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Impact of thermal annealing on the interaction between monolayer MoS2 and Au
Authors:
Stephanie Lough,
Jesse E. Thompson,
Darian Smalley,
Rahul Rao,
Masahiro Ishigami
Abstract:
We have investigated the impact of thermal annealing on the interaction of single layer MoS2 and Au using Raman Spectroscopy. We found MoS2 has two main modes of interactions with the underlying Au being either weakly-coupled or strongly-coupled. The regions strongly-coupled to Au are hybridized to Au, minimally strained, and electron-doped. The weakly-coupled regions are found to be slightly hole…
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We have investigated the impact of thermal annealing on the interaction of single layer MoS2 and Au using Raman Spectroscopy. We found MoS2 has two main modes of interactions with the underlying Au being either weakly-coupled or strongly-coupled. The regions strongly-coupled to Au are hybridized to Au, minimally strained, and electron-doped. The weakly-coupled regions are found to be slightly hole-doped with tensile strain of 1.0 %. The observed nanoscale inhomogeneities in doping would result in Au contacts having a large variability in performance. The overall areal coverage of the strongly-coupled regions is not increased by thermal annealing, and the variability in the degree of hybridization increases at annealing temperatures above 100 °C. Our data also show that monolayer MoS2 starts to decouple from Au around 100 °C, becoming fully decoupled above 250 °C, suggesting that monolayer MoS2 produced by Au-assisted mechanical exfoliation may be more easily transferred off Au at elevated temperatures.
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Submitted 8 November, 2023;
originally announced November 2023.
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Autonomous Investigations over WS$_2$ and Au{111} with Scanning Probe Microscopy
Authors:
John C. Thomas,
Antonio Rossi,
Darian Smalley,
Luca Francaviglia,
Zhuohang Yu,
Tianyi Zhang,
Shalini Kumari,
Joshua A. Robinson,
Mauricio Terrones,
Masahiro Ishigami,
Eli Rotenberg,
Edward S. Barnard,
Archana Raja,
Ed Wong,
D. Frank Ogletree,
Marcus M. Noack,
Alexander Weber-Bargioni
Abstract:
Individual atomic defects in 2D materials impact their macroscopic functionality. Correlating the interplay is challenging, however, intelligent hyperspectral scanning tunneling spectroscopy (STS) mapping provides a feasible solution to this technically difficult and time consuming problem. Here, dense spectroscopic volume is collected autonomously via Gaussian process regression, where convolutio…
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Individual atomic defects in 2D materials impact their macroscopic functionality. Correlating the interplay is challenging, however, intelligent hyperspectral scanning tunneling spectroscopy (STS) mapping provides a feasible solution to this technically difficult and time consuming problem. Here, dense spectroscopic volume is collected autonomously via Gaussian process regression, where convolutional neural networks are used in tandem for spectral identification. Acquired data enable defect segmentation, and a workflow is provided for machine-driven decision making during experimentation with capability for user customization. We provide a means towards autonomous experimentation for the benefit of both enhanced reproducibility and user-accessibility. Hyperspectral investigations on WS$_2$ sulfur vacancy sites are explored, which is combined with local density of states confirmation on the Au{111} herringbone reconstruction. Chalcogen vacancies, pristine WS$_2$, Au face-centered cubic, and Au hexagonal close packed regions are examined and detected by machine learning methods to demonstrate the potential of artificial intelligence for hyperspectral STS mapping.
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Submitted 2 May, 2022; v1 submitted 7 October, 2021;
originally announced October 2021.
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Multiphonon Raman Scattering in Graphene
Authors:
Rahul Rao,
Derek Tishler,
Jyoti Katoch,
Masa Ishigami
Abstract:
We report multiphonon Raman scattering in graphene samples. Higher order combination modes involving 3 phonons and 4 phonons are observed in single-layer (SLG), bi-layer (BLG), and few layer (FLG) graphene samples prepared by mechanical exfoliation. The intensity of the higher order phonon modes (relative to the G peak) is highest in SLG and decreases with increasing layers. In addition, all highe…
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We report multiphonon Raman scattering in graphene samples. Higher order combination modes involving 3 phonons and 4 phonons are observed in single-layer (SLG), bi-layer (BLG), and few layer (FLG) graphene samples prepared by mechanical exfoliation. The intensity of the higher order phonon modes (relative to the G peak) is highest in SLG and decreases with increasing layers. In addition, all higher order modes are observed to upshift in frequency almost linearly with increasing graphene layers, betraying the underlying interlayer van der Waals interactions.
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Submitted 17 August, 2011;
originally announced August 2011.
