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Size-dependent mass absorption cross-section of soot particles from various sources
Authors:
Joel C. Corbin,
Tyler J. Johnson,
Fengshan Liu,
Timothy A. Sipkens,
Mark P. Johnson,
Prem Lobo,
Greg J. Smallwood
Abstract:
The mass absorption cross-section (MAC) of combustion-generated soot is used in pollution and emissions measurements to quantify the mass concentration of soot and in atmospheric modelling to predict the radiative effects of soot on climate. Previous work has suggested that the MAC of soot particles may change with their size, due to (1) internal scattering among monomers in the soot aggregate, (2…
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The mass absorption cross-section (MAC) of combustion-generated soot is used in pollution and emissions measurements to quantify the mass concentration of soot and in atmospheric modelling to predict the radiative effects of soot on climate. Previous work has suggested that the MAC of soot particles may change with their size, due to (1) internal scattering among monomers in the soot aggregate, (2) the correlation of soot primary-particle diameter with aggregate size, (3) quantum confinement effects, or (4) a size-dependent degree of soot graphitization. Here, we report a size-dependent MAC for ex-situ soot sampled from two commercially available diffusion-flame soot generators, one aviation turbine engine, and one diesel generator. We also incorporate literature data. We show that the MAC increases with aggregate size until a plateau is reached at single particle masses between 4 and 30 fg (approximately 300-650 nm soot mobility diameter). The smallest particles may have MACs 50% to 80% smaller than the largest, depending on the source, while the largest particles have MACs within the range reported by previous measurements on polydisperse samples. Moreover, we show that models of hypotheses (1), (2), and (3) do not describe our measurement results, leaving hypothesis (4) as the only remaining candidate.
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Submitted 4 March, 2022;
originally announced March 2022.
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Accurate measurement of scattering and absorption loss in microphotonic devices
Authors:
Matthew Borselli,
Thomas J. Johnson,
Oskar Painter
Abstract:
We present a simple measurement and analysis technique to determine the fraction of optical loss due to both radiation (scattering) and linear absorption in microphotonic components. The method is generally applicable to optical materials in which both nonlinear and linear absorption are present, and requires only limited knowledge of absolute optical power levels, material parameters, and the s…
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We present a simple measurement and analysis technique to determine the fraction of optical loss due to both radiation (scattering) and linear absorption in microphotonic components. The method is generally applicable to optical materials in which both nonlinear and linear absorption are present, and requires only limited knowledge of absolute optical power levels, material parameters, and the structure geometry. The technique is applied to high quality factor (Q=1-5 X 10^6) silicon-on-insulator microdisk resonators. It is determined that linear absorption can account for more than half the total optical loss in the high-Q regime of these devices.
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Submitted 6 July, 2007;
originally announced July 2007.
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Surface Encapsulation for Low-Loss Silicon Photonics
Authors:
M. Borselli,
T. J. Johnson,
C. P. Michael,
M. D. Henry,
Oskar Painter
Abstract:
Encapsulation layers are explored for passivating the surfaces of silicon to reduce optical absorption in the 1500-nm wavelength band. Surface-sensitive test structures consisting of microdisk resonators are fabricated for this purpose. Based on previous work in silicon photovoltaics, coatings of SiNx and SiO2 are applied under varying deposition and annealing conditions. A short dry thermal oxi…
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Encapsulation layers are explored for passivating the surfaces of silicon to reduce optical absorption in the 1500-nm wavelength band. Surface-sensitive test structures consisting of microdisk resonators are fabricated for this purpose. Based on previous work in silicon photovoltaics, coatings of SiNx and SiO2 are applied under varying deposition and annealing conditions. A short dry thermal oxidation followed by a long high-temperature N2 anneal is found to be most effective at long-term encapsulation and reduction of interface absorption. Minimization of the optical loss is attributed to simultaneous reduction in sub-bandgap silicon surface states and hydrogen in the capping material.
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Submitted 3 July, 2007;
originally announced July 2007.
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An optical fiber-taper probe for wafer-scale microphotonic device characterization
Authors:
C. P. Michael,
M. Borselli,
T. J. Johnson,
C. Chrystal,
O. Painter
Abstract:
A small depression is created in a straight optical fiber taper to form a local probe suitable for studying closely spaced, planar microphotonic devices. The tension of the "dimpled" taper controls the probe-sample interaction length and the level of noise present during coupling measurements. Practical demonstrations with high-Q silicon microcavities include testing a dense array of undercut mi…
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A small depression is created in a straight optical fiber taper to form a local probe suitable for studying closely spaced, planar microphotonic devices. The tension of the "dimpled" taper controls the probe-sample interaction length and the level of noise present during coupling measurements. Practical demonstrations with high-Q silicon microcavities include testing a dense array of undercut microdisks (maximum Q = 3.3x10^6) and a planar microring (Q = 4.8x10^6).
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Submitted 9 February, 2007;
originally announced February 2007.
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Wavelength- and material-dependent absorption in GaAs and AlGaAs microcavities
Authors:
C. P. Michael,
K. Srinivasan,
T. J. Johnson,
O. Painter,
K. H. Lee,
K. Hennessy,
H. Kim,
E. Hu
Abstract:
The quality factors of modes in nearly identical GaAs and Al_{0.18}Ga_{0.82}As microdisks are tracked over three wavelength ranges centered at 980 nm, 1460 nm, and 1600 nm, with quality factors measured as high as 6.62x10^5 in the 1600-nm band. After accounting for surface scattering, the remaining loss is due to sub-bandgap absorption in the bulk and on the surfaces. We observe the absorption i…
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The quality factors of modes in nearly identical GaAs and Al_{0.18}Ga_{0.82}As microdisks are tracked over three wavelength ranges centered at 980 nm, 1460 nm, and 1600 nm, with quality factors measured as high as 6.62x10^5 in the 1600-nm band. After accounting for surface scattering, the remaining loss is due to sub-bandgap absorption in the bulk and on the surfaces. We observe the absorption is, on average, 80 percent greater in AlGaAs than in GaAs and in both materials is 540 percent higher at 980 nm than at 1600nm.
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Submitted 15 December, 2006; v1 submitted 23 October, 2006;
originally announced October 2006.
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Measuring the role of surface chemistry in silicon microphotonics
Authors:
Matthew Borselli,
Thomas J. Johnson,
Oskar Painter
Abstract:
The silicon/silicon dioxide (Si/SiO2) interface plays a crucial role in the performance, cost, and reliability of most modern microelectronic devices, from the basic transistor to flash memory, digital cameras, and solar cells. Today the gate oxide thickness of modern transistors is roughly 5 atomic layers, with 8 metal wire layers required to transport all the signals within a microprocessor. I…
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The silicon/silicon dioxide (Si/SiO2) interface plays a crucial role in the performance, cost, and reliability of most modern microelectronic devices, from the basic transistor to flash memory, digital cameras, and solar cells. Today the gate oxide thickness of modern transistors is roughly 5 atomic layers, with 8 metal wire layers required to transport all the signals within a microprocessor. In addition to the increasing latency of such reduced-dimension metal wires, further "Moore's Law" scaling of transistor cost and density is predicted to saturate in the next decade. As a result, silicon-based microphotonics is being explored for the routing and generation of high-bandwidth signals. In comparison to the extensive knowledge of the electronic properties of the Si/SiO2 interface, little is known about the optical properties of Si surfaces used in microphotonics. In this Letter, we explore the optical properties of the Si surface in the telecommunication-relevant wavelength band of 1400-1600 nm. Utilizing a high quality factor (Q ~ 1.5x10^6) optical microresonator to provide sensitivity down to a fractional surface optical loss of 10^-7, we show that optical loss within Si microphotonic components can be dramatically altered by Si surface preparation, with fraction loss of 2 x 10^-5 measured for chemical oxide surfaces as compared to <2 x 10^-6 for hydrogen-terminated Si surfaces. These results indicate that the optical properties of Si surfaces can be significantly and reversibly altered by standard microelectronics treatments, and that stable, high optical quality surface passivation layers will be critical in future Si micro- and nano-photonic systems.
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Submitted 5 December, 2005;
originally announced December 2005.
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Optical loss and lasing characteristics of high-quality-factor AlGaAs microdisk resonators with embedded quantum dots
Authors:
Kartik Srinivasan,
Matthew Borselli,
Thomas J. Johnson,
Paul E. Barclay,
Oskar Painter,
Andreas Stintz,
Sanjay Krishna
Abstract:
Optical characterization of AlGaAs microdisk resonant cavities with a quantum dot active region is presented. Direct passive measurement of the optical loss within AlGaAs microdisk resonant structures embedded with InAs/InGaAs dots-in-a-well (DWELL) is performed using an optical-fiber-based probing technique at a wavelength (lambda~1400 nm) that is red-detuned from the dot emission wavelength (l…
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Optical characterization of AlGaAs microdisk resonant cavities with a quantum dot active region is presented. Direct passive measurement of the optical loss within AlGaAs microdisk resonant structures embedded with InAs/InGaAs dots-in-a-well (DWELL) is performed using an optical-fiber-based probing technique at a wavelength (lambda~1400 nm) that is red-detuned from the dot emission wavelength (lambda~1200 nm). Measurements in the 1400 nm wavelength band on microdisks of diameter D = 4.5 microns show that these structures support modes with cold-cavity quality factors as high as 360,000. DWELL-containing microdisks are then studied through optical pumping at room temperature. Pulsed lasing at lambda ~ 1200 nm is seen for cavities containing a single layer of InAs dots, with threshold values of ~ 17 microWatts, approaching the estimated material transparency level. Room-temperature continuous wave operation is also observed.
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Submitted 10 December, 2004;
originally announced December 2004.
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A low-loss fiber accessible plasmon photonic crystal waveguide for planar energy guiding and sensing
Authors:
Stefan A. Maier,
Paul E. Barclay,
Thomas J. Johnson,
Michelle D. Friedman,
Oskar J. Painter
Abstract:
A metal nanoparticle plasmon waveguide for electromagnetic energy transport utilizing dispersion engineering to dramatically increase lateral energy confinement via a two-dimensional pattern of Au dots on an optically thin Si membrane is described. Using finite-difference time-domain simulations and coupled-mode theory, we show that phase-matched evanescent excitation from conventional fiber tap…
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A metal nanoparticle plasmon waveguide for electromagnetic energy transport utilizing dispersion engineering to dramatically increase lateral energy confinement via a two-dimensional pattern of Au dots on an optically thin Si membrane is described. Using finite-difference time-domain simulations and coupled-mode theory, we show that phase-matched evanescent excitation from conventional fiber tapers is possible with efficiencies > 90 % for realistic geometries. Energy loss in this waveguide is mainly due to material absorption, allowing for 1/e energy decay distances of about 2 mm for excitation at telecommunication frequencies. This concept can be extended to the visible regime and promises applications in optical energy guiding, optical sensing, and switching.
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Submitted 9 December, 2003;
originally announced December 2003.
