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High-Performance Ultra-Wide-Bandgap CaSnO3 Metal-Oxide-Semiconductor Field-Effect Transistors
Authors:
Weideng Sun,
Junghyun Koo,
Donghwan Kim,
Hongseung Lee,
Rishi Raj,
Chengyu Zhu,
Kiyoung Lee,
Andre Mkhoyan,
Hagyoul Bae,
Bharat Jalan,
Gang Qiu
Abstract:
The increasing demand for high-voltage and high-power electronic applications has intensified the search for novel ultrawide bandgap (UWB) semiconductors. Alkaline earth stannates possess wide band gaps and exhibit the highest room-temperature electron mobilities among all perovskite oxides. Among this family, Calcium stannate (CaSnO3) has the largest band gap of ~4.7 eV, holding great promise for…
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The increasing demand for high-voltage and high-power electronic applications has intensified the search for novel ultrawide bandgap (UWB) semiconductors. Alkaline earth stannates possess wide band gaps and exhibit the highest room-temperature electron mobilities among all perovskite oxides. Among this family, Calcium stannate (CaSnO3) has the largest band gap of ~4.7 eV, holding great promise for high-power applications. However, the demonstration of CaSnO3 power electronic devices is so far limited. In this work, high-performance metal-oxide-semiconductor field-effect transistor (MOSFET) devices based on La-doped CaSnO3 are demonstrated for the first time. The MOSFETs exhibit an on/off ratio exceeding 10^8, along with field-effect mobility of 8.4 cm2 V-1 s-1 and on-state current of 30 mA mm-1. The high performance of the CaSnO3 MOSFET devices can be ascribed to the excellent metal-to-semiconductor contact resistance of 0.73 kΩμm. The devices also show great potential for harsh environment operations, as high-temperature operations up to 400 K have been demonstrated. An off-state breakdown voltage of 1660 V is achieved, with a breakdown field of ~8.3 MV cm-1 among the highest reported for all UWB semiconductors. This work represents significant progress toward realizing the practical application of CaSnO3 in future high-voltage power electronic technologies.
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Submitted 30 June, 2025;
originally announced June 2025.
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Interfacial strong coupling and negative dispersion of propagating polaritons in freestanding oxide membranes
Authors:
Brayden Lukaskawcez,
Shivasheesh Varshney,
Sooho Choo,
Sang Hyun Park,
Dongjea Seo,
Liam Thompson,
Nitzan Hirshberg,
Madison Garber,
Devon Uram,
Hayden Binger,
Steven Koester,
Sang-Hyun Oh,
Tony Low,
Bharat Jalan,
Alexander McLeod
Abstract:
Membranes of complex oxides like perovskite SrTiO3 extend the multi-functional promise of oxide electronics into the nanoscale regime of two-dimensional materials. Here we demonstrate that free-standing oxide membranes supply a reconfigurable platform for nano-photonics based on propagating surface phonon polaritons. We apply infrared near-field imaging and -spectroscopy enabled by a tunable ultra…
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Membranes of complex oxides like perovskite SrTiO3 extend the multi-functional promise of oxide electronics into the nanoscale regime of two-dimensional materials. Here we demonstrate that free-standing oxide membranes supply a reconfigurable platform for nano-photonics based on propagating surface phonon polaritons. We apply infrared near-field imaging and -spectroscopy enabled by a tunable ultrafast laser to study pristine nano-thick SrTiO3 membranes prepared by hybrid molecular beam epitaxy. As predicted by coupled mode theory, we find that strong coupling of interfacial polaritons realizes symmetric and antisymmetric hybridized modes with simultaneously tunable negative and positive group velocities. By resolving reflection of these propagating modes from membrane edges, defects, and substrate structures, we quantify their dispersion with position-resolved nano-spectroscopy. Remarkably, we find polariton negative dispersion is both robust and tunable through choice of membrane dielectric environment and thickness and propose a novel design for in-plane Veselago lensing harnessing this control. Our work lays the foundation for tunable transformation optics at the nanoscale using polaritons in a wide range of freestanding complex oxide membranes.
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Submitted 27 June, 2025; v1 submitted 2 March, 2025;
originally announced March 2025.
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Metallicity and Anomalous Hall Effect in Epitaxially-Strained, Atomically-thin RuO2 Films
Authors:
Seung Gyo Jeong,
Seungjun Lee,
Bonnie Lin,
Zhifei Yang,
In Hyeok Choi,
Jin Young Oh,
Sehwan Song,
Seung wook Lee,
Sreejith Nair,
Rashmi Choudhary,
Juhi Parikh,
Sungkyun Park,
Woo Seok Choi,
Jong Seok Lee,
James M. LeBeau,
Tony Low,
Bharat Jalan
Abstract:
The anomalous Hall effect (AHE), a hallmark of time-reversal symmetry breaking, has been reported in rutile RuO2, a debated metallic altermagnetic candidate. Previously, AHE in RuO2 was observed only in strain-relaxed thick films under extremely high magnetic fields (~50 T). Yet, in ultrathin strained films with distinctive anisotropic electronic structures, there are no reports, likely due to dis…
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The anomalous Hall effect (AHE), a hallmark of time-reversal symmetry breaking, has been reported in rutile RuO2, a debated metallic altermagnetic candidate. Previously, AHE in RuO2 was observed only in strain-relaxed thick films under extremely high magnetic fields (~50 T). Yet, in ultrathin strained films with distinctive anisotropic electronic structures, there are no reports, likely due to disorder and defects suppressing metallicity thus hindering its detection. Here, we demonstrate that ultrathin, fully-strained 2 nm TiO2/t nm RuO2/TiO2 (110) heterostructures, grown by hybrid molecular beam epitaxy, retain metallicity and exhibit a sizeable AHE at a significantly lower magnetic field (< 9 T). Density functional theory calculations reveal that epitaxial strain stabilizes a non-compensated magnetic ground state and reconfigures magnetic ordering in RuO2 (110) thin films. These findings establish ultrathin RuO2 as a platform for strain-engineered magnetism and underscore the transformative potential of epitaxial design in advancing spintronic technologies.
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Submitted 19 January, 2025;
originally announced January 2025.
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Site-Specific Plan-view (S)TEM Sample Preparation from Thin Films using a Dual-Beam FIB-SEM
Authors:
Supriya Ghosh,
Fengdeng Liu,
Sreejith Nair,
Bharat Jalan,
K. Andre Mkhoyan
Abstract:
Plan-view transmission electron microscopy (TEM) samples are key to understand the atomic structure and associated properties of materials along their growth orientation, especially for thin films that are stain-engineered onto different substrates for property tuning. In this work, we present a method to prepare high-quality plan-view samples for analytical STEM study from thin-films using a dual…
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Plan-view transmission electron microscopy (TEM) samples are key to understand the atomic structure and associated properties of materials along their growth orientation, especially for thin films that are stain-engineered onto different substrates for property tuning. In this work, we present a method to prepare high-quality plan-view samples for analytical STEM study from thin-films using a dual-beam focused ion beam scanning electron microscope (FIB-SEM) system. The samples were prepared from thin films of perovskite oxides and metal oxides ranging from 20-80 nm thicknesses, grown on different substrates using molecular beam epitaxy. A site-specific sample preparation from the area of interest is described, which includes sample attachment and thinning techniques to minimize damage to the final TEM samples. While optimized for the thin film-like geometry, this method can be extended to other site-specific plan-view samples from bulk materials. Aberration-corrected scanning (S)TEM was used to access the quality of the thin film in each sample. This enabled direct visualization of line defects in perovskite BaSnO3 and Ir particle formation and texturing in IrO2 films.
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Submitted 4 January, 2024;
originally announced January 2024.
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Fast and Facile Synthesis Route to Epitaxial Oxide Membrane Using a Sacrificial Layer
Authors:
Shivasheesh Varshney,
Sooho Choo,
Liam Thompson,
Zhifei Yang,
Jay Shah,
Jiaxuan Wen,
Steven J. Koester,
K. Andre Mkhoyan,
Alexander McLeod,
Bharat Jalan
Abstract:
The advancement in thin-film exfoliation for synthesizing oxide membranes has opened up new possibilities for creating artificially-assembled heterostructures with structurally and chemically incompatible materials. The sacrificial layer method is a promising approach to exfoliate as-grown films from a compatible material system, allowing their integration with dissimilar materials. Nonetheless, t…
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The advancement in thin-film exfoliation for synthesizing oxide membranes has opened up new possibilities for creating artificially-assembled heterostructures with structurally and chemically incompatible materials. The sacrificial layer method is a promising approach to exfoliate as-grown films from a compatible material system, allowing their integration with dissimilar materials. Nonetheless, the conventional sacrificial layers often possess intricate stoichiometry, thereby constraining their practicality and adaptability, particularly when considering techniques like Molecular Beam Epitaxy (MBE). This is where easy-to-grow binary alkaline earth metal oxides with a rock salt crystal structure are useful. These oxides, which include (Mg, Ca, Sr, Ba)O, can be used as a sacrificial layer covering a much broader range of lattice parameters compared to conventional sacrificial layers and are easily dissolvable in deionized water. In this study, we show the epitaxial growth of single-crystalline perovskite SrTiO3 (STO) on sacrificial layers consisting of crystalline SrO, BaO, and Ba1-xCaxO films, employing a hybrid MBE method. Our results highlight the rapid (< 5 minutes) dissolution of the sacrificial layer when immersed in deionized water, facilitating the fabrication of millimeter-sized STO membranes. Using high-resolution x-ray diffraction, atomic-force microscopy, scanning transmission electron microscopy, impedance spectroscopy, and scattering-type near-field optical microscopy (SNOM), we demonstrate epitaxial STO membranes with bulk-like intrinsic dielectric properties. The employment of alkaline earth metal oxides as sacrificial layers is likely to simplify membrane synthesis, particularly with MBE, thus expanding research possibilities.
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Submitted 19 November, 2023;
originally announced November 2023.
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Free-Standing Epitaxial SrTiO$_3$ Nanomembranes via Remote Epitaxy using Hybrid Molecular Beam Epitaxy
Authors:
Hyojin Yoon,
Tristan K. Truttmann,
Fengdeng Liu,
Bethany E. Matthews,
Sooho Choo,
Qun Su,
Vivek Saraswat,
Sebastian Manzo,
Michael S. Arnold,
Mark E. Bowden,
Jason K. Kawasaki,
Steven J. Koester,
Steven R. Spurgeon,
Scott A. Chambers,
Bharat Jalan
Abstract:
The epitaxial growth of functional materials using a substrate with a graphene layer is a highly desirable method for improving structural quality and obtaining free-standing epitaxial nano-membranes for scientific study, applications, and economical reuse of substrates. However, the aggressive oxidizing conditions typically employed to grow epitaxial perovskite oxides can damage graphene. Here, w…
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The epitaxial growth of functional materials using a substrate with a graphene layer is a highly desirable method for improving structural quality and obtaining free-standing epitaxial nano-membranes for scientific study, applications, and economical reuse of substrates. However, the aggressive oxidizing conditions typically employed to grow epitaxial perovskite oxides can damage graphene. Here, we demonstrate a technique based on hybrid molecular beam epitaxy that does not require an independent oxygen source to achieve epitaxial growth of complex oxides without damaging the underlying graphene. The technique produces films with self-regulating cation stoichiometry control and epitaxial orientation to the oxide substrate. Furthermore, the films can be exfoliated and transferred to foreign substrates while leaving the graphene on the original substrate. These results open the door to future studies of previously unattainable free-standing nano-membranes grown in an adsorption-controlled manner by hybrid molecular beam epitaxy, and has potentially important implications for the commercial application of perovskite oxides in flexible electronics.
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Submitted 17 June, 2022;
originally announced June 2022.
