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Analysis of growth of silicon thin films on textured and non-textured surface
Authors:
S. M. Iftiquar,
S. N. Riaz,
S. Mahapatra
Abstract:
Hydrogenated amorphous silicon alloy films are generally deposited by radio frequency plasma enhanced chemical vapor deposition (RF PECVD) technique on various types of substrates. Generally it is assumed that film quality remains unchanged when deposited on textured or non-textured substrates. Here we analyzed the difference in growth of thin film silicon layers when deposited in a textured and a…
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Hydrogenated amorphous silicon alloy films are generally deposited by radio frequency plasma enhanced chemical vapor deposition (RF PECVD) technique on various types of substrates. Generally it is assumed that film quality remains unchanged when deposited on textured or non-textured substrates. Here we analyzed the difference in growth of thin film silicon layers when deposited in a textured and a non-textured surface. In this investigation characteristics of two solar cells were compared, where one cell was prepared on a textured surface ( Cell-A) while the other prepared on a non-textured surface (Cell-B). Defect analysis of the devices were carried out by simulation and device modeling. It shows that the intrinsic film deposited on a textured surface was more defective ($2.4\times 10^{17}$ cm$^{-3}$) than that deposited on a flat surface ($3.2\times 10^{16}$ cm$^{-3}$). Although the primary differences in these two cells were thickness of the active layer and nature of surface texturing, the simulation results show that thin film deposited on a textured surface may acquire an increased defect density than that deposited on a flat surface. Lower effective flux density of $SiH_{3}$ precursors on the textured surface can be one of the reasons for higher defect density in the film deposited on textured surface. An Improved light coupling can be achieved by using a thinner doped window layer. By changing the thickness from 15 nm to 3 nm, the short circuit current density increased from 16.4 mA/cm$^{2}$ to 20.96 mA/cm$^{2}$ and efficiency increased from $9.4\%$ to $12.32\%$.
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Submitted 14 March, 2024;
originally announced April 2024.
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Investigation of low band gap silicon alloy thin film solar cell for improving short and long wavelength response
Authors:
S. M. Iftiquar,
J. Yi
Abstract:
Numerical simulation of a solar cell can provide various information that can be useful to maximize its power conversion efficiency (PCE). In that respect we carried out a set of numerical simulation using AFORS-HET simulation program. Separately, in order to get a better understanding, the optical absorption in individual layers devices were analyzed. Current-voltage characteristic curve of a ref…
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Numerical simulation of a solar cell can provide various information that can be useful to maximize its power conversion efficiency (PCE). In that respect we carried out a set of numerical simulation using AFORS-HET simulation program. Separately, in order to get a better understanding, the optical absorption in individual layers devices were analyzed. Current-voltage characteristic curve of a reference cell (Cell-A) was used as the starting device. The PCE of the reference device was $8.85\%$ with short circuit current density $J_{sc}$ of 15.43 mA/cm$^{2}$ and fill factor (FF) of $68.3\%$. However, it was noticed that the reference cell had high parasitic optical absorption at the window layer and the device structure was also not optimized. After suitable optimization the PCE of this device (Cell-B2) improves to $11.59\%$ ($J_{sc}$ and FF of 13.0 mA/cm$^{2}$ and $87\%$ respectively). The results show that the effective optical absorption in the active layer can be improved significantly by optimizing the device structure. The short wavelength response can be improved by reducing the parasitic optical absorption by the doped window layer, while its long wavelength response improves by raising effective absorption length of the active layer. Furthermore, its optimum thickness, for the highest possible PCE, is found to be dependent upon the material properties, more importantly on its defect density.
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Submitted 8 March, 2024; v1 submitted 7 March, 2024;
originally announced March 2024.
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Variation in whispering gallery mode of resonance in a trapped and levitated liquid micro cavity
Authors:
S. M. Iftiquar
Abstract:
Whispering gallery mode (WGM) of resonance occurs when a traveling wave faces grazing reflection and confinement at the inner surface of a spherical cavity. Such a resonance was observed with micrometer sized liquid droplet and with light of sub-micron wavelength. The resonance occurs when specific boundary conditions are fulfilled, following a relation between optical path length (that is related…
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Whispering gallery mode (WGM) of resonance occurs when a traveling wave faces grazing reflection and confinement at the inner surface of a spherical cavity. Such a resonance was observed with micrometer sized liquid droplet and with light of sub-micron wavelength. The resonance occurs when specific boundary conditions are fulfilled, following a relation between optical path length (that is related to radius of the droplet) and resonating wavelength. Therefore, a change in WGM wavelength will be related to dimension of the droplet. We observed a shift in such a resonance spectra. For a smaller droplet the observed blue shift in the WGM were 1.5, 0.7, 3.7 nm. Following the resonance condition, it was estimated that such a shift corresponds to a reduction in radius of the droplet by 1.3, 0.6, 3.3 nm respectively. This was obtained with a droplet of radius about 600 nm. The droplet was created from a solution of glycerol, methanol and rhodamine 6G dye, and was trapped and levitated in a modified Paul trap. The WGMs were created by optically exciting the dye material from an external 532 nm cw laser beam. A shift in the WGM was observed with time, during a gradual increase in power of the excitation laser, and a reason for such a shift was thought to be thermal evaporation of the liquid from the droplet. For a larger droplet an initial 0.1 nm thermal expansion was also estimated because initially a red-shift of the WGM was observed, probably because of thermal expansion, which was negligible for a smaller droplet. For the smaller droplet, the estimated rate of change of WGM with radius, was 1.129. For larger droplet, this rate is lower.
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Submitted 23 February, 2024;
originally announced February 2024.
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Investigating intrinsic silicon oxide and a lightly doped p-type layer for evolution of tail states and estimating its impact as a passivation layer in a HIT type device
Authors:
S M Iftiquar
Abstract:
Hydrogenated amorphous silicon is well known for its various alloys and wide ranging opto-electronic properties. Hydrogenated silicon sub-oxide (aSiO:H) is one of them. The effect of boron doping on optoelectronic properties of the aSiO:H have been investigated with intrinsic and delta-doped materials. The Urbach energy of the tail and midgap defect states of the intrinsic and lightly doped(0.01%…
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Hydrogenated amorphous silicon is well known for its various alloys and wide ranging opto-electronic properties. Hydrogenated silicon sub-oxide (aSiO:H) is one of them. The effect of boron doping on optoelectronic properties of the aSiO:H have been investigated with intrinsic and delta-doped materials. The Urbach energy of the tail and midgap defect states of the intrinsic and lightly doped(0.01% gas phase doping) materials were found to be 103, 151 meV and 8.19x1016 , 5.47x1017 cm-3 respectively. As a result of the 0.01% doping a reduction in optical gap was observed from 1.99 to 1.967 eV along with a shift in Fermi level by 0.258eV, indicating an efficient boron doping of the intrinsic silicon oxide material. The lightly doped p-type layer was used to simulate device characteristics in amorphous silicon (aSi:H) and HIT-type solar cell. In the aSi:H device the power conversion efficiency (PCE) was moderate while in a HIT-type device the PCE was 26.4%. It indicated that a good quality silicon oxide layer can be an attractive passivation layer for a HIT type device. It further indicated that defect density of the passivation layer can have a significant impact on performance of a HIT type device. The primary difference of the two passivation layers (intrinsic and delta-doped) are the difference in mid-gap and tail states. Passivation layer with a higher mid-gap state leads to poorer device performance. Therefore, it highlights the importance of using a less defective passivation layer to improve device performance.
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Submitted 10 December, 2023;
originally announced December 2023.
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Investigation of variation in fluorescence intensity from rhodamine 6G Dye
Authors:
S. M. Iftiquar,
H. Zilay
Abstract:
Variation in fluorescence intensity from rhodamine 6G dye was investigated. A small volume of dye solution was optically excited with a 0.4 mW, 532nm wavelength cw-laser light. The dye was dissolved in methanol and glycerol for a concentration of 10mg/ml. With the optical excitation, initially the fluorescence intensity was observed to rise, and then it decayed, along with a steady shift of fluore…
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Variation in fluorescence intensity from rhodamine 6G dye was investigated. A small volume of dye solution was optically excited with a 0.4 mW, 532nm wavelength cw-laser light. The dye was dissolved in methanol and glycerol for a concentration of 10mg/ml. With the optical excitation, initially the fluorescence intensity was observed to rise, and then it decayed, along with a steady shift of fluorescence peak from 562 nm to 543 nm. The observation of initial enhancement in fluorescence from start to 7 minutes of excitation, can partly be due to the low excitation power, therefore slower rate of change of fluorescence intensity with time. Simulation studies indicate that the photo bleaching was taking place from all the energy states of the dye molecules, which is an extension of the concept that the photo bleaching takes place at the excited triplet state whereas the fluorescence takes place due to transition between ground and excited singlet states. A steady shift in fluorescence peak position, from 562 nm to 543 nm, was observed during the fluorescence life of the dye, at a rate of 0.0113 nm/s during fluorescence enhancement and 0.026 nm/s during photo bleaching.
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Submitted 29 August, 2023;
originally announced October 2023.
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Wide range and highly sensitive atomic magnetometry with Rb vapor
Authors:
S. M. Iftiquar
Abstract:
We have developed a technique in which Rb atomic response to weak magnetic field is high and an efficient rotation of linearly polarized laser beam results in efficient magnetometry. 85Rb isotope has been used for the magnetometry in an ordinary vapor cell without any paraffin coating to its inner wall. A linear regime of Faraday rotation of about 25 microT has been observed with atomic number den…
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We have developed a technique in which Rb atomic response to weak magnetic field is high and an efficient rotation of linearly polarized laser beam results in efficient magnetometry. 85Rb isotope has been used for the magnetometry in an ordinary vapor cell without any paraffin coating to its inner wall. A linear regime of Faraday rotation of about 25 microT has been observed with atomic number density within the vapor cell of about 10^9 cm-3.
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Submitted 20 January, 2011; v1 submitted 16 November, 2007;
originally announced November 2007.
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Electromagnetically induced transparency at high optical power
Authors:
S. M. Iftiquar
Abstract:
We observe electromagnetically induced transparency (EIT) in Rb vapor at various optical intensities, starting from below saturation to several times the saturation intensity. The observed Lorentzian width of the EIT signal is very small. Solving the time dependant density matrix equation of motion with a phenomenological decay constant, we find an expression suitable in explaining the EIT signal.…
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We observe electromagnetically induced transparency (EIT) in Rb vapor at various optical intensities, starting from below saturation to several times the saturation intensity. The observed Lorentzian width of the EIT signal is very small. Solving the time dependant density matrix equation of motion with a phenomenological decay constant, we find an expression suitable in explaining the EIT signal. In this experimental observation and theoretical analysis intensity of EIT signal and its Lorentzian width increases with Rabi frequency of optical field.
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Submitted 20 January, 2011; v1 submitted 16 November, 2007;
originally announced November 2007.
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Sub-natural width of transparency window in 85Rb vapor with D2 transition,
Authors:
S. M. Iftiquar
Abstract:
We study 85Rb atomic vapor for electromagnetically induced transparency (EIT) and obtain sub-natural EIT spectra at optical power higher than saturation intensity. It is shown that spectral width of transmission and intensity of EIT signal increases with intensity of optical field, which is one of the desirable features for slow light and quantum information processing. A details analysis has been…
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We study 85Rb atomic vapor for electromagnetically induced transparency (EIT) and obtain sub-natural EIT spectra at optical power higher than saturation intensity. It is shown that spectral width of transmission and intensity of EIT signal increases with intensity of optical field, which is one of the desirable features for slow light and quantum information processing. A details analysis has been done on such an atomic system.
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Submitted 20 January, 2011; v1 submitted 15 November, 2007;
originally announced November 2007.
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Electromagnetically induced transparency in two channels of a $Λ$ system
Authors:
S. M. Iftiquar
Abstract:
We show two channel electromagnetically induced transparency (EIT) spectra at various optical power. The two channels are coupling field and probe field absorption. It is shown that EIT width and intensity increases linearly with pump power. A density matrix calculation is used to determine nature of EIT spectra induced by optical field. It has been observed that EIT occurs in cases when couplin…
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We show two channel electromagnetically induced transparency (EIT) spectra at various optical power. The two channels are coupling field and probe field absorption. It is shown that EIT width and intensity increases linearly with pump power. A density matrix calculation is used to determine nature of EIT spectra induced by optical field. It has been observed that EIT occurs in cases when coupling laser is at fixed frequency while probe laser frequency is scanned, when coupling laser is frequency scanned and probe is at fixed frequency.
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Submitted 14 November, 2007;
originally announced November 2007.
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Comment on`` Angular dependence of Dicke-narrowed electromagnetically induced transparency resonances''
Authors:
S. M. Iftiquar
Abstract:
We demonstrate that the experimental results reported by M. Shuker, O. Firstenberg, R. Pugatch, A. Ben-Kish,1 A. Ron, and N. Davidson, Phys. Rev. A {\bf 76}, 023813 (2007) as Dicke narrowing of electromagnetically induced transparency, does not match with theory.
We demonstrate that the experimental results reported by M. Shuker, O. Firstenberg, R. Pugatch, A. Ben-Kish,1 A. Ron, and N. Davidson, Phys. Rev. A {\bf 76}, 023813 (2007) as Dicke narrowing of electromagnetically induced transparency, does not match with theory.
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Submitted 13 November, 2007;
originally announced November 2007.
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Subnatural linewidth using electromagnetically induced transparency in Doppler-broadened vapor
Authors:
S. M. Iftiquar,
G. R. Karve,
Vasant Natarajan
Abstract:
We obtain subnatural linewidth (i.e. $<Γ$) for probe absorption in room-temperature Rb vapor using electromagnetically induced transparency (EIT) in a $Λ$ system. For stationary atoms, the EIT dip for a resonant control laser is as wide as the control Rabi frequency $Ω_c$. But in thermal vapor, the moving atoms fill the transparency band so that the final EIT dip remains subnatural even when…
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We obtain subnatural linewidth (i.e. $<Γ$) for probe absorption in room-temperature Rb vapor using electromagnetically induced transparency (EIT) in a $Λ$ system. For stationary atoms, the EIT dip for a resonant control laser is as wide as the control Rabi frequency $Ω_c$. But in thermal vapor, the moving atoms fill the transparency band so that the final EIT dip remains subnatural even when $Ω_c > Γ$. We observe linewidths as small as $Γ/7$ in the $D_2$ line of Rb.
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Submitted 19 August, 2010; v1 submitted 1 November, 2007;
originally announced November 2007.
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High-power doughnut beam generation for atom-funnel experiment
Authors:
S. M. Iftiquar,
H. Ito,
K. Totsuka,
A. Takamizawa,
M. Ohtsu
Abstract:
We have generated high power doughnut beam suitable for atom funnel experiment with the conversion efficiency of about 50 %.
We have generated high power doughnut beam suitable for atom funnel experiment with the conversion efficiency of about 50 %.
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Submitted 6 June, 2003;
originally announced June 2003.
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Mode conversion in optical beam in order to create funnel shaped optical near field to collect cold Rb atoms from MOT
Authors:
S. M. Iftiquar
Abstract:
Doughnut shaped light beam has been generated from Gaussian mode ($TEM_{00}$) cw-Ti sapphire laser. After splitting the pump beam into two equal intensity components and introducing unequal convergence and phase delay while they are recombined it results in doughnut mode. Such a beam is tunable and have long propagation length. The evanescent field generated by 360 mW (at 780 nm wavelength) of s…
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Doughnut shaped light beam has been generated from Gaussian mode ($TEM_{00}$) cw-Ti sapphire laser. After splitting the pump beam into two equal intensity components and introducing unequal convergence and phase delay while they are recombined it results in doughnut mode. Such a beam is tunable and have long propagation length. The evanescent field generated by 360 mW (at 780 nm wavelength) of such a beam creates optical field of 600 nm decay length with a 5.75 neV repulsive dipole potential. Thus cold Rb atoms (at 10{$μ$}K or less temperature) released from MOT can be reflected by the surface so that the atoms are collected ultimately at the bottom of the prism. By focussing such doughnut beam with 8 cm focal length converging lens, the dark radius reduces to 22{$μ$}. We also observe such beam to contain azimuthal phase as well as radial phase distribution.
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Submitted 3 June, 2003;
originally announced June 2003.
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Attempt to Generate Narrow Linewidth, CW Terahertz Radiation by Using Optical Frequency Comb
Authors:
S. M. Iftiquar,
Kiyomi Sakai,
Masahiko Tani,
Bambang Widiyatmoko,
Motonobu Kourogi,
Motoichi Otsu
Abstract:
We report on an attempt to generate highly stable continuous terahertz (THz) wave by using optical frequency comb (OFC). About 10-nm wide OFC has been generated through a deep phase modulation of a 852 nm laser line in lithium niobate crystal cavity. The multiple optical modes (side bands) of the OFC, which are equally separated from each other by the modulation frequency (=6 GHz) are taken as t…
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We report on an attempt to generate highly stable continuous terahertz (THz) wave by using optical frequency comb (OFC). About 10-nm wide OFC has been generated through a deep phase modulation of a 852 nm laser line in lithium niobate crystal cavity. The multiple optical modes (side bands) of the OFC, which are equally separated from each other by the modulation frequency (=6 GHz) are taken as the frequency reference. When another semiconductor laser is frequency locked, the stability of the difference frequency between the master laser and the second laser is improved on the same order of the RF modulator. An ultra-narrow line and tunable THz radiation source can be achieved by photomixing of this stable difference-frequency optical beat in a photoconductive antenna.
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Submitted 29 May, 2003;
originally announced May 2003.
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Excitation Of A Funnel-Shape Optical Near Field By The Laguarre-Gaussian Doughnut Beam
Authors:
S. M. Iftiquar,
Haruhiko Ito,
Akifumi Takamizawa,
Motoichi Ohtsu
Abstract:
Optical near field has been generated by Laguarre-Gaussian doughnut beam on inner surface of "atom funnel". The resulting optical near field has been measured with the help of fiber probe and a consequent effect on cold atoms- released from MOT, has been estimated. Atoms with temperature less than 10 micro_kelvin can be reflected by the optical near field.
Optical near field has been generated by Laguarre-Gaussian doughnut beam on inner surface of "atom funnel". The resulting optical near field has been measured with the help of fiber probe and a consequent effect on cold atoms- released from MOT, has been estimated. Atoms with temperature less than 10 micro_kelvin can be reflected by the optical near field.
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Submitted 29 May, 2003;
originally announced May 2003.
