonic species with a positive or negative charge, and thus, unlike neutral excitons, the flow of trions can generate a net detectable charge current. Trions under favourable doping conditions can be created in a coherent manner using resonant excitation. In this work, we exploit these properties to demonstrate a gate controlled trion switch in a few-layer graphene/monolayer WS2/mono…
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Trions are excitonic species with a positive or negative charge, and thus, unlike neutral excitons, the flow of trions can generate a net detectable charge current. Trions under favourable doping conditions can be created in a coherent manner using resonant excitation. In this work, we exploit these properties to demonstrate a gate controlled trion switch in a few-layer graphene/monolayer WS2/monolayer graphene vertical heterojunction. By using a high resolution spectral scan through a temperature controlled variation of the bandgap of the WS2 sandwich layer, we obtain a gate voltage dependent vertical photocurrent strongly relying on the spectral position of the excitation, and the photocurrent maximizes when the excitation energy is resonant with the trion peak position. Further, the resonant photocurrent thus generated can be effectively controlled by a back gate voltage applied through the incomplete screening of the bottom monolayer graphene, and the photocurrent strongly correlates with the gate dependent trion intensity, while the non-resonant photocurrent exhibits only a weak gate dependence -unambiguously proving a trion driven photocurrent generation under resonance. We estimate a sub-100 fs switching time of the device. The findings are useful towards demonstration of ultra-fast excitonic devices in layered materials.
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Submitted 23 March, 2020;
originally announced March 2020.
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Highly Sensitive, Fast Graphene Photodetector with Responsivity $>10^6$ A/W Using Floating Quantum Well Gate
Authors:
Krishna Murali,
Nithin Abraham,
Sarthak Das,
Sangeeth Kallatt,
Kausik Majumdar
Abstract:
Graphene, owing to its zero bandgap electronic structure, is promising as an absorption material for ultra-wideband photodetection applications. However, graphene-absorption based detectors inherently suffer from poor responsivity due to weak absorption and fast photocarrier recombination, limiting their viability for low intensity light detection. Here we use a graphene/WS$_2$/MoS$_2$ vertical he…
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Graphene, owing to its zero bandgap electronic structure, is promising as an absorption material for ultra-wideband photodetection applications. However, graphene-absorption based detectors inherently suffer from poor responsivity due to weak absorption and fast photocarrier recombination, limiting their viability for low intensity light detection. Here we use a graphene/WS$_2$/MoS$_2$ vertical heterojunction to demonstrate a highly sensitive photodetector, where the graphene layer serves dual purpose, namely as the light absorption layer, and also as the carrier conduction channel, thus maintaining the broadband nature of the photodetector. A fraction of the photoelectrons in graphene encounter ultra-fast inter-layer transfer to a floating monolayer MoS$_2$ quantum well providing strong quantum confined photogating effect. The photodetector shows a responsivity of $4.4\times 10^6$ A/W at 30 fW incident power, outperforming photodetectors reported till date where graphene is used as light absorption material by several orders. In addition, the proposed photodetector exhibits an extremely low noise equivalent power ($N\!E\!P$) of $<4$ fW/$\sqrt{Hz}$ and a fast response ($\sim$ milliseconds) with zero reminiscent photocurrent. The findings are attractive towards the demonstration of graphene-based highly sensitive, fast, broadband photodetection technology.
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Submitted 19 August, 2019;
originally announced August 2019.
