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Harvesting the triplet excitons of quasi-two-dimensional perovskite toward highly efficient white light-emitting diodes
Authors:
Yue Yu,
Chenjing Zhao,
Lin Ma,
Lihe Yan,
Bo Jiao,
Jingrui Li,
Jun Xi,
Jinhai Si,
Yuren Li,
Yanmin Xu,
Hua Dong,
Jingfei Dai,
Fang Yuan,
Peichao Zhu,
Alex K. -Y. Jen,
Zhaoxin Wu
Abstract:
Utilization of triplet excitons, which generally emit poorly, is always fundamental to realize highly efficient organic light-emitting diodes (LEDs). While triplet harvest and energy transfer via electron exchange between triplet donor and acceptor are fully understood in doped organic phosphorescence and delayed fluorescence systems, the utilization and energy transfer of triplet excitons in quas…
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Utilization of triplet excitons, which generally emit poorly, is always fundamental to realize highly efficient organic light-emitting diodes (LEDs). While triplet harvest and energy transfer via electron exchange between triplet donor and acceptor are fully understood in doped organic phosphorescence and delayed fluorescence systems, the utilization and energy transfer of triplet excitons in quasi-two-dimensional (quasi-2D) perovskite are still ambiguous. Here, we use an orange-phosphorescence-emitting ultrathin organic layer to probe triplet behavior in the sky-blue-emitting quasi-2D perovskite. The delicate white LEDs architecture enables a carefully tailored Dexter-like energy-transfer mode that largely rescues the triplet excitons in quasi-2D perovskite. Our white organic-inorganic LEDs achieve maximum forward-viewing external quantum efficiency of 8.6% and luminance over 15000 cd m-2, exhibiting a significant efficiency enhancement versus the corresponding sky-blue perovskite LED (4.6%). The efficient management of energy transfer between excitons in quasi-2D perovskite and Frenkel excitons in organic layer opens the door to fully utilizing excitons for white organic-inorganic LEDs.
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Submitted 1 December, 2021;
originally announced December 2021.
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A silicon-organic hybrid platform for quantum microwave-to-optical transduction
Authors:
Jeremy D. Witmer,
Timothy P. McKenna,
Patricio Arrangoiz-Arriola,
Raphaël Van Laer,
E. Alex Wollack,
Francis Lin,
Alex K. -Y. Jen,
Jingdong Luo,
Amir H. Safavi-Naeini
Abstract:
Low-loss fiber optic links have the potential to connect superconducting quantum processors together over long distances to form large scale quantum networks. A key component of these future networks is a quantum transducer that coherently and bidirectionally converts photons from microwave frequencies to optical frequencies. We present a platform for electro-optic photon conversion based on silic…
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Low-loss fiber optic links have the potential to connect superconducting quantum processors together over long distances to form large scale quantum networks. A key component of these future networks is a quantum transducer that coherently and bidirectionally converts photons from microwave frequencies to optical frequencies. We present a platform for electro-optic photon conversion based on silicon-organic hybrid photonics. Our device combines high quality factor microwave and optical resonators with an electro-optic polymer cladding to perform microwave-to-optical photon conversion from 6.7 GHz to 193 THz (1558 nm). The device achieves an electro-optic coupling rate of 330 Hz in a millikelvin dilution refrigerator environment. We use an optical heterodyne measurement technique to demonstrate the single-sideband nature of the conversion with a selectivity of approximately 10 dB. We analyze the effects of stray light in our device and suggest ways in which this can be mitigated. Finally, we present initial results on high-impedance spiral resonators designed to increase the electro-optic coupling.
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Submitted 21 December, 2019;
originally announced December 2019.
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Quantifying Efficiency Loss of Perovskite Solar Cells by a Modified Detailed Balance Model
Authors:
Wei E. I. Sha,
Hong Zhang,
Zi Shuai Wang,
Hugh L. Zhu,
Xingang Ren,
Francis Lin,
Alex K. -Y. Jen,
Wallace C. H. Choy
Abstract:
A modified detailed balance model is built to understand and quantify efficiency loss of perovskite solar cells. The modified model captures the light-absorption dependent short-circuit current, contact and transport-layer modified carrier transport, as well as recombination and photon-recycling influenced open-circuit voltage. Our theoretical and experimental results show that for experimentally…
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A modified detailed balance model is built to understand and quantify efficiency loss of perovskite solar cells. The modified model captures the light-absorption dependent short-circuit current, contact and transport-layer modified carrier transport, as well as recombination and photon-recycling influenced open-circuit voltage. Our theoretical and experimental results show that for experimentally optimized perovskite solar cells with the power conversion efficiency of 19%, optical loss of 25%, non-radiative recombination loss of 35%, and ohmic loss of 35% are the three dominant loss factors for approaching the 31% efficiency limit of perovskite solar cells. We also find that the optical loss will climb up to 40% for a thin-active-layer design. Moreover, a misconfigured transport layer will introduce above 15% of energy loss. Finally, the perovskite-interface induced surface recombination, ohmic loss, and current leakage should be further reduced to upgrade device efficiency and eliminate hysteresis effect. The work contributes to fundamental understanding of device physics of perovskite solar cells. The developed model offers a systematic design and analysis tool to photovoltaic science and technology.
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Submitted 9 January, 2018;
originally announced January 2018.
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Silicon-Organic Hybrid (SOH) Mach-Zehnder Modulators for 100 Gbit/s On-Off Keying
Authors:
Stefan Wolf,
Heiner Zwickel,
Wladislaw Hartmann,
Matthias Lauermann,
Yasar Kutuvantavida,
Clemens Kieninger,
Lars Altenhain,
Rolf Schmid,
Jingdong Luo,
Alex K. -Y. Jen,
Sebastian Randel,
Wolfgang Freude,
Christian Koos
Abstract:
Electro-optic modulators for high-speed on-off keying (OOK) are key components of short- and mediumreach interconnects in data-center networks. Besides small footprint and cost-efficient large-scale production, small drive voltages and ultra-low power consumption are of paramount importance for such devices. Here we demonstrate that the concept of silicon-organic hybrid (SOH) integration is perfec…
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Electro-optic modulators for high-speed on-off keying (OOK) are key components of short- and mediumreach interconnects in data-center networks. Besides small footprint and cost-efficient large-scale production, small drive voltages and ultra-low power consumption are of paramount importance for such devices. Here we demonstrate that the concept of silicon-organic hybrid (SOH) integration is perfectly suited for meeting these challenges. The approach combines the unique processing advantages of large-scale silicon photonics with unrivalled electro-optic (EO) coefficients obtained by molecular engineering of organic materials. In our proof-of-concept experiments, we demonstrate generation and transmission of OOK signals with line rates of up to 100 Gbit/s using a 1.1 mm-long SOH Mach-Zehnder modulator (MZM) which features a π-voltage of only 0.9 V. This experiment represents not only the first demonstration of 100 Gbit/s OOK on the silicon photonic platform, but also leads to the lowest drive voltage and energy consumption ever demonstrated at this data rate for a semiconductor-based device. We support our experimental results by a theoretical analysis and show that the nonlinear transfer characteristic of the MZM can be exploited to overcome bandwidth limitations of the modulator and of the electric driver circuitry. The devices are fabricated in a commercial silicon photonics line and can hence be combined with the full portfolio of standard silicon photonic devices. We expect that high-speed power-efficient SOH modulators may have transformative impact on short-reach optical networks, enabling compact transceivers with unprecedented energy efficiency that will be at the heart of future Ethernet interfaces at Tbit/s data rates.
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Submitted 12 September, 2017; v1 submitted 1 September, 2017;
originally announced September 2017.
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Broadband energy-efficient optical modulation by hybrid integration of silicon nanophotonics and organic electro-optic polymer
Authors:
Xingyu Zhang,
Amir Hosseini,
Harish Subbaraman,
Jingdong Luo,
Alex K. -Y Jen,
Chi-jui Chung,
Hai Yan,
Zeyu Pan,
Robert L. Nelson,
Ray T. Chen
Abstract:
Silicon-organic hybrid integrated devices have emerging applications ranging from high-speed optical interconnects to photonic electromagnetic-field sensors. Silicon slot photonic crystal waveguides (PCWs) filled with electro-optic (EO) polymers combine the slow-light effect in PCWs with the high polarizability of EO polymers, which promises the realization of high-performance optical modulators.…
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Silicon-organic hybrid integrated devices have emerging applications ranging from high-speed optical interconnects to photonic electromagnetic-field sensors. Silicon slot photonic crystal waveguides (PCWs) filled with electro-optic (EO) polymers combine the slow-light effect in PCWs with the high polarizability of EO polymers, which promises the realization of high-performance optical modulators. In this paper, a broadband, power-efficient, low-dispersion, and compact optical modulator based on an EO polymer filled silicon slot PCW is presented. A small voltage-length product of Vπ*L=0.282Vmm is achieved, corresponding to an unprecedented record-high effective in-device EO coefficient (r33) of 1230pm/V. Assisted by a backside gate voltage, the modulation response up to 50GHz is observed, with a 3-dB bandwidth of 15GHz, and the estimated energy consumption is 94.4fJ/bit at 10Gbit/s. Furthermore, lattice-shifted PCWs are utilized to enhance the optical bandwidth by a factor of ~10X over other modulators based on non-band-engineered PCWs and ring-resonators.
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Submitted 6 March, 2015;
originally announced March 2015.
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Antenna-coupled silicon-organic hybrid integrated photonic crystal modulator for broadband electromagnetic wave detection
Authors:
Xingyu Zhang,
Amir Hosseini,
Harish Subbaraman,
Shiyi Wang,
Qiwen Zhan,
Jingdong Luo,
Alex K. -Y. Jen,
Chi-jui Chung,
Hai Yan,
Zeyu Pan,
Robert L. Nelson,
Charles Y. -C. Lee,
Ray T. Chen
Abstract:
In this work, we design, fabricate and characterize a compact, broadband and highly sensitive integrated photonic electromagnetic field sensor based on a silicon-organic hybrid modulator driven by a bowtie antenna. The large electro-optic (EO) coefficient of organic polymer, the slow-light effects in the silicon slot photonic crystal waveguide (PCW), and the broadband field enhancement provided by…
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In this work, we design, fabricate and characterize a compact, broadband and highly sensitive integrated photonic electromagnetic field sensor based on a silicon-organic hybrid modulator driven by a bowtie antenna. The large electro-optic (EO) coefficient of organic polymer, the slow-light effects in the silicon slot photonic crystal waveguide (PCW), and the broadband field enhancement provided by the bowtie antenna, are all combined to enhance the interaction of microwaves and optical waves, enabling a high EO modulation efficiency and thus a high sensitivity. The modulator is experimentally demonstrated with a record-high effective in-device EO modulation efficiency of r33=1230pm/V. Modulation response up to 40GHz is measured, with a 3-dB bandwidth of 11GHz. The slot PCW has an interaction length of 300um, and the bowtie antenna has an area smaller than 1cm2. The bowtie antenna in the device is experimentally demonstrated to have a broadband characteristics with a central resonance frequency of 10GHz, as well as a large beam width which enables the detection of electromagnetic waves from a large range of incident angles. The sensor is experimentally demonstrated with a minimum detectable electromagnetic power density of 8.4mW/m2 at 8.4GHz, corresponding to a minimum detectable electric field of 2.5V/m and an ultra-high sensitivity of 0.000027V/m Hz^-1/2 ever demonstrated. To the best of our knowledge, this is the first silicon-organic hybrid device and also the first PCW device used for the photonic detection of electromagnetic waves. Finally, we propose some future work, including a Teraherz wave sensor based on antenna-coupled electro-optic polymer filled plasmonic slot waveguide, as well as a fully packaged and tailgated device.
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Submitted 6 March, 2015;
originally announced March 2015.
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Miniaturized Low-power Electro-optic Modulator Based on Silicon Integrated Nanophotonics and Organic Polymers
Authors:
Xingyu Zhang,
Amir Hosseini,
Jingdong Luo,
Alex K. -Y. Jen,
Ray T. Chen
Abstract:
We design and demonstrate a compact, low-power, low-dispersion and broadband optical modulator based on electro-optic (EO) polymer refilled silicon slot photonic crystal waveguide (PCW). The EO polymer is engineered for large EO activity and near-infrared transparency. The half-wave switching-voltage is measured to be Vπ=0.97V over optical spectrum range of 8nm, corresponding to a record-high effe…
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We design and demonstrate a compact, low-power, low-dispersion and broadband optical modulator based on electro-optic (EO) polymer refilled silicon slot photonic crystal waveguide (PCW). The EO polymer is engineered for large EO activity and near-infrared transparency. The half-wave switching-voltage is measured to be Vπ=0.97V over optical spectrum range of 8nm, corresponding to a record-high effective in-device r33 of 1190pm/V and Vπ L of 0.291Vmm in a push-pull configuration. Excluding the slow-light effect, we estimate the EO polymer is poled with an ultra-high efficiency of 89pm/V in the slot. In addition, to achieve high-speed modulation, silicon PCW is selectively doped to reduce RC time delay. The 3-dB RF bandwidth of the modulator is measured to be 11GHz, and a modulation response up to 40GHz is observed.
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Submitted 7 December, 2014;
originally announced December 2014.
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Wide optical spectrum range, sub-volt, compact modulator based on electro-optic polymer refilled silicon slot photonic crystal waveguide
Authors:
Xingyu Zhang,
Amir Hosseini,
Jingdong Luo,
Alex K. -Y. Jen,
Ray T. Chen
Abstract:
We design and demonstrate a compact and low-power band-engineered electro-optic (EO) polymer refilled silicon slot photonic crystal waveguide (PCW) modulator. The EO polymer is engineered for large EO activity and near-infrared transparency. A PCW step coupler is used for optimum coupling to the slow-light mode of the band-engineered PCW. The half-wave switching-voltage is measured to be Vπ=0.97+-…
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We design and demonstrate a compact and low-power band-engineered electro-optic (EO) polymer refilled silicon slot photonic crystal waveguide (PCW) modulator. The EO polymer is engineered for large EO activity and near-infrared transparency. A PCW step coupler is used for optimum coupling to the slow-light mode of the band-engineered PCW. The half-wave switching-voltage is measured to be Vπ=0.97+-0.02V over optical spectrum range of 8nm, corresponding to the effective in-device r33 of 1190pm/V and Vπ L of 0.291+-0.006V mm in a push-pull configuration. Excluding the slow-light effect, we estimate the EO polymer is poled with an efficiency of 89pm/V in the slot.
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Submitted 1 March, 2014;
originally announced March 2014.
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Sub-Volt Silicon-Organic Electrooptic Modulator
Authors:
Ran Ding,
Tom Baehr-Jones,
Woo-Joong Kim,
Alexander Spott,
Jean-Marc Fedeli,
Su Huang,
Jingdong Luo,
Alex K. -Y. Jen,
Larry Dalton,
Michael Hochberg
Abstract:
Lowering the operating voltage of electrooptic modulators is desirable for a variety of applications, most notably in analog photonics , and digital data communications . In particular for digital systems such as CPUs, it is desirable to develop modulators that are both temperature-insensitive and compatible with typically sub-2V CMOS electronics ; however, drive voltages in silicon-based MZIs cur…
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Lowering the operating voltage of electrooptic modulators is desirable for a variety of applications, most notably in analog photonics , and digital data communications . In particular for digital systems such as CPUs, it is desirable to develop modulators that are both temperature-insensitive and compatible with typically sub-2V CMOS electronics ; however, drive voltages in silicon-based MZIs currently exceed 6.5V . Here we show an MZI modulator based on an electrooptic polymer-clad silicon slot waveguide, with a halfwave voltage of only 0.69V, and a bandwidth of 500 MHz. We also show that there are also paths to significantly improve both the bandwidth and drive voltage . Our silicon-organic modulator has an intrinsic power consumption less than 0.66 pJ/bit, nearly an order of magnitude improvement over the previous lowest energy silicon MZI .
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Submitted 13 September, 2010;
originally announced September 2010.
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Terahertz All-Optical Modulation in a Silicon-Polymer Hybrid System
Authors:
Michael Hochberg,
Tom Baehr-Jones,
Guangxi Wang,
Michael Shearn,
Katherine Harvard,
Jingdong Liu,
Baoquan Chen,
Zhengwei Shi,
Rhys Lawson,
Phil Sullivan,
Alex K. Y. Jen,
Larry Dalton,
Axel Scherer
Abstract:
Although Gigahertz-scale free-carrier modulators have been previously demonstrated in silicon, intensity modulators operating at Terahertz speeds have not been reported because of silicon's weak ultrafast optical nonlinearity. We have demonstrated intensity modulation of light with light in a silicon-polymer integrated waveguide device, based on the all-optical Kerr effect - the same ultrafast e…
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Although Gigahertz-scale free-carrier modulators have been previously demonstrated in silicon, intensity modulators operating at Terahertz speeds have not been reported because of silicon's weak ultrafast optical nonlinearity. We have demonstrated intensity modulation of light with light in a silicon-polymer integrated waveguide device, based on the all-optical Kerr effect - the same ultrafast effect used in four-wave mixing. Direct measurements of time-domain intensity modulation are made at speeds of 10 GHz. We showed experimentally that the ultrafast mechanism of this modulation functions at the optical frequency through spectral measurements, and that intensity modulation at frequencies in excess of 1 THz can be obtained in this device. By integrating optical polymers through evanescent coupling to high-mode-confinement silicon waveguides, we greatly increase the effective nonlinearity of the waveguide for cross-phase modulation. The combination of high mode confinement, multiple integrated optical components, and high nonlinearities produces all-optical ultrafast devices operating at continuous-wave power levels compatible with telecommunication systems. Although far from commercial radio frequency optical modulator standards in terms of extinction, these devices are a first step in development of large-scale integrated ultrafast optical logic in silicon, and are two orders of magnitude faster than previously reported silicon devices.
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Submitted 28 June, 2006;
originally announced June 2006.
