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Atomistic-Level Analysis of Nanoindentation-Induced Plasticity in Arc--Melted NiFeCrCo Alloys: The role of stacking faults
Authors:
F. J. Dominguez-Gutierrez,
A. Olejarz,
M. Landeiro Dos Reis,
E. Wyszkowska,
D. Kalita,
W. Y. Huo,
I. Jozwik,
L. Kurpaska,
S. Papanikolaou,
M. J. Alava,
K. Muszka
Abstract:
Concentrated solid solution alloys (CSAs) have attracted attention for their promising properties; however, current manufacturing methods face challenges in complexity, high costs, and limited scalability, raising concerns about industrial viability. The prevalent technique, arc melting, yields high-purity samples with complex shapes. In this study, we explore nanoindentation tests at room tempera…
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Concentrated solid solution alloys (CSAs) have attracted attention for their promising properties; however, current manufacturing methods face challenges in complexity, high costs, and limited scalability, raising concerns about industrial viability. The prevalent technique, arc melting, yields high-purity samples with complex shapes. In this study, we explore nanoindentation tests at room temperature where arc-melted samples exhibit larger grain sizes, diminishing the effects of grain boundaries on the results. Motivated by these findings, our investigation focuses on the atomistic-level exploration of plasticity mechanisms, specifically dislocation nucleation and propagation during nanoindentation tests. The intricate chemistry of NiFeCrCo CSA influences pile-ups and slip traces, aiming to elucidate plastic deformation by considering both pristine and pre-existing stacking fault tetrahedra. Our analysis scrutinizes dynamic deformation processes, defect nucleation, and evolution, complemented by stress-strain and dislocation densities-strain curves illustrating the hardening mechanism of defective materials. Additionally, we examine surface morphology and plastic deformation through atomic shear strain and displacement mappings. This integrated approach provides insights into the complex interplay between material structure and mechanical behavior, paving the way for an enhanced understanding and potential advancements in CSA applications.
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Submitted 29 January, 2024;
originally announced January 2024.
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Effect of the nanowire diameter on the linearity of the response of GaN-based heterostructured nanowire photodetectors
Authors:
Maria Spies,
Jakub Polaczyński,
Akhil Ajay,
Dipankar Kalita,
Jonas Lähnemann,
Bruno Gayral,
Martien I. den Hertog,
Eva Monroy
Abstract:
Nanowire photodetectors are investigated because of their compatibility with flexible electronics, or for the implementation of on-chip optical interconnects. Such devices are characterized by ultrahigh photocurrent gain, but their photoresponse scales sublinearly with the optical power. Here, we present a study of single-nanowire photodetectors displaying a linear response to ultraviolet illumina…
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Nanowire photodetectors are investigated because of their compatibility with flexible electronics, or for the implementation of on-chip optical interconnects. Such devices are characterized by ultrahigh photocurrent gain, but their photoresponse scales sublinearly with the optical power. Here, we present a study of single-nanowire photodetectors displaying a linear response to ultraviolet illumination. Their structure consists of a GaN nanowire incorporating an AlN/GaN/AlN heterostructure, which generates an internal electric field. The activity of the heterostructure is confirmed by the rectifying behavior of the current-voltage characteristics in the dark, as well as by the asymmetry of the photoresponse in magnitude and linearity. Under reverse bias (negative bias on the GaN cap segment), the detectors behave linearly with the impinging optical power when the nanowire diameter is below a certain threshold ($\approx$ 80 nm), which corresponds to the total depletion of the nanowire stem due to the Fermi level pinning at the sidewalls. In the case of nanowires that are only partially depleted, their nonlinearity is explained by a nonlinear variation of the diameter of their central conducting channel under illumination.
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Submitted 29 April, 2019;
originally announced April 2019.
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On static equilibrium and balance puzzler
Authors:
Samrat Dey,
Ashish Paul,
Dipankar Saikia,
Deepjyoti Kalita,
Anamika Debbarma,
Shaheen Akhtar Wahab,
Saurabh Sarma
Abstract:
The principles of static equilibrium are of special interest to civil engineers. For a rigid body to be in static equilibrium the condition is that net force and net torque acting on the body should be zero. That clearly signifies that if equal weights are placed on either sides of a balance, the balance should be in equilibrium, even if its beam is not horizontal (we have considered the beam to b…
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The principles of static equilibrium are of special interest to civil engineers. For a rigid body to be in static equilibrium the condition is that net force and net torque acting on the body should be zero. That clearly signifies that if equal weights are placed on either sides of a balance, the balance should be in equilibrium, even if its beam is not horizontal (we have considered the beam to be straight and have no thickness, an ideal case). Thus, although the weights are equal, they will appear different which is puzzling. This also shows that the concept of equilibrium is confusing, especially neutral equilibrium is confused to be stable equilibrium. The study not only throws more light on the concept of static equilibrium, but also clarifies that a structure need not be firm and steady even if it is in static equilibrium.
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Submitted 11 December, 2012;
originally announced December 2012.
