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Isolation and characterization of atomically thin mica phyllosilicates
Authors:
Kristine L. Haley,
Noah F. Lee,
Vergil M. Schreiber,
Nicholas T. Pereira,
Randy M. Sterbentz,
Timothy Y. Chung,
Joshua O. Island
Abstract:
One of the roadblocks to employing two-dimensional (2D) materials in next generation devices is the lack of high quality insulators. Insulating layered materials with inert and atomically flat surfaces are ideal for high performance transistors and this has been exemplified with commonly used boron nitride. While the list of insulating 2D materials is limited, the earth-abundant phyllosilicates ar…
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One of the roadblocks to employing two-dimensional (2D) materials in next generation devices is the lack of high quality insulators. Insulating layered materials with inert and atomically flat surfaces are ideal for high performance transistors and this has been exemplified with commonly used boron nitride. While the list of insulating 2D materials is limited, the earth-abundant phyllosilicates are particularly attractive candidates. Here, we investigate the properties of atomically thin biotite and muscovite, the most common and commercially important micas from the rock-forming minerals. From a group of five natural bulk samples, energy dispersive X-ray spectroscopy is used to classify exfoliated flakes into three types of biotite, including the phlogopite endmember, and two muscovites. We provide a catalog of RGB contrast values for exfoliated flakes ranging from bilayer to approximately 175 nm. Additionally, we report the complex index of refraction for all investigated materials based on micro-reflectance measurements. Our findings suggest that earth-abundant phyllosilicates could serve as scalable insulators for logic devices employing 2D materials, potentially overcoming current limitations in the field.
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Submitted 23 August, 2024;
originally announced August 2024.
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Quantum logic control and precision measurements of molecular ions in a ring trap -- a new approach for testing fundamental symmetries
Authors:
Yan Zhou,
Joshua O. Island,
Matt Grau
Abstract:
We present a new platform facilitating quantum logic control of polar molecular ions in a segmented ring ion trap, paving the way for precision measurements. This approach focuses on achieving near-unity state preparation and detection, as well as long spin coherence. A distinctive aspect lies in separating state preparation and detection conducted in a static frame, from parity-selective spin-pre…
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We present a new platform facilitating quantum logic control of polar molecular ions in a segmented ring ion trap, paving the way for precision measurements. This approach focuses on achieving near-unity state preparation and detection, as well as long spin coherence. A distinctive aspect lies in separating state preparation and detection conducted in a static frame, from parity-selective spin-precession in a rotating frame. This method can be applied to a wide range of ion species and will be used to search for the electron's electric dipole moment and the nuclear magnetic quadrupole moment.
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Submitted 25 July, 2023; v1 submitted 20 October, 2022;
originally announced October 2022.
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An automated system for strain engineering and straintronics of 2D materials
Authors:
Onur Çakıroğlu,
Joshua O. Island,
Yong Xie,
Riccardo Frisenda,
Andres Castellanos-Gomez
Abstract:
This work presents an automated three-point bending apparatus that can be used to study strain engineering and straintronics in two-dimensional materials. We benchmark the system by reporting reproducible strain tuned micro-reflectance, Raman, and photoluminescence spectra for monolayer molybdenum disulfide (MoS2). These results are in good agreement with reported literature using conventional ben…
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This work presents an automated three-point bending apparatus that can be used to study strain engineering and straintronics in two-dimensional materials. We benchmark the system by reporting reproducible strain tuned micro-reflectance, Raman, and photoluminescence spectra for monolayer molybdenum disulfide (MoS2). These results are in good agreement with reported literature using conventional bending apparatus. We further utilize the system to automate strain investigations of straintronic devices by measuring the piezoresistive effect and the strain effect on photoresponse in an MoS2 electrical device. The details of the construction of the straightforward system are given and we anticipate it can be easily implemented for study of strain engineering and straintronics in a wide variety of 2D material systems.
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Submitted 17 October, 2022;
originally announced October 2022.
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Investigating laser induced phase engineering in MoS2 transistors
Authors:
Nikos Papadopoulos,
Joshua O. Island,
Herre S. J. van der Zant,
Gary A. Steele
Abstract:
Phase engineering of MoS2 transistors has recently been demonstrated and has led to record low contact resistances. The phase patterning of MoS2 flakes with laser radiation has also been realized via spectroscopic methods, which invites the potential of controlling the metallic and semiconducting phases of MoS2 transistors by simple light exposure. Nevertheless, the fabrication and demonstration o…
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Phase engineering of MoS2 transistors has recently been demonstrated and has led to record low contact resistances. The phase patterning of MoS2 flakes with laser radiation has also been realized via spectroscopic methods, which invites the potential of controlling the metallic and semiconducting phases of MoS2 transistors by simple light exposure. Nevertheless, the fabrication and demonstration of laser patterned MoS2 devices starting from the metallic polymorph has not been demonstrated yet. Here, we study the effects of laser radiation on 1T/1T'-MoS2 transistors with the prospect of driving an in-situ phase transition to the 2H-polymorph through light exposure. We find that although the Raman peaks of 2H-MoS2 become more prominent and the ones from the 1T/1T' phase fade after the laser exposure, the semiconducting properties of the laser patterned devices are not fully restored and the laser treatment ultimately leads to degradation of the transport channel.
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Submitted 27 September, 2018;
originally announced September 2018.
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Long-range Scanning Tunneling Microscope for the study of nanostructures on insulating substrates
Authors:
Aday Molina-Mendoza,
José Gabriel Rodrigo,
Joshua Island,
Enrique Burzuri,
Gabino Rubio-Bollinger,
Herre S. J. van der Zant,
Nicolás Agraït
Abstract:
The Scanning Tunneling Microscope is a powerful tool for studying the electronic properties at the atomic level, however it's relatively small scanning range and the fact that it can only operate on conducting samples prevents its application to study heterogeneous samples consisting on conducting and insulating regions. Here we present a long-range scanning tunneling microscope capable of detecti…
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The Scanning Tunneling Microscope is a powerful tool for studying the electronic properties at the atomic level, however it's relatively small scanning range and the fact that it can only operate on conducting samples prevents its application to study heterogeneous samples consisting on conducting and insulating regions. Here we present a long-range scanning tunneling microscope capable of detecting conducting micro and nanostructures on insulating substrates using a technique based on the capacitance between the tip and the sample and performing STM studies.
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Submitted 23 October, 2013; v1 submitted 20 September, 2013;
originally announced September 2013.
