Showing 1–6 of 6 results for author: Htoon, H

Telecom-wavelength Single-photon Emitters in Multi-layer InSe

Authors: Huan Zhao, Saban Hus, Jinli Chen, Xiaodong Yan, Ben Lawrie, Stephen Jesse, An-Ping Li, Liangbo Liang, Han Htoon

Abstract: The development of robust and efficient single photon emitters (SPEs) at telecom wavelengths is critical for advancements in quantum information science. Two-dimensional (2D) materials have recently emerged as promising sources for SPEs, owing to their high photon extraction efficiency, facile coupling to external fields, and seamless integration into photonic circuits. In this study, we demonstra… ▽ More The development of robust and efficient single photon emitters (SPEs) at telecom wavelengths is critical for advancements in quantum information science. Two-dimensional (2D) materials have recently emerged as promising sources for SPEs, owing to their high photon extraction efficiency, facile coupling to external fields, and seamless integration into photonic circuits. In this study, we demonstrate the creation of SPEs emitting in the 1000 to 1550 nm near-infrared range by coupling 2D indium selenide (InSe) with strain-inducing nanopillar arrays. The emission wavelength exhibits a strong dependence on the number of layers. Hanbury Brown and Twiss experiments conducted at 10 K reveal clear photon antibunching, confirming the single-photon nature of the emissions. Density-functional-theory calculations and scanning-tunneling-microscopy analyses provide insights into the electronic structures and defect states, elucidating the origins of the SPEs. Our findings highlight the potential of multilayer 2D metal monochalcogenides for creating SPEs across a broad spectral range, paving the way for their integration into quantum communication technologies. △ Less

Submitted 22 October, 2024; originally announced October 2024.

Comments: 19 pages, 6 figures

Quantum Emitters in Aluminum Nitride Induced by Zirconium Ion Implantation

Authors: Alexander Senichev, Zachariah O. Martin, Yongqiang Wang, Owen M. Matthiessen, Alexei Lagutchev, Han Htoon, Alexandra Boltasseva, Vladimir M. Shalaev

Abstract: The integration of solid-state single-photon sources with foundry-compatible photonic platforms is crucial for practical and scalable quantum photonic applications. This study investigates aluminum nitride (AlN) as a material with properties highly suitable for integrated on-chip photonics specifically due to AlN capacity to host defect-center related single-photon emitters. We conduct a comprehen… ▽ More The integration of solid-state single-photon sources with foundry-compatible photonic platforms is crucial for practical and scalable quantum photonic applications. This study investigates aluminum nitride (AlN) as a material with properties highly suitable for integrated on-chip photonics specifically due to AlN capacity to host defect-center related single-photon emitters. We conduct a comprehensive study of the creation and photophysical properties of single-photon emitters in AlN utilizing Zirconium (Zr) and Krypton (Kr) heavy ion implantation and thermal annealing techniques. Guided by theoretical predictions, we assess the potential of Zr ions to create optically addressable spin-defects and employ Kr ions as an alternative approach that targets lattice defects without inducing chemical doping effects. With the 532 nm excitation wavelength, we found that single-photon emitters induced by ion implantation are primarily associated with vacancy-type defects in the AlN lattice for both Zr and Kr ions. The emitter density increases with the ion fluence, and there is an optimal value for the high density of emitters with low AlN background fluorescence. Additionally, under shorter excitation wavelength of 405 nm, Zr-implanted AlN exhibits isolated point-like emitters, which can be related to Zr-based defect complexes. This study provides important insights into the formation and properties of single-photon emitters in aluminum nitride induced by heavy ion implantation, contributing to the advancement of the aluminum nitride platform for on-chip quantum photonic applications. △ Less

Submitted 25 January, 2024; originally announced January 2024.

Comments: The following article has been submitted to APL Quantum. After it is published, it will be found at AIP Publishing/APL Quantum

Photoconductive Effects in Single Crystals of BaZrS$_3$

Authors: Boyang Zhao, Huandong Chen, Ragib Ahsan, Fei Hou, Eric R Hoglund, Shantanu Singh, Huan Zhao, Han Htoon, Andrey Krayev, Maruda Shanmugasundaram, Patrick E Hopkins, Jan Seidel, Rehan Kapadia, Jayakanth Ravichandran

Abstract: Chalcogenide perovskites, such as BaZrS$_3$, are emerging semiconductors with potential for high photovoltaic power conversion efficiency. The role of defects in the efficiency of the generation and collection of photo-excited carriers has not been experimentally investigated extensively. We study the effect of processing-induced defects on the photoconductive properties of single crystals of BaZr… ▽ More Chalcogenide perovskites, such as BaZrS$_3$, are emerging semiconductors with potential for high photovoltaic power conversion efficiency. The role of defects in the efficiency of the generation and collection of photo-excited carriers has not been experimentally investigated extensively. We study the effect of processing-induced defects on the photoconductive properties of single crystals of BaZrS$_3$. We achieved ohmic contacts to single crystals of BaZrS$_3$ and observed positive surface photovoltage, which is typically observed in p-type semiconductors. However, mechanical polishing of BaZrS$_3$ to remove the surface oxide leads to dense deformation grain boundaries and leads to trap-dominated photoconductive response. In comparison, ohmic contacts achieved in cleaved crystals leave fewer deformation defects and greatly improve optoelectronic properties. Defect-controlled crystal growth and contact fabrication are potentially limiting factors for achieving high photon-to-excited electron conversion efficiency in BaZrS$_3$. △ Less

Submitted 4 October, 2023; originally announced October 2023.

The scaling of the microLED and the advantage of 2D materials

Authors: Xuejun Xie, Hamid T. Chorsi, Kunjesh Agashiwala, Hsun-Ming Chang, Jiahao Kang, Jae Hwan Chu, Ibrahim Sarpkaya, Han Htoon, Jon A. Schuller, Kaustav Banerjee

Abstract: The demand for higher resolution displays drives the demand for smaller pixels. Displays show a trend of doubling the pixel number every 4 years and doubling the pixel per inch (PPI) every 6 years. As the prospective candidate for next-generation display technology, microLED (micro Light Emitting Diode) will suffer from sidewall current leakage and poor extraction efficiency as its lateral size re… ▽ More The demand for higher resolution displays drives the demand for smaller pixels. Displays show a trend of doubling the pixel number every 4 years and doubling the pixel per inch (PPI) every 6 years. As the prospective candidate for next-generation display technology, microLED (micro Light Emitting Diode) will suffer from sidewall current leakage and poor extraction efficiency as its lateral size reduces. Using Finite Element Analysis (FEA) method and Finite-Difference Time-Domain (FDTD) method, we find that reducing the thickness of the LED can reduce the current leaking to the sidewalls and reduce the total internal reflection simultaneously. A promising solution to this problem is by using atomically thin 2D materials to make LEDs. However, monolayer inorganic 2D materials that can provide red, green and blue emission are still lacking. Based on the blue light-emitting material fluorographene (CF), partially fluorinated graphene (CFx) is synthesized in this work to emit red and green colors from 683 nm to 555 nm (limited by the instrument). This work also demonstrates lithographically defined regions with different colors, paving the way for the scaling of microLED. △ Less

Submitted 18 January, 2021; originally announced January 2021.

Single Photon Sources with Near Unity Collection Efficiencies by Deterministic Placement of Quantum Dots in Nanoantennas

Authors: Hamza Abudayyeh, Boaz Lubotzky, Anastasia Blake, Jun Wang, Somak Majumder, Zhongjian Hu, Younghee Kim, Han Htoon, Riya Bose, Anton V. Malko, Jennifer A. Hollingsworth, Ronen Rapaport

Abstract: Deterministic coupling between photonic nodes in a quantum network is an essential step towards implementing various quantum technologies. The omnidirectionality of free-standing emitters, however, makes this coupling highly inefficient, in particular if the distant nodes are coupled via low numerical aperture (NA) channels such as optical fibers. This limitation requires placing quantum emitters… ▽ More Deterministic coupling between photonic nodes in a quantum network is an essential step towards implementing various quantum technologies. The omnidirectionality of free-standing emitters, however, makes this coupling highly inefficient, in particular if the distant nodes are coupled via low numerical aperture (NA) channels such as optical fibers. This limitation requires placing quantum emitters in nanoantennas that can direct the photons into the channels with very high efficiency. Moreover, to be able to scale such technologies to a large number of channels, the placing of the emitters should be deterministic. In this work we present a method for directly locating single free-standing quantum emitters with high spatial accuracy at the center of highly directional bullseye metal-dielectric nanoantennas. We further employ non-blinking, high quantum yield colloidal quantum dots (QDs) for on-demand single-photon emission that is uncompromised by instabilities or non-radiative exciton recombination processes. Taken together this approach results in a record-high collection efficiency of 85% of the single photons into a low NA of 0.5, setting the stage for efficient coupling between on-chip, room temperature nanoantenna-emitter devices and a fiber or a remote free-space node without the need for additional optics. △ Less

Submitted 14 February, 2021; v1 submitted 23 May, 2020; originally announced May 2020.

Influence of Morphology on Blinking Mechanisms and Excitonic Fine Structure of Single Colloidal Nanoplatelets

Authors: Zhongjian Hu, Ajay Singh, Serguei V. Goupalov, Jennifer A. Hollingsworth, Han Htoon

Abstract: Colloidal semiconductor nanoplatelets (NPLs) with electronic structure as quantum wells have recently emerged as exciting materials for optoelectronic applications. Here we investigate how morphology affects important photoluminescence (PL) properties of single CdSe and core/shell CdSe/CdZnS nanoplatelets. By analyzing PL intensity-lifetime correlation and second-order photon correlation results,… ▽ More Colloidal semiconductor nanoplatelets (NPLs) with electronic structure as quantum wells have recently emerged as exciting materials for optoelectronic applications. Here we investigate how morphology affects important photoluminescence (PL) properties of single CdSe and core/shell CdSe/CdZnS nanoplatelets. By analyzing PL intensity-lifetime correlation and second-order photon correlation results, we demonstrate that, irrespective of morphology, Auger recombination cannot be responsible for PL blinking of single NPLs. We propose that hot carrier trapping plays a significant role in blinking and find that a rough shell induces additional nonradiative channels presumably related to defects or traps of an imperfect shell. Polarization-resolved PL spectroscopy analysis reveals exciton fine-structure splitting on the order of several tens of meV in rough-shell NPLs at room temperature, which is attributed to exciton localization and substantiated with theoretical calculations taking into account the NPL shape and electron-hole exchange interaction. △ Less

Submitted 21 March, 2018; v1 submitted 8 March, 2018; originally announced March 2018.